Light-emitting display device

Abstract

This invention provides a bottom-emitting display device that maximizes light extraction efficiency by extracting light generated in the light-emitting layer that could be confined and annihilated inside the element due to total internal reflection, and then releasing that light to the outside. [Solution] The light-emitting display device includes a substrate, a plurality of pixels, a first planarization film, a second planarization film, a slit, an anode electrode, a light-emitting layer, and a cathode electrode. The plurality of pixels are arranged on the substrate and comprise light-emitting regions and non-light-emitting regions. The first planarization film is arranged on the substrate. The second planarization film is arranged on the first planarization film over the light-emitting regions. The slit is located in the center of the second planarization film and has a recessed shape below the upper surface of the second planarization film. The anode electrode is located on the upper surface of the second planarization film and on the bottom surface of the slit. The light-emitting layer is located on top of the anode electrode, the first planarization film, and the second planarization film. The cathode electrode is located on the light-emitting layer.

Description

Technical Field

[0001] This specification relates to a light-emitting display device. In particular, this specification relates to a bottom-emitting display device equipped with micromirrors and having improved light extraction efficiency.

Background Art

[0002] Among display devices, light-emitting display devices have the advantages of a wide viewing angle, excellent contrast between light and dark, and a fast response speed, and are attracting attention as next-generation display devices. The light-emitting elements used in light-emitting display devices generally include a light-emitting layer made of an organic or inorganic material between an anode electrode and a cathode electrode.

[0003] In the light-emitting element, holes are supplied from the anode electrode and electrons are supplied from the cathode electrode. Electrons and holes are combined in the light-emitting layer to generate excitons. As the excitons change from the excited state to the ground state, the fluorescent molecules in the light-emitting layer emit light to represent a hue.

[0004] Part of the light emitted from the light-emitting layer of the light-emitting display device may be totally reflected inside the electrode layer with a high refractive index, or may be totally reflected at the interface between the light-emitting layer and the electrode and / or at the interface between the substrate and the air layer, and thus may be extinguished without being emitted to the outside. As a result, a problem may occur in that the light extraction efficiency is reduced.

[0005] To overcome such problems, methods have been developed to form microlenses or microcavity structures inside the element to improve the light extraction efficiency of the light-emitting element. However, these structures improve the light extraction efficiency of the light emitted in the vertical direction of the display device, but cannot extract the light emitted in the horizontal direction into the vertical direction. Therefore, there is a limit to improving the light extraction efficiency by the conventional methods.

Summary of the Invention

Problems to be Solved by the Invention

[0006] The purpose of this application is to overcome the problems of the prior art and to provide a bottom-emitting display device that maximizes light extraction efficiency by extracting light generated in the light-emitting layer that could be confined and annihilated inside the element by total internal reflection, and then releasing it to the outside.

[0007] Another object of this application is to provide a bottom-emitting display device that improves brightness maintenance rate and light extraction efficiency by arranging a micromirror structure at the edge of the light-emitting region and maximizing the area of ​​the light-emitting region. In particular, it is to provide a bottom-emitting display device that improves light extraction efficiency and brightness relative to power consumption by extracting light that could be annihilated by total internal reflection in the central part of the anode electrode to the outside.

[0008] Another object of this application is to provide a light-emitting display device further comprising a recessed slit in the center of the light-emitting region, wherein a micromirror structure is arranged not only at the edge of the light-emitting region but also in the center of the light-emitting region. Thus, a bottom-emitting display device is provided that reduces the amount of light that can be confined inside the light-emitting diode by total internal reflection in the center of the anode electrode, thereby further improving the light extraction efficiency. Furthermore, the anode electrode is extended to the bottom and / or inclined portion of the slit, maximizing the area of ​​the light-emitting region, improving the light extraction efficiency, and improving the brightness relative to power consumption. [Means for solving the problem]

[0009] To achieve the aforementioned objective, the light-emitting device according to this application includes a substrate, a plurality of pixels, a first planarization film, a second planarization film, a slit, an anode electrode, a light-emitting layer, and a cathode electrode. The plurality of pixels are arranged on the substrate, and each pixel comprises a light-emitting region and a non-light-emitting region. The first planarization film is arranged on the substrate. The second planarization film is arranged on the first planarization film over the light-emitting region. The slit is located in the center of the second planarization film and has a recessed shape below the upper surface of the second planarization film. The anode electrode is arranged on the upper surface of the second planarization film and on the bottom surface of the slit. The light-emitting layer is arranged on the anode electrode, the first planarization film, and the second planarization film. The cathode electrode is arranged on the light-emitting layer.

[0010] The light-emitting device described in this application has a structure in which almost all of the light emitted from the light-emitting layer is confined inside the element and extracted to the outside without being extinguished, thereby providing a bottom-emitting type display device that maximizes light emission efficiency.

[0011] The light-emitting display device according to this application can provide a bottom-emitting type display device that minimizes the non-light-emitting area and improves light extraction efficiency by arranging micromirrors (or reflective parts) without using a bank that covers the pixel electrode frame.

[0012] The light-emitting display device according to this application can extract light that may disappear within the anode electrode (or light-emitting diode) to the outside by a micromirror structure formed on the edge of the anode electrode. In particular, the device has a structure that divides the anode electrode with a slit so that light that may disappear within the anode electrode (or light-emitting diode) in the central part of the pixel can also be extracted to the outside, further improving the light extraction efficiency.

[0013] Furthermore, the light-emitting display device according to this application can improve the area ratio of the anode electrode within the pixel by extending the anode electrode to the bottom surface and / or inclined surface of the slit, thereby improving the light-emitting area ratio. Therefore, the light-emitting display device according to this application can provide higher brightness with the same power consumption, or use lower power consumption to provide the same brightness, thus enabling low-power operation.

[0014] The effects obtained by this application are not limited to those mentioned above, and other effects not mentioned can be clearly understood by a person with ordinary skill in the art to which this specification pertains, from the following description. [Brief explanation of the drawing]

[0015] [Figure 1] This figure shows a schematic configuration of the light-emitting display device according to this application. [Figure 2]This figure shows the circuit configuration of a single pixel constituting the light-emitting display device according to this application. [Figure 3] This is a plan view showing an array structure of pixels arranged in a single unit pixel, according to an example of this application. [Figure 4] This is an enlarged cross-sectional view showing the structure of an example light-emitting device according to this application, cut along line I-I' in Figure 3. [Figure 5] This is a cross-sectional enlarged view showing the light extraction path in an example of a light-emitting device according to this application, cut along line II-II' in Figure 3. [Figure 6] This is an enlarged cross-sectional view showing the structure of the light-emitting device according to the first embodiment of this application, cut along line II-II' in Figure 3. [Figure 7] This is a plan view enlarged showing the structure of a light-emitting device according to the second embodiment of this application. [Figure 8] This is an enlarged cross-sectional view showing the structure of a light-emitting device according to the second embodiment of this application, cut along line III-III' in Figure 7. [Figure 9] This is an enlarged cross-sectional view showing the structure of a light-emitting device according to the third embodiment of this application, cut along line III-III' in Figure 7. [Figure 10] This is a plan view enlarged showing the structure of a light-emitting device according to the fourth embodiment of this application. [Figure 11] This is an enlarged cross-sectional view showing the structure of a light-emitting device according to the fourth embodiment of this application, cut along line IV-IV' in Figure 10. [Figure 12] This is a plan view enlarged showing the structure of a light-emitting device according to the fifth embodiment of this application. [Figure 13] This is an enlarged cross-sectional view showing the structure of a light-emitting device according to the fifth embodiment of this application, cut along line V-V' in Figure 12. [Modes for carrying out the invention]

[0016] The advantages and features of this application, and the ways to achieve them, will become clear by referring to an example described in detail below together with the attached drawings. However, this application is not limited to the example disclosed below, but is embodied in various different forms, and simply an example of this application is provided to complete the disclosure of this application and to fully inform those with ordinary knowledge in the technical field to which this application belongs of the scope of the invention, and the invention of this application is only defined by the claims.

[0017] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining an example of this application are exemplary, and thus are not limited to the matters shown here. Throughout the specification, the same reference numerals refer to the same components. In addition, when explaining an example of this application, if it is judged that a specific description of related known technologies may unnecessarily obscure the gist of the application, the detailed description thereof will be omitted.

[0018] Exemplary embodiments of this application will be described in detail with reference to the attached drawings. The same reference numerals are used throughout the drawings to refer to the same or similar components. Similar reference signs that have already been used to indicate the same components in other drawings in the specification of this application are used for one component as much as possible. In the following description, when functions and configurations known to those with ordinary knowledge in the technical field to which this application belongs are irrelevant to the essential configuration of this application, the detailed description thereof can be omitted. The terms described in the specification of this application must be understood as follows.

[0019] When terms such as "comprising", "having", "consisting of", etc. mentioned in the specification of this application are used, other parts can be added unless "only" is used. When a component is expressed in the singular, it includes the case of including a plurality unless there is a special explicit description.

[0020] When interpreting a component, it is interpreted as including an error range even without a separate explicit description.

[0021] When describing the positional relationship between two parts, for example, using phrases like "on top," "above," "below," or "next to," one or more other parts may be located between the two parts, unless "immediately" or "directly" is used.

[0022] When describing temporal relationships, for example, when a temporal sequence is described using phrases like "after," "following," "next," or "before," it can include cases that are not continuous unless "immediately" or "directly" is used.

[0023] While terms such as "first," "second," etc., are used to describe various components, these components are not limited by these terms. These terms are simply used to distinguish one component from others. Therefore, the first component referred to below may also be the second component within the technical concept of this application.

[0024] In describing the components of this application, terms such as 1st, 2nd, A, B, (a), (b), etc., may be used. Such terms are for the sole purpose of distinguishing a component from other components, and do not limit the nature, order, sequence, or number of the component in question. Where it is stated that a component "connects," "joins," or "connects" another component, it should be understood that the component may be directly connected or connected to the other component, but other components may also be "interposed" between each component that can be indirectly connected or connected without any special explicit description.

[0025] The term “connected” as used in this application is intended to have the broadest possible meaning. Specifically, the phrase “A is connected to B” includes both direct connection (where no intermediate connecting component or member exists) and indirect connection (where one or more intermediate components or members exist between A and B). That is, “A is in contact with B” includes both direct physical or electrical coupling and indirect coupling via one or more intermediate components. Unless otherwise explicitly stated, the term “connected” does not require direct physical or electrical contact. The terms “connected” and “in contact” are interpreted in the same manner.

[0026] The term "at least one" must be understood to include all possible combinations of one or more related items. For example, "at least one of item 1, item 2, and item 3" can mean not just each of item 1, item 2, or item 3 individually, but all possible combinations of items that can be presented from two or more of items 1, item 2, and item 3.

[0027] The features of some of the examples in this application can be combined or linked together in part or as a whole, allowing for various technical interdependencies and drives, and each example may be implementable independently of others, or they may be implemented together in relation to each other.

[0028] In the following, an example of a light-emitting display device according to this application will be described in detail with reference to the attached figures. In assigning reference numerals to the components in each figure, identical components may have the same reference numeral whenever possible, even if they are shown in different figures.

[0029] The present application will be described in detail below with reference to the attached figures. Figure 1 is a diagram showing the schematic configuration of the light-emitting display device according to this application. In Figure 1, the X-axis indicates the direction parallel to the scan wiring, the Y-axis indicates the direction parallel to the data wiring, and the Z-axis indicates the thickness direction of the display device.

[0030] Referring to Figure 1, the light-emitting display device according to this application includes a substrate 110, a gate (or scan) drive unit 200, a pad unit 300, a source drive integrated circuit 410, a flexible wiring film 430, a circuit board 450, and a timing control unit 500.

[0031] The substrate 110 may include an insulating material or a flexible material. The substrate 110 may be made of glass, metal, or plastic, but is not limited to these. If the light-emitting display device is a flexible display device, the substrate 110 may also be made of a flexible material such as plastic. For example, it may include a transparent polyimide material.

[0032] The circuit board 110 can be divided into a display area (AA) and a non-display area (NDA). The display area (AA) is the area where the image is displayed and can be defined as the majority of the circuit board 110, including the central part, but is not limited to this. Scan wiring (or gate wiring), data wiring, and unit pixels (UP) are arranged in the display area (AA). The unit pixels (UP) are arranged in a matrix manner. One unit pixel (UP) contains multiple pixels (P), and each of the multiple pixels (P) contains scan wiring and data wiring. Each pixel (P) contains an emitting area and a non-emitting area.

[0033] The non-display area (NDA) is an area where no image is displayed, and can be defined on the edge of the substrate 110 so as to surround all or part of the display area (AA). The gate drive unit 200 and the pad unit 300 can be formed in the non-display area (NDA).

[0034] The gate drive unit 200 supplies scan (or gate) signals to the scan wiring based on gate control signals input from the timing control unit 500. The gate drive unit 200 can be formed in the non-display area (NDA) on one side of the display area (AA) of the base substrate 110 using the GIP (gate driver in panel) method. The GIP method refers to a structure in which the gate drive unit 200 is directly formed on the substrate 110.

[0035] The pad section 300 supplies data signals to the data wiring based on data control signals input from the timing control unit 500. The pad section 300 is manufactured using a drive chip, mounted on a flexible wiring film 430, and can be attached to the non-display area (NDA) on one side of the display area (AA) of the substrate 110 using the TAB (tape automated bonding) method.

[0036] The source-driven integrated circuit 410 receives digital video data and source control signals from the timing control unit 500. The source-driven integrated circuit 410 converts the digital video data into analog data voltages according to the source control signals and supplies them to the data wiring. If the source-driven integrated circuit 410 is manufactured as a chip, it can be mounted on the flexible wiring film 430 using the COF (chip-on-film) or COP (chip-on-plastic) method.

[0037] The flexible wiring film 430 can have wiring formed on it that connects the pad portion 300 to the source drive integrated circuit 410, and wiring that connects the pad portion 300 to the circuit board 450. The flexible wiring film 430 is attached to the pad portion 300 using an anisotropic conducting film, thereby connecting the wiring on the pad portion 300 and the flexible wiring film 430.

[0038] The circuit board 450 can be attached to the flexible wiring film 430. The circuit board 450 can mount multiple circuits embodied as drive chips. For example, a timing control unit 500 can be mounted on the circuit board 450. The circuit board 450 may be a printed circuit board or a flexible printed circuit board.

[0039] The timing control unit 500 receives digital video data and timing signals from an external system board via cables on the circuit board 450. Based on the timing signals, the timing control unit 500 generates gate control signals to control the operating timing of the gate drive unit 200 and source control signals to control the source drive integrated circuit 410. The timing control unit 500 supplies the gate control signals to the gate drive unit 200 and the source control signals to the source drive integrated circuit 410. Depending on the product, the timing control unit 500 can also be formed with the source drive integrated circuit 410 and a single drive chip and mounted on the board 110.

[0040] The structure of an example of a light-emitting display device according to this application will be described below with reference to Figures 2 to 4. Figure 2 is a diagram showing the circuit configuration of a single pixel constituting the light-emitting display device according to this application. Figure 3 is a plan view showing the structure of a pixel array arranged in a single unit pixel according to an example of this application. Figure 4 is an enlarged cross-sectional view showing the structure of an example of a light-emitting display device according to this application, cut along line I-I' in Figure 3.

[0041] Referring to Figures 2 to 4, the light-emitting device according to this application includes a plurality of unit pixels (UP). A unit pixel (UP) can include three or four pixels (P). For example, one unit pixel (UP) can include a red pixel (RP), a green pixel (GP), and a blue pixel (BP). As another example, as shown in Figure 3, one unit pixel (UP) can include a red pixel (RP), a white pixel (WP), a green pixel (GP), and a blue pixel (BP).

[0042] Each pixel (P) of a light-emitting device, namely one of a red pixel (RP), white pixel (WP), green pixel (GP), and blue pixel (BP), is defined by scan wiring (SL), data wiring (DL), and drive current wiring (VDD). Inside each pixel of the light-emitting device are a switching thin-film transistor (ST), a drive thin-film transistor (DT), a light-emitting diode (OLE), and an auxiliary capacitor (Cst). A high potential voltage is applied to the drive current wiring (VDD) to drive the light-emitting diode (OLE).

[0043] In the following explanation, referring to Figure 3, a pixel (P) is described as having a structure in which data wiring (DL) is located on the left side and drive current wiring (VDD) is located on the right side. However, the structure of a pixel (P) is not limited to this and can have various configurations. As an example, four pixels (P) can be used as a unit, with drive current wiring (VDD) located on the left and right sides of one unit pixel (UP), and a reference wiring (not shown) can be placed between the white pixel (WP) and the green pixel (GP). In addition, data wiring (DL) can be located on the left side of each pixel (P).

[0044] A switching thin-film transistor (ST) can be placed at the intersection of scan paths (SL) and data paths (DL). The switching thin-film transistor (ST) includes a gate electrode (SG), a semiconductor layer (SA), a source electrode (SS), and a drain electrode (SD). The gate electrode (SG) is connected to the scan path (SL). The source electrode (SS) is connected to the data path (DL), and the drain electrode (SD) is connected to the drive thin-film transistor (DT). The semiconductor layer (SA) is placed on the gate insulating film (GI) so as to overlap the gate electrode (SG). The portion of the semiconductor layer (SA) that overlaps the gate electrode (SG) is defined as the channel region.

[0045] An intermediate insulating film (IL) is stacked on a semiconductor layer (SA). A source electrode (SS) and a drain electrode (SD) are formed on the intermediate insulating film (IL). The source electrode (SS) is connected to one side of the semiconductor layer (SA) via a contact hole formed in the intermediate insulating film (IL). The drain electrode (SD) is connected to the other side of the semiconductor layer (SA) via another contact hole formed in the intermediate insulating film (IL). A switching thin-film transistor (ST) has the function of selecting which pixel to drive by applying a data signal to a driving thin-film transistor (DT).

[0046] A driving thin-film transistor (DT) functions to drive the light-emitting diode (OLE) of a pixel selected by a switching thin-film transistor (ST). The driving thin-film transistor (DT) includes a gate electrode (DG), a semiconductor layer (DA), a source electrode (DS), and a drain electrode (DD). The gate electrode (DG) of the driving thin-film transistor (DT) is connected to the drain electrode (SD) of the switching thin-film transistor (ST). For example, the drain electrode (SD) of the switching thin-film transistor (ST) is connected via a drain contact hole (DH) that penetrates the gate insulating film (GI) covering the gate electrode (DG) of the driving thin-film transistor (DT). The drain electrode (DD) is connected to the drive current wiring (VDD), and the source electrode (DS) is connected to the anode electrode (ANO) of the light-emitting diode (OLE). An auxiliary capacitor (Cst) is placed between the gate electrode (DG) of the driving thin-film transistor (DT) and the anode electrode (ANO) of the light-emitting diode (OLE).

[0047] An interlayer film (IL) is stacked on a semiconductor layer (DA). A source electrode (DS) and a drain electrode (DD) are formed on the interlayer film (IL). The source electrode (DS) is connected to one side of the semiconductor layer (DA) via a contact hole formed in the interlayer film (IL). The drain electrode (DD) is connected to the other side of the semiconductor layer (DA) via another contact hole formed in the interlayer film (IL).

[0048] The drive thin-film transistor (DT) is placed between the drive current wiring (VDD) and the light-emitting diode (OLE). The drive thin-film transistor (DT) adjusts the amount of current flowing from the drive current wiring (VDD) to the light-emitting diode (OLE) according to the magnitude of the voltage of the gate electrode (DG) connected to the drain electrode (SD) of the switching thin-film transistor (ST).

[0049] A light-emitting diode (OLE) includes an anode electrode (ANO), an emissive layer (EL), and a cathode electrode (CAT). The OLE emits light in response to a current regulated by a driving thin-film transistor (DT). To reiterate, the amount of light emitted by the OLE is adjusted by the current regulated by the driving thin-film transistor (DT), thus allowing for the adjustment of the brightness of a light-emitting display device. The anode electrode (ANO) of the OLE is connected to the source electrode (DS) of the driving thin-film transistor (DT), and the cathode electrode (CAT) is connected to a low-voltage wiring (VSS) supplied with a low-voltage voltage. In other words, the OLE is driven by a low-voltage voltage and a high-voltage voltage regulated by the driving thin-film transistor (DT).

[0050] A protective film (PAS) is laminated on the surface of a substrate 110 on which thin-film transistors (ST, DT) are formed. The protective film (PAS) is preferably formed from an inorganic film such as silicon oxide (SiOx) or silicon nitride (SiNx). The thin films that constitute the thin-film transistors (ST, DT) laminated on the substrate 110 can be called the driving element layer. As an example, the driving element layer can be defined as the layer from the metal layer on which scan wiring (SL) and gate electrodes (SG, DG) are formed to the protective film (PAS) covering the thin-film transistors (ST, DT).

[0051] A color filter (CF) is formed on the protective layer (PAS) (see Figure 5). One color filter (CF) is placed for each pixel. For example, a red color filter (CFR) may be placed for red pixels (RP), a green filter for green pixels (GP), and a blue color filter for blue pixels (BP). However, a color filter may not be placed for white pixels (WP).

[0052] In Figure 4, the color filter (CFR) is shown as being positioned to extend from the light-emitting region to the non-light-emitting region. However, it is not limited to this configuration; the color filter (CF) can also be positioned to correspond only to the light-emitting region.

[0053] A planarization film (PL) is stacked on the color filter (CF). The planarization film (PL) is a thin film used to planarize the surface of the substrate 110 on which thin-film transistors (ST, DT) are formed, as the surface is not uniform. To make the height differences uniform, the planarization film (PL) can be formed from an organic material.

[0054] The protective film (PAS), color filter (CF), and planarization film (PL) have pixel contact holes (PH) that expose a portion of the source electrode (DS) of the driving thin-film transistor (DT). An anode electrode (ANO) is formed on the upper part of the planarization film (PL). The anode electrode (ANO) is connected to the source electrode (DS) of the driving thin-film transistor (DT) via the pixel contact holes (PH).

[0055] The planarization film (PL) can have steps. For example, the planarization film (PL) can be patterned using the anode electrode (ANO) as a mask, resulting in a structure where the planarization film (PL) protrudes upward, and the anode electrode (ANO) is formed on the protruding planarization film (PL). Figure 4 shows a structure in which the protruding portion (R) of the planarization film (PL) is formed to cover the pixel contact hole (PH). However, it is not limited to this, and the protruding portion (R) of the planarization film (PL) can also have a structure in which it does not cover the pixel contact hole (PH). In this case, the area around the pixel contact hole (PH) can be included in the non-emitting region.

[0056] The anode electrode (ANO) can vary in composition depending on the light-emitting structure of the light-emitting diode (OLE). For example, in the case of a bottom-emitting type that provides light towards the substrate 110, it can be formed from a transparent conductive material. In the case of a type that emits light in the upper direction opposite to the substrate 110, it can be formed from a metallic material with excellent light reflectivity. In this case, it can have a structure in which a transparent conductive layer and a metal layer are laminated.

[0057] In the case of bottom-emitting type systems, the anode electrode (ANO) consists of a transparent conductive material (TCO) or a semi-transmissive conductive material. For example, the anode electrode (ANO) can be made of a transparent conductive material such as indium-tin oxide (ITO), indium-zinc oxide (IZO), or indium-zinc-tin oxide (IZTO). Alternatively, the anode electrode (ANO) can be formed as a semi-transmissive layer of magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag) with a thickness of less than 100 nm. Such an anode electrode (ANO) can be referred to as the first electrode or transparent electrode.

[0058] A light-emitting layer (EL) is laminated on the anode electrode (ANO). The light-emitting layer (EL) is arranged in the form of a thin film layer continuously connected on the entire surface of the substrate 110. The light-emitting layer (EL) can have a structure in which multiple functional layers are laminated. For example, it can comprise a hole functional layer, an organic light-emitting layer, and an electronic functional layer. Furthermore, the hole functional layer and the electronic functional layer can have a structure in which they are continuously connected over the entire area of ​​the substrate 110. The organic light-emitting layer can also have a structure in which it is continuously connected over the entire area of ​​the substrate 110 between the hole functional layer and the electronic functional layer. However, it is not limited to this, and the organic light-emitting layer can be divided and arranged corresponding to the light-emitting region of each pixel (P).

[0059] Furthermore, the light-emitting layer (EL) may include two or more light-emitting sections to emit white light. For example, the light-emitting layer (EL) may have a tandem structure including a first light-emitting layer and a second light-emitting layer stacked vertically to emit white light by mixing a first light and a second light. However, it is not limited to this, and the vertically stacked light-emitting section may consist of three or four light-emitting layers.

[0060] A cathode electrode (CAT) is stacked on the light-emitting layer (EL). The cathode electrode (CAT) is also arranged in the form of a thin film layer that is continuously connected on the entire surface of the substrate 110. The stacked structure of the anode electrode (ANO), light-emitting layer (EL), and cathode electrode (CAT) forms a light-emitting diode (OLE).

[0061] The cathode electrode (CAT) is preferably formed from a metallic material with excellent light reflectivity. For example, the cathode electrode (CAT) can be formed from a metallic material with excellent light reflectivity to a thickness of at least 2000 Å to 3000 Å (or 200 nm to 300 nm). Here, the metallic material with excellent light reflectivity may be at least one of the following metals: aluminum (Al), magnesium (Mg), calcium (Ca), silver (Ag), or alloys or combinations thereof (e.g., aluminum-magnesium alloy (AlMg)). As another example, the cathode electrode (CAT) can be formed from a thin film layer with high reflectivity, such as a laminated structure of aluminum (Al) and titanium (Ti) (Ti / Al / Ti), a laminated structure of aluminum (Al) and ITO (ITO / Al / ITO), a silver (Ag) alloy, and a laminated structure of silver (Ag) alloy and ITO (ITO / Ag alloy / ITO). Silver (Ag) alloys can be alloys of silver (Ag), palladium (Pd), and copper (Cu), among others. Such cathode electrodes (CATs) can be referred to as second electrodes, reflecting electrodes, or counter electrodes.

[0062] An anode electrode (ANO), an emissive layer (EL), and a cathode electrode (CAT) are stacked to form a light-emitting diode (OLE). The light-emitting display device according to this application has a structure in which one light-emitting diode (OLE) is arranged on a planarization film (PL) that is patterned in an island-like protruding shape within each pixel (P). The layer from the planarization film (PL) stacked on the driving element layer to the cathode electrode (CAT) of the light-emitting diode (OLE) can be named the light-emitting element layer. The driving element layer can be placed below a color filter (CF).

[0063] More specifically, within each pixel (P), a planarization film (PL) is coated onto the entire surface of the substrate 110, and has island-like protrusions of a certain thickness. An anode electrode (ANO) is formed on the upper surface of the protruding portion of the planarization film (PL). The light-emitting layer (EL) is laminated, covering the upper surface of the planarization film (PL) which has a step, and the upper surface of the anode electrode (ANO). The cathode electrode (CAT) is also laminated with the same profile as the light-emitting layer (EL). As a result, the cathode electrode (CAT) has a downward-concave "∩" shape. Since the cathode electrode (CAT) is made of a metallic material with excellent light reflectivity, it has a structure in which concave micromirrors are formed around the protruding portion of the planarization film (PL).

[0064] In the case of bottom-emitting type displays, a disadvantage may be that the area ratio of the aperture region to the pixel region is small due to the thin-film transistors (ST, DT), auxiliary capacitors (Cst), and wiring (SL, DL, VDD). The light-emitting display device according to this application provides a structure equipped with micromirrors so that even if the proportion occupied by the aperture region is small, the light generated in the light-emitting layer can be provided without loss towards the substrate 110 located below.

[0065] The mechanism by which micromirrors improve light emission efficiency will be explained below with reference to Figure 5. Figure 5 is a magnified cross-sectional view showing the light extraction path in an example of a light-emitting device according to this application, cut along line II-II' in Figure 3.

[0066] Refer to Figure 5, and the optical path for light emitted from the luminescent layer (EL) in the edge region of the anode electrode (ANO). This explains TIFF2026116686000002.tif4170. Light generated in the light-emitting layer (EL) is transmitted as a spherical wave. Light is emitted in all 360 degrees on the cross-sectional view. Of this, the light emitted at the top is reflected by the cathode electrode (CAT) and travels back to the bottom. In other words, the light generated in the light-emitting layer (EL) is radiated in the downward 180-degree direction. This light is incident on the anode electrode (ANO). Since the anode electrode (ANO) is made of a transparent conductive material, 60-70% of the light passes through the anode electrode (ANO) and through the color filter (CF) located at the bottom and is emitted to the outside of the substrate 110.

[0067] On the other hand, the anode electrode (ANO) is a transparent conductive material with a refractive index of approximately 2.0 to 2.3. The luminescent layer (EL) is in contact with the upper part of the anode electrode (ANO), and the planarization film (PL) is in contact with the lower part. The luminescent layer (EL) and the planarization film (PL) can have refractive indices of approximately 1.3 to 1.5. As a result, a structure is formed in which the anode electrode (ANO) with a high refractive index is interposed between the low refractive index layers. Therefore, of the light incident on the anode electrode (ANO), approximately 30 to 40% of the light corresponding to the total internal reflection condition propagates horizontally (in the X-axis direction) inside the anode electrode (ANO).

[0068] Furthermore, depending on the material of the light-emitting layer (EL), the refractive index of the EL may be the same as, or very similar to, the refractive index of the anode electrode (ANO). In this case, the light emitted from the EL that undergoes total internal reflection at the interface between the anode electrode (ANO) and the planarization film (PL) can be confined between the cathode electrode (CAT) and the planarization film (PL) and propagate horizontally (in the X-axis direction).

[0069] Light confined within the anode electrode (ANO) or between the cathode electrode (CAT) and the planarization film (PL) and propagating horizontally is emitted from the edge of the anode electrode (ANO), reflected by the opposing cathode electrode (CAT) which has a micromirror structure, and emitted downwards. In the absence of the micromirror structure formed by the protrusions of the planarization film (PL), light that would otherwise be emitted horizontally and annihilated is extracted downwards by the micromirrors, thereby improving the light extraction efficiency.

[0070] Here, we explained that light propagating horizontally propagates by repeatedly undergoing total internal reflection within the anode electrode (ANO). However, it is not limited to this; light can also propagate by repeatedly undergoing total internal reflection within a stacked structure of an anode electrode (ANO) and an emissive layer (EL), that is, between the cathode electrode (CAT) and the planarization film (PL). For convenience, in the following explanation, we will describe the light propagating horizontally after undergoing total internal reflection within a light-emitting diode (OLE).

[0071] Here, in order for the light reflected by the cathode electrode (CAT) having a micromirror structure to be emitted in the downward front direction, it is necessary to adjust the inclination angle of the cathode electrode (CAT) that is laminated on the etched side surface where the step of the planarization film (PL) is formed. As an example, it is preferable that the inclination angle (θ) that the inclined surface of the cathode electrode (CAT) makes with the horizontal plane of the substrate 110 is one value in the range of 50 to 80 degrees. Since the cathode electrode (CAT) is laminated along the step shape of the planarization film (PL), the inclination angle (θ) of the cathode electrode (CAT) may be substantially the same as the side wall inclination angle (θ') due to the protrusion (R) in the planarization film (PL). Therefore, it is preferable to form the inclination angle (θ') made by the flat portion (H) and the protrusion (R) of the planarization film (PL) to be between 50 and 80 degrees.

[0072] The light-emitting device according to this application has a planarized film (PL) shape with island-like projections (R) on a flat portion (H), and comprises a cathode electrode (CAT) having a micromirror structure. Therefore, by extracting the light generated in the light-emitting layer (EL) that can be extinguished inside the light-emitting diode (OLE), the light extraction efficiency can be improved.

[0073] For the sake of explanation, when considering a single pixel as the reference, the planarization film (PL) was described as having a structure in which protrusions (R) are formed on flat areas (H). However, when considering a structure in which multiple pixels are arranged in a matrix, the planarization film (PL) can also be described as having a structure in which protrusions (R) and recesses are repeatedly arranged. That is, the flat areas (H) can be named recesses. In this case, the protrusions can correspond to the light-emitting regions within the pixel, and the recesses can correspond to the non-light-emitting regions surrounding the light-emitting regions.

[0074] The light-emitting display device having the micromirror structure described above can extract light that could be confined and annihilated within the anode electrode (ANO) to the outside of the anode electrode (ANO). However, light emitted from the light-emitting layer (EL) in the central region of the anode electrode (ANO) may not be able to be extracted to the outside.

[0075] The following shows the optical path for light emitted from the light-emitting layer (EL) in the central region of a light-emitting diode (OLE) on a plan view. This explains TIFF2026116686000003.tif4170. The light generated in the light-emitting layer (EL) is radiated downwards in a 180-degree direction by the same mechanism as described above. Since the anode electrode (ANO) is made of a transparent conductive material, 60-70% of the light passes through the anode electrode (ANO) and through the color filter (CF) located at the bottom, and is emitted to the outside of the substrate 110.

[0076] However, about 30-40% of the light incident on the anode electrode (ANO) that satisfies the total internal reflection condition propagates horizontally (in the X-axis direction) within the anode electrode (ANO) (or within the light-emitting diode (OLE)). In particular, light generated in the central region of the pixel undergoes repeated total internal reflection processes within the anode electrode (ANO) as it propagates. The length of TIFF2026116686000004.tif4170 is the optical path mentioned above. The length can be considerably longer than TIFF2026116686000005.tif4170. Therefore, it can be lost as thermal energy inside the anode electrode (ANO) before it can pass through the end of the ANO and emit light. Generally, if it propagates for a length of 20 μm or more inside the anode electrode (ANO), it can be lost.

[0077] The following describes various embodiments of the light-emitting device according to this application, in which light emitted from the light-emitting layer (EL) in the central region of the light-emitting diode (OLE) can be extracted to the outside before it disappears.

[0078] In the following explanation, a detailed description of the common component, the drive element layer, will be omitted. Furthermore, the configuration of the drive element layer is not limited to the structures described in Figures 2 to 4. Thin-film transistors (ST, DT) can have top-gate, bottom-gate, and dual-gate structures. Thin-film transistors (ST, DT) can also be made of oxide semiconductor materials. For example, the material constituting the semiconductor layer (SA, DA) may include metal oxides such as indium-gallium-zinc-oxide (IGZO). However, it is not limited to this; the material constituting the semiconductor layer (SA, DA) can be amorphous silicon (a-Si), polycrystalline silicon (Poly Si), or low-temperature polycrystalline silicon (Low Temperature Poly Silicon: LTPS).

[0079] Furthermore, the arrangement structure of the signal lines—scan lines (SL), data lines (DL), and drive current lines (VDD)—can be varied in various ways. Additionally, other signal lines, such as reference lines, can be included. Reference numerals shown in the diagrams below, but not explicitly described, refer to the same explanations as those in Figures 2-4. [Examples]

[0080] The structure of the light-emitting device according to the first embodiment of this application will be described below with reference to Figure 6. Figure 6 is an enlarged cross-sectional view showing the structure of the light-emitting device according to the first embodiment of this application, cut along line III-III' of Figure 3.

[0081] Referring to Figure 6, a gate insulating film (GI), an intermediate insulating film (IL), and a protective film (PAS) are sequentially laminated on the substrate 110. A color filter (CF) is laminated on the protective film (PAS). A planarization film (PL) is laminated on the color filter (CF). The planarization film (PL) consists of a first planarization film (PL1) and a second planarization film (PL2) which are sequentially laminated. The first planarization film (PL1) has a constant thickness and is coated on the entire surface of the substrate 110 on the color filter (CF). The second planarization film (PL2) is formed in an island shape only at positions corresponding to the light-emitting region where the anode electrode (ANO) is placed within the pixel (P). That is, the second planarization film (PL2) has a shape that protrudes in an island shape from above the first planarization film (PL1).

[0082] Here, the light-emitting region refers to the region where the anode electrode (ANO) is located. That is, the region in which the anode electrode (ANO), light-emitting layer (EL), and cathode electrode (CAT) are stacked to form a light-emitting diode (OLE) is the light-emitting region. In this specification, a feature is that light is provided by reflection from the cathode electrode (CAT) formed corresponding to the sidewall of the second planarization layer (PL2). Therefore, the region in which the second planarization layer (PL2), which is the region in which the micromirror structure is formed, is formed can be included in the light-emitting region. The region surrounding the light-emitting region can be defined as a non-light-emitting region. That is, the region in which the second planarization layer (PL2) is absent and only the first planarization layer (PL1) exists can be defined as a non-light-emitting region.

[0083] Here, the sidewall inclination angle (θ') of the second planarization film (PL2), which is formed to protrude from above the first planarization film (PL1), may be the same as the sidewall inclination angle (θ') described in Figure 5. Similarly, the inclination surface angle (θ) of the cathode electrode (CAT) laminated on the first planarization film (PL1) and the second planarization film (PL2) may be substantially the same as the sidewall inclination angle (θ') of the second planarization film (PL2) described in Figure 5.

[0084] The first embodiment is characterized by using a transparent organic material with a refractive index equal to or up to approximately 0.2 lower than that of the anode electrode (ANO) for the second planarization film (PL2) that comes into contact with the anode electrode (ANO), in order to minimize the amount of light lost due to total internal reflection inside the light-emitting diode (OLE).

[0085] For example, the anode electrode (ANO) can have a refractive index of 2.0 to 2.3. The second planarization film (PL2) can have a refractive index of 1.8 to 2.0, which is the same as or about 0.2 lower than that of the anode electrode (ANO). On the other hand, the first planarization film (PL1) can have a refractive index of 1.3 to 1.5, which is 0.5 or more lower than that of the second planarization film (PL2).

[0086] In this case, the light emitted from the light-emitting layer (EL) follows the optical path shown in Figure 6. Light is emitted in the same manner as in TIFF2026116686000006.tif4170. The light generated in the light-emitting layer (EL) is radiated in the downward 180-degree direction by the same mechanism as described above. Since the anode electrode (ANO) is made of a transparent conductive material and the second planarization film (PL2) has a refractive index similar to that of the anode electrode (ANO), 90-98% of the light is transmitted through the anode electrode (ANO) and the second planarization film (PL2). The light that has been transmitted through the second planarization film (PL2) is incident on the first planarization film (PL1). Since the first planarization film (PL1) has a refractive index of 1.4-1.5, 60-70% of the light incident on the first planarization film (PL1) is transmitted through the first planarization film (PL1), passes through the color filter (CF) located at the bottom, and is emitted to the outside of the substrate 110.

[0087] However, of the light passing through the second planarization layer (PL2), approximately 30-40% of the light that satisfies the total internal reflection condition at the interface with the first planarization layer (PL1) is re-incident to the anode electrode (ANO) and either undergoes total internal reflection at the upper surface of the anode electrode (ANO) or is reflected again at the cathode electrode (CAT).

[0088] That is, the optical path in Figure 6 According to TIFF2026116686000007.tif4170, the optical path in Figure 5 TIFF2026116686000008.tif4170 and Unlike TIFF2026116686000009.tif4170, the second planarization layer (PL2), which has a thickness of approximately 1 to 1.5 μm, expands the space in which light emitted from the light-emitting layer (EL) undergoes total internal reflection, and significantly reduces the number of times total internal reflection occurs. As a result, most of the light emitted in the central region of the pixel and totally reflected is not confined inside the light-emitting diode (OLE), but passes through the interface between the light-emitting diode (OLE) and the second planarization layer (PL2). Of the majority of the light that passes through the second planarization layer (PL2), the light totally reflected at the upper surface of the first planarization layer (PL1) can be reflected by the cathode electrode (CAT) with a micromirror structure and emitted downwards.

[0089] The light-emitting device according to the first embodiment can further improve the light extraction efficiency compared to the structure shown in Figure 5 by extracting most of the light generated in the light-emitting layer (EL) using a second planarization film (PL2) that protrudes in an island-like manner and a cathode electrode (CAT) having a micromirror structure made of the second planarization film (PL2). In particular, since the second planarization film (PL2) has the same or slightly smaller refractive index as the anode electrode (ANO), the amount of light that can be trapped and lost inside the light-emitting diode (OLE) can be minimized, thereby improving the light extraction efficiency. [Examples]

[0090] The structure of the light-emitting device according to the second embodiment of this application will be described below with reference to Figures 7 and 8. Figure 7 is an enlarged plan view showing the structure of the light-emitting device according to the second embodiment of this application. Figure 8 is an enlarged cross-sectional view showing the structure of the light-emitting device according to the second embodiment of this application, cut along line III-III' in Figure 7.

[0091] Referring to Figure 7, in the second embodiment of this application, a rectangular slit (SLT) is formed in the center (or central region) of the anode electrode (ANO) of the red pixel (RP), with the length being longer in the vertical direction (Y-axis direction) and the width being narrower in the horizontal direction (X-axis direction). In Figure 7, one of the slits (SLT) is positioned in the center of the anode electrode (ANO), dividing the anode electrode (ANO) into left and right sides. However, this is not the only way in which the slits (SLT) can be positioned. Although Figure 7 describes the case where the slit (SLT) is shown in the red pixel (RP), the same method can be used to position the slits (SLT) in the other pixels, namely the green pixel (GP), blue pixel (BP), and white pixel (WP).

[0092] As another example, multiple slits (SLTs) (for example, 2 to 5) can be arranged parallel to each other within the anode electrode (ANO), separated by a certain distance in the lateral direction (X-axis direction). Alternatively, the slits (SLTs) can be arranged in the center of the anode electrode (ANO) in the shape of a long rectangle in the lateral direction (X-axis direction). Furthermore, multiple slits (SLTs) can be arranged along the vertical direction (Y-axis direction), separated by a certain distance. These are not the only examples; the slits (SLTs) can also be arranged in an "X" shape or a "+" shape.

[0093] Referring to Figure 8, the light-emitting display device according to the second embodiment of this application has a gate insulating film (GI), an intermediate insulating film (IL), and a protective film (PAS) sequentially laminated on a substrate 110. A color filter (CF) is laminated on the protective film (PAS). A planarization film (PL) is laminated on the color filter (CF).

[0094] The planarization film (PL) comprises a first planarization film (PL1) and a second planarization film (PL2). The first planarization film (PL1) is arranged over the entire area of ​​the substrate 110. The second planarization film (PL2) is arranged over the light-emitting area of ​​the pixel (P). The second planarization film (PL2) has a shape that protrudes from the upper surface of the first planarization film (PL1). The upper surface of the second planarization film (PL2) is positioned higher than the upper surface of the first planarization film (PL1).

[0095] Within a pixel (P), the second planarization layer (PL2) has a shape divided into two by a slit (SLT). However, referring to Figure 7, the upper and lower edges of the slit (SLT) do not separate the second planarization layer (PL2). That is, the second planarization layer (PL2) can have a connected structure at the upper and lower edges of the pixel (P). The bottom surface of the slit (SLT) portion in the second planarization layer (PL2) may be the same as the upper surface of the first planarization layer (PL1). However, it is not limited to this, and the bottom surface of the slit (SLT) can be positioned slightly higher than the upper surface of the first planarization layer (PL1). In this case, the bottom surface of the slit (SLT) is the bottom surface of the etched second planarization layer (PL2), and the upper surface of the first planarization layer (PL1) is not exposed by the slit (SLT). As another example, a portion of the first planarization layer (PL1) can be further etched to position the bottom of the slit (SLT) within the interior of the first planarization layer (PL1).

[0096] An anode electrode (ANO) is positioned on the upper surface of the second planarization layer (PL2). In particular, an anode electrode (ANO) may not be positioned in the slit (SLT) region. In Figure 8, the anode electrode (ANO) appears to be bisected by the slit (SLT). However, as shown in the plan view Figure 7, the slit (SLT) is positioned within the internal region of the anode electrode (ANO) at a certain distance from its upper and lower edges. Therefore, the anode electrode (ANO) is not bisected by the slit (SLT), and a structure in which the anode electrode (ANO) is physically and electrically connected within the pixel can be maintained.

[0097] A light-emitting layer (EL) is laminated on top of the first planarization film (PL1), the second planarization film (PL2), and the anode electrode (ANO). The light-emitting layer (EL) covers the top surface of the first planarization film (PL1), the side walls of the second planarization film (PL2), and the top surface of the anode electrode (ANO). A cathode electrode (CAT) is laminated on the light-emitting layer (EL). The cathode electrode (CAT) is in surface contact with the light-emitting layer (EL). Therefore, the light-emitting layer (EL) and the cathode electrode (CAT) are laminated along the cross-sectional profiles of the first planarization film (PL1) and the second planarization film (PL2). Consequently, at the thickness difference between the first planarization film (PL1) and the second planarization film (PL2), i.e., the stepped portion, the cathode electrode (CAT) forms a micromirror structure. In particular, since micromirrors are formed on each of the second planarization film (PL2) that is divided by the slit (SLT), in the second embodiment, two micromirror structures are formed within the pixel (P).

[0098] The second planarization film (PL2) can have a higher refractive index than the first planarization film (PL1). Alternatively, the first planarization film (PL1) and the second planarization film (PL2) can be formed from materials having the same refractive index. For example, the anode electrode (ANO) can have a refractive index of 2.0 to 2.3. The second planarization film (PL2) can have a refractive index of 1.8 to 2.0, which is the same as or about 0.2 less than that of the anode electrode (ANO). On the other hand, the first planarization film (PL1) can be made of a transparent organic material having a refractive index of 1.3 to 1.5, which is 0.5 or more lower than that of the second planarization film (PL2).

[0099] Light generated in the light-emitting layer (EL) is radiated in the downward 180-degree direction by the same mechanism as described in the first embodiment. The anode electrode (ANO) is made of a transparent conductive material, and the second planarization film (PL2) has the same refractive index as the anode electrode (ANO). Most of the light emitted from the light-emitting layer (EL) and incident on the anode electrode (ANO) is incident on the second planarization film (PL2).

[0100] Since the refractive index of the second planarization layer (PL2) may be slightly lower than that of the anode electrode (ANO), some of the light can be totally reflected at the interface between the anode electrode (ANO) and the second planarization layer (PL2). The totally reflected light follows the optical path explained in Figure 5. As shown in TIFF2026116686000010.tif4170, the light is reflected by the micromirror structure formed on the edge of the anode electrode (ANO) and the slit (SLT), and emitted in the direction of the color filter (CF).

[0101] Figure 8 shows the path through which light emitted from the light-emitting layer (EL) is extracted to the outside, indicated by arrows. For convenience, Figure 8 shows the light extraction path in the micromirror structure formed on the left, but the same light extraction path exists in the micromirror structure formed on the right.

[0102] Of the light emitted from the light-emitting layer (EL) in the central region of the anode electrode (ANO), 20% to 30% of the light can propagate laterally (horizontally or along the X-axis) and disappear while undergoing repeated total internal reflection within the light-emitting diode (OLE) (optical path in Figure 5). (See TIFF2026116686000011.tif4170). In the second embodiment, the second planarization film (PL2) is formed with a highly refractive material having a refractive index difference of 0.2 or less from the anode electrode (ANO). Therefore, most of the light incident on the anode electrode (ANO) is incident on the second planarization film (PL2) and is emitted through the color filter (CF).

[0103] In particular, in the absence of a slit (SLT), light confined within the light-emitting diode (OLE) at the center of the pixel (P) and totally internalized horizontally has a very long path and can be consumed as thermal energy before reaching the micromirror (optical path in Figure 5). (See TIFF2026116686000012.tif4170). However, in the second embodiment, the pixels (P) are divided by the slit (SLT), shortening the path of light transmitted horizontally within the light-emitting diode (OLE). Therefore, it can be extracted to the outside by micromirrors formed in the slit (SLT) before it is consumed as thermal energy.

[0104] In this case, since no anode electrode (ANO) is placed in the area where the slit (SLT) is formed, a light-emitting diode (OLE) is not formed. Therefore, the slit (SLT) region corresponds to a non-light-emitting region. On the other hand, cathode electrodes (CAT) are stacked on the inclined sidewalls of the slit (SLT) to form a micromirror structure. Therefore, the inclined sidewalls of the slit (SLT) can be included in the light-emitting region.

[0105] Of the light incident on the second planarization film (PL2), approximately 30-40% that satisfies the total internal reflection condition at the interface with the first planarization film (PL1) is re-incident to the anode electrode (ANO) and re-reflected by the cathode electrode (CAT) located above the anode electrode (ANO). In this process, the micromirror structure splits the total internal reflection angle between the first planarization film (PL1) and the second planarization film (PL2), causing most of the light to enter the first planarization film (PL1). Subsequently, the light passes through the first planarization film (PL1), through the color filter (CF) located below, and exits to the outside of the substrate 110.

[0106] The light-emitting display device according to the second embodiment can improve light extraction efficiency by extracting light generated in the light-emitting layer (EL) using a cathode electrode (CAT) having a micromirror structure formed by island-shaped protruding second planarization film (PL2). In particular, since the second planarization film (PL2) has the same or slightly smaller refractive index as the anode electrode (ANO), the amount of light that can be confined and lost inside the light-emitting diode (OLE) can be minimized, thereby improving light extraction efficiency.

[0107] In particular, by forming a slit (SLT) in the center of the second planarization layer (PL2), multiple micromirror structures can be provided. The slit (SLT) can be formed by the upper surface of the second planarization layer (PL2) being indented downwards. As a result, the light generated in the light-emitting layer (EL) can be extracted to the outside by the micromirror structure before it is trapped inside the light-emitting diode (OLE) under total internal reflection conditions and consumed as thermal energy. [Examples]

[0108] The third embodiment of the light-emitting device according to this application will be described below with reference to Figures 7 and 9. Figure 9 is an enlarged cross-sectional view showing the structure of the third embodiment of the light-emitting device according to this application, cut along line III-III' in Figure 7.

[0109] Referring to Figure 9, the light-emitting device according to the third embodiment has a structure very similar to the light-emitting device according to the second embodiment described in Figure 8. The difference is that in the third embodiment, an anode electrode (ANO) is further arranged in the portion where the slit (SLT) is formed.

[0110] In a structure similar to that of the second embodiment, since no anode electrode (ANO) is placed in the portion where the slit (SLT) is formed, the slit (SLT) region may be a region that does not emit light in substance. In the third embodiment, the anode electrode (ANO) is placed on the upper surface of the first planarization film (PL1), which is the bottom of the slit (SLT). Referring to Figure 7, which has a planar structure, the anode electrode (ANO) placed at the bottom of the slit (SLT) can be physically and electrically connected to the anode electrode (ANO) placed on the upper surface of the second planarization film (PL2) via the upper and lower edges of the slit (SLT).

[0111] As a result, a light-emitting diode (OLE) structure can be formed in the slit (SLT) portion, where the anode electrode (ANO), light-emitting layer (EL), and cathode electrode (CAT) are stacked. Therefore, the slit (SLT) portion is included in the light-emitting region, and a larger light-emitting area can be secured.

[0112] A third embodiment of this application provides a bottom-emitting display device with improved light extraction efficiency due to a micromirror structure. Furthermore, the light-emitting display device according to this third embodiment can increase luminous efficiency by arranging a slit (SLT) in the center (or central region) of a pixel (P) to extract light that could be confined inside the light-emitting diode (OLE) and consumed as thermal energy. In addition, the light-emitting area can be further improved by configuring a light-emitting diode (OLE) in the slit (SLT) region as well. [Examples]

[0113] The fourth embodiment will be described below with reference to Figures 10 and 11. Figure 10 is a plan view enlarged showing the structure of the fourth embodiment of the present application. Figure 11 is a cross-sectional view enlarged showing the structure of the fourth embodiment of the present application, cut along line IV-IV' in Figure 10. In Figure 10, the cut line IV-IV' is " This is a cutout of the file "TIFF2026116686000013.tif3170".

[0114] Referring to Figure 10, the light-emitting display device according to the fourth embodiment of this application comprises a rectangular pixel (P) that is long in the vertical direction. In particular, two rectangular slits (SLT) that are short in the horizontal direction (X-axis) and wide in the vertical direction (Y-axis) are arranged in the center of the pixel (P) (or in the center of the anode electrode (ANO). For example, the first slit (SLT1) and the second slit (SLT2) are arranged parallel to each other at a certain distance apart.

[0115] This is not an exhaustive list; the number of slits (SLTs) within a pixel (P) can range from 2 to 5. While Figure 10 shows the case of a red pixel (RP), pixels of other colors can also be equipped with slits (SLTs) of the same structure. The structure of a pixel (P) in a plan view, excluding the slits (SLTs), is the same as described in Figure 3, so a detailed explanation is omitted.

[0116] Referring to Figure 11, the light-emitting device according to the fourth embodiment of this application has a gate insulating film (GI), an intermediate insulating film (IL), and a protective film (PAS) sequentially laminated on a substrate 110. A color filter (CF) is laminated on the protective film (PAS). A planarization film (PL) is laminated on the color filter (CF).

[0117] The planarization film (PL) comprises a first planarization film (PL1) and a second planarization film (PL2). The first planarization film (PL1) is arranged over the entire area of ​​the substrate 110, and the second planarization film (PL2) is arranged over the light-emitting area of ​​the pixel (P). The second planarization film (PL2) has a shape that protrudes from the upper surface of the first planarization film (PL1). The upper surface of the second planarization film (PL2) is positioned higher than the upper surface of the first planarization film (PL1).

[0118] Within a pixel (P), the second planarization layer (PL2) has a shape divided into three regions by multiple sub-slits arranged at a certain distance apart, along with the first slit (SLT1) and the second slit (SLT2). However, referring to Figure 10, the first slit (SLT1) and the second slit (SLT2) do not separate the second planarization layer (PL2) at the left and right edges of the pixel (P). That is, the second planarization layer (PL2) can have a connected structure at the left and right edges (or the first and second edges) of the pixel (P) (here, the top and bottom edges of the pixel (P) can be named the third edge and the fourth edge, respectively). The bottom surfaces of the first slit (SLT1) and the second slit (SLT2) in the second planarization layer (PL2) may be identical to the top surface of the first planarization layer (PL1). The first slit (SLT1) and the second slit (SLT2) can expose the upper surface of the first planarization film (PL1). However, the bottom surfaces of the first slit (SLT1) and the second slit (SLT2) can be positioned slightly higher than the upper surface of the first planarization film (PL1). In this case, the first planarization film (PL1) is not exposed by the first slit (SLT1) and the second slit (SLT2), and the bottom surfaces of the first slit (SLT1) and the second slit (SLT2) may be the bottom surfaces of the recessed second planarization film (PL2). As another example, a portion of the first planarization film (PL1) can be further etched to position the bottom surfaces of the first slit (SLT1) and the second slit (SLT2) in an indented position within the first planarization film (PL1).

[0119] An anode electrode (ANO) is positioned on the upper surface of the second planarization layer (PL2). Anode electrodes (ANO) are also positioned on the bottom surfaces of the first slit (SLT1) and the second slit (SLT2). As shown in the plan view Figure 10, the first slit (SLT1) and the second slit (SLT2) are positioned within the internal region of the anode electrode (ANO), at a certain distance from its left and right edges. Therefore, the anode electrodes (ANO) have a connected structure within the pixel (P).

[0120] Since anode electrodes (ANO) are also placed in the first slit (SLT1) and the second slit (SLT2), light-emitting diodes (OLEs) are formed. Therefore, the first slit (SLT1) and the second slit (SLT2) are also included in the light-emitting region. Consequently, the light-emitting area can be made larger compared to the case where anode electrodes (ANO) are not placed in the first slit (SLT1) and the second slit (SLT2).

[0121] For example, the anode electrode (ANO) is positioned at the bottom of the first slit (SLT1) and along the etched sidewall of the second planarization film (PL2) located to the left of the first slit (SLT1) (here, the left etched sidewall located on the first edge of the bottom surface in each slit, and the right etched sidewall located on the second edge of the bottom surface opposite the first sidewall, can be named the first sidewall and the second sidewall, respectively), and extends up to the upper surface of the second planarization film (PL2). Alternatively, the anode electrode (ANO) is positioned at the bottom of the second slit (SLT2) and along the etched sidewall of the second planarization film (PL2) located to the right of the second slit (SLT2), and extends up to the upper surface of the second planarization film (PL2).

[0122] A light-emitting layer (EL) is laminated on top of the first planarization film (PL1), the second planarization film (PL2), and the anode electrode (ANO). A cathode electrode (CAT) is laminated on the light-emitting layer (EL). The cathode electrode (CAT) is in surface contact with the light-emitting layer (EL). Therefore, the light-emitting layer (EL) and the cathode electrode (CAT) are laminated along the cross-sectional profiles of the first planarization film (PL1) and the second planarization film (PL2). Consequently, at the step portion between the first planarization film (PL1) and the second planarization film (PL2), the cathode electrode (CAT) forms a micromirror structure. In particular, since micromirrors are formed in each of the three parts of the second planarization film (PL2) divided by the first slit (SLT1) and the second slit (SLT2), the fourth embodiment has three micromirror structures within the pixel (P).

[0123] The second planarization film (PL2) can have a higher refractive index than the first planarization film (PL1). For example, the anode electrode (ANO) can have a refractive index of 2.0 to 2.3. The second planarization film (PL2) can have a refractive index of 1.8 to 2.0, which is the same as or about 0.2 lower than that of the anode electrode (ANO). On the other hand, the first planarization film (PL1) can be made of a transparent organic material having a refractive index of 1.3 to 1.5, which is 0.5 or more lower than that of the second planarization film (PL2).

[0124] Light generated in the light-emitting layer (EL) is radiated in the downward 180-degree direction by the same mechanism as described in the first embodiment. The anode electrode (ANO) is made of a transparent conductive material, and the second planarization film (PL2) has a refractive index similar to that of the anode electrode (ANO). Most of the light emitted from the light-emitting layer (EL) and incident on the anode electrode (ANO) is incident on the second planarization film (PL2).

[0125] Since the refractive index of the second planarization film (PL2) may be slightly lower than that of the anode electrode (ANO), some of the light can be totally internalized at the interface between the anode electrode (ANO) and the second planarization film (PL2). The totally internalized light is reflected by the micromirror structures formed at the end of the anode electrode (ANO) and the first slit (SLT1) and second slit (SLT2), and emitted in the direction of the color filter (CF).

[0126] Of the light emitted from the light-emitting layer (EL) in the central region of the anode electrode (ANO), 20% to 30% of the light may propagate laterally (horizontally or along the X-axis) or disappear within the light-emitting diode (OLE) while undergoing repeated total internal reflection (optical path in Figure 5). (See TIFF2026116686000014.tif4170). The fourth embodiment is characterized by forming a second planarization film (PL2) with a high-refractive index material having a refractive index difference of 0.2 or less from the anode electrode (ANO). Therefore, most of the light that passes through the anode electrode (ANO) is incident on the second planarization film (PL2) and emitted through the color filter (CF). The path through which the light is extracted is shown by arrows in Figure 11.

[0127] In particular, in the absence of a slit (SLT), light confined within the light-emitting diode (OLE) at the center of the pixel (P) and totally internalized horizontally has a very long path and can be consumed as thermal energy before reaching the micromirror (optical path in Figure 5). (See TIFF2026116686000015.tif4170). However, in the fourth embodiment, the pixels (P) are divided by the slit (SLT), shortening the path of light transmitted horizontally within the light-emitting diode (OLE). Therefore, the light can be extracted to the outside by micromirrors formed in the slit (SLT) before it is consumed as thermal energy.

[0128] Of the light incident on the second planarization film (PL2), approximately 30-40% of the light that satisfies the total internal reflection condition at the interface with the first planarization film (PL1) is re-incident to the anode electrode (ANO) and reflected again by the cathode electrode (CAT) located above the anode electrode (ANO). In this process, the micromirror structure splits the total internal reflection angle between the first planarization film (PL1) and the second planarization film (PL2), causing most of the light to be incident on the first planarization film (PL1). Subsequently, the light passes through the first planarization film (PL1), through the color filter (CF) located below it, and is emitted to the outside of the substrate 110. That is, the light generated in the light-emitting layer (EL) located on the first sidewall of the slit (SLT) on the anode electrode (ANO) passes through the second planarization film (PL2), is reflected by the cathode electrode (CAT) facing the first sidewall, passes through the first planarization film (PL1), and is emitted to the outside of the substrate 110.

[0129] Furthermore, the light-emitting display device according to the fourth embodiment has a structure in which anode electrodes (ANO) are stacked on the upper surface of the second planarization film (PL2), extending along the sides of the first slit (SLT1) and the second slit (SLT2) to the bottom surfaces of the first slit (SLT1) and the second slit (SLT2). Therefore, anode electrodes (ANO), light-emitting layers (EL), and cathode electrodes (CAT) are also stacked on the side walls of the first slit (SLT1) and the second slit (SLT2) to form light-emitting diodes (OLE). In other words, light is also generated on the side walls of the first slit (SLT1) and the second slit (SLT2).

[0130] Light emitted from the inclined surfaces of the first slit (SLT1) and the second slit (SLT2) penetrates the second planarization film (PL2) and travels to the opposite inclined surface of the second planarization film (PL2). Micromirrors formed by stacking cathode electrodes (CATs) are arranged on the inclined surface of the second planarization film (PL2). Therefore, light emitted from the inclined surfaces of the first slit (SLT1) and the second slit (SLT2) travels through the optical path As shown in TIFF2026116686000016.tif4170, the light is reflected by micromirrors and emitted from the bottom of the substrate 110.

[0131] The light-emitting device according to the fourth embodiment can improve light extraction efficiency by extracting light generated in the light-emitting layer (EL) using a cathode electrode (CAT) having a micromirror structure formed by island-like protruding second planarization films (PL2). In particular, since the second planarization film (PL2) has the same or slightly smaller refractive index as the anode electrode (ANO), the amount of light that can be confined and lost inside the light-emitting diode (OLE) can be minimized, thereby improving light extraction efficiency.

[0132] In particular, a slit (SLT) is formed in the central region of the second planarization film (PL2), and a large number of micromirror structures having a size (width or length) smaller than the width and length of the pixel can be provided. As a result, before the light generated in the light-emitting layer (EL) is confined inside the organic light-emitting diode (OLE) under the total reflection condition and consumed as thermal energy, it can be configured to be extracted to the outside by the micromirror structure.

Embodiment

[0133] Hereinafter, a fifth embodiment will be described with reference to FIGS. 12 and 13. FIG. 12 is an enlarged plan view showing the structure of a light-emitting display device according to the fifth embodiment of this application. FIG. 13 is an enlarged cross-sectional view showing the structure of a light-emitting display device according to the fifth embodiment of this application taken along V-V' in FIG. 12. In FIG. 12, the cut line V-V' is cut in a "匚" shape.

[0134] Referring to FIG. 12, the light-emitting display device according to the fifth embodiment of this application includes pixels (P) having a rectangular shape that is long in the vertical direction. In particular, three rectangular slits (SLT) that are long in the horizontal direction and narrow in the vertical direction are arranged in the central portion of the pixel (P) (or the central portion of the anode electrode (ANO)). The side corresponding to the horizontal length of each slit (SLT) is arranged parallel to the upper side of the pixel (P) between the upper side and the lower side of the pixel (P). As an example, the first slit (SLT1), the second slit (SLT2), and the third slit (SLT3) are arranged in parallel at a certain distance apart.

[0135] Although FIG. 12 shows the case of a red pixel (RP), pixels of other colors can also be provided with slits (SLT) having the same structure. Since the structure of the pixel (P) in the plan view excluding the slit (SLT) is the same as that described in FIG. 3, a detailed description will be omitted.

[0136] Referring to Figure 13, the fifth embodiment of this application of a light-emitting device has a gate insulating film (GI), an intermediate insulating film (IL), and a protective film (PAS) sequentially laminated on a substrate 110. A color filter (CF) is laminated on the protective film (PAS). A planarization film (PL) is laminated on the color filter (CF).

[0137] The planarization film (PL) comprises a first planarization film (PL1) and a second planarization film (PL2). The first planarization film (PL1) is positioned over the entire area of ​​the pixel (P), and the second planarization film (PL2) is positioned over the light-emitting area. The second planarization film (PL2) has a shape that protrudes from the upper surface of the first planarization film (PL1). The upper surface of the second planarization film (PL2) is positioned higher than the upper surface of the first planarization film (PL1).

[0138] The slit (SLT) may comprise a first slit (SLT1), a second slit (SLT2), and a third slit (SLT3). That is, within a pixel (P), the second planarization film (PL2) may have a shape divided into four regions by the first slit (SLT1), the second slit (SLT2), and the third slit (SLT3). However, referring to Figure 12, the left and right sides of the slit (SLT) do not separate the second planarization film (PL2). That is, the second planarization film (PL2) may have a structure in which the left and right sides of the pixel (P) are connected. The bottom surfaces of the first slit (SLT1), the second slit (SLT2), and the third slit (SLT3) can expose the upper surface of the first planarization film (PL1). The bottom surfaces of the first slit (SLT1), second slit (SLT2), and third slit (SLT3) can be positioned slightly higher than the upper surface of the first planarization film (PL1). In this case, the first planarization film (PL1) is not exposed by the first slit (SLT1), second slit (SLT2), and third slit (SLT3), and the bottom surfaces of the first slit (SLT1), second slit (SLT2), and third slit (SLT3) can also be the bottom surfaces of the second planarization film (PL2) that have been indented. As another example, the bottom surfaces of the first slit (SLT1), second slit (SLT2), and third slit (SLT3) can also be positioned where a portion of the first planarization film (PL1) has been further etched, causing the bottom surfaces of the first slit (SLT1) and second slit (SLT2) to be intruded into the interior of the first planarization film (PL1).

[0139] An anode electrode (ANO) is positioned on the upper surface of the second planarization layer (PL2). Anode electrodes (ANO) are also positioned on the bottom surfaces of the first slit (SLT1), second slit (SLT2), and third slit (SLT3). As shown in the plan view Figure 12, the first slit (SLT1), second slit (SLT2), and third slit (SLT3) are positioned within the internal region of the anode electrode (ANO), at a certain distance from its left and right edges. Therefore, the anode electrodes (ANO) have a connected structure within the pixel (P).

[0140] For example, the anode electrode (ANO) is positioned at the bottom of the first slit (SLT1), along the etched sidewall of the second planarization film (PL2) on the left side of the first slit (SLT1), and extending up to the upper surface of the second planarization film (PL2). The anode electrode (ANO) is also positioned at the bottom of the second slit (SLT2), along the etched sidewalls of the second planarization film (PL2) on both the left and right sides of the second slit (SLT2), and extending up to the upper surface of the second planarization film (PL2). The anode electrode (ANO) is also positioned at the bottom of the third slit (SLT3), along the etched sidewall of the second planarization film (PL2) on the right side of the third slit (SLT3), and extending up to the upper surface of the second planarization film (PL2).

[0141] A light-emitting layer (EL) is laminated on top of the first planarization layer (PL1), the second planarization layer (PL2), and the anode electrode (ANO). A cathode electrode (CAT) is laminated on the light-emitting layer (EL). The cathode electrode (CAT) is in surface contact with the light-emitting layer (EL). The light-emitting layer (EL) and the cathode electrode (CAT) are laminated along the cross-sectional profiles of the first planarization layer (PL1) and the second planarization layer (PL2). Therefore, at the step portion between the first planarization layer (PL1) and the second planarization layer (PL2), the cathode electrode (CAT) forms a micromirror structure. In particular, since micromirrors are formed in each of the four parts of the second planarization layer (PL2) divided by the first slit (SLT1), the second slit (SLT2), and the third slit (SLT3), the fifth embodiment has four micromirror structures within the pixel (P).

[0142] The second planarization film (PL2) can have a higher refractive index than the first planarization film (PL1). For example, the anode electrode (ANO) can have a refractive index of 2.0 to 2.3. The second planarization film (PL2) can have a refractive index of 1.8 to 2.0, which is the same as or about 0.2 lower than that of the anode electrode (ANO). On the other hand, the first planarization film (PL1) can be made of a transparent organic material having a refractive index of 1.3 to 1.5, which is 0.5 or more lower than that of the second planarization film (PL2).

[0143] The light generated in the light-emitting layer (EL) can have a light-emitting path through the same mechanism as described in the fourth embodiment. Therefore, a detailed explanation of the light extraction path is omitted and is shown by arrows in Figure 13.

[0144] In the fifth embodiment, since the anode electrode (ANO) has a structure that is long in the vertical direction, the path of light that undergoes total internal reflection within the light-emitting diode (OLE) towards the upper or lower edge from the center of the anode electrode (ANO) is even longer than the path of light that undergoes total internal reflection towards the left or right edge. Therefore, there is a higher possibility that light undergoing total internal reflection along the vertical direction will be lost as thermal energy. As a result, in the fifth embodiment, by arranging multiple slits that are long in the horizontal direction adjacent to each other along the vertical direction, the amount of light lost due to total internal reflection can be minimized and the light extraction efficiency can be maximized.

[0145] The light-emitting device according to the fifth embodiment can improve light extraction efficiency by extracting light generated in the light-emitting layer (EL) using a cathode electrode (CAT) having a micromirror structure formed by island-shaped protruding second planarization films (PL2). In particular, since the second planarization film (PL2) has the same or slightly smaller refractive index as the anode electrode (ANO), the amount of light that can be confined and lost inside the light-emitting diode (OLE) can be minimized, thereby improving light extraction efficiency.

[0146] Furthermore, the light-emitting device according to the fifth embodiment has a structure in which anode electrodes (ANOs) are stacked on the upper surface of the second planarization film (PL2), extending along the sides of the first slit (SLT1), second slit (SLT2), and third slit (SLT3) to the bottom surfaces of the first slit (SLT1), second slit (SLT2), and third slit (SLT3). Therefore, light-emitting diodes (OLEs) are formed in the first slit (SLT1), second slit (SLT2), and third slit (SLT3). Thus, the first slit (SLT1), second slit (SLT2), and third slit (SLT3) are also included in the light-emitting region.

[0147] Furthermore, an anode electrode (ANO), light-emitting layer (EL), and cathode electrode (CAT) are stacked on the side walls of the first slit (SLT1), second slit (SLT2), and third slit (SLT3) to form a light-emitting diode (OLE). In other words, light is also generated on the side walls of the first slit (SLT1), second slit (SLT2), and third slit (SLT3).

[0148] Light emitted from the inclined surfaces of the first slit (SLT1), second slit (SLT2), and third slit (SLT3) penetrates the second planarization film (PL2) and travels to the opposite inclined surface of the second planarization film (PL2). Micromirrors formed by stacking cathode electrodes (CATs) are arranged on the inclined surface of the second planarization film (PL2). Therefore, the light emitted from the inclined surfaces of the first slit (SLT1), second slit (SLT2), and third slit (SLT3) follows the optical path shown in Figure 13. As shown in TIFF2026116686000017.tif4170, the light is reflected by micromirrors and emitted from the bottom of the substrate 110.

[0149] In particular, multiple slits (SLTs) can be formed in the central part of the second planarization layer (PL2), providing numerous micromirror structures with a size (length and width) smaller than the width and length of the pixel. As a result, light confined within the light-emitting diode (OLE) under total internal reflection conditions between the anode electrode (ANO) and the second planarization layer (PL2) in the central part of the anode electrode (ANO) can be extracted to the outside before it is extinguished as thermal energy while traveling horizontally.

[0150] In the first to fifth embodiments described above, the focus was on bankless structures in which a bank covering the edge of the anode electrode (ANO) and defining the light-emitting region is eliminated. Here, a bank refers to an insulating film that covers the edge of the anode electrode (ANO) while exposing the central region of the anode electrode (ANO) and defining the light-emitting region. The bank can also be named a pixel-defining film. In the light-emitting display device according to this application, it is possible to have no bank at all. However, it is not limited to this, and it is also possible to have a structure in which a bank is placed on the upper and lower edges of the pixel, i.e., the region where the driving element is located, and the bank is removed from the left and right edges of the pixel. Furthermore, the structure according to this application can also be applied to structures in which the bank is arranged to surround the periphery of the pixel. In this application, the focus was on describing a bankless structure that is advantageous for low-power driving and can ensure the maximum aperture ratio.

[0151] In summary, the light-emitting device according to this application includes a substrate, a plurality of pixels, a first planarization film, a second planarization film, a slit, an anode electrode, a light-emitting layer, and a cathode electrode. The plurality of pixels are arranged on the substrate and comprise light-emitting regions and non-light-emitting regions. The first planarization film is arranged on the substrate. The second planarization film is arranged on the first planarization film over the light-emitting regions. The slit is located in the center of the second planarization film and has a recessed shape below the upper surface of the second planarization film. The anode electrode is arranged on the upper surface of the second planarization film and on the recessed bottom surface of the slit. The light-emitting layer is arranged on top of the anode electrode, the first planarization film, and the second planarization film. The cathode electrode is arranged on the light-emitting layer.

[0152] As an example, the light-emitting layer is laminated while covering the upper surface of the first planarization film, the sidewall of the second planarization film, and the upper surface of the anode electrode. The cathode electrode is laminated on the surface of the light-emitting layer in surface contact with the light-emitting layer.

[0153] As an example, the light-emitting display device further includes a color filter and a drive element layer. The color filter is located between the bottom of the first planarization film and the substrate. The drive element layer is located between the color filter and the substrate.

[0154] For example, the slit includes a bottom surface, one side surface, and another side surface. The one side surface is located on one side of the bottom surface. The other side surface is located on the other side of the bottom surface and faces the one side surface.

[0155] For example, the slit exposes the upper surface of the first planarization film.

[0156] As an example, the anode electrode is positioned on the upper surface of the second planarization film, extending from one side to the bottom surface.

[0157] For example, light emitted from a light-emitting layer on an anode electrode positioned on one side of the slit penetrates the second planarization film, is reflected by the cathode electrode facing the aforementioned side, penetrates the first planarization film, and exits the substrate.

[0158] As an example, each pixel comprises a first side having a first length in the horizontal direction, a second side having a first length and positioned parallel to the first side, a third side having a second length longer than the first length in the vertical direction, and a fourth side having a second length and positioned parallel to the third side.

[0159] For example, the slit has a rectangular shape in which the vertical length is longer than the horizontal width, and the vertical length is positioned between the first and second sides and parallel to the first side.

[0160] For example, the slit includes a number of sub-slits arranged at regular intervals between the first and second sides.

[0161] For example, the slit has a rectangular shape in which the horizontal length is longer than the vertical width, and the horizontal length is positioned between the third and fourth sides and parallel to the third side.

[0162] For example, the slit includes a number of sub-slits arranged at regular intervals between the third and fourth sides.

[0163] For example, the first and second planarization films contain materials with the same refractive index.

[0164] As an example, the first planarization film includes a first transparent insulating material having a first refractive index. The second planarization film includes a second transparent insulating material having a second refractive index greater than the first refractive index.

[0165] For example, the first refractive index has a value at least 0.5 smaller than the second refractive index.

[0166] As an example, the second planarization film has island-like structures protruding from the upper surface of the first planarization film.

[0167] For example, the bottom surface of the slit is located below the upper surface of the first planarization film.

[0168] For example, the second planarization film has the same or slightly lower refractive index as the anode electrode.

[0169] For example, multiple sub-slits are arranged within the light-emitting region.

[0170] For example, light generated on the side of the slit penetrates the second planarization layer and travels to the opposite wall of the second planarization layer. The side wall of the second planarization layer is positioned opposite the cathode electrode.

[0171] The features, structures, effects, etc., described in the examples of this application described above are included in, and not necessarily limited to, at least one example of this application. Furthermore, the features, structures, effects, etc., exemplified in at least one example of this application can be combined or modified and implemented in other examples by a person with ordinary skill in the art to which this application belongs. Accordingly, content related to such combinations and modifications should be construed as being included in the scope of this application.

[0172] The application described above is not limited to the embodiments and accompanying figures, and it will be apparent to those ordinary skill in the art to which this application pertains that various substitutions, modifications, and alterations are possible without departing from the technical subject matter of this application. Accordingly, the scope of this application is indicated by the claims set forth below, and it should be interpreted that the meaning and scope of the claims, and all modified or altered forms derived from their equivalent concepts, are included within the scope of this application.

Claims

1. substrate, A plurality of pixels arranged on the substrate, each pixel comprising an emitting region and a non-emitting region, A first planarization film disposed on the substrate, A second planarization film disposed on the first planarization film of the light-emitting region, A slit is located in the center of the second planarization film and is recessed beneath the upper surface of the second planarization film. Anode electrodes are positioned on the upper surface of the second planarization film and on the bottom surface of the slit. The anode electrode, the first planarization film and the second planarization film, and the light-emitting layer disposed on them, A light-emitting display device, including a cathode electrode disposed on the light-emitting layer.

2. The light-emitting layer covers the upper surface of the first planarization film, the side wall of the second planarization film, and the upper surface of the anode electrode. The light-emitting device according to claim 1, wherein the cathode electrode is laminated on the surface of the light-emitting layer in surface contact with the light-emitting layer.

3. A color filter disposed below the first planarization film and on the substrate, and The light-emitting device according to claim 1, further comprising a driving element layer disposed below the color filter and on the substrate.

4. The aforementioned slit, The bottom surface, One side surface located on one side of the bottom surface, and The light-emitting display device according to claim 1, which is arranged on the other side of the bottom surface and includes the other side facing the one side surface.

5. The light-emitting device according to claim 4, wherein the slit exposes the upper surface of the first planarized film.

6. The light-emitting device according to claim 4, wherein the anode electrode is extended from the upper surface of the second planarization film through one side of the slit to the bottom surface of the slit.

7. The light-emitting device according to claim 6, wherein light emitted from the light-emitting layer on the anode electrode, which is positioned on one side of the slit, penetrates the second planarization film, is reflected by the cathode electrode facing the one side, penetrates the first planarization film, and exits from the substrate.

8. Each pixel, A first side having a first length along the transverse direction, A second side having the first length and arranged parallel to the first side, A third side having a second length longer than the first length along the vertical direction, and The light-emitting display device according to claim 1, comprising a fourth side having the second length and arranged parallel to the third side.

9. The light-emitting display device according to claim 8, wherein the slit has a rectangular shape in which the length in the vertical direction is longer than the width in the horizontal direction, and the length in the vertical direction is arranged between the first side and the second side and parallel to the first side.

10. The light-emitting display device according to claim 9, wherein the slit includes a plurality of sub-slits arranged at regular intervals between the first and second sides.

11. The aforementioned slit, The light-emitting display device according to claim 8, having a rectangular shape in which the horizontal length is longer than the vertical width, and the horizontal length is arranged parallel to the third side between the third and fourth sides.

12. The light-emitting display device according to claim 11, wherein the slit includes a plurality of sub-slits arranged at regular intervals between the third and fourth sides.

13. The light-emitting device according to claim 1, wherein the first planarization film and the second planarization film contain materials with the same refractive index.

14. The first planarization film comprises a first transparent insulating material having a first refractive index, The light-emitting device according to claim 1, wherein the second planarization film includes a second transparent insulating material having a second refractive index greater than the first refractive index.

15. The light-emitting display device according to claim 14, wherein the first refractive index is at least 0.5 less than the second refractive index.

16. The light-emitting device according to claim 1, wherein the second planarization film has island-like structures protruding from the upper surface of the first planarization film.

17. The light-emitting device according to claim 1, wherein the bottom surface of the slit is positioned below the upper surface of the first planarized film.

18. The light-emitting device according to claim 1, wherein the second planarization film has the same or slightly smaller refractive index as the anode electrode.

19. The light-emitting device according to claim 10, wherein the plurality of sub-slits are included in the light-emitting region.

20. Light generated on the side of the slit penetrates the second planarization film and propagates to the opposite wall of the second planarization film. The light-emitting device according to claim 1, wherein the side wall of the second planarization film is arranged opposite to the cathode electrode.

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