Foreline heating regenerator

Abstract

A semiconductor processing system and system components for providing regenerative heating to a foreline component are described. The system comprises a plasma-based processing chamber. The processing chamber comprises one or more fluid paths configured to circulate a heat transfer fluid. The system also comprises one or more vacuum systems configured to discharge processing gases from the processing chamber, and one or more vacuum systems comprises one or more vacuum pumps and a foreline vent. The system comprises a foreline regenerator. The foreline regenerator comprises a regenerator shell that at least partially encloses the foreline vent, and the regenerator shell comprises a heat transfer fluid input and a heat transfer fluid output, the heat transfer fluid input being coupled to the output of the processing chamber.

Description

Background 【0001】 This specification relates to semiconductor systems, processes, and devices. 【0002】 Plasma etching can be used in the manufacture of integrated circuits in semiconductor processes. Integrated circuits can be formed from multiple (e.g., two or more) layer compositions. Different chemical compositions of etching gases (e.g., different gas mixtures) can be used to generate plasma in a processing environment, thereby improving the accuracy and selectivity for the layer composition to be etched in the chemical composition of a specific etching gas. Usually, plasma etching is performed in a low-pressure processing chamber. One or more vacuum pumps discharge gas molecules from the processing chamber via a foreline vent. Overview 【0003】 This specification describes a technique for heating foreline components of a plasma-based processing system by utilizing surplus thermal energy from a heat transfer fluid used for heating a plasma processing chamber. A plasma-based processing system generates plasma within a processing region and executes a specific process (e.g., plasma etching of a substrate held within a processing chamber). The processing chamber is coupled to a foreline that provides an exhaust path when generating and maintaining a vacuum within the processing chamber. Maintaining the vacuum includes discharging by-products generated in the plasma etching process. The by-products may include various polymers. The foreline is heated to a temperature similar to the processing chamber temperature to prevent the discharged by-products from depositing or adhering to the inner wall of the foreline. The accumulation of polymers can ultimately have an adverse effect on the performance of the plasma-based processing system. 【0004】 To maintain the required temperature within the processing chamber, the processing chamber is heated by circulating a high-temperature heat transfer fluid that transfers heat to the chamber and is discharged from the processing chamber. This specification describes a technique for guiding the heated heat transfer fluid discharged from the processing chamber to a foreline regenerator shell before sending it to a post-heat exchanger. In this way, the foreline is heated using a regenerating heater that utilizes the waste heat held by the heat transfer fluid. 【0005】 In general, an innovative embodiment of the subject matter described herein can be embodied in a semiconductor processing system. This system includes a plasma-based processing chamber, which includes one or more fluid paths configured to circulate a heat transfer fluid. The system also includes one or more vacuum systems configured to discharge processing gases from the processing chamber, which include one or more vacuum pumps and a foreline vent. Furthermore, the system includes a foreline regenerator, which includes a regenerator shell that at least partially encloses the foreline vent. The regenerator shell includes a heat transfer fluid input and a heat transfer fluid output. The heat transfer fluid input is coupled to the output of the processing chamber. 【0006】 In general, an innovative embodiment of the subject matter described herein can be embodied in a foreline regenerator. The foreline regenerator includes a shell enclosing at least a portion of the foreline vent of a plasma processing system. The shell is configured to create a gap between the outer surface of the foreline vent and the inner surface of the shell. The foreline regenerator also includes a heat transfer fluid input port configured to receive heat transfer fluid and input the heat transfer fluid into the gap. The foreline regenerator also includes a heat transfer fluid output port configured to output the heat transfer fluid from the gap. 【0007】 In general, an innovative embodiment of the subject matter described herein can be embodied as a method for heating a foreline component. This method includes receiving a heat transfer fluid output from a plasma-based substrate processing chamber at an input port of a regenerator. Furthermore, the method includes heating the foreline component by flowing the heat transfer fluid between the input port and output port of the regenerator. Flowing the heat transfer fluid includes passing the heat transfer fluid from the input port to the regenerator shell. The regenerator shell includes a shell that at least partially encloses the foreline component, and the shell provides a fluid path in the space between the outer surface of the foreline component and the inner surface of the shell. The method includes outputting the heat transfer fluid from the output port of the regenerator. 【0008】 The subject matter of this specification can be implemented in these embodiments and other embodiments, and one or more of the following advantages can be achieved: Heating the foreline prevents processing by-products in the exhaust from adhering to the inner surface of the foreline. By using a regenerative heating process that circulates heat transfer fluid from the processing chamber, the foreline can be heated to substantially the same temperature as the processing chamber, preventing by-product precipitation. Utilizing waste heat from the processing chamber eliminates the need to place one or more separate electric heaters around the foreline. This reduces both manufacturing and operating costs. Furthermore, unlike separate electric heaters, it is not necessary to adjust the heater temperature because it utilizes heat from the heat transfer fluid and the processing chamber supplies heat transfer fluid at a constant temperature. Moreover, utilizing waste heat provides an environmentally friendly and sustainable solution that does not require extra electricity. 【0009】 The following disclosure describes the innovative technology using a specific type of plasma-based processing chamber as an example, but it will be readily apparent that the system and method are equally applicable to various other types of plasma-based substrate processing chambers. Therefore, this technology should not be construed as being limited only to the etching-based processing described. Before describing the operation of systems and methods, or exemplary processing sequences, according to several embodiments of this technology, this disclosure describes one of the systems and chambers applicable to this technology. It will be understood that this technology is not limited to the described apparatus, and the described process can be performed in any number of processing chambers and systems. [Brief explanation of the drawing] 【0010】 [Figure 1] A schematic cross-sectional view of an example of a processing chamber is shown. [Figure 2] A schematic diagram of an example of a heat transfer loop in a plasma-based processing system is shown. [Figure 3] A schematic cross-sectional view of an example of a foreline equipped with a regenerating heater shell is shown. [Figure 4] Figure 3 is a cross-sectional view along line AA of an example of a regenerated foreline. [Figure 5] This is a flowchart illustrating an example of the process for heating the foreline. 【0011】 Similar reference numbers and designations in various drawings refer to the same elements. Detailed explanation 【0012】 This specification describes a technique for heating a foreline component of a plasma-based processing system using excess heat from a plasma processing chamber. The foreline is connected to one or more vacuum components of the plasma-based processing system and is used to discharge gases and by-products from the processing chamber. At least a portion of the foreline is surrounded by a regenerator shell. The hot heat transfer fluid discharged from the processing chamber circulates within the regenerator shell, heating the foreline. This heating prevents processing by-products from adhering to the inner walls of the foreline. 【0013】 Figure 1 shows a schematic cross-sectional view of an example of a processing chamber 100 suitable for etching one or more material layers placed on a substrate 103 (also referred to as a "wafer") within a processing chamber 100 (e.g., a plasma processing chamber). The processing chamber 100 comprises a chamber body 105 defining a chamber volume 101 capable of processing the substrate. The chamber body 105 has side walls 112 and a bottom 118 connected to ground 126. The side walls 112 may include a liner 115 to protect the side walls 112 and extend the maintenance cycle interval of the plasma processing chamber 100. The chamber body 105 supports a chamber lid 110 enclosing the chamber volume 101. The chamber body 105 can be manufactured from, for example, aluminum or other suitable material. A substrate access port 113 is formed through the side wall 112 of the chamber body 105, thereby facilitating the insertion and removal of the substrate 103 into and from the plasma processing chamber 100. The access port 113 can be connected to the transport chamber and / or other chambers (not shown) of the substrate processing system, for example, to perform other processing on the substrate. A pumping port 145 is formed through the bottom 118 of the chamber body 105 and connected to the chamber volume 101. A pumping device is connected to the chamber volume 101 via the pumping port 145 to perform vacuuming and pressure control within the processing volume. The pumping device may include one or more vacuum pumps and throttle valves to discharge gas and processing by-products to a foreline vent. 【0014】 The chamber volume 101 includes a processing area 107 (e.g., a station for processing a substrate). A substrate support 135 can be placed in the processing area 107 of the chamber volume 101 to support the substrate 103 during processing. The substrate support 135 may include an electrostatic chuck 122 for holding the substrate 103 during processing. The electrostatic chuck ("ESC") 122 can hold the substrate 103 to the substrate support 135 by utilizing electrostatic attraction. The ESC 122 can be powered by a high-frequency ("RF") power supply 125 integrated with a matching circuit 124. The ESC 122 may include an electrode 121 embedded in a dielectric. The electrode 121 is connected to the RF power supply 125 and can provide a bias to attract plasma ions generated from the processing gas in the chamber volume 101 to the ESC 122 and the substrate 103 placed on the pedestal. The RF power supply 125 can be driven on / off, i.e., pulsed, during the processing of the substrate 103. The ESC122 may have an isolator 128 to prevent the sidewalls of the ESC122 from attracting plasma, thereby extending the maintenance life of the ESC122. Furthermore, the substrate support 135 may have a cathode dryer 136 to protect the sidewalls of the substrate support 135 from plasma gas, thereby extending the maintenance interval of the plasma processing chamber 100. 【0015】 The electrode 121 can be coupled to a DC power supply 150. The power supply 150 can supply a chucking voltage of approximately 200 volts to approximately 2000 volts to the electrode 121. The power supply 150 also includes a system controller that can control the operation of the electrode 121 by supplying DC current to the electrode 121 for chucking and dechucking the substrate 103. The ESC 122 may include a heater located within the ESC 122 and connected to a power supply for heating the substrate. The cooling base 129 supporting the ESC 122 may include conduits for circulating heat transfer fluid to maintain the temperature of the ESC 122 and the substrate 103 placed on top of it. The ESC 122 may be configured to operate within a temperature range required by the thermal budget of the device being manufactured on the substrate 103. For example, the ESC 122 may be configured to maintain the substrate 103 at a temperature from approximately -150°C or below to approximately 500°C or above, depending on the process being performed. The covering 130 may be placed on the ESC 122 and around the substrate support 135. The covering 130 can be configured to confine etching gas to a desired portion of the exposed upper surface of the substrate 103, while also shielding the upper surface of the substrate support 135 from the plasma environment within the plasma processing chamber 100. 【0016】 A gas panel 160 (for example, referred to herein as a “gas distribution manifold”) is connected to the chamber body 105 via a chamber lid 110 by a gas line 167 and can supply a process gas into the chamber volume 101. The gas panel 160 may include one or more process gas sources 161, 162, 163, 164 and may further include any number of inert gases, non-reactive gases, and reactive gases that can be used for suitable processes. Examples of process gases that can be supplied by the gas panel 160 may include, but are not limited to, hydrocarbon-containing gases including methane, sulfur hexafluoride, silicon chloride, silicon tetrachloride, carbon tetrafluoride, and hydrogen bromide. Process gases that can be supplied by the gas panel may include, but are not limited to, argon gas, chlorine gas, nitrogen, helium, or oxygen gas, sulfur dioxide, and any number of additional substances. Furthermore, the process gas may include nitrogen, chlorine, fluorine, oxygen, or hydrogen-containing gases (e.g., BCl3, C2F4, C4F8, C4F6, CHF3, CH2F2, CH3F, NF3, NH3, CO2, SO2, CO, N2, NO2, N2O, H2, etc.) as well as any number of suitable precursors. One or more etching gas mixtures can be produced by combining process gases from process gas sources (e.g., gas sources 161, 162, 163, 164). For example, gas panel 160 includes one or more process gas sources specific to oxide-based etching chemical reactions. In another example, gas panel 160 includes one or more process gas sources specific to nitride-based etching chemical reactions. 【0017】 The gas panel 160 includes various valves and other components for controlling the flow rate of process gas from the gas sources. Valve 166 can control the flow rate of process gas from gas sources 161, 162, 163, and 164 of the gas panel 160. The operation of the valves, pressure regulators, and / or mass flow controllers can be controlled by controller 165. Controller 165 is operably connected to an electric valve (EV) manifold (not shown) and can control the operation of one or more valves, pressure regulators, and / or mass flow controllers. 【0018】 The lid 110 can incorporate a gas supply nozzle 114. The gas supply nozzle 114 may include one or more openings for introducing the processing gas from the gas panel 160's supply sources 161, 162, 163, and 164 into the chamber volume 101. After the processing gas is introduced into the plasma processing chamber 100, energy can be supplied to the gas to form a plasma. Adjacent to the plasma processing chamber 100, an antenna 148 (e.g., one or more inductor coils) may be provided. The antenna power supply 142 supplies power to the antenna 148 via a matching circuit 141, inductively coupling energy (e.g., RF energy) to the processing gas and maintaining the plasma formed from the processing gas in the chamber volume 101 of the plasma processing chamber 100. The operation of the power supply 142 can be controlled by a controller (e.g., controller 165). The controller 165 also controls the operation of other components within the plasma processing chamber 100. 【0019】 Figure 1 shows an inductively coupled plasma source, but the general chamber and foreline described below can also be used with other types of plasma sources, including capacitively coupled plasma sources. 【0020】 The controller 165 can be used to control the process sequence, adjust the gas flow rate from the gas panel 160 to the plasma processing chamber 100, and control other process parameters. When the software routine is executed by a computing device having one or more processors (e.g., a central processing unit (CPU)) capable of data communication with one or more memory storage devices, it can transform the computing device into an application-specific computer such as a controller and control the plasma processing chamber 100 to execute the process in accordance with this disclosure. The software routine can also be stored and / or executed by one or more other controllers that can be associated with the plasma processing chamber 100. 【0021】 In some embodiments, at the end of the wafer etching process, an automated or semi-automated robotic manipulator (not shown) can be used to transport the wafer from the substrate support out of the process chamber (e.g., via the substrate access port 113). For example, the robotic manipulator can transport the wafer to another chamber (or another location) to perform other steps of the manufacturing process. 【0022】 In Figure 1, a process chamber is described as including substrate supports arranged within processing areas within a chamber volume. However, two or more substrate supports can also be arranged within each processing area (e.g., each processing station) within the same chamber volume. For example, processing chamber 100 can be a tandem processing chamber including two processing areas, each equipped with a substrate support configured to hold each wafer during etching. Processing chamber 100 can include two or more processing areas within a chamber volume 101, facilitating parallel processing of two or more substrates in each processing area. These processing areas can be substantially separated so that etching in the first processing area has minimal impact on etching in the second processing area, and vice versa. The tandem processing chamber can include two independent forelines, one in each processing area. Each foreline can include a foreline regeneration device. 【0023】 Figure 2 shows a schematic diagram of an example of a heat transfer loop 200 in a plasma processing system. This heat transfer loop includes an inlet path 201 and an outlet path 203 for the heat transfer fluid. 【0024】 The heat transfer fluid inlet path 201 begins with a fluid line 205 that carries the heat transfer fluid flowing out of the heat exchanger 202. In some embodiments, the heat transfer fluid flowing out of the heat exchanger 202 has a temperature corresponding to a predetermined temperature in the processing chamber. The temperature of the heat transfer fluid can be, for example, 65°C or 90°C. 【0025】 The heat exchanger 202 receives a heat transfer fluid at an input port and outputs a heat transfer fluid at a specific temperature from an output port connected to the fluid line 205. The heat exchanger 202 may be, for example, a chamber that passes heat between the heat transfer fluid and another heat transfer fluid within the heat exchanger 202 without the two fluids directly contacting each other. For example, the chamber can have a path that carries the heat transfer fluid from the input port to the output port. This path may be a coil, a zigzag, or other path that lengthens the path through which the heat transfer fluid passes within the chamber. Also, the chamber can include a second heat transfer fluid that circulates around and within the chamber. Through heat exchange, the desired output temperature of the heat transfer fluid is achieved. 【0026】 The fluid line 205 is coupled, for example, to an equipment box 204 for a plasma processing system. The equipment box 204 provides a manifold for connecting components of the plasma processing system to external components. Thus, for example, the equipment box 204 enables coupling of the fluid line 205 to the plasma processing system. In some alternative embodiments, by integrating the heat exchanger within the plasma processing system, the equipment box 204 for coupling the fluid line to the heat exchanger is not required. 【0027】 The fluid line 207 exits the equipment box 204 and flows into the processing chamber 206. The processing chamber 206 can have a configuration similar to, for example, the processing chamber 100 of FIG. 1. In some embodiments, the processing chamber is heated by the heat transfer fluid and maintains a specific chamber temperature, such as 65° C or 90° C. 【0028】 The fluid output path 203 begins where the heat transfer fluid exits the processing chamber 206 and enters the fluid line 209. The fluid line 209 connects the processing chamber 206 to the input of the foreline regenerator shown within the box 208. The foreline includes a regenerator shell that at least partially surrounds the foreline, such that the heat transfer fluid entering the foreline fills the space between the regenerator shell and the outer surface of the foreline. The fluid line 209, and additionally other fluid lines, can be insulated to reduce heat loss over the distance from the processing chamber 206 to the foreline regenerator. Since the losses over short distances are negligibly small, the temperature of the heat transfer fluid entering the foreline regenerator is substantially the same as the temperature of the heat transfer fluid exiting the processing chamber 206. Thus, when the temperature of the processing chamber is held constant, the temperature of the heat transfer fluid also remains constant. 【0029】 The foreline is connected as part of the vacuum components of the plasma processing system to a flow valve 210 and a turbomolecular pump (referred to herein as a turbo pump) 212. The flow valve 210 and the turbo pump 212 provide an input to the foreline when providing exhaust from the processing chamber 206. Further, the foreline includes an output vent for discharging the exhausted gas and processing by-products. The vacuum components are further described with reference to FIG. 3. The output vent can be connected to one or more other external systems that process the exhaust, for example, to remove by-products and recover certain processing gases. 【0030】 The heat transfer fluid is discharged from the regenerator into the fluid line 211. The fluid line 211 couples the foreline regenerator to the equipment box 204. The fluid line 213 couples the equipment box 204 to the input of the heat exchanger 202, completing the heat transfer loop as, for example, a closed loop system. 【0031】 FIG. 3 shows a schematic cross-sectional view 300 of an example of a foreline with a regenerative heater. In particular, the cross-sectional view 300 represents an enlarged view of the components within the box 208 of FIG. 2. 【0032】 The regenerative foreline 302 includes a regenerator shell 304 and a foreline 306. The foreline 306 is connected to a first shut-off valve 308 and a second shut-off valve 310. The first shut-off valve 308 is connected to a flow valve 210. The second shut-off valve 310 is connected to a turbopump 212. Furthermore, the foreline 306 is connected to an exhaust port 312. In some embodiments, the process gas from the plasma processing chamber can be recovered from the exhaust. In some embodiments, the foreline 306 is made of stainless steel. For example, the foreline can be made of SST316L, a special alloy of stainless steel containing molybdenum and having excellent corrosion resistance. 【0033】 During operation of the plasma processing chamber (e.g., plasma processing chamber 206), a vacuum is formed within the processing chamber. Based on the required vacuum level, a multi-stage process can be used to create the vacuum. For example, an initial roughing pump can be used to bring the processing chamber to a first pressure level, and the pressure can be reduced to, for example, substantially 100 mTorr. The first vacuum level generated by the roughing pump bypasses the turbopump 212 and is sent to the foreline 306 via the first shut-off valve 308. During the roughing process, the first shut-off valve 308 can be open and the second shut-off valve 310 can be closed. In some embodiments, the flow valve 210 is a symmetrical flow valve, providing high throughput while reducing choke flow between the processing chamber and the vacuum pump. 【0034】 A second vacuum stage to achieve a higher vacuum level can be performed by the turbopump 212. During the second vacuum stage, the first shut-off valve 308 can be closed and the second shut-off valve 310 can be opened. Gas molecules from the processing chamber pass through the flow valve 210 and are output to the foreline 306 via the second shut-off valve 310 by the turbopump 212. 【0035】 After creating a vacuum at a predetermined pressure, the turbopump 212 maintains the pressure within the processing chamber. As described above, the plasma processing chamber allows for processing operations on the substrate using plasma. A specific processing gas is introduced into the chamber. By-products of the introduced processing gas are discharged via the foreline 306 by the turbopump 212. This maintains the pressure within the processing chamber at a predetermined pressure and prevents additional processing by-products from interfering with the plasma processing operation. 【0036】 Specific processing operations can be configured to match the set temperature in the processing chamber (e.g., 65°C or 90°C). To maintain the desired temperature, the chamber body of the processing chamber includes a fluid path through which a heat transfer fluid continuously circulates to remove excess heat generated by the plasma processing, for example. The heat transfer fluid can be selected according to specific performance parameters such as operational capability and chemical stability within a particular temperature range. The heat transfer fluid may be a fluorinated fluid such as a perfluoropolyether containing, for example, Galden™ PFPE. 【0037】 If the foreline 306 is not heated, byproducts in the high-temperature exhaust passing through the foreline may cool and adhere to the inner surface of the foreline 306. Therefore, the foreline 306 is heated to prevent byproducts from adhering to the inner surface of the foreline 306. 【0038】 The regenerator shell 304 surrounds the side wall of the foreline 306. The regenerator shell 304 provides a space between the outer surface of the foreline side wall and the regenerator shell 304. The input port 316 supplies high-temperature heat transfer fluid from the processing chamber to fill the space between the outer surface of the foreline side wall and the regenerator shell 304. The heat transfer fluid entering the regenerator shell 304 may be substantially equal to the temperature of the processing chamber, for example, 65°C or 90°C. 【0039】 Figure 4 shows a cross-sectional view 400 along line AA of the regenerative foreline 302 shown in Figure 3. As shown in the cross-sectional view 400, the regenerator shell 304 surrounds the foreline 306. Exhaust gas 402 passes through the foreline 306 toward the exhaust port. The heat transfer fluid 404 heats the foreline by filling the space between the foreline 306 and the regenerator shell 304. 【0040】 The high-temperature heat transfer fluid fills the space formed by the regenerator shell 304 until it reaches the output port 318. The heat transfer fluid output from the regenerator shell proceeds to the heat exchanger and is then looped back into the processing chamber, for example, as shown in Figure 2. 【0041】 In the example regenerator shell shown in Figure 3, the input port 316 is located near the second shut-off valve 310. However, the input port 316 could also be located in another location (for example, near the exhaust port 312). The output port 318 is located near the first shut-off valve 308, so that the entire shell is filled with heat transfer fluid. However, in some embodiments, the output port could also be located in another location. 【0042】 The regenerator shell 304 can be single-layer or multi-layer. For example, the inner layer of the regenerator shell 304 can be metal surrounded by an insulating layer to maintain heating of the foreline 306. In some embodiments, the inner layer is made of stainless steel. Alternatively, in the case of a single-layer shell, the entire shell can be made of stainless steel. Similar to the foreline, the regenerator shell can be formed from certain stainless steel alloys such as SST316. 【0043】 In some alternative embodiments, the regenerator shell 304 may include an insulated outer shell layer and a coiled inner tube surrounding the foreline. A heat transfer fluid flows from the input port through the coil to the output port, and the coil is heated by the fluid. The heat is then conducted to the foreline. 【0044】 Figure 5 is a flow chart of an example of process 500 for heating a foreline. For convenience, process 500 is described in relation to the system that performs process 500 (e.g., a cooling and heating system for a plasma-based processing system). 【0045】 The system draws a high-temperature heat transfer fluid from a plasma processing chamber (502). The plasma processing chamber can be maintained at a specific temperature, such as 65°C or 90°C. A fluid line can supply the heat transfer fluid to the plasma processing chamber. For example, the side walls of the processing chamber can be provided with fluid paths that allow the heat transfer fluid to absorb excess heat from the plasma processing chamber as it passes through the fluid path. The heat transfer fluid is then output from the plasma processing chamber. 【0046】 The system supplies a high-temperature heat transfer fluid to the regenerator shell to heat the foreline (504). The heat transfer fluid fills at least a portion of the space surrounding the foreline, thus heating the foreline. Heating the foreline prevents processing by-products present in the vacuum exhaust from adhering to the inner wall of the foreline. The high-temperature heat transfer fluid can be introduced into the regenerator shell from a low position relative to the ground and discharged from a high position. This causes the heat transfer fluid to rise towards the output section and surround the foreline. 【0047】 Since the processing chamber is maintained at a specific temperature, the temperature of the heat transfer fluid flowing out is generally known and constant. The use of insulated fluid lines reduces heat loss between the processing chamber and the regenerator shell, resulting in a constant temperature for the heat transfer fluid supplied to the regenerator shell. As a result, because the temperature of the supplied heat transfer fluid is known and constant, temperature monitoring and adjustment of the regenerator shell become unnecessary. 【0048】 The system outputs a heat transfer fluid from the regenerator shell and directs it to a heat exchanger (506). The heat exchanger transfers heat, thereby giving the heat transfer fluid discharged from the heat exchanger a predetermined temperature for loopback to the processing chamber temperature. One or more intermediate components can be placed between the regenerator shell and the heat exchanger. For example, an equipment connection point can function as a connection point between a component within the plasma processing system and an external component (e.g., an external heat exchanger). 【0049】 The system supplies heat transfer fluid from the heat exchanger to the plasma processing chamber (508). The heat transfer fluid discharged from the heat exchanger is returned to the plasma processing chamber, completing the heat transfer loop. Here again, the heat transfer fluid may pass through one or more intermediate components (e.g., equipment connection points) before reaching the heat transfer fluid inlet of the plasma processing chamber. 【0050】 This specification contains many specific details, but these should not be interpreted as limiting the claims as defined by the claims themselves, but rather as descriptions of features specific to particular embodiments of a particular invention. Certain features described herein in the context of separate embodiments may also be implemented in combination in a single embodiment. Conversely, various features described in the context of a single embodiment may also be implemented separately in multiple embodiments or in any suitable subcombination. Furthermore, even if features are described above as functioning in a particular combination and are initially claimed as such, one or more features from the claimed combination may be removed from the combination, and the claims may cover subcombinations or variations of subcombinations. 【0051】 Similarly, while operations are described in a specific order in the drawings and claims, this should not be understood as requiring that such operations be performed in a specific illustrated order or sequence, or that all illustrated operations be performed, in order to obtain the desired results. In certain circumstances, multitasking and parallel processing may be advantageous. Furthermore, the separation of various system modules and components in embodiments should not be understood as requiring such separation in all embodiments, and it should be understood that the described program components and systems can generally be integrated into a single software product or packaged into multiple software products. 【0052】 Specific embodiments of the subject matter have been described. Other embodiments are also included within the scope of the following claims. For example, the operations described in the claims can be performed in a different order to obtain the desired results. As an example, the processes shown in the accompanying drawings do not necessarily require the specific illustrated order, i.e., a sequential order, to obtain the desired results. In some cases, multitasking and parallel processing may be advantageous.

Claims

[Claim 1] It is a system, A plasma-based processing chamber comprising one or more fluid paths configured to circulate a heat transfer fluid, A vacuum system comprising one or more vacuum pumps and a foreline vent, configured to discharge a process gas from a processing chamber. It is a foreline regenerator, A system comprising a foreline regenerator, a regenerator shell that at least partially encloses a foreline vent, and which includes a heat transfer fluid input section and a heat transfer fluid output section, the heat transfer fluid input section being coupled to the output section of a processing chamber. [Claim 2] The system according to claim 1, wherein the regenerator shell provides a gap between the inner surface of the regenerator shell and the outer surface of the foreline. [Claim 3] The system according to claim 2, wherein the input of heat transfer fluid to the heat transfer fluid input section fills the space between the inner surface of the regenerator shell and the outer surface of the foreline, and the space between the heat transfer fluid input section and the heat transfer fluid output section. [Claim 4] The system according to claim 1, wherein the foreline comprises a first exhaust branch coupled to a roughing vacuum pump, a second exhaust branch coupled to a turbopump, and vents coupled to the first and second exhaust branches, the heat transfer fluid input section is located near the second exhaust branch, and the heat transfer fluid output section is located near the first exhaust branch. [Claim 5] The system according to claim 1, further comprising an adiabatic fluid line connecting the heat transfer fluid output section of the processing chamber and the heat transfer fluid input section of the regenerator shell. [Claim 6] The system according to claim 1, comprising one or more fluid lines connecting the heat transfer fluid output section of a regenerator shell to a heat exchanger, and one or more fluid lines connecting the heat exchanger to the input section of a processing chamber, wherein the combination of fluid lines completes a heat transfer loop. [Claim 7] The system according to claim 1, wherein the foreline regenerator includes a coiled fluid path connecting a heat transfer fluid input section and a heat transfer fluid output section, the coiled fluid path being located in the space between the regenerator shell and the foreline. [Claim 8] It is a foreline regenerator, A shell enclosing at least a portion of a foreline vent of a plasma-based processing system, the shell configured to provide a gap between the outer surface of the foreline vent and the inner surface of the shell, A heat transfer fluid input port configured to receive and input heat transfer fluid into a space, A foreline regenerator equipped with a heat transfer fluid output port configured to output heat transfer fluid from a gap. [Claim 9] The foreline regenerator according to claim 8, wherein the heat transfer fluid input to the heat transfer fluid input port fills the space between the inner surface of the regenerator shell and the outer surface of the foreline, and the space between the heat transfer fluid input port and the heat transfer fluid output port. [Claim 10] The foreline regenerator according to claim 8, which heats the foreline to a substantially constant temperature of 65°C during operation. [Claim 11] The foreline regenerator according to claim 8, wherein the heat transfer fluid input port is positioned relative to a portion of the foreline vent adjacent to the exhaust port of the turbomolecular vacuum pump. [Claim 12] The foreline regenerator according to claim 11, wherein the heat transfer fluid output port is positioned relative to a portion of the foreline vent adjacent to the exhaust port of the roughing pump. [Claim 13] The foreline regenerator according to claim 8, wherein the regenerator shell comprises an inner layer and an outer insulating layer formed of stainless steel. [Claim 14] The foreline regenerator according to claim 8, wherein the spacing includes a coiled fluid path surrounding the foreline vent and connects a heat transfer fluid input port and a heat transfer fluid output port. [Claim 15] A method for heating a foreline component, A process of receiving the heat transfer fluid output from the plasma-based substrate processing chamber at the input port of the regenerator, A process for heating a foreline component by flowing a heat transfer fluid between the input port and output port of a regenerator, comprising passing the heat transfer fluid from the input port to the regenerator shell, wherein the regenerator shell comprises a shell that at least partially encloses the foreline component, and the shell provides a fluid path within the gap between the outer surface of the foreline component and the inner surface of the shell, A method comprising the step of outputting a heat transfer fluid from the output port of a regenerator. [Claim 16] The method according to claim 15, wherein receiving a heat transfer fluid output from a plasma-based substrate processing chamber includes passing the heat transfer fluid through an adiabatic fluid line from the processing chamber to the input port of a regenerator. [Claim 17] The method according to claim 15, wherein a foreline component is heated to substantially 65°C by flowing a heat transfer fluid between the input port and output port of the regenerator. [Claim 18] The method according to claim 15, further comprising the steps of coupling the output port of a regenerator to a heat exchanger, the heat exchanger to the input of a plasma-based substrate processing chamber, and circulating a heat transfer fluid in a closed loop between the processing chamber, the regenerator, and the heat exchanger. [Claim 19] The method according to claim 15, wherein the heat transfer fluid output from the processing chamber has a constant temperature, thereby heating the foreline to a constant temperature. [Claim 20] The method according to claim 15, wherein the flow of the heat transfer fluid between the input port and output port of the regenerator includes inputting the heat transfer fluid at a lower point in the regenerator relative to the ground and outputting the heat transfer fluid at a higher point in the regenerator relative to the ground.

Images