Semiconductor device and its manufacturing method

By integrating a guard ring portion with narrower guard ring column regions connected to the guard rings in semiconductor devices, the challenge of maintaining high voltage resistance despite increased impurity concentration in the drift layer is addressed, ensuring effective voltage withstand.

JP7647452B2Active Publication Date: 2025-03-18DENSO CORP +2
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Patent Information

Application Number
JP2021141924
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2021-08-31
Publication Date
2025-03-18
Estimated Expiration
2041-08-31

AI Technical Summary

Technical Problem

Increasing the impurity concentration in the drift layer of semiconductor devices to reduce on-resistance can lead to a decrease in the breakdown voltage of the guard ring portion, compromising the device's voltage resistance.

Method used

The semiconductor device incorporates a guard ring portion with a frame-shaped guard ring surrounding the cell region, featuring a plurality of second conductivity type guard rings formed in the surface portion of the drift layer. The guard ring column regions have a narrower width than the guard rings and are connected to them, enhancing the voltage withstand capability.

Benefits of technology

This configuration effectively improves the voltage withstand of the guard ring portion, preventing a significant decrease in breakdown voltage even when the impurity concentration in the drift layer is increased, thus maintaining the device's resistance to high voltages.

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Abstract

To provide a semiconductor device capable of suppressing an excessive decrease in breakdown voltage.SOLUTION: An outer peripheral region RO is configured to include a guard ring part RG having a plurality of guard rings 21 of a second conductivity-type, each of the plurality of guard rings is disposed in a surface layer portion of a drift layer 2 and has a frame shape surrounding a cell region. A plurality of guard ring column regions 22 of the second conductivity-type are formed at each of the guard rings 21 so as to be extended from the guard rings 21 toward a substrate 1 side. Each of the guard ring column regions has a width smaller than a width of each of the guard rings 21 in a direction along a planar direction of the substrate 1 in a predetermined cross-section in a direction from the cell region RC to the outer peripheral region RO.SELECTED DRAWING: Figure 2
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