Resin coating method and resin coating device

By adopting a silicone coating method that includes thickness measurement steps in the chip manufacturing process, the problem of difficulty in measuring and adjusting the thickness of the silicone layer is solved, and the protection of the chip surface structure and the uniformity of the silicone layer are achieved.

JP7650594B2Active Publication Date: 2025-03-25DISCO CORP
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Patent Information

Application Number
JP2021093688
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2021-06-03
Publication Date
2025-03-25
Estimated Expiration
2041-06-03

AI Technical Summary

Technical Problem

When making chips, it is difficult for the prior art to effectively measure and adjust the thickness of the silicone layer to avoid damage to the concave and convex structures on the surface of the chip, such as electrode patterns and fluctuations.

Method used

Using a silicone coating method that includes thickness measurement steps, the thickness of the silicone layer is accurately measured through a moving measuring instrument and a rotating temporary storage table, and the parameters of the silicone coating equipment are adjusted according to the measurement results.

Benefits of technology

Accurate measurement and adjustment of the thickness of the silicone layer is achieved, which reduces damage to the chip surface structure and ensures the uniformity and stability of the silicone layer.

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Abstract

To appropriately measure a thickness of a wafer for suppressing variations in thickness of a resin layer coating a surface of the wafer without being affected by a type of the wafer.SOLUTION: A temporary placement table for holding a wafer, a first measuring instrument, and a second measuring instrument are relatively moved along a direction parallel to a holding surface of the temporary placement table. In this case, after measurement results of the first or second measuring instrument are referenced and a coordinate of a point on an outer peripheral edge of the wafer is detected, a thickness of the wafer at a measured point adjacent to a center of the wafer by a prescribed distance from this point can be measured. This makes it possible to properly measure the thickness of a wafer for suppressing variations in thickness of a resin layer coating the surface of the wafer by setting the prescribed distance according to a type of the wafer.SELECTED DRAWING: Figure 10
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