Indication device

Abstract

To provide a semiconductor device with low wiring resistance, a semiconductor device with high transmittance, or a semiconductor device with a high opening ratio, display device, a light-emitting device and a method for manufacturing the same.SOLUTION: In a transistor 152 of a semiconductor device, a gate electrode 132, a semiconductor layer 112a, and a source electrode or drain electrodes 136, 138 are formed of a material with a light-transmitting property. A conductive layer such as a gate wire 104a or a source wire 126 is formed of a material with lower resistivity than that of the material with a light-transmitting property. The source wire and / or the gate wire provided in a stacking structure of the conductive layer 108a and the conductive layer 110a is formed by stacking the material with a light-transmitting property and the material with lower resistivity than that of the material with a light-transmitting property. Thus, the semiconductor device with low wiring resistance and high transmittance can be provided.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device, a display device, a light-emitting device, or a method for manufacturing the same. A semiconductor device having a circuit configured with thin film transistors using an oxide semiconductor film in a panel formation region. The present invention relates to a body device and a method for making the same. [Background technology]

[0002] Currently, amorphous silicon is used as a switching element in display devices, such as liquid crystal display devices. Thin film transistors (TFTs) that use silicon layers such as silicon as the channel layer are widely used. Thin film transistors using amorphous silicon have low field effect mobility. This has the advantage that it can accommodate the increase in the area of ​​the glass substrate.

[0003] Recently, thin film transistors have been fabricated using metal oxides that exhibit semiconducting properties, and electronic devices have been developed. For example, among metal oxides, the technology for applying it to electronic devices and optical devices is attracting attention. It is known that tungsten oxide, tin oxide, indium oxide, zinc oxide, etc. exhibit semiconductor properties. A thin film transistor in which a transparent semiconductor layer made of such a metal oxide is used as a channel forming region is used. A transistor is disclosed in Patent Document 1.

[0004] In addition, a channel layer of the transistor is formed using a light-transmitting oxide semiconductor layer. The gate electrode, source electrode, and drain electrode are also formed of a transparent conductive film having light-transmitting properties. Therefore, techniques for improving the aperture ratio are being studied (Patent Document 2).

[0005] By improving the aperture ratio, the light utilization efficiency is improved, and the power consumption and size of the display device are reduced. On the other hand, from the viewpoint of increasing the size of display devices and application to mobile devices, Therefore, there is a demand for further reduction in power consumption along with an improvement in aperture ratio.

[0006] As a method for wiring metal auxiliary wiring to the transparent electrodes of the electro-optical element, In either case, the metal auxiliary wiring and the transparent electrode are wired so that they overlap to provide electrical continuity with the transparent electrode. It is known that such a method is used (see, for example, Patent Document 3).

[0007] The additional capacitance electrodes provided on the active matrix substrate are made of transparent material such as ITO or SnO2. The electrode is made of a conductive film, and in order to reduce the electrical resistance of the electrode for the additional capacitance, it is made of a metal film. A configuration in which an auxiliary wiring is provided in contact with an electrode for additional capacitance is known (see, for example, Patent Document 4). ).

[0008] In a field-effect transistor using an amorphous oxide semiconductor film, The source and drain electrodes were made of indium tin oxide (ITO), indium Transparent electrodes such as zinc oxide, ZnO, SnO2, and Al, Ag, Cr, Ni, Mo, Au Metal electrodes such as Ti, Ta, or alloy metal electrodes containing these can be used. It is known that stacking two or more layers of these materials can reduce contact resistance and improve interface strength. (See, for example, Patent Document 5).

[0009] In addition, the source electrode, drain electrode and The materials for the gate electrode and auxiliary capacitance electrode are indium (In), aluminum (Al), and gold ( Metals such as Au, silver (Ag), indium oxide (In2O3), and tin oxide (SnO2) , zinc oxide (ZnO), cadmium oxide (CdO), cadmium indium oxide (CdI n2O4), cadmium tin oxide (Cd2SnO4), zinc tin oxide (Zn2SnO4) The gate electrode, source electrode, and drain electrode can be made of oxide materials such as It is known that all of the components may be the same or different (see, for example, Patent Documents 6 and 7). ). [Prior art documents] [Patent documents]

[0010] [Patent Document 1] Japanese Patent Application Laid-Open No. 2004-103957 [Patent Document 2] Japanese Patent Application Laid-Open No. 2007-81362 [Patent Document 3] Japanese Patent Application Publication No. 2-82221 [Patent Document 4] Japanese Patent Application Publication No. 2-310536 [Patent Document 5] Japanese Patent Application Laid-Open No. 2008-243928 [Patent Document 6] Japanese Patent Application Laid-Open No. 2007-109918 [Patent Document 7] Japanese Patent Application Laid-Open No. 2007-115807 Summary of the Invention [Problem to be solved by the invention]

[0011] An object of one embodiment of the present invention is to provide a semiconductor device with low wiring resistance. An object of one embodiment of the present invention is to provide a semiconductor device with high transmittance. An object of one embodiment of the present invention is to provide a semiconductor device with a high aperture ratio. Another object of one embodiment of the present invention is to provide a semiconductor device with low power consumption. The present invention aims to provide a semiconductor device that supplies an accurate voltage. An object of one embodiment of the present invention is to provide a semiconductor device in which a voltage drop is reduced. An object of one embodiment of the present invention is to provide a semiconductor device with improved display quality. An object of one embodiment of the present invention is to provide a semiconductor device with reduced contact resistance. Another object of one embodiment of the present invention is to provide a semiconductor device with reduced flicker. Another object of one embodiment of the present invention is to provide a semiconductor device with low off-state current. The description of these problems does not preclude the existence of other problems. It is understood that an embodiment does not necessarily solve all of the above problems. [Means for solving the problem]

[0012] In order to solve the above problems, one embodiment of the present invention is a gate electrode, a semiconductor layer, a source electrode, or The drain electrode is formed using a light-transmitting material, and is connected to wiring such as a gate wiring or a source wiring. The wires are made of a material having a lower resistivity than the light-transmitting material.

[0013] In addition, one embodiment of the present invention is a semiconductor device including a first electrode formed using a first light-transmitting conductive layer and a first a first conductive layer and a second conductive layer having a lower resistance than the first conductive layer; a first wiring provided in a laminated structure of the above, and an insulating layer provided on the first electrode and the first wiring; a second electrode formed on the insulating layer and using a third conductive layer having light-transmitting properties; a third conductive layer and a fourth conductive layer having a lower resistance than the third conductive layer; a second wiring provided with a laminated structure of the fifth conductive layer having a light-transmitting property; an electrode provided on the insulating layer so as to overlap the first electrode, and a second electrode and a third electrode; A semiconductor device is provided that has a semiconductor layer provided on an electrode.

[0014] In addition, one embodiment of the present invention is a semiconductor device including a first electrode formed using a first light-transmitting conductive layer and a first a first conductive layer and a second conductive layer having a lower resistance than the first conductive layer; a first wiring provided in a laminated structure of the first conductive layer and a second wiring provided in a third conductive layer having a light-transmitting property; wiring, a first electrode, an insulating layer provided on the first wiring and the second wiring, and a a second electrode formed of a fourth conductive layer having light-transmitting properties; The fourth conductive layer and the fifth conductive layer having a lower resistance than the fourth conductive layer are laminated together. a third wiring formed on the first conductive layer, a third electrode formed on the second conductive layer, and a sixth conductive layer having light-transmitting properties; A seventh conductive layer having a light-transmitting property is provided on the line through an insulating layer, and a first electrode is provided on the insulating layer. and a semiconductor layer provided on the second electrode and the third electrode. The present invention provides a semiconductor device having the above structure.

[0015] The switch may take various forms, for example, an electrical switch. There are various types of switches, such as switches and mechanical switches. In other words, anything that can control the flow of current is sufficient. There is no particular limitation. For example, a transistor (e.g., a bipolar transistor) can be used as a switch. transistors, MOS transistors, etc.), diodes (e.g., PN diodes, P IN diode, Schottky diode, MIM (Metal Insulator Metal diode, MIS (Metal Insulator Semiconductor) diodes, diode-connected transistors, etc. Alternatively, a logic circuit that combines these can be used as a switch.

[0016] Examples of mechanical switches include digital micromirror devices (DMDs), There are switches that use MEMS (microelectromechanical systems) technology. The switch has an electrode that can be moved mechanically, and the movement of the electrode The transistor operates by controlling conduction and non-conduction.

[0017] When a transistor is used as a switch, the transistor acts as a simple switch. However, the polarity (conductivity type) of the transistor is not particularly limited. To suppress this, it is desirable to use a transistor with a polarity that reduces the off-state current. As a transistor with low current, a transistor with LDD region or a multi-gate structure There are transistors with a structure such as a switch. The potential of the source terminal operates at a value close to the potential of the low-potential power supply (Vss, GND, 0V, etc.). On the other hand, if the potential of the source terminal is However, when it operates at a potential close to the high-potential power supply (such as Vdd), it is a P-channel transistor. It is desirable to use an N-channel transistor because the source terminal is low. When operating at a potential close to that of the power supply, the source terminal of a P-channel transistor When operating at a potential close to that of the high-potential power supply, the absolute value of the voltage between the gate and source is large. This is because the switch can operate more accurately. , the transistor rarely operates as a source follower, so the output voltage This is because it is unlikely that

[0018] In addition, CMOS transistors are used to implement both N-channel and P-channel transistors. A CMOS switch can be used as the switch. Either the N-channel transistor or the N-channel transistor is conducting. If the input voltage to the switch is 0.05V, a current will flow, making it easier to function as a switch. Whether the signal voltage is high or low, the voltage can be output appropriately. Therefore, the voltage amplitude of the signal used to turn the switch on or off can be reduced. Therefore, power consumption can also be reduced.

[0019] When using a transistor as a switch, the switch must be connected to the input terminal (source terminal or the other of the source and drain terminals), the output terminal (the other of the source and drain terminals), and the The diode is used as a switch. In some cases, the switch may not have a terminal that controls conduction. Using diodes as switches rather than transistors reduces the amount of wiring required to control the terminals. It can be eliminated.

[0020] When it is explicitly stated that A and B are connected, it means that A and B are electrically connected. A and B are functionally connected, A and B are directly connected, Here, A and B are objects (e.g., devices, elements, circuits) , wiring, electrodes, terminals, conductive films, layers, etc.). Therefore, a predetermined connection relationship, For example, the present invention is not limited to the connection relationships shown in the drawings or text, but may be modified to include the connection relationships shown in the drawings or text. This also includes matters other than those in charge.

[0021] For example, if A and B are electrically connected, the electrical connection between A and B can be The elements to be considered (e.g., switches, transistors, capacitance elements, inductors, resistance elements, One or more electrodes (such as a diode) may be connected between A and B. Alternatively, A and B may In the case of functional connection, a circuit that allows the functional connection between A and B (e.g. , logic circuits (inverters, NAND circuits, NOR circuits, etc.), signal conversion circuits (DA conversion circuits circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (power supply circuits (boosting circuits, voltage sources, current sources, Switching circuits, amplifier circuits (circuits that can increase signal amplitude or current, etc.), operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, signal generation circuits, memory circuits, control One or more control circuits may be connected between A and B. For example, Even if there is another circuit between them, if the signal output from A is transmitted to B, then A and B are It is assumed that they are functionally connected.

[0022] In addition, when it is explicitly stated that A and B are electrically connected, it means that A and B are electrically When A and B are directly connected (i.e., when another element or circuit is placed between A and B), A and B are functionally connected (i.e., there is another When A and B are connected functionally across a circuit, and when A and B are connected directly ( (i.e., when A and B are connected without any other element or circuit between them) In other words, when explicitly stating that something is electrically connected, it simply means that it is connected. is the same as if it were expressly stated only that the

[0023] Note that the term "display element," "display device having a display element," "light-emitting element," and "device having a light-emitting element" may be used interchangeably. The light emitting device can have various forms and various elements. The display element, display device, light-emitting element or light-emitting device may be an EL (electroluminescence) EL elements (EL elements including organic and inorganic materials, organic EL elements, inorganic EL elements), LED (white LED, red LED, green LED, blue LED, etc.), transistor (depending on the current) transistors that emit light by electrons, electron-emitting devices, liquid crystal devices, electronic ink, electrophoretic devices, Lighting light bulbs (GLV), plasma displays (PDP), digital microphones mirror device (DMD), piezoelectric ceramic display, carbon nanotube, etc. A display medium whose contrast, brightness, reflectance, transmittance, etc. change due to electromagnetic effects. The display device using the EL element may be an EL display, A display device using electron-emitting elements is a field emission display (FED). and SED flat panel displays (SED: Surface-conduction E As a display device using liquid crystal elements, such as a LC-emitter display LCDs (transmissive LCDs, semi-transmissive LCDs, reflective LCDs) LCDs, direct-view LCDs, projection LCDs), electronic ink and An example of a display device using electrophoretic elements is electronic paper.

[0024] The EL element is an element having an anode, a cathode, and an EL layer sandwiched between the anode and the cathode. The EL layer is made up of a number of types, including those that utilize light emission (fluorescence) from singlet excitons, Those that utilize light emission from doublet excitons (phosphorescence) and those that utilize light emission from singlet excitons (fluorescence). Some utilize light emission from triplet excitons (phosphorescence), while others utilize organic materials. formed by inorganic matter, formed by organic matter and formed by inorganic matter. Materials formed by organic materials, including polymeric materials, low molecular weight materials, and polymeric materials However, it is not limited to this, and E There can be a variety of L elements.

[0025] An electron-emitting device is an element that extracts electrons by concentrating a high electric field on a cathode. For example, As electron emitters, Spindt type, carbon nanotube (CNT) type, metal-insulator- MIM (Metal-Insulator-Metal) type with metal layers, metal-insulator MIS (Metal-Insulator-Semiconductor) Torr type, MOS type, silicon type, thin film diode type, diamond type, surface conduction emitter Thin film types such as SCD type, metal-insulator-semiconductor-metal type, HEED type, EL type, polar The semiconductor device may be of a silicon type, a surface conduction (SCE) type, etc. However, it is not limited to these. The electron-emitting device may have a variety of electron-emitting elements.

[0026] A liquid crystal element is a device that controls the transmission or non-transmission of light by the optical modulation action of liquid crystals. It is composed of a pair of electrodes and liquid crystal. Controlled by the electric field applied to the crystal (including the horizontal electric field, the vertical electric field, or the diagonal electric field) The liquid crystal elements include nematic liquid crystal, cholesteric liquid crystal, smectic Liquid crystal, discotic liquid crystal, thermotropic liquid crystal, lyotropic liquid crystal, low molecular weight liquid crystal, Polymer liquid crystal, polymer dispersed liquid crystal (PDLC), ferroelectric liquid crystal, antiferroelectric liquid crystal, main chain liquid crystal, Side-chain polymer liquid crystal, plasma-addressed liquid crystal (PALC), banana-shaped liquid crystal, TN (Twis Twisted Nematic) mode, STN (Super Twisted Nematic) mode c) mode, IPS (In-Plane-Switching) mode, FFS (Fri nge Field Switching) mode, MVA (Multi-domain Vertical Alignment mode, PVA (Patterned Ve rtical Alignment), ASV(Advanced Super Vie) w) mode, ASM (Axially Symmetric aligned Micro o-cell mode, OCB (Optical Compensated Birefringence) ringence mode, ECB (Electrically Controlled Birefringence mode, FLC (Ferroelectric Liquid Crystal uid Crystal) mode, AFLC(AntiFerroelectric L Liquid Crystal mode, PDLC (Polymer Dispersed Liquid Crystal) mode Liquid Crystal mode, guest host mode, Blue phase However, it is not limited to this, and liquid crystal elements and A variety of different types can be used.

[0027] In addition, electronic paper is displayed by molecules (optical anisotropy, dye molecule orientation, etc.). (electrophoresis, particle migration, particle rotation, phase change, etc.), It is displayed by the movement of one end of the film, and by the color / phase change of the molecules. Some are displayed by molecular light absorption, and others by spontaneous light emission caused by electron-hole combinations. For example, electronic paper is a type of device that uses microcapsule electrophoresis. , horizontally moving electrophoresis, vertically moving electrophoresis, spherical twist ball, magnetic twist ball , cylindrical twist ball method, charged toner, electronic liquid powder (registered trademark of Bridgestone Corporation) ), magnetic migration type, magnetic heat sensitive type, electrowetting, light scattering (transparent, opaque), coreless Cholesteric liquid crystal / photoconductive layer, cholesteric liquid crystal, bistable nematic liquid crystal, ferroelectric liquid crystal , dichroic dye / liquid crystal dispersion type, movable film, leuco dye color development / decolorization, photochromic, electro It is possible to use electrochromic, electrodeposition, flexible organic electroluminescence, etc. However, it is not limited to this, and various types of electronic paper can be used. Here, by using microcapsule electrophoresis, the drawbacks of the electrophoresis method are overcome. It can solve the aggregation and precipitation of certain electrophoretic particles. Electronic liquid powder has high speed response and high reflectivity. It has advantages such as high efficiency, wide viewing angle, low power consumption, and memory properties.

[0028] A plasma display consists of a substrate with electrodes formed on its surface and a display panel with electrodes and minute grooves on its surface. The substrate is formed with a groove and a phosphor layer formed in the groove, and the substrate is placed opposite to the groove at a narrow interval, and a rare gas is sealed in. Alternatively, a plasma display has a structure in which a plasma tube is covered with filters from above and below. It is also possible to use a structure in which the plasma is sandwiched between glass-like electrodes. The tube contains discharge gas, RGB phosphors, etc. Applying voltage between the electrodes generates ultraviolet light, which makes the phosphor glow and displays the image. The plasma display can be DC type PDP or AC type PDP. Here, the plasma display panel may be an ASW (Address Waiting ile Sustain) drive, subframe reset period, address period, sustain period ADS (Address Display Separated) drive, CL EAR(HIGH-CONTRAST&LOW ENERGY ADDRESS&RED CUTION OF FALSE CONTOUR SEQUENCE) drive, ALIS (Alternate Lighting of Surfaces) method, TERES (Technology of Reciprocal Suspension) Drive, etc. However, the present invention is not limited to this, and various plasma displays can be used. can be used.

[0029] In addition, display devices that require a light source, such as liquid crystal displays (transmissive liquid crystal displays), , Transflective LCD, Reflective LCD, Direct-view LCD, Projection LCDs, display devices using grating light valves (GLVs), digital As a light source for a display device using a digital micromirror device (DMD), an electroluminescent Using luminescence, cold cathode tube, hot cathode tube, LED, laser light source, mercury lamp, etc. However, the light source is not limited to this, and various light sources can be used. .

[0030] Note that various types of transistors can be used as the transistor. There is no limitation on the type of transistor used. For example, amorphous silicon, polycrystalline silicon, microcrystalline silicon, Crystalline (also called microcrystalline, nanocrystalline, or semi-amorphous) silicon, etc. It is possible to use thin film transistors (TFTs) having non-single crystal semiconductor films, such as There are various advantages to using TFTs. For example, it is This allows for lower manufacturing temperatures, reducing manufacturing costs and enabling the use of larger manufacturing equipment. Since the manufacturing equipment can be made larger, it is possible to manufacture on large substrates. Since a large number of display devices can be manufactured, the manufacturing cost can be reduced. Therefore, a substrate with low heat resistance can be used. A transistor on a light-transmitting substrate can be used to manufacture a display element. The thin film of the transistor allows the light transmission to be controlled. A part of the film that makes up the transistor can transmit light, which improves the aperture ratio. It can be done.

[0031] When producing polycrystalline silicon, a catalyst (such as nickel) is used to This will further improve the crystallinity and make it possible to manufacture transistors with good electrical characteristics. As a result, gate driver circuits (scanning line driver circuits) and source driver circuits (signal line driver circuits) , signal processing circuits (signal generation circuit, gamma correction circuit, DA conversion circuit, etc.) are integrated on the board It can be achieved.

[0032] When manufacturing microcrystalline silicon, a catalyst (such as nickel) is used to This further improves the crystallinity, making it possible to manufacture transistors with good electrical characteristics. In this case, the crystallinity can be improved by simply applying heat treatment without laser irradiation. As a result, part of the source driver circuit (analog switch, etc.) and gate The gate driver circuit (scanning line driving circuit) can be formed integrally on the substrate. If laser irradiation is not performed for the purpose of crystallization, unevenness in the crystallinity of silicon can be suppressed. Therefore, it is possible to display an image with improved quality.

[0033] However, polycrystalline silicon and microcrystalline silicon are produced without using a catalyst (such as nickel). It is possible.

[0034] In addition, improving the crystallinity of silicon to polycrystalline or microcrystalline allows the entire panel to be It is desirable to perform this in a partial area of ​​the panel, but it is not limited to this. The crystallinity of the crystalline silicon may be improved. For example, the peripheral circuit area, which is an area other than the pixel area, can be selectively irradiated. Alternatively, the laser light may be irradiated only on the gate driver circuit, the source driver circuit, and the Alternatively, the laser light may be irradiated only on a region such as a path. The laser light may be irradiated only on the area of ​​the semiconductor device (for example, an analog switch). It is possible to improve the crystallization of silicon only in areas where high-speed circuit operation is required. Since there is little need for high-speed operation in the pixel area, there is no problem even if the crystallinity is not improved. The pixel circuit can be operated without any problems. The manufacturing process can be shortened, throughput can be improved, and manufacturing costs can be reduced. The number of required manufacturing equipment is also small, which reduces manufacturing costs. It is possible to do this.

[0035] Alternatively, a transistor can be formed using a semiconductor substrate, an SOI substrate, or the like. This allows for less variation in characteristics, size, and shape, a high current supply capacity, and a small size. These transistors can be used to fabricate transistors with small capacitances. This allows for lower power consumption and higher circuit integration.

[0036] Or ZnO, a-InGaZnO, SiGe, GaAs, IZO, ITO, SnO, Compound semiconductors or oxide semiconductors such as TiO, AlZnSnO (AZTO) transistors, and thin-film transistors made by thinning these compound semiconductors or oxide semiconductors. These can lower the manufacturing temperature, for example, to room temperature. As a result, it is possible to manufacture transistors on substrates with low heat resistance, such as Transistors can be formed directly on stick or film substrates. The compound semiconductor or oxide semiconductor is not only used in the channel portion of the transistor, For example, these compound semiconductors or oxide semiconductors can be used for other purposes. The conductor can be used as a resistor element, a pixel electrode, or a light-transmitting electrode. These can be deposited or formed simultaneously with the transistor, thereby reducing costs.

[0037] Alternatively, a transistor formed by inkjet or printing can be used. These allow fabrication at room temperature, in a low vacuum, or on a large substrate. Since it is possible to manufacture without using a mask (reticle), The layout can be easily changed. Furthermore, since there is no need to use resist, The cost of materials is reduced and the number of processes can be reduced. Furthermore, since the film is applied only to the necessary parts, This method is less wasteful and less costly than the method of forming a film on a surface and then etching it. can.

[0038] Alternatively, a transistor having an organic semiconductor or a carbon nanotube may be used. These features make it possible to form transistors on a flexible substrate. A semiconductor device using such a substrate can be made resistant to shocks.

[0039] Furthermore, transistors of various structures can be used. For example, MOS transistors The use of transistors such as junction transistors and bipolar transistors as transistors By using MOS transistors, the size of the transistors can be reduced. Therefore, multiple transistors can be mounted. By using a transistor, a large current can be passed through, which allows the circuit to operate at high speed. It can be made to work.

[0040] In addition, MOS transistors, bipolar transistors, etc. can be mixed and formed on a single substrate. This allows for low power consumption, miniaturization, high-speed operation, etc. .

[0041] In addition, various other transistors can be used.

[0042] Note that the transistor can be formed using various substrates. The substrate is not limited to, for example, a single crystal substrate (e.g., silicon substrate), SOI substrate, glass substrate, quartz substrate, plastic substrate, metal substrate, stainless steel Stainless steel substrate, substrate with stainless steel foil, tungsten substrate, tungsten A substrate with stainless steel foil, a flexible substrate, etc. can be used. An example of a glass substrate Examples of such glass include barium borosilicate glass and aluminoborosilicate glass. Examples of boards include polyethylene terephthalate (PET) and polyethylene naphthalate. (PEN), polyethersulfone (PES), or acrylic Other materials include flexible synthetic resins such as laminated films (polypropylene, etc.). Polyester, vinyl, polyvinyl fluoride, polyvinyl chloride, etc.), including fibrous materials Paper, base film (polyester, polyamide, polyimide, inorganic vapor deposition film, paper, etc.) ) or a transistor is formed on one substrate and then transferred to another substrate. The transistor may be transposed and placed on a different substrate. The substrates used are single crystal substrates, SOI substrates, glass substrates, quartz substrates, and plastic substrates. Board, paper substrate, cellophane substrate, stone substrate, wood substrate, cloth substrate (natural fiber (silk, cotton, linen), Synthetic fibers (nylon, polyurethane, polyester) or regenerated fibers (acetate, (including plaster, rayon, recycled polyester, etc.), leather substrate, rubber substrate, stainless steel A substrate with a stainless steel foil, a substrate with a stainless steel foil, etc. can be used. Alternatively, the skin (epidermis, dermis) or subcutaneous tissue of an animal such as a human may be used as the substrate. Alternatively, a transistor may be formed on a substrate, and the substrate may be polished to make it thinner. The substrates that can be polished include single crystal substrates, SOI substrates, glass substrates, quartz substrates, and plastic substrates. Substrates, stainless steel substrates, substrates with stainless steel foil, etc. are used. By using these substrates, it is possible to form transistors with good characteristics and consume Forming low-power transistors, producing durable devices, making them heat-resistant, lightweight, or It is possible to achieve a thinner design.

[0043] The structure of the transistor can take various forms and is not limited to a specific structure. For example, a multi-gate structure with two or more gate electrodes can be applied. In the gate structure, the channel regions are connected in series, so multiple transistors are connected in series. The multi-gate structure reduces the off-state current and increases the breakdown voltage of the transistor. Alternatively, the multi-gate structure can be used to reduce the saturation region. When operating in the low-voltage range, the drain-source current remains constant even if the drain-source voltage changes. The voltage-current characteristic slope is flat. By taking advantage of the flat slope, it is possible to create ideal current source circuits and circuits with very high resistance values. As a result, it is possible to realize an active load with good characteristics, such as a differential circuit or a current mirror circuit. The path can be realized.

[0044] As another example, a structure in which gate electrodes are arranged above and below the channel can be applied. By using a structure in which gate electrodes are arranged above and below the channel, The current value can be increased by increasing the number of gate electrodes above and below the channel. By using a structure in which the depletion layer is easily formed, the S value can be improved. In addition, by arranging gate electrodes above and below the channel, , a configuration in which a plurality of transistors are connected in parallel.

[0045] A structure in which a gate electrode is placed above a channel region, and a structure in which a gate electrode is placed below a channel region Structures in which the channel region is divided into multiple regions, such as a positive staggered structure, a reverse staggered structure, and a The structure may be a structure in which the channel regions are connected in parallel, or a structure in which the channel regions are connected in series. Furthermore, the source electrode and drain electrode are attached to the channel region (or a part of it). An overlapping structure can also be applied. By using a structure in which the gate electrodes overlap, charges accumulate in part of the channel region, This can prevent the operation from becoming unstable. Alternatively, a structure with an LDD region can be appropriately By providing an LDD region, it is possible to reduce the off-current or improve the breakdown voltage of the transistor. Alternatively, by providing an LDD region, it is possible to reduce saturation. When operating in the sum region, the drain-source current remains constant even if the drain-source voltage is changed. does not change much, and the slope of the voltage-current characteristic can be made flat.

[0046] Note that various types of transistors can be used and can be formed using various substrates. Therefore, all the circuits required to realize a given function can be implemented in the same For example, it is possible to form a circuit on a substrate that is necessary to realize a predetermined function. All of these are available on a variety of substrates, including glass, plastic, single crystal, or SOI substrates. It is also possible to form the entire circuit necessary to realize a predetermined function using a substrate. Since all components are formed using the same substrate, the number of components is reduced, resulting in cost reduction. Alternatively, the reliability can be improved by reducing the number of connection points with the circuit components. A part of the circuit required to realize a certain function is formed on a certain substrate, and the It is also possible that another part of the circuitry required to realize the above may be formed on another substrate. In other words, all of the circuits required to realize a given function are formed using the same substrate. For example, some of the circuits required to realize a specific function may be mounted on a glass substrate. Another part of the circuit formed by transistors on the board and required to realize a specified function. The part is formed on a single crystal substrate and is composed of transistors formed using the single crystal substrate. The IC chip is connected to the glass substrate using COG (Chip On Glass). It is also possible to place the IC chip on the board. (Tape Automated Bonding) and printed circuit boards are used to bond glass substrates. In this way, it is possible to connect the two circuits together. This reduces costs by reducing the number of components, and improves signal quality by reducing the number of connections to circuit components. Alternatively, it is possible to improve reliability in areas where the driving voltage is high and the driving frequency is high. The power consumption of the circuitry for these parts is high, so the circuits for these parts are formed on the same board. Instead, for example, a circuit for that part is formed on a single crystal substrate, and the circuit is configured By using an IC chip fabricated in this way, it is possible to prevent an increase in power consumption.

[0047] Note that one pixel refers to one element whose brightness can be controlled. In this case, one pixel refers to one color element, and the brightness is expressed by one color element. Therefore, in the case of a color display device consisting of R (red), G (green), and B (blue) color elements, In this example, the smallest unit of an image is composed of three pixels: an R pixel, a G pixel, and a B pixel. The color elements are not limited to three colors, and more than three colors may be used. Colors can also be used. For example, adding white makes it possible to use RGBW (W is white). Or, for example, yellow, cyan, magenta, emerald green, vermilion, etc. It is also possible to add one or more colors. It is also possible to add similar colors to RGB, for example R, G, B1, B2. B1 and B2 are both blue, but they have slightly different wavelengths. , R1, R2, G, B. By using such color elements, By using such color elements, it is possible to display more realistic images. Another example is using multiple regions for one color element. When controlling the brightness by using the area, it is possible to use one pixel for each area. For example, when performing area gradation or when using sub-pixels, one color There are multiple areas for controlling brightness for each element, and the overall gradation is expressed, but the brightness It is also possible to use one pixel for one area to be controlled. An element is made up of multiple pixels. Or, the area that controls the brightness is one Even if there are multiple color elements, they may be grouped together and one color element may be considered as one pixel. In this case, one color element is composed of one pixel. When controlling the brightness of one color element using multiple regions, the display The contributing areas may be of different sizes, or there may be multiple areas per color element. In the brightness control area, the signals supplied to each are slightly different. In other words, for one color element, multiple regions may be arranged so that the viewing angle is widened. The potentials of the pixel electrodes may be different from each other. The voltage applied to each pixel electrode is different, which makes it possible to widen the viewing angle. .

[0048] When explicitly stating one pixel (three colors), the three pixels of R, G, and B are considered to be one pixel. When explicitly describing one pixel (one color), it refers to one color element. In this case, when there are multiple regions, they are considered as one pixel.

[0049] In some cases, pixels are arranged (distributed) in a matrix. The pixels are arranged in a straight line in either the vertical or horizontal direction. This includes cases where they are arranged side by side or in a jagged line. For example, when displaying full color using three color elements (e.g., RGB), the stripes are arranged This also includes cases where the dots of the three color elements are arranged in a delta arrangement. This also includes the case where the dots are arranged in a Bayer pattern. This can reduce power consumption or extend the life of the display element. can.

[0050] In addition, the active matrix type has active elements in the pixels, or the A passive matrix method can be used.

[0051] In the active matrix system, the active element (active element, nonlinear element) is a transistor. Use not only transistors but also various active elements (active elements, nonlinear elements) For example, MIM (Metal Insulator Metal) and TFD ( Thin Film Diodes) can also be used. Since the number of manufacturing steps is small, it is possible to reduce manufacturing costs and improve yields. In addition, the small size of the element allows for an improved aperture ratio, resulting in lower power consumption and higher brightness. It is possible to achieve this.

[0052] In addition to the active matrix method, there are also active elements (active elements, nonlinear It is also possible to use a passive matrix type that does not use active elements. Since it does not use any nonlinear elements, there are fewer manufacturing steps, which reduces manufacturing costs and improves yield. Since no active elements (active elements, non-linear elements) are used, This makes it possible to improve the aperture ratio, thereby achieving lower power consumption and higher brightness.

[0053] A transistor is a device having at least three terminals including a gate, a drain, and a source. The element has a channel region between the drain region and the source region, A current can flow through the in-region, the channel region, and the source region. The source and drain depend on the transistor structure and operating conditions, so it is difficult to know which is the source or drain. Therefore, it is difficult to define whether the source or drain is the In some cases, the region that functions as a source or drain is not called a source or drain. In this case, they may be referred to as the first terminal and the second terminal, respectively. They may be referred to as the first electrode and the second electrode, or as the first region and the second region. There is.

[0054] The transistor has at least three terminals including a base, an emitter, and a collector. In this case, the emitter and the collector may be connected to the first terminal and the second terminal. It may be referred to as a terminal.

[0055] The gate is a gate electrode and a gate wiring (gate line, gate signal line, scanning line, scanning signal line). The term refers to the whole or part of a gate electrode and The gate insulating film is a part that overlaps the semiconductor that forms the channel region. The gate electrode is partially doped with LDD (Lightly Doped Diode). ed Drain) region or source region (or drain region) and The gate wiring is the gate electrode of each transistor. a wiring for connecting between the gate electrodes of each pixel, or This refers to the wiring that connects the gate electrode to another wiring.

[0056] However, there are areas (regions, conductive layers) that function as both gate electrodes and gate wiring. Such parts (regions, conductive films, wiring, etc.) are also present. In other words, the gate electrode and the gate wiring However, there are also regions that cannot be clearly distinguished. For example, If a part of the line overlaps with the channel region, that part (region, conductive film, wiring ) functions as a gate wiring, but also functions as a gate electrode. Therefore, such a part (region, conductive film, wiring, etc.) may be called a gate electrode. , which may also be called gate wiring.

[0057] It is made of the same material as the gate electrode and forms the same island as the gate electrode. The connected part (region, conductive film, wiring, etc.) may also be called a gate electrode. The gate wiring is made of the same material as the gate wiring and is connected to the same island as the gate wiring. The part (region, conductive film, wiring, etc.) that is connected to the gate may also be called the gate wiring. In the strict sense, the part (region, conductive film, wiring, etc.) does not overlap with the channel region. However, there are cases where the gate electrode does not have a function to connect to another gate electrode. Due to manufacturing specifications, the gate electrode or gate wiring is made of the same material. The area (region, Therefore, such parts (regions, conductive films, wiring, etc.) are also included in the gate. They may also be called gate electrodes or gate wirings.

[0058] For example, in a multi-gate transistor, one gate electrode and another gate In many cases, the electrode is connected to the gate electrode through a conductive film made of the same material. The necessary parts (regions, conductive films, wiring, etc.) are parts for connecting gate electrodes. Since it is a component (region, conductive film, wiring, etc.), it can be called gate wiring, but multi-gate Since the transistors can be considered as one transistor, they can be called gate electrodes. In other words, it is formed of the same material as the gate electrode or gate wiring, and The part (area, conductive film, wiring, etc.) that forms the same island as the port wiring and is connected The gate electrodes and gate wirings may be called gate electrodes or gate wirings. A conductive film that is connected to wiring and is different from the gate electrode or gate wiring. The conductive film formed from the material may also be called a gate electrode or a gate wiring.

[0059] The gate terminal is the part of the gate electrode (region, conductive film, wiring, etc.) or Regarding the part (area, conductive film, wiring, etc.) that is electrically connected to the electrode, It is said that.

[0060] Note that a certain wiring may be called a gate wiring, gate line, gate signal line, scanning line, scanning signal line, etc. In some cases, the gate of the transistor may not be connected to the wiring. The gate wiring, gate lines, gate signal lines, scanning lines, and scanning signal lines are the same as the gates of transistors. wiring formed in the same layer as the gate of the transistor, wiring formed in the same material as the gate of the transistor, or It may refer to the wiring deposited at the same time as the gate of a transistor. These include measurement wiring, power supply wiring, and reference potential supply wiring.

[0061] The source includes the source region, the source electrode, and the source wiring (source line, source signal line, It refers to the whole or part of the data line (also called data line, data signal line, etc.). The source region is formed by doping P-type impurities (such as boron or gallium) or N-type impurities (such as phosphorus or arsenic). Therefore, it refers to a semiconductor region that contains a large amount of P-type impurities and N-type impurities. The region containing The source electrode is formed of a material different from the source region and is not included in the source region. The term "conductive layer" refers to the portion of the conductive layer that is electrically connected to the source region. The source electrode is sometimes called the source electrode, including the source region. wiring for connecting the source electrodes of the transistors, and wiring for connecting the source electrodes of each pixel. This refers to a wiring for connecting a source electrode to another wiring, or a wiring for connecting a source electrode to another wiring.

[0062] However, there is a part (area) that functions as both a source electrode and a source wiring. Such parts (areas, conductive films, wiring, etc.) are also present. It may be called a source electrode or a source wiring. There are also areas where it is difficult to clearly distinguish between lines and objects. When a part of the source wiring overlaps with the source region, the part (region, conductive film , wiring, etc.) functions as a source wiring, but also as a source electrode. Therefore, such a part (region, conductive film, wiring, etc.) can be called a source electrode. That's fine, you can call it source wiring.

[0063] It is made of the same material as the source electrode and forms the same island as the source electrode. Connected parts (regions, conductive films, wiring, etc.) and connecting source electrodes The part (region, conductive film, wiring, etc.) that is connected to the source electrode may also be called the source electrode. The overlapping portion of the source line may also be called the source electrode. There are also regions that are made of the same material and form the same island as the source wiring. Such a part (region, conductive film, wiring, etc.) may be called a source wiring. In some cases, the device may not have the ability to connect to a separate source electrode. Due to specifications, the source electrode or source wiring is made of the same material. There are parts (regions, conductive films, wiring, etc.) that are connected to the source wiring. Such a part (region, conductive film, wiring, etc.) may also be called a source electrode or source wiring.

[0064] For example, the conductive film in the portion connecting the source electrode and the source wiring is A conductive film formed of a material different from the source electrode or source wiring may also be called a source electrode. Alternatively, it may be called source wiring.

[0065] The source terminal may be a region of the source region, a source electrode, or a region electrically connected to the source electrode. It refers to a part of a structure (such as an area, conductive film, or wiring).

[0066] A certain wiring may be referred to as a source wiring, a source line, a source signal line, a data line, a data signal line, etc. When a transistor is called a "transistor," the source (drain) of the transistor may not be connected to the wiring. In this case, the source wiring, source line, source signal line, data line, and data signal line are The wiring formed in the same layer as the source (drain) of the transistor, The wiring is made of the same material as the source (drain) of the transistor, or the wiring is made of the same material as the source (drain) of the transistor. Examples include storage capacitor wiring, power supply wiring, and reference voltage wiring. Power supply wiring, etc.

[0067] The drain is the same as the source.

[0068] Semiconductor devices include semiconductor elements (transistors, diodes, thyristors, etc.). It refers to a device that has a circuit. Furthermore, it refers to the entire device that can function by utilizing the characteristics of semiconductors. Generally, a device that has semiconductor material can be called a semiconductor device. say.

[0069] The display device refers to a device having a display element. The display device may include a plurality of pixels including a peripheral circuit for driving the plurality of pixels. The peripheral driving circuit for driving the plurality of pixels may include a driving circuit. The display device may be formed on the same substrate as the element. The peripheral drive circuits arranged on the board by the chip-on-glass (COG) It may include an IC chip connected to the board or an IC chip connected by a tab or the like. The display device may contain IC chips, resistors, capacitors, inductors, transistors, etc. The flexible printed circuit (FPC) may be attached. The display device is connected via a flexible printed circuit (FPC) or the like, and the IC chip Printed wiring with resistors, capacitors, inductors, transistors, etc. attached The display device may include an optical element such as a polarizing plate or a retardation plate. The display device may include a lighting device, a housing, an audio input / output device, a light source, and a display sheet. It may also include a sensor.

[0070] The lighting device includes a backlight unit, a light guide plate, a prism sheet, a diffusion sheet, a reflector, It has a sheet, a light source (LED, cold cathode fluorescent lamp, etc.), a cooling device (water-cooled, air-cooled), etc. is also good.

[0071] The light-emitting device refers to a device having a light-emitting element or the like. When the light-emitting device has an element, it is a specific example of a display device.

[0072] The reflecting device is a device that has a light reflecting element, a light diffracting element, a light reflecting electrode, etc. This refers to...

[0073] The liquid crystal display device refers to a display device having a liquid crystal element. There are various types, including visual, projection, transmissive, reflective, and semi-transmissive.

[0074] The driving device refers to a device that has semiconductor elements, electric circuits, and electronic circuits. For example, a transistor (selection transistor) that controls the input of a signal from a source signal line to a pixel (sometimes called a phototransistor or switching transistor) that applies voltage or current to the pixel electrode The transistors that supply voltage or current to the light-emitting element are Furthermore, a circuit for supplying signals to the gate signal lines (gate driver, gate the source signal line driver circuit, and the circuit that supplies signals to the source signal line (source driver A pixel driver (sometimes called a pixel driver or a source line driver circuit) is an example of a driver.

[0075] In addition, display devices, semiconductor devices, lighting devices, cooling devices, light-emitting devices, reflecting devices, driving devices, etc. For example, a display device may have a semiconductor device and a light emitting device. Alternatively, the semiconductor device may have a display device and a driver. This may be the case.

[0076] Note that it is not possible to explicitly say that B is formed on A, or that B is formed on A. When describing, it is not limited to forming B on A in direct contact with it. This also includes cases where there is no object between A and B, i.e., there is another object between A and B. Here, A and B are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.).

[0077] Therefore, for example, it is not possible to explicitly state that layer B is formed on top of layer A (or on top of layer A). When the layer is placed on top of the substrate, there are cases where layer B is formed directly on top of layer A, and cases where layer B is formed directly on top of layer A. Another layer (such as layer C or layer D) is formed adjacent to it, and layer B is formed directly on top of it. It should be noted that other layers (such as layer C and layer D) may be formed separately. It may be a single layer or multiple layers.

[0078] Furthermore, the same applies when it is explicitly stated that B is formed above A. This is not limited to B being directly on top of A, but also includes the presence of another object between A and B. For example, if layer B is formed above layer A, In this case, there are two cases: when layer B is formed directly on top of layer A, and when layer B is formed directly on top of layer A. Another layer (such as layer C or layer D) is formed, and layer B is formed directly on top of it. It should be noted that other layers (such as layers C and D) may be single layers. Alternatively, it may be multi-layered.

[0079] In addition, B is formed on A, B is formed on A, or B is formed above A. When explicitly stating that "B" is formed, this also includes the case where B is formed diagonally above. .

[0080] The same applies to the case where B is below A, or B is below A.

[0081] In addition, when something is explicitly stated as singular, it is preferable that it be singular. However, it is not limited to this, and plural numbers are also possible. It is preferable that the items listed are plural. However, this is not limited to this. , it is also possible that it is singular.

[0082] In the drawings, the size, thickness of layers, or areas may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0083] The diagrams are merely diagrams showing ideal examples, and are not limited to the shapes or values ​​shown in the diagrams. For example, variations in shape due to manufacturing technology, variations in shape due to errors, and noise Variations in signals, voltages, or currents due to timing differences, or variations in signals, voltages, Alternatively, it is possible to include variations in current.

[0084] Note that technical terms may be used to describe specific embodiments or examples. Many, but not limited to:

[0085] In addition, undefined terms (including scientific and technical terms such as technical terms or academic terms) are generally It can be used as a meaning equivalent to the general meaning understood by a person of ordinary skill in the art. The terms defined herein shall be construed in a manner consistent with the background of the relevant art. is preferred.

[0086] It should be noted that the terms first, second, third, etc., refer to various elements, members, regions, layers, and sections as distinct from one another. Therefore, the words "first," "second," "third," etc. are used to distinguish between elements, parts, etc. It is not intended to limit the number of materials, regions, layers, areas, etc. It is possible to replace "second" or "third" etc.

[0087] In addition, "up," "upward," "down," "downward," "sideways," "right," "left," Spatial positioning terms such as "diagonally," "in the back," or "in front" may be used to indicate the position of an element or is sometimes used to simply illustrate the relationship of a feature to other elements or features. However, this is not limited to this, and the words and phrases that indicate these spatial arrangements are added to the direction drawn in the drawing. In addition, other orientations are possible. For example, if it is explicitly stated that B is above A, The device shown is not limited to B being above A. It can be flipped or rotated 180 degrees. Since it is possible for B to be under A, it is possible for B to be under A. The phrase "on" can include an orientation of "under" in addition to an orientation of "on." However, the device in the figure is not limited to this and can be rotated in various directions. The term "above" includes the directions "above" and "below," as well as "sideways," "to the right," and "to the left." It is possible to include other directions such as "towards," "diagonally," "behind," or "forward." . [Effects of the Invention]

[0088] In the disclosed invention, a light-transmitting transistor or a light-transmitting capacitor is formed. Therefore, even when a transistor or a capacitor is disposed in a pixel, Since light can be transmitted through the area where the transistor and the capacitor are formed, Therefore, the aperture ratio can be improved. A wiring that connects a capacitor to another capacitor, or a wiring that connects a capacitor to another capacitor The wiring can be made of materials with low resistivity and high conductivity, so the signal This reduces waveform distortion and voltage drop due to wiring resistance. [Brief explanation of the drawings]

[0089] [Figure 1] 1A and 1B are top views illustrating a semiconductor device. [Figure 2] 1 is a cross-sectional view illustrating a semiconductor device. [Figure 3] 1A to 1C illustrate a method for manufacturing a semiconductor device. [Figure 4] 1A to 1C illustrate a method for manufacturing a semiconductor device. [Figure 5] 1A to 1C illustrate a method for manufacturing a semiconductor device. [Figure 6] FIG. 10 is a diagram illustrating a multi-tone mask. [Figure 7] 1A to 1C illustrate a method for manufacturing a semiconductor device. [Figure 8] 1A to 1C illustrate a method for manufacturing a semiconductor device. [Figure 9] 1A to 1C illustrate a method for manufacturing a semiconductor device. [Figure 10] 1A to 1C illustrate a method for manufacturing a semiconductor device. [Figure 11] 1A and 1B are top views illustrating a semiconductor device. [Figure 12] 1 is a cross-sectional view illustrating a semiconductor device. [Figure 13] 1A and 1B are a top view and a cross-sectional view illustrating a semiconductor device. [Figure 14] 1A and 1B are a top view and a cross-sectional view illustrating a semiconductor device. [Figure 15] 1A and 1B are a top view and a cross-sectional view illustrating a semiconductor device. [Figure 16] 1A and 1B are a top view and a cross-sectional view illustrating a semiconductor device. [Figure 17] 1A and 1B are top views illustrating a semiconductor device. [Figure 18] 1A and 1B are top views illustrating a semiconductor device. [Figure 19] 1 is a cross-sectional view illustrating a semiconductor device. [Figure 20] 1 is a cross-sectional view illustrating a semiconductor device. [Figure 21] 1A and 1B are top views illustrating a semiconductor device. [Figure 22] 1A to 1C illustrate a semiconductor device. [Figure 23] 1A to 1C illustrate a semiconductor device. [Figure 24] 1A to 1C illustrate a semiconductor device. [Figure 25] 1A to 1C illustrate a semiconductor device. [Figure 26] 1A to 1C illustrate a semiconductor device. [Figure 27] 1A to 1C illustrate a semiconductor device. [Figure 28] 1A to 1C illustrate a semiconductor device. [Figure 29] 1A to 1C illustrate a semiconductor device. [Figure 30] 1A to 1C illustrate electronic devices. [Figure 31] 1A to 1C illustrate electronic devices. [Figure 32] 1A to 1C illustrate electronic devices. [Figure 33] 1A to 1C illustrate electronic devices. [Figure 34] 1A to 1C illustrate electronic devices. [Figure 35] 1 is a cross-sectional view illustrating a semiconductor device. [Figure 36] 1A to 1C illustrate a method for manufacturing a semiconductor device. [Figure 37] 1A and 1B are top views illustrating a semiconductor device. [Figure 38] 1A and 1B are top views illustrating a semiconductor device. [Figure 39] 1A and 1B are top views illustrating a semiconductor device. [Figure 40] 1A and 1B are top views illustrating a semiconductor device. [Figure 41] 1A to 1C illustrate a semiconductor device. [Figure 42] 1A to 1C illustrate a semiconductor device. [Figure 43] 1A to 1C illustrate a semiconductor device. [Figure 44] 1A to 1C illustrate a semiconductor device. [Figure 45] 1A to 1C illustrate a semiconductor device. [Figure 46] 1A to 1C illustrate a semiconductor device. [Figure 47] 1A to 1C illustrate a semiconductor device. [Figure 48] 1A to 1C illustrate a semiconductor device. DETAILED DESCRIPTION OF THE INVENTION

[0090] The embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the description of the embodiment, and various changes in form and details are possible without departing from the spirit of the invention. It is obvious to those skilled in the art that the same can be achieved. The same reference numerals are used for parts or parts having similar functions, and repeated explanations thereof are omitted. do.

[0091] Note that the content (or even a part of the content) described in one embodiment may be used in conjunction with that embodiment. Other content (or even part of content) described in the above, and / or one or more other implementations The content (or part of the content) described in the form of You can do things like:

[0092] The contents described in the embodiments are explained in detail in each embodiment using various drawings. This refers to the content that is stated or the content that is stated using the text in the specification.

[0093] In addition, a drawing (or a part thereof) described in one embodiment may be different from another part of the drawing, Another figure (or a part thereof) described in the embodiment, and / or one or more By combining with the figure (or a part thereof) described in another embodiment of the present invention, , and many more diagrams can be constructed.

[0094] In addition, in a drawing or a sentence described in a certain embodiment, a part thereof may be extracted. Therefore, the drawings and drawings that illustrate certain parts of the invention may be omitted. If a part of a drawing or text is included in the invention, the part of the drawing or text may also be included in the invention. It is disclosed as an embodiment and may constitute an embodiment of the invention. Therefore, for example, active elements (transistors, diodes, etc.), wiring, passive elements (capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, Substrate, module, device, solid, liquid, gas, method of operation, method of manufacture, etc. The drawings (cross-section, plan view, circuit diagram, block diagram, flow chart, process chart, perspective view) , elevation, layout, timing chart, structural diagram, schematic diagram, graph, table, optical path diagram, vector A part of a graph (such as a graph, phase diagram, waveform diagram, photograph, or chemical formula) or text can be extracted. This can constitute one aspect of the invention.

[0095] (Embodiment 1) In this embodiment mode, a semiconductor device and a manufacturing method thereof will be described with reference to the drawings.

[0096] 1 and 2 show a structural example of a semiconductor device described in this embodiment mode. Note that FIG. 1 is a top view. 2(A) corresponds to the cross section between A and B in FIG. 1, and FIG. 2(B) corresponds to the cross section between C and C in FIG. It corresponds to the cross section between D.

[0097] The semiconductor device shown in FIG. 1 includes a pixel portion provided with a transistor 152 and a storage capacitor portion 154. 150, wiring 122, wiring 124, and wiring 126. The pixel section 150 refers to an area surrounded by the plurality of wirings 122 and the plurality of wirings 126 .

[0098] The wiring 122 can function as a gate wiring. The wiring 126 can function as a source wiring. However, the present invention is not limited to these.

[0099] The transistor 152 has an electrode 132 provided on the substrate 100 and a gate electrode 132 provided on the electrode 132. an insulating layer 106 formed thereon, an electrode 136 and an electrode 138 formed on the insulating layer 106, and 106 so as to overlap the electrode 132 and is provided on the electrodes 136 and 138. The semiconductor layer 112a is formed on the insulating film 111 (see FIG. 2A).

[0100] The electrode 132 can function as a gate electrode. The electrode 136 or the electrode 138 can function as a source electrode or a gate insulating layer. The semiconductor layer 112a can function as a drain electrode. However, it is not limited to these.

[0101] The electrode 132 is formed using a light-transmitting conductive layer 102 a and is electrically connected to the wiring 122 . The wiring 122 is configured with a laminated structure of a conductive layer 102a and a conductive layer 104a. In addition, the conductive layer 102a constituting the electrode 132 and the conductive layer 102b constituting the wiring 122 are The electrode 132 and the wiring 122 are formed on the same island. By providing the same island-shaped conductive layer 102a, the electrical connection between the electrode 132 and the wiring 122 can be improved. In addition, the electrode 132 and the wiring 122 are formed on the same island-shaped conductive layer 102a. By providing the masks, the number of masks in the manufacturing process can be reduced, thereby reducing costs. An insulating base layer may be provided between the substrate 100 and the electrode 132.

[0102] The conductive layer 102a is made of indium tin oxide (ITO). The conductive layer 104a can be formed using a light-transmitting material such as a conductive layer 102. It is sufficient to use a material with a lower resistivity than a, for example, aluminum (Al) or tungsten. (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), Platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (N d), niobium (Nb), cerium (Ce), chromium (Cr), or other metallic materials The alloy material mainly composed of these metal materials or the nitrides composed of these metal materials are used. These metal materials can be formed as a single layer or a multilayer. Generally, these metal materials have a light-shielding property. Therefore, in the structure shown in FIG. 1, the portion where the electrode 132 is formed is transparent, and the wiring 1 The portion where the electrode 22 is formed exhibits light blocking properties compared to the portion where the electrode 132 is formed. .

[0103] In the above description, the term "transparent" means that at least the conductive layer 104a and the conductive layer 110a This means that it has a higher transmittance of light in the visible range (approximately 400nm to 800nm) compared to Taste.

[0104] In addition, the conductive layer 104a is preferably formed thicker than the conductive layer 102a. When the conductive layer 102a is formed thick, the wiring resistance can be reduced. When the film is formed thinly, the light transmittance can be improved. However, this is not limited to this. do not have.

[0105] 1 and 2, the conductive layer 104a is stacked on the conductive layer 102a as the wiring 122. However, the conductive layer 102a may be stacked over the conductive layer 104a.

[0106] The electrode 136 is formed using a light-transmitting conductive layer 108a and is electrically connected to the wiring 126. The wiring 126 is configured with a laminated structure of a conductive layer 108a and a conductive layer 110a. In addition, the conductive layer 108a constituting the electrode 136 and the conductive layer 108b constituting the wiring 126 are The electrode 136 and the wiring 126 are formed on the same island. By providing the same island-shaped conductive layer 108a, the electrical connection between the electrode 136 and the wiring 126 can be improved. can be performed well.

[0107] The electrode 138 is formed using a light-transmitting conductive layer 108b. The poles 138 can be formed using the same material.

[0108] The conductive layers 108a and 108b are formed using a light-transmitting material such as indium tin oxide. The conductive layer 110a may be made of a material having a lower resistivity than the conductive layer 108a. For example, aluminum (Al), tungsten (W), titanium (Ti), tantalum ( Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au ), silver (Ag), manganese (Mn), neodymium (Nd), niobium (Nb), cerium (C e) Metallic materials such as chromium (Cr), or alloy materials whose main components are these metallic materials or nitrides containing these metal materials as components, and can be formed in a single layer or laminated layers. Generally, metal materials have a light-shielding property, so in the structure shown in FIG. The part where the wiring 126 is formed is transparent, and the part where the electrode 136 is formed is transparent. This will show light-blocking properties compared to the exposed part.

[0109] It is also preferable to form the conductive layer 110a thicker than the conductive layers 108a and 108b. When the conductive layer 110a is formed thick, the wiring resistance can be reduced. When 108a and 108b are formed thinly, the transmittance can be improved. , but is not limited to this.

[0110] The wiring 124 is preferably formed using the light-transmitting conductive layer 102b. As shown in FIGS. 1 and 2, the area where the wiring 124 and the wiring 126 overlap (and the area nearby) In the present invention, a laminated structure of a conductive layer 102b and a conductive layer 104b having a lower resistance than the conductive layer 102b is provided. By forming the wiring 124 as shown in FIGS. The aperture ratio of the element portion 150 is improved, and the wiring resistance of the wiring 124 is reduced, resulting in low power consumption. Of course, the wiring 124 may be formed only from the conductive layer 102b having a light-transmitting property. Alternatively, only the conductive layer 104b may be provided.

[0111] The storage capacitor 154 has the insulating layer 106 as a dielectric, the conductive layer 102b having light-transmitting properties, and the The conductive layer 108c is configured as an electrode. The conductive layer 108c is electrically connected to the conductive layer 116. This can be done through a contact hole formed in the insulating layer 114 which functions as an interlayer film. The conductive layer 116 can function as a pixel electrode.

[0112] In addition, the storage capacitor 154 is formed by using the insulating layer 106 and the insulating layer 114 as dielectrics and the conductive layer 1 The insulating layer 112 and the conductive layer 116 may be used as electrodes (see FIG. 35A). In FIG. 35(A), the insulating layer 114 is made of an inorganic material (silicon nitride, etc.). A storage capacitor is formed by stacking an insulating layer 114a and an insulating layer 114b made of an organic material in this order. The insulating layer 114b made of an organic material is removed in the storage capacitor portion 154, and the storage capacitor portion 154 is formed as follows: The insulating layer 106 and the insulating layer 114a are dielectrics, and the conductive layer 102b and the conductive layer 116 are electrodes. It may be configured to be used as such (see FIG. 35(B)).

[0113] As shown in FIGS. 1 and 2, the storage capacitor 154 is provided using a light-transmitting material. This allows light to pass through the region where the storage capacitor 154 is formed. Therefore, the aperture ratio of the pixel section 150 can be improved.

[0114] In addition, by configuring the electrode used for the storage capacitor 154 with a conductive layer having light transmission properties, Therefore, the storage capacitor 154 can be enlarged without reducing the aperture ratio. By making the conductive layer 4 large, even when the transistor 152 is turned off, The potential retention characteristics of the feedthrough 116 are improved, and the display quality can be improved. By reducing the field-through potential, the positive This allows for accurate voltage application, reducing flickering and improving noise resistance. By increasing the number of channels, crosstalk can be reduced.

[0115] The conductive layer 116 is electrically connected to the electrode 138 and the conductive layer 108c.

[0116] As described above, the electrode 132, the semiconductor layer 112a, the electrode 136, the electrode 138, the storage capacitor 1 By forming the transistor 152 in the region 54 using a light-transmitting material, Since light can be transmitted through the area where the storage capacitor 154 is formed and the area where the storage capacitor 154 is formed, The aperture ratio of the element portion 150 can be improved. By providing a part of 24 with a conductive layer made of a metal material with low resistivity, the wiring resistance can be reduced. As a result, waveform distortion can be reduced. can be reduced.

[0117] Usually, the gate wiring and gate electrode, and the source wiring and source electrode are formed on the same island. Therefore, the gate electrode, source electrode, and drain electrode are made of a light-transmitting material. In this case, wirings such as gate wirings and source wirings are also formed of a light-transmitting material. However, a transparent material, such as indium tin oxide, Indium zinc oxide, indium tin zinc oxide, etc. are materials having light blocking and reflecting properties, for example , aluminum, molybdenum, titanium, tungsten, neodymium, copper, silver and other metal materials Since the conductivity is relatively low, it is difficult to sufficiently reduce the wiring resistance. When manufacturing such a display device, the wiring becomes long, and the wiring resistance tends to become very high. As described above, the electrode 132, the semiconductor layer 112a, the electrode 136, the electrode 138, the holding The capacitor portion 154 is formed of a light-transmitting material, and the wirings 122, 126, and 124 are By providing a part of the conductive layer made of a metal material with low resistivity, this problem can be solved. can be solved.

[0118] In addition, the conductive layer 104a constituting the gate wiring and the conductive layer 110a constituting the source wiring are By forming the wiring using a metal material having a light-shielding property, the wiring resistance can be reduced and the adjacent In other words, the gate electrodes arranged in the row direction can be shielded from light. The line and the source line arranged in the column direction allow for a black matrix to be used. Of course, it is possible to shield the area between pixels from light without providing a black matrix separately. This may provide more effective light blocking.

[0119] In addition, the structure shown in FIGS. 1 and 2 may be configured without the storage capacitor 154. In this case, the wiring 124 is also unnecessary.

[0120] Next, an example of a method for manufacturing the semiconductor device shown in FIGS. 1 and 2 will be described with reference to FIGS. 3 to 5. and explain.

[0121] First, a conductive film 102 is formed on a substrate 100 (see FIG. 3A). A base insulating film may be formed between the layers 102.

[0122] The substrate 100 may be, for example, a glass substrate. The substrates are insulating substrates made of insulators such as ceramic substrates, quartz substrates, and sapphire substrates; The surface of a semiconductor substrate made of semiconductor material such as silicon is covered with an insulating material, A conductive substrate made of a conductor such as aluminum or the like, the surface of which is covered with an insulating material, can be used. In addition, a plastic substrate can also be used if it can withstand the heat treatment in the manufacturing process. .

[0123] The conductive film 102 can be formed using a light-transmitting material. Examples of the material include indium tin oxide (InTinOxide). ITO), indium tin oxide with silicon oxide (ITSO), organic indium, organic tin In addition, zinc oxide (ZnO) and the like can be used. Indium Zinc Oxide (IZO), zinc oxide with gallium (Ga) Doped, tin oxide (SnO2), indium oxide with tungsten oxide, acid Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, Indium tin oxide containing titanium may also be used. Therefore, it can be formed in a single layer structure or a laminated structure. It is desirable to have a sufficiently high light transmittance in the laminate structure.

[0124] Next, a resist mask 161 is formed over the conductive film 102. The conductive film 102 is etched using the etching method to form island-shaped conductive layers 102a and 102b. b is formed (see Figure 3(B)).

[0125] The conductive layer 102a functions as a part of the wiring 122 and the electrode 132. 2b functions as a part of the wiring 124.

[0126] Next, a conductive film 104 is formed on the substrate 100, the conductive layer 102a, and the conductive layer 102b (FIG. (See 3(C)).

[0127] The conductive film 104 may be made of aluminum (Al), tungsten (W), titanium (Ti), Tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu) , gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), niobium (Nb), Metallic materials such as cerium (Ce), chromium (Cr), or materials containing these metallic materials as the main components It is formed in a single layer or multilayer using alloy materials or nitrides containing these metal materials. It is particularly desirable to form the insulating film from a low-resistance conductive material such as aluminum. stomach.

[0128] When the conductive film 104 is formed on the conductive layers 102a and 102b, the two films react with each other. For example, when ITO is used as the conductive layers 102a and 102b, the conductive film 10 If aluminum is used as 4, a chemical reaction may occur. In order to avoid chemical reactions, the conductive layers 102a and 102b and the conductive film 104 It is desirable to use a high melting point material. For example, molybdenum is an example of a high melting point material. Examples of materials that can be used include titanium, tungsten, tantalum, and chromium. It is preferable to use a material with high conductivity on the previously used film to form the conductive film 104 as a multi-layer film. Materials with high conductivity include aluminum, copper, and silver. When the film 104 is formed in a laminated structure, the first layer is made of molybdenum, the second layer is made of aluminum, The third layer is a layer of molybdenum, or the first layer is molybdenum and the second layer is a small amount of neodymium. The first layer is made of aluminum, and the second layer is made of molybdenum. By doing so, hillocks can be prevented.

[0129] Next, a resist mask 162 is formed over the conductive film 104. The conductive film 104 is etched using the etching method to form island-shaped conductive layers 104a and 104b. b is formed (see Figure 3(D)).

[0130] At this time, the conductive film 104 formed on the conductive layer 102a functioning as the electrode 132 and the wiring In step 124, the conductive film 104 provided in the region to be disposed in the pixel portion is removed.

[0131] The conductive layer 104a functions as a part of the wiring 122. The conductive layer 104b functions as a part of the wiring 122. It functions as part of 24.

[0132] In FIG. 3D, the width of the conductive layer 104a is set smaller than the width of the conductive layer 102a. and the width of the conductive layer 104b is formed to be smaller than the width of the conductive layer 102b. The width of the conductive layer 104a is set to be larger than the width of the conductive layer 102a. The conductive layer 104a may be formed to cover the conductive layer 102a, or the conductive layer 104b may be formed to cover the conductive layer 102a. The width of the conductive layer 104b is made larger than the width of the conductive layer 102b, and the conductive layer 104b is made to cover the conductive layer 102b. may be formed.

[0133] Next, the insulating layer 106 is formed to cover the conductive layers 102a, 102b and the conductive layers 104a, 104b. Then, a conductive film 108 is formed over the insulating layer 106 (see FIG. 3E).

[0134] The insulating layer 106 may be a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or a nitride oxide film. silicon oxide film, aluminum oxide film, aluminum nitride film, aluminum oxynitride film, nitride The insulating film can be formed as a single layer or a multilayer of an aluminum oxide film or a tantalum oxide film. The edge layer 106 is formed to a thickness of 50 nm or more and 250 nm or less by using a sputtering method or the like. For example, the insulating layer 106 can be formed by sputtering or CVD. Alternatively, aluminum oxide can be formed by sputtering to a thickness of 100 nm. The silicon film can be formed to a thickness of 100 nm.

[0135] The conductive film 108 can be formed using a light-transmitting material. Examples of the material include indium tin oxide (InTinOxide). ITO), indium tin oxide with silicon oxide (ITSO), organic indium, organic tin In addition, zinc oxide (ZnO) and the like can be used. Indium Zinc Oxide (IZO), zinc oxide with gallium (Ga) Doped, tin oxide (SnO2), indium oxide with tungsten oxide, acid Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, Indium tin oxide containing titanium may also be used. Therefore, it can be formed in a single layer structure or a laminated structure. It is desirable to make the light transmittance of all of the multiple films sufficiently high.

[0136] Next, a resist mask 163 is formed over the conductive film 108. By etching the conductive film 108, island-shaped conductive layers 108a and 108b are formed. Then, a conductive layer 108c is formed (see FIG. 4A).

[0137] The conductive layer 108a functions as a part of the wiring 126 and the electrode 136. The conductive layer 108b functions as an electrode 138. The conductive layer 108c functions as one of the storage capacitors 154. It functions as an electrode.

[0138] In addition, it is preferable to form the end of the conductive layer 108b in a tapered shape. This is because it is possible to prevent the semiconductor layer formed on b from being cut off.

[0139] Next, a conductive film 110 is formed to cover the conductive layers 108a to 108c (see FIG. 4(B)). ).

[0140] The conductive film 110 may be made of aluminum (Al), tungsten (W), titanium (Ti), Tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu) Metallic materials such as gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), is an alloy material whose main component is one of these metal materials, or a nitride material whose component is one of these metal materials. The conductive material can be a single layer or a laminated layer. It is desirable to form it from a material.

[0141] When the conductive film 110 is formed on the conductive layers 108a to 108c, the two films react with each other. For example, when ITO is used as the conductive layers 108a to 108c, the conductive film 11 If aluminum is used as 0, a chemical reaction may occur. In order to prevent chemical reactions from occurring, the conductive layers 108a to 108c and the conductive film 110 It is desirable to use a high melting point material. For example, molybdenum is an example of a high melting point material. Examples of materials that can be used include titanium, tungsten, tantalum, and chromium. It is preferable to use a material with high conductivity on the previously used film to form the conductive film 110 as a multi-layer film. Materials with high conductivity include aluminum, copper, and silver. When the film 110 is formed in a laminated structure, the first layer is made of molybdenum, the second layer is made of aluminum, The third layer is a layer of molybdenum, or the first layer is molybdenum and the second layer is a small amount of neodymium. The first layer is made of aluminum, and the second layer is made of molybdenum. By doing so, hillocks can be prevented.

[0142] Next, a resist mask 164 is formed over the conductive film 110. The conductive film 110 is etched using the etching method to form island-shaped conductive layers 110a (FIG. 4). (See (C)).

[0143] Specifically, etching is performed so that the conductive film 110 remains on the conductive layer 108a. In this case, the conductive film 110 formed over the conductive layer 108a functioning as the electrode 136 is removed. In other words, the conductive layer 110 a functions as a part of the wiring 126 .

[0144] Next, a light-transmitting semiconductor film is formed to cover the conductive layers 108a and 108b, the insulating layer 106, and the like. 112 is formed (see FIG. 4(D)).

[0145] The semiconductor film 112 may be formed using an oxide semiconductor containing, for example, In, M, or Zn. Here, M is a metal selected from Ga, Fe, Ni, Mn, Co, etc. In addition, when Ga is used as M, this thin film is called In In addition, in the above oxide semiconductor, M is contained. In addition to the metal elements contained in the alloy, Fe, Ni and other transition metal elements, or the transition metal elements, may be contained as impurity elements. The semiconductor film 112 may contain an oxide of a metal. The impurities may include silicon oxide, germanium oxide, and aluminum oxide. Insulating oxides such as silicon nitride and aluminum nitride Insulating nitrides such as silicon oxynitride and aluminum oxynitride are used. These insulating oxides or insulating nitrides impair the electrical conductivity of the oxide semiconductor. By adding insulating impurities to the oxide semiconductor, the oxide By suppressing the crystallization of the oxide semiconductor, This makes it possible to stabilize the characteristics of the thin film transistor.

[0146] By including impurities such as silicon oxide in In-Ga-Zn-O oxide semiconductors, Even if heat treatment is performed at 300 to 600° C., the oxide semiconductor is not crystallized or microcrystalline grains are not generated. The In-Ga-Zn-O based oxide semiconductor layer is used as the channel formation region. In the manufacturing process of thin film transistors, the S value (subthreshold value) is increased by heat treatment. d swing value) and field-effect mobility can be improved, but Even in such cases, it is possible to prevent the thin film transistor from becoming normally on. In addition, even if thermal stress or bias stress is applied to the thin film transistor, This can prevent fluctuations in the voltage.

[0147] In addition to the above, In is also used as an oxide semiconductor for the channel formation region of a thin film transistor. -Sn-Zn-O system, In-Al-Zn-O system, Sn-Ga-Zn-O system, Al-Ga- Zn-O series, Sn-Al-Zn-O series, In-Zn-O series, Sn-Zn-O series, Al-Z nO-based, In-O-based, Sn-O-based, and Zn-O-based oxide semiconductors can be used. That is, impurities that suppress crystallization and maintain the amorphous state are added to these oxide semiconductors. By doing so, the characteristics of the thin film transistor can be stabilized. insulating oxides such as silicon oxide, germanium oxide, and aluminum oxide; Insulating nitrides such as silicon nitride and aluminum nitride, or silicon oxynitride and insulating oxynitrides such as aluminum oxynitride.

[0148] As an example, an oxide semiconductor target containing In, Ga, and Zn (In2O3:Ga2 The semiconductor film 112 can be formed by sputtering using a material such as ZnO (O3:ZnO=1:1:1). The sputtering conditions are, for example, a distance between the substrate 100 and the target of 30 mm to 50 mm. 500mm, pressure 0.1Pa to 2.0Pa, direct current (DC) power 0.25kW to 5.0 kW (when using an 8-inch diameter target), atmosphere is argon atmosphere, oxygen atmosphere, or The semiconductor film 112 may be formed in a mixed atmosphere of argon and oxygen. It is sufficient to set it to about 200 nm.

[0149] The sputtering method mentioned above includes RF sputtering, which uses a high frequency power supply for the sputtering power supply, and D C sputtering method, pulse DC sputtering method that applies a DC bias in a pulsed manner, etc. The RF sputtering method is mainly used to form insulating films, while the DC sputtering method is It is mainly used when forming metal films.

[0150] Alternatively, a multi-target sputtering device capable of installing multiple targets of different materials may be used. In sputtering equipment, different films can be stacked in the same chamber, or It is also possible to simultaneously sputter multiple types of materials to form a single film. - A method using a magnetron sputtering device equipped with a magnetic field generating mechanism inside (magnetron sputtering method) and ECR sputtering method using plasma generated by microwaves. Alternatively, a chemical reaction may be caused between the target material and the sputtering gas components during film formation. Reactive sputtering, which forms compounds from these, and vias, which apply voltage to the substrate during film formation. A sputtering method or the like may also be used.

[0151] Note that the semiconductor material used for the channel layer of the transistor 152 is an oxide semiconductor. For example, the silicon layer (amorphous silicon layer, microcrystalline silicon layer, polycrystalline silicon layer) The transistor 152 may be formed of a silicon layer (crystalline silicon layer or single crystal silicon layer) as a channel layer. Alternatively, a light-transmitting organic semiconductor material may be used as the channel layer of the transistor 152. Alternatively, a carbon nanotube or a compound semiconductor such as gallium arsenide or indium phosphide may be used. The semiconductor layer having light-transmitting properties means that at least the conductive layer 1 forming the wiring 122 The conductive layer 110a forming the wiring 126 may have a light-transmitting property.

[0152] In this embodiment, the formation of the conductive layers (conductive layer 108a, conductive layer 108b, conductive layer 110a) In order to provide the semiconductor film 112 later, the semiconductor film 112 is removed during etching of these conductive layers. Therefore, the semiconductor film 112 can be formed thinly. By providing the semiconductor film 112 thinly, the light transmitting property is improved and a depletion layer is formed. As a result, the S value of the transistor is reduced, and the switching This makes it possible to improve the characteristics and also reduce the off-state current.

[0153] Note that the thickness of the semiconductor film 112 is formed to be thinner than the conductive layers 108a and 108b. However, the present invention is not limited to this.

[0154] Next, a resist mask 165 is formed over the semiconductor film 112. The semiconductor film 112 is etched using the etching agent to form island-shaped semiconductor layers 112a. (See Figure 5(A)).

[0155] The semiconductor layer 112a may be formed before the conductive film 110 is formed (after FIG. 4(A)). In this case, after the step of FIG. 4A is performed, the semiconductor film 112 is formed and etched. By this, an island-shaped semiconductor layer 112a is formed, and then the conductive film 110 is formed. .

[0156] After the semiconductor layer 112a is formed, the semiconductor layer 112a is heated to 100 It is preferable to carry out heat treatment at a temperature of from 200 to 400°C. For example, Heat treatment can be performed at 350°C for 1 hour in a nitrogen atmosphere. The semiconductor layer 112a is rearranged at the atomic level. This heat treatment (including photo-annealing) is advantageous in that it can release the strain that inhibits the movement of carriers in the island-shaped semiconductor layer 112a. It is important to note that the timing of the above heat treatment is as follows: There is no particular limitation.

[0157] Next, the semiconductor layer 112a, the wiring 126, the electrode 136, the electrode 138, and the conductive layer 108c are covered with The insulating layer 114 is formed in this manner (see FIG. 5(B)).

[0158] The insulating layer 114 is formed of a material containing oxygen or nitrogen, such as silicon oxide, silicon nitride, silicon oxynitride, or silicon nitride oxide. insulating films, carbon-containing films such as DLC (diamond-like carbon), epoxy, Polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, etc. A film made of a siloxane material such as a polymeric material or a siloxane resin is provided in a single layer or laminate structure. It is possible.

[0159] The insulating layer 114 can also function as a color filter. By providing a color filter on the 00 side, it is not necessary to provide a color filter on the opposing substrate side. This eliminates the need for margins to adjust the positions of the two boards, allowing for a Manufacturing can be facilitated.

[0160] Next, the conductive layer 116 is formed over the insulating layer 114 (see FIG. 5C). The conductive layer 108c can function as a pixel electrode and is formed to be electrically connected to the conductive layer 108c. do.

[0161] The conductive layer 116 can be formed using a light-transmitting material. Examples of the material include indium tin oxide (InTinOxide). ITO), indium tin oxide with silicon oxide (ITSO), organic indium, organic tin In addition, zinc oxide (ZnO) and the like can be used. Indium Zinc Oxide (IZO), zinc oxide with gallium (Ga) Doped, tin oxide (SnO2), indium oxide with tungsten oxide, acid Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, Indium tin oxide containing titanium may also be used. Therefore, it can be formed in a single layer structure or a laminated structure. It is desirable to make the light transmittance of all of the multiple films sufficiently high. In order to improve the light transmittance, the conductive layer 116 is formed thinner than the conductive layers 102a and 108a. However, the present invention is not limited to this.

[0162] Through the above steps, a semiconductor device can be manufactured. In this way, a light-transmitting transistor 152 and a light-transmitting storage capacitor portion 154 are formed. Therefore, even when a transistor or a capacitor is disposed in a pixel, Since light can be transmitted through the area where the transistor and the capacitor are formed, Therefore, the aperture ratio can be improved. The wiring connecting the transistors is made of a material with low resistivity and high conductivity. This reduces signal waveform distortion and voltage drops due to wiring resistance. do.

[0163] In this embodiment, the semiconductor layer 112a is provided on the electrode 136 and the electrode 138. However, the present invention is not limited to this. For example, the semiconductor layer 112 Alternatively, a structure (channel etch type) may be used in which electrodes 136 and 138 are provided on the substrate a (see FIG. 4). 5). Note that FIG. 45(A) is a top view, and FIG. 45(B) is a view of the A -B corresponds to the cross section.

[0164] The structure shown in FIG. 45 is the same as that shown in FIG. 3(E), except that the semiconductor film 112 is formed on the insulating layer 106. After patterning, the conductive film 108 is formed.

[0165] In the structure shown in FIG. 45, a film functioning as a channel protection film is formed on the semiconductor layer 112a. A structure (channel protection type) in which an insulating layer 127 is provided may be used (see FIG. 46(A)). By providing the layer 127, the semiconductor layer 112a can be prevented from being damaged when the conductive film 108 is patterned. can be protected.

[0166] (Embodiment 2) In this embodiment mode, a manufacturing method of a semiconductor device different from that in the above-described Embodiment Mode 1 will be described with reference to the drawings. Specifically, the following will be described in relation to the case where a semiconductor device is manufactured using a multi-tone mask. Note that the manufacturing process of the semiconductor device in this embodiment mode is the same as that of the embodiment mode in most parts. Therefore, in the following, we will omit the overlapping parts and focus on the differences. This will be explained in detail.

[0167] First, a conductive film 102 is formed on a substrate 100, and then a conductive film 104 is formed on the conductive film 102. A base insulating film may be provided between the substrate 100 and the conductive film 102 (see FIG. 7(A)). .

[0168] Next, resist masks 171a to 171c are formed over the conductive film 104 (see FIG. 7B). ).

[0169] The resist masks 171a to 171c are formed by using a multi-tone mask, and have different thicknesses. A resist mask can be selectively formed.

[0170] A multi-tone mask is a mask that can perform exposure with multiple levels of light intensity. Representative examples include: Exposure is performed with three levels of light intensity: exposed area, semi-exposed area, and unexposed area. By doing so, a single exposure and development process can be performed to produce a film having multiple (typically two) thicknesses. A resist mask can be formed. Therefore, by using a multi-tone mask, The number of masks can be reduced. The light transmittance in this case will be explained.

[0171] FIG. 6 shows a cross section of a typical multi-tone mask. FIG. 6(A-1) shows a gray-tone mask 40. 6(B-1) shows the case where a half-tone mask 414 is used. are.

[0172] The gray-tone mask 403 shown in FIG. 6(A-1) is a light-shielding layer on a light-transmitting substrate 400. and a diffraction grating 402 formed by a pattern of the light-shielding layer. It is composed of:

[0173] The diffraction grating 402 is made up of slits and dots spaced at intervals below the resolution limit of the light used for exposure. The light transmittance is controlled by providing a mesh or the like. The slits, dots or meshes may be periodic or non-periodic. may be.

[0174] The light-transmitting substrate 400 may be made of quartz or the like. The light-shielding layer constituting the grating 402 may be formed using a metal film, and preferably made of chromium or is provided by chromium oxide or the like.

[0175] When the gray-tone mask 403 is irradiated with light for exposure, as shown in FIG. 6(A-2), As shown, the light transmittance in the area overlapping the light shielding portion 401 is 0%, and the light transmittance in the area overlapping the light shielding portion 401 or the diffraction grating 402 is 0%. The light transmittance in the area where the grating 402 is not provided can be 100%. The transmittance of the diffraction grating 402 is generally in the range of 10% to 70%. The spacing can be adjusted by adjusting the spacing of the dots or meshes.

[0176] The halftone mask 414 shown in FIG. 6(B-1) is a semi-transparent mask formed on a light-transmitting substrate 411. The light-transmitting portion 412 is made of a light-transmitting layer, and the light-shielding portion 413 is made of a light-shielding layer. It is being done.

[0177] The semi-transparent portion 412 is a layer of MoSiN, MoSi, MoSiO, MoSiON, CrSi, etc. The light-shielding portion 413 can be formed using the same material as the light-shielding layer of the gray-tone mask. It may be formed using a metal film, preferably chromium or chromium oxide.

[0178] When the halftone mask 414 is irradiated with light for exposure, as shown in FIG. 6(B-2), As shown, the light transmittance in the area overlapping the light-shielding portion 413 is 0%, and the light transmittance in the area overlapping the light-shielding portion 413 or the semi-transparent portion is 0%. The light transmittance in the area where the light portion 412 is not provided can be 100%. The light transmittance of the semi-transparent portion 412 is generally in the range of 10% to 70%. The thickness can be adjusted by the type or the film thickness to be formed.

[0179] As described above, by using a multi-tone mask, exposed portions, intermediate exposed portions, and unexposed portions can be obtained. A mask with three exposure levels can be formed, and a single exposure and development process can be performed. A resist mask having regions of multiple (typically two) thicknesses can be formed. Therefore, by using a multi-tone mask, the number of photomasks can be reduced. do.

[0180] FIG. 7B shows a case where a halftone mask is used as the multi-tone mask. The halftone mask comprises a light-transmitting substrate 180 and a light-shielding layer provided on the substrate 180. 181a, 181c and semi-transparent layers 181b, 181d. On the film 104, a thick resist mask 171a, a thin resist mask 171b, and a thick portion are formed. A resist mask 171c having a thin portion is formed.

[0181] Next, resist masks 171a to 171c are used to remove impurities from the conductive films 102 and 104. The necessary portions are etched to form the conductive layer 102a, the conductive layer 102b, the conductive layer 104a', and the conductive layer 104b' is formed (see FIG. 7(C)).

[0182] Next, the resist masks 171a to 171c are subjected to ashing using oxygen plasma. The resist masks 171a to 171c are ashed with oxygen plasma. As a result, the resist mask 171b is removed, and the conductive layer 102a is left unremoved. Also, the resist masks 171a and 171c are shrunk, and the resist The resist masks 171a' and 171c' remain (see FIG. 8(A)). By using a multi-tone mask as a resist mask, an additional resist mask can be used. This eliminates the need for a tungsten carbide (TTA) process, thereby simplifying the process.

[0183] Next, the exposed conductive layers 104a' and 104b' are removed using resist masks 171a' and 171c'. The conductive layer 104b' is etched to form the conductive layer 104a and the conductive layer 104b. In this case, a conductive layer 102a that functions as the electrode 132 is formed on the conductive layer 102a (see FIG. 8B). The conductive layer 104a' is formed on the wiring 124, and the conductive layer 104b' is formed on the wiring 124 in the region where the pixel portion is to be disposed. The conductive layer 104b' is removed.

[0184] As a result, the electrode 132 is formed of the light-transmitting conductive layer 102a, and the wiring 122 is formed of the light-transmitting conductive layer 102b. and a conductive layer 104a having a lower resistance than the conductive layer 102a. It is formed by the structure.

[0185] In this manner, the conductive layer 102a functioning as the electrode 132 is formed using a light-transmitting material. This makes it possible to improve the aperture ratio of the pixel portion. The conductive layer to be used is the conductive layer (here, the conductive layer 102a) that constitutes the electrode 132, and the conductive layer By forming the conductive layer 104a using a metal material having a lower resistivity than the conductive layer 102a, This reduces wiring resistance and waveform distortion, resulting in lower power consumption. In addition, the wiring 122 may be formed by using a conductive layer (here, a conductive layer) having a light-shielding property. By using the conductive layer 104a), it is possible to shield the areas between adjacent pixels from light. Therefore, the black matrix can be omitted. However, this is not limitative. .

[0186] In addition, by using a multi-tone mask, the conductive layer 102a and the conductive layer 102b that will become the wiring 122 are 4a, the surface area of ​​each layer is different. The surface area of ​​the conductive layer 104a is larger than the surface area of ​​the conductive layer 102b. The surface area of ​​the conductive layer 104b is larger than the surface area of ​​the conductive layer 104b.

[0187] Next, a conductive layer 102a, a conductive layer 102b, a conductive layer 104a, and a conductive layer 104b are formed on the conductive layer 102a. After the insulating layer 106 is formed, a conductive film 108 and a conductive film 110 are formed in this order on the insulating layer 106. It is formed by laminating layers (see FIG. 8(C)).

[0188] Next, resist masks 172a to 172d are formed over the conductive film 110 (see FIG. 9A). ).

[0189] The resist masks 172a to 172d are formed with different thicknesses by using a multi-tone mask. A resist mask can be formed.

[0190] FIG. 9A shows a case where a halftone mask is used as the multi-tone mask. The half-tone mask is made up of a light-transmitting substrate 182 and a semi-transmitting substrate 183 provided on the substrate 182. The light-shielding layers 183a, 183d and the light-shielding layers 183b, 183c, 183e are arranged in a layered manner. Therefore, a thick resist mask 172c, a thin resist mask 172b, and a thin resist mask 172c are formed on the conductive film 110. 172d, a resist mask 172a having thick and thin portions is formed.

[0191] Next, resist masks 172a to 172d are used to remove impurities from the conductive films 108 and 110. The necessary portions are etched to form conductive layers 108a to 108c and conductive layers 110a' to 110c. 110c' is formed (see FIG. 9(B)).

[0192] Next, the resist masks 172a to 172d are subjected to ashing using oxygen plasma. The resist masks 172a to 172d are ashed with oxygen plasma. As a result, the resist masks 172b and 172d are removed, and the conductive layers 110b' and 110c are Furthermore, the resist masks 172a and 172c are shrunk, and the resist mask 17 2a' and 172c' (see FIG. 9(C)). By using a multi-tone mask, an additional resist mask is not required. This simplifies the process.

[0193] Next, using resist masks 172a' and 172c', a part of the conductive layer 110a', the conductive Conductive layer 110a is formed by etching layer 110b' and conductive layer 110c'. In this case, the conductive layer 110a' formed on the conductive layer 108a is A portion of the conductive layer 110b' formed on the conductive layer 108b and a portion of the conductive layer 110c formed on the conductive layer 108c are The conductive layer 110c' is then removed.

[0194] As a result, the electrode 136 is formed of the light-transmitting conductive layer 108a, and the wiring 126 is formed of the light-transmitting conductive layer 108b. and a conductive layer 110a having a lower resistance than the conductive layer 108a. The electrode 138 is formed of a light-transmitting conductive layer 108b.

[0195] Thus, the conductive layer 108a functions as the electrode 136 and the conductive layer 108b functions as the electrode 138. By forming the conductive layer 108b from a light-transmitting material, the aperture ratio of the pixel portion can be improved. In addition, the conductive layer that functions as the wiring 126 can be formed by using a conductive material that forms the electrode 136. a conductive layer (here, conductive layer 108a) and a metal material having a lower resistivity than the conductive layer 108a. By forming the conductive layer 110a using the above-mentioned method, the wiring resistance can be reduced and the waveform can be prevented from being rounded. As a result, power consumption can be reduced. By using a conductive layer (here, the conductive layer 110a) having a light-shielding property as a The area between adjacent pixels can be shielded from light.

[0196] Next, an oxide semiconductor film is formed to cover the conductive layers 108a and 108b, the insulating layer 106, and the like. Then, the oxide semiconductor film is etched to form island-shaped semiconductor layers 112a. (See FIG. 10(B)).

[0197] Next, the semiconductor layer 112a, the wiring 126, the electrode 136, the electrode 138, and the conductive layer 108c are covered with After forming the insulating layer 114 as described above, a conductive layer 116 is formed on the insulating layer 114 (see FIG. 10(C)). The conductive layer 116 is formed to be electrically connected to the conductive layer 108c. .

[0198] By the above steps, a semiconductor device can be manufactured. This creates a mask with three exposure levels: exposed, intermediately exposed, and unexposed. It is possible to form regions of multiple thicknesses (typically two types) by a single exposure and development process. Therefore, by using a multi-tone mask, This allows the number of photomasks to be reduced.

[0199] In this embodiment, both the process of forming the gate wiring and the process of forming the source wiring are performed. The case where a multi-tone mask is used in both processes has been explained. A multi-tone mask may be used in either the step of forming the source wiring or the step of forming the source wiring.

[0200] (Embodiment 3) In this embodiment mode, a semiconductor device different from that in the first embodiment mode will be described with reference to the drawings. The configuration of the semiconductor device shown below is similar in many respects to that shown in FIGS. 1 and 2. Therefore, in the following, we will omit overlapping parts and explain only the differences.

[0201] Other structural examples of the semiconductor device described in the first embodiment are shown in FIGS. 11 and 12. 12, FIG. 11 shows a top view, and FIG. 12(A) shows a cross section between AB in FIG. 12(B) corresponds to the cross section between C and D in FIG.

[0202] The semiconductor device shown in FIGS. 11 and 12 is the semiconductor device shown in FIGS. 1 and 2, except that the gate wiring The wire 120 is formed by laminating a light-transmitting conductive layer 102a over a conductive layer 104a. 126 shows a case where a light-transmitting conductive layer 108a is stacked on a conductive film 110. That is, in the structure shown in FIGS. 1 and 2, the gate wiring 120 and the wiring 126 The laminated structure of the conductive layers in the first embodiment is reversed.

[0203] In the configuration shown in FIGS. 11 and 12, the electrode 132 electrically connected to the gate wiring 120 The electrode 136 is formed of a light-transmitting conductive layer 102a and is electrically connected to the wiring 126. The light-transmitting conductive layer 108a is formed.

[0204] In addition to the configurations shown in FIGS. 11 and 12, the wiring 12 The laminated structure of the conductive layers in either the wiring 126 or the wiring 2 may be reversed. stomach.

[0205] 11 and 12, the semiconductor layer 112a is provided on the electrode 136 and the electrode 138. However, the present invention is not limited to this. For example, the semiconductor layer 11 2a (channel etch type) (see FIG. 47). Note that FIG. 47(A) is a top view, and FIG. 47(B) is a view of the It corresponds to the cross section between AB.

[0206] In the structure shown in FIG. 47, a film functioning as a channel protection film is formed on the semiconductor layer 112a. A structure (channel protection type) in which an insulating layer 127 is provided may be used (see FIG. 46B).

[0207] Next, another configuration example of the semiconductor device described in the first embodiment is shown in FIG. 13(A) shows a top view, and FIG. 13(B) shows the state between A and B in FIG. 13(A). corresponds to the cross section.

[0208] The semiconductor device shown in FIG. 13 is the semiconductor device shown in FIGS. 1 and 2, except that the semiconductor layer 112a is provided between the conductive layer 108a and the conductive layer 110a, which form the wiring 126. After the conductive layer 108a is formed, the semiconductor layer 112a is formed before the conductive layer 110a is formed. Complete.

[0209] As shown in FIG. 13, a semiconductor layer 112a is provided between the conductive layer 108a and the conductive layer 110a. This increases the contact area between the electrode 136 and the wiring 126 and the semiconductor layer 112a, The contact resistance can be reduced.

[0210] Next, another configuration example of the semiconductor device described in the first embodiment is shown in FIG. 14(A) shows a top view, and FIG. 14(B) shows the relationship between C and D in FIG. 14(A). corresponds to the cross section.

[0211] In the semiconductor device shown in FIG. 14, a conductive layer that becomes an electrode of the storage capacitor 154 is formed in the wiring 124. Below the contact hole 125 formed when connecting 108c and the conductive layer 116 In this case, a conductive layer (conductive layer 104b) having a light-shielding property is provided in the region where the light-shielding layer 104 is located. That is, the configuration shown in FIG. 14 is the same as the configuration shown in FIGS. 1 and 2 except that the pixel section 150 The conductive layer 102b and the conductive layer 102c having a light-transmitting property are also provided as the wiring 124 in the region where the conductive layer 102b is provided. The conductive layer 104b has a lower resistance than the conductive layer 102b and has a light-shielding property. It is.

[0212] Usually, the conductive layer 108c and the conductive layer 116 are electrically connected through a contact hole 125. In this case, a recess is formed on the surface of the conductive layer 116 due to the contact hole 125. As a result, the alignment of the liquid crystal molecules provided on the recesses of the conductive layer 116 is disturbed, This may cause light leakage.

[0213] Therefore, as shown in FIG. 14, a film having a light-shielding property is selected below the contact hole 125. By forming the recesses on the surface of the conductive layer 116, it is possible to reduce light leakage due to the recesses. In addition, the conductive layer 104b having a lower resistance than the conductive layer 102b is used as a light-shielding film. By using this, the resistance of the wiring 124 can be reduced. The contact holes 125 are formed at positions concentrated at one end of the wiring 124, By providing the conductive layer 104b on one end side of the wiring 124, the aperture ratio of the pixel section 150 can be increased. can be improved.

[0214] The shape of the conductive layer 104b is such that, if it is disposed below the contact hole 125, 14(A) is not limited to the shape shown in FIG. If it is desired to reduce the resistance, the conductive layer 124 is In this case, the contact hole 12 is formed as described above. 5 are provided in a concentrated manner on one end side of the wiring 124, and the conductive layer 104b is also provided on one end side of the wiring 124. By providing the insulating film on the side of the pixel section 150, the aperture ratio of the pixel section 150 can be improved.

[0215] In addition, in order to reduce light leakage and further improve the aperture ratio of the pixel section 150, In the direction parallel to the line 124, the conductive layer 104b is not electrically connected but is contacted. The island-shaped conductive layer 104b may be provided in the region overlapping the hole 125 (FIG. 1). 5(A) and (B). In FIG. 15, FIG. 15(A) shows a top view, and FIG. (B) corresponds to the cross section between CD in FIG. 15(A).

[0216] 15, the wiring 124 is formed under the contact hole 125. A light-shielding film is provided on the other side, and the area other than the wiring 124 (the area where the conductive layer 108b and the conductive layer 116 are connected) is A light-shielding film may be provided below the contact hole formed in the region (region connected to the substrate).

[0217] Next, another configuration example of the semiconductor device described in the first embodiment is shown in FIG. 16(A) shows a top view, and FIG. 16(B) shows the state between A and B in FIG. 16(A). corresponds to the cross section.

[0218] The semiconductor device shown in FIG. 16 has a high conductivity region (n+ region 11) in a part of the semiconductor layer 112a. 3a, 113b) are provided, and the electrodes 136 and 138 are overlapped with the electrode 132. The n+ regions 113a and 113b are formed in the semiconductor layer 112. In a, it can be provided in the region connected to the electrode 136 and the region connected to the electrode 138. The n+ regions 113a and 113b may be provided so as to overlap with the electrode 132. Alternatively, they may be provided so as not to overlap.

[0219] The n+ regions 113a and 113b are formed by selectively adding hydrogen to the semiconductor layer 112a. The hydrogen can be formed in the portion of the semiconductor layer 112a where the electrical conductivity is desired to be increased. It can be added.

[0220] For example, the semiconductor layer 112a is formed using an oxide semiconductor containing In, M, or Zn. After that, a resist mask 168 is formed on a part of the semiconductor layer 112a (see FIG. 36(A)). By adding hydrogen ions, n+ regions 113a and 113b are formed in the semiconductor layer 112a. It is possible to form (see FIG. 36(B)).

[0221] In this way, the electrodes 136 and 138 are arranged so as not to overlap with the electrode 132. This suppresses the parasitic capacitance generated between the electrode 136 and the electrode 132 and between the electrode 138 and the electrode 136. This can be done.

[0222] In the above-described configuration, the transistor 152 has a structure in which a The case where the top surface shape of the channel formation region formed in the semiconductor device is parallel is shown in FIG. In addition, as shown in FIG. 17, the top view of the channel formation region is a C-shaped (U-shaped) transistor. In this case, the conductive layer 108a functioning as the electrode 136 may be formed in a C-shape or The conductive layer 108b is formed in a U-shape and is arranged to surround the conductive layer 108b, which functions as the electrode 138. By using such a configuration, the transistor 15 2 can increase the channel width.

[0223] In the above-described configuration, a semiconductor is formed on the electrode 132 electrically connected to the wiring 122. Although the case where the layer 112a is provided has been shown, the present invention is not limited to this. The semiconductor layer 112a may be provided on the wiring 122. In this case, the wiring 122 is The wiring 122 also functions as a gate electrode. Of course, the wiring 122 can be formed by the conductive layer 102a and the conductive layer 104a having light-transmitting properties. The conductive layer 104a may have a laminated structure. This prevents the semiconductor layer 112a, which will be the channel formation region, from being irradiated with light. This structure uses a material whose characteristics are affected by light as the semiconductor layer that forms the channel. This is effective when using a fee.

[0224] 37, the wiring 122 may be formed only from the conductive layer 104a. The wiring 126 may be formed only from the conductive layer 110a. It may be formed only by

[0225] 38, in the wiring 122, a part of the conductive layer 108a (transistor 152) (the portion used as the electrode 132). In the wiring 126, a part of the conductive layer 110a (as an electrode 136 of the transistor 152) is It may be configured to be selectively provided in the portion (part used for the purpose).

[0226] In addition, although the conductive layer 102a is provided below the conductive layer 104a in FIG. 38, Alternatively, the conductive layer 102a may be provided on the conductive layer 104a (see FIG. 39). In addition, the conductive layer 108a may be provided on the conductive layer 110a (see FIG. 39).

[0227] In the above-described configuration, the storage capacitor 154 is provided using the wiring 124. As shown in FIG. 40, the wiring 124 is not provided, and the conductive layer 108c and the adjacent The conductive layer 102a constituting the wiring 122 of the adjacent pixel is used as an electrode of the storage capacitor 154. The configuration may be as follows.

[0228] 13 to 17 and 37 to 40, semiconductors are formed on the electrodes 136 and 138. Although the structure in which the layer 112a is provided (bottom contact type) has been shown, the present invention is not limited to this. As shown in FIGS. 45 to 47, the electrodes 136 and 138 are formed on the semiconductor layer 112a. Alternatively, a channel protection film may be formed on the semiconductor layer 112a. Alternatively, a structure (channel protection type) may be provided in which an insulating layer 127 functions as a protective layer.

[0229] (Fourth embodiment) In this embodiment mode, a semiconductor device different from those in the first and second embodiments will be described with reference to the drawings. Specifically, a case where a plurality of transistors are provided in one pixel portion will be described. The configuration of the semiconductor device shown below is similar in many respects to that shown in Figures 1 and 2 above. Therefore, in the following, overlapping parts will be omitted and only the differences will be explained.

[0230] 18 and 19 show a structural example of the semiconductor device described in this embodiment mode. 18 shows a top view, and FIG. 19(A) corresponds to a cross section between AB in FIG. 18. FIG. 19(B) corresponds to the cross section between CD in FIG.

[0231] The semiconductor device shown in FIGS. 18 and 19 includes a switching transistor 152, a driving transistor 153, and a A pixel section 150 provided with a transistor 156 and a storage capacitor section 158, a wiring 122, and a wiring 18 and 19. The configuration shown in FIG. 18 and FIG. 19 is, for example, an EL display. The present invention can be applied to the pixel portion of a display device.

[0232] The transistor 156 has an electrode 232 provided on the substrate 100 and a gate electrode 232 provided on the electrode 232. an insulating layer 106 formed on the insulating layer 106; an electrode 236 and an electrode 238 formed on the insulating layer 106; 106 so as to overlap the electrode 232 and is provided on the electrodes 236 and 238. The semiconductor layer 112b is formed by the metal layer 112a.

[0233] The electrode 232 can function as a gate electrode. The semiconductor layer 112b can function as a source electrode or a drain electrode. The wiring 128 can be formed using an oxide semiconductor. However, it is not limited to these.

[0234] The electrode 232 is formed using a light-transmitting conductive layer 102c. The conductive layer 108b and the conductive layer 138 are electrically connected to each other. Electrical connection to 102c can be made via conductive layer 117.

[0235] The conductive layer 117 can be formed in the same process as the conductive layer 116. After forming the layer 114, a contact hole 118a reaching the conductive layer 108b and a conductive layer 118b are formed. After forming a contact hole 118b reaching O2c, a conductive layer 116 is formed on the insulating layer 114. and a conductive layer 117. The contact holes 118a and 118b are They can be formed in the same step (the same etching process).

[0236] The conductive layer 102c can be formed in the same process as the conductive layer 102a.

[0237] The semiconductor layer 112b can be formed in the same process as the semiconductor layer 112a.

[0238] The electrode 236 is formed using a light-transmitting conductive layer 108d and is electrically connected to the wiring 128. The wiring 128 is configured to have a laminated structure of a conductive layer 108d and a conductive layer 110b. In addition, the conductive layer 108d that constitutes the electrode 236 and the conductive layer 108b that constitutes the wiring 128 are The conductive layer 108d is formed of the same islands.

[0239] 18 and 19, the conductive layer 110b is stacked on the conductive layer 108d as the wiring 128. However, the conductive layer 108d may be laminated on the conductive layer 110b.

[0240] The electrode 238 is formed using a light-transmitting conductive layer 108e. Electrically connected.

[0241] The conductive layers 108d and 108e are formed in the same process as the conductive layers 108a and 108b. The conductive layer 110b can be formed in the same process as the conductive layer 110a. It is possible.

[0242] The storage capacitor 158 has the insulating layer 106 as a dielectric, the conductive layer 102c having light-transmitting properties, and the light-transmitting The conductive layer 108d is configured as an electrode. The electrode 138 of the transistor 152 is electrically connected to the electrode 138 .

[0243] As described above, the transistor 152, the transistor 156, and the storage capacitor 158 are By forming the region where the transistors 152 and 156 are formed from a material having such properties, Since light can be transmitted through the area where the storage capacitor 158 is formed, The aperture ratio of the wiring 122, the wiring 126, and the wiring 128 can be improved. By providing a part of the wiring with a conductive layer made of a metal material with low resistivity, the wiring resistance is reduced. , power consumption can be reduced.

[0244] In addition, the conductive layer 104a constituting the gate wiring, the conductive layer 110a constituting the source wiring, and The conductive layer 110b constituting the wiring 128 is formed using a metal material having a light-shielding property. This reduces the wiring resistance and also allows light shielding between adjacent pixel units. That is, the gate wirings arranged in the row direction, the source wirings and wiring 128 arranged in the column direction This allows the gaps between pixels to be shielded from light without using a black matrix. .

[0245] 18 and 19, the electrical connection between the conductive layer 108b and the conductive layer 102c is shown as the conductive layer 108b. 20, the case where the insulator 17 is used is shown, but the present invention is not limited to this. The conductive layer 102c and the conductive layer 108b are electrically connected to each other through a contact hole 119 formed in the layer 106. In this case, a contact hole 119 is formed in the insulating layer 106. After that, the conductive layer 108b may be formed. In the structure shown in FIG. A conductive layer 116 may also be disposed over the connection region of layer 102c.

[0246] In addition, in this embodiment, the case where two transistors are provided in the pixel portion 150 has been described. This is not limiting. Three or more transistors can be arranged in parallel or in series. .

[0247] In this embodiment, the case where the transistor has a bottom-contact structure is described. However, the present invention is not limited to this. The structure of the transistor may be a channel etch type. It may also be a protection type.

[0248] (Embodiment 5) In this embodiment mode, a display device, which is one mode of a semiconductor device, includes a thin film transistor and a The case where at least a part of the driver circuit and the pixel portion are provided using transistors will be described below. do.

[0249] FIG. 22 shows an example of a block diagram of an active matrix liquid crystal display device, which is an example of a display device. The display device shown in FIG. 22(A) is a pixel display device having a display element on a substrate 5300. a pixel portion 5301 having a plurality of pixels, a scanning line driver circuit 5302 for selecting each pixel, and a It also has a signal line driver circuit 5303 that controls input of a video signal to the pixel.

[0250] The light-emitting display device shown in FIG. 22(B) has a plurality of pixels each having a display element over a substrate 5400. A pixel portion 5401 for selecting each pixel, a first scanning line driver circuit 5402 for selecting each pixel, and a second scanning line driver circuit 5403 for selecting each pixel. A driver circuit 5404 and a signal line driver circuit 5405 for controlling the input of a video signal to a selected pixel 403 and

[0251] In the case where a video signal input to a pixel of the light-emitting display device shown in FIG. 22(B) is in a digital format, When a pixel is turned on, it emits light or does not emit light by switching the transistor on or off. Therefore, gray scale display can be performed using area gray scale or time gray scale. The stacked gray scale method divides one pixel into multiple sub-pixels, and each sub-pixel is independently driven based on a video signal. The time gray scale method is a driving method that displays gray scales by moving the pixel. This is a driving method that displays gradation by controlling the period during which the light is turned on.

[0252] Light-emitting elements have a higher response speed than liquid crystal elements, making them more suitable for time gray scale modulation than liquid crystal elements. When displaying using the time gray scale method, one frame period is divided into multiple sub-frame periods. Then, in accordance with the video signal, the light emitting element of the pixel emits light in each sub-frame period. By dividing the period into multiple subframes, one frame can be The total length of the period during which the pixel emits light during the frame period can be controlled by a video signal, It is possible to display gradations.

[0253] In the light-emitting display device shown in FIG. 22B, two switching TFTs are provided for one pixel. In the case where the first scanning line which is the gate wiring of one of the switching TFTs is arranged, The signal to be input to the first scanning line driver circuit 5402 is generated by the first scanning line driver circuit 5402, and the other switching TFT A signal input to the second scanning line, which is the gate wiring of the second scanning line, is generated by a second scanning line driver circuit 5404. The example shows a signal input to the first scanning line and a signal input to the second scanning line. The signal may be generated by one scanning line driving circuit. The operation of the switching element is controlled by the number of switching TFTs that each pixel has. In this case, multiple scan lines may be provided for each pixel. The signals input to the scanning lines may all be generated by one scanning line driving circuit, or may be generated by a plurality of scanning line driving circuits. It may also be generated by the scan line driver circuit.

[0254] The thin film transistors arranged in the pixel portion of the liquid crystal display device are formed according to the first to fourth embodiments. The thin film transistors shown in the first to fourth embodiments are n-channel TFTs. Therefore, among the driver circuits, one that can be configured with n-channel TFTs is The pixel portion and the thin film transistor are formed on the same substrate.

[0255] In addition, in the light-emitting display device, the driver circuit may be configured with an n-channel TFT. A part of the driver circuit can be formed on the same substrate as the thin film transistor of the pixel portion. In addition, the signal line driver circuit and the scanning line driver circuit are formed by the n-channel TFs shown in the first to fourth embodiments. It is also possible to make it using only T.

[0256] In addition, in the peripheral driving circuits such as the protection circuit, gate driver, and source driver, Therefore, the pixel part is made of transistors and capacitors. In the peripheral drive circuit section, light is transmitted through the transistor. It's not necessary.

[0257] FIG. 23(A) shows the driving section and the thin film transistor formed without using a multi-tone mask. The figure shows a thin film transistor in a pixel portion, and FIG. 23(B) shows a case where the transistor is formed using a multi-tone mask. 1 shows the thin film transistors in the driver section and pixel section.

[0258] When forming a thin film transistor without using a multi-tone mask, the transistor in the driving section The gate electrode is formed of a conductive layer 104a having a higher conductivity than the conductive layer 102a. The conductive layer 110a having higher conductivity than the conductive layer 108a is used as the drain electrode. In the driving section, the gate wiring is provided by the conductive layer 104a, and the source wiring is provided by the conductive layer 104b. The lines may be provided by conductive layer 110a.

[0259] When forming a thin film transistor using a multi-tone mask, the transistor in the driving section The gate electrode is formed of a laminated structure of a conductive layer 102a and a conductive layer 104a, and the source electrode is formed of a conductive layer 104b. A conductive layer 108a and a conductive layer 110a are stacked as a drain electrode. The conductive layer 8b and the conductive layer 110a can be provided as a laminated structure.

[0260] In FIG. 23, the transistors in the pixel portion have the structure shown in the above embodiment mode. This can be done.

[0261] The above-mentioned driving circuit is not limited to liquid crystal display devices and light-emitting display devices, but may also be used in It may also be used in electronic paper, which uses electrically connected elements to drive electronic ink. Electronic paper is also called an electrophoretic display (electrophoretic display) and has the same properties as paper. It achieves the same readability, consumes less power than other display devices, and is thin and lightweight. It is possible to do this.

[0262] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0263] (Embodiment 6) In this embodiment mode, a thin film transistor is used in a pixel portion and further in a driver circuit to have a display function. A case where a semiconductor device (also called a display device) is manufactured using a thin film transistor will be described. The transistor and part or the whole of the driver circuit are formed on the same substrate as the pixel section, On-panel formation is possible.

[0264] The display device includes a display element. The display element includes a liquid crystal element (also called a liquid crystal display element), a light-emitting element, A light-emitting element (also called a light-emitting display element) can be used. This category includes elements whose brightness is controlled by the light emitted from the light source, specifically inorganic EL (Electroluminescent) luminescence elements, organic EL elements, etc. Also, electronic ink A display medium whose contrast changes due to an electrical effect can also be applied.

[0265] The display device also includes a panel in which a display element is sealed, and a controller for the panel. and a module in which an IC or the like including the above is mounted. In the process of manufacturing the display element, the element substrate corresponds to one form before the display element is completed, The element substrate includes means for supplying a current to each of the plurality of pixels. Specifically, only the pixel electrodes of the display element may be formed, or the pixel electrodes and After forming a conductive film, the state before etching to form a pixel electrode is shown. is fine, and all forms apply.

[0266] In this specification, the term "display device" refers to an image display device, a display device, or an optical device. It also refers to connectors, such as FPC (Flexible Printed Circuit) integrated circuit) or TAB (Tape Automated Bon ding) tape or TCP (Tape Carrier Package) Modules with printed wiring boards attached to the end of TAB tape or TCP or the display element is mounted on an IC (integrated circuit) by the COG (Chip On Glass) method. The display device also includes all modules in which the display device (circuit) is directly mounted.

[0267] In this embodiment, a liquid crystal display device will be described as an example of the semiconductor device. The appearance and cross section of the liquid crystal display panel corresponding to this state will be described with reference to FIG. The semiconductor layer is an In-Ga-Zn-O based non-single crystal film formed on a first substrate 4001. Highly reliable thin film transistors 4010 and 4011 and a liquid crystal element 4013 are included. 4005. The panel is sealed between the second substrate 4006 and the panel by a sealant 4005. 24(B) corresponds to a cross-sectional view taken along line MN in FIGS. 24(A1) and 24(A2).

[0268] A pixel portion 4002 and a scanning line driver circuit 4004 are provided on a first substrate 4001. In this way, a sealing material 4005 is provided. A second substrate 4006 is provided on the path 4004. The line driver circuit 4004 is made up of a first substrate 4001, a sealing material 4005, and a second substrate 4006. The first substrate 4001 is sealed together with the liquid crystal layer 4008. In a region different from the region surrounded by the material 4005, a single crystal is formed on a separately prepared substrate. A signal line driver circuit 4003 formed of a semiconductor film or a polycrystalline semiconductor film is mounted.

[0269] The method of connecting the separately formed drive circuit is not particularly limited, and may be a COG method, Wire bonding or TAB method can be used. is an example of mounting a signal line driver circuit 4003 by the COG method, and FIG. 24(A2) is This is an example in which a signal line driver circuit 4003 is mounted by the TAB method.

[0270] In addition, a pixel portion 4002 and a scanning line driver circuit 4004 are provided on a first substrate 4001. 24(B), the thin film transistor included in the pixel portion 4002 a thin film transistor 4010 and a thin film transistor 401 included in a scanning line driver circuit 4004 The insulating layers 4020 and 4011 are formed on the thin film transistors 4010 and 4011. 21 is provided.

[0271] The thin film transistors 4010 and 4011 are made of an In-Ga-Zn-O based non-single crystal film as a semiconductor layer. A highly reliable thin film transistor including the above-mentioned The thin film transistors 4010 and 4011 are n-channel thin film transistors.

[0272] The pixel electrode layer 4030 of the liquid crystal element 4013 is connected to the thin film transistor 4010. The counter electrode layer 4031 of the liquid crystal element 4013 is electrically connected to the second substrate 40. 06. The pixel electrode layer 4030, the counter electrode layer 4031, and the liquid crystal layer 4008 are The overlapping portion corresponds to the liquid crystal element 4013. The electrode layer 4031 is provided with insulating layers 4032 and 4033 which function as alignment films. A liquid crystal layer 4008 is sandwiched between insulating layers 4032 and 4033 .

[0273] The first substrate 4001 and the second substrate 4006 may be made of glass or metal (typically, stainless steel). Stainless steel, ceramics, and plastics can be used. , FRP (Fiberglass-Reinforced Plastics) board, PV F (polyvinyl fluoride) film, polyester film, polyester film Alternatively, acrylic resin film can be used. Aluminum foil can also be used as a PVF film. A sheet sandwiched between films or polyester films can also be used.

[0274] Also, 4035 is a columnar spacer obtained by selectively etching the insulating film. In order to control the distance (cell gap) between the pixel electrode layer 4030 and the counter electrode layer 4031, A spherical spacer may be used. 1 is electrically connected to a common potential line provided on the same substrate as the thin film transistor 4010. The common connection portion is used to connect the counter electrode layer 4 to the substrate via conductive particles disposed between the pair of substrates. The conductive particles can electrically connect the sealing material 4 to the common potential line. Included in 005.

[0275] Alternatively, a liquid crystal that exhibits a blue phase without using an alignment film may be used. The blue phase is one of the liquid crystal phases. When the temperature of cholesteric liquid crystal is increased, the phase immediately transitions from the cholesteric phase to the isotropic phase. The blue phase appears only in a narrow temperature range, so the temperature range needs to be improved. In order to achieve this, a liquid crystal composition containing 5% by weight or more of a chiral agent is used for the liquid crystal layer 4008. The liquid crystal composition containing the liquid crystal exhibiting the blue phase and the chiral agent has a response speed of 10 μs to It is optically isotropic, requiring no alignment treatment, and has little viewing angle dependency. stomach.

[0276] The liquid crystal display device shown in this embodiment is an example of a transmission type liquid crystal display device. The device can be applied to both reflective and semi-transmissive liquid crystal display devices.

[0277] In addition, in the liquid crystal display device described in this embodiment mode, a polarizing plate is provided on the outer side (viewing side) of the substrate, and In this example, a colored layer and an electrode layer for a display element are provided on the side of the substrate in this order. The laminated structure of the polarizing plate and the colored layer is not limited to the present embodiment, and the polarizing plate may be provided on the The thickness may be appropriately set depending on the material of the colored layer and the manufacturing process conditions. A light-shielding film that functions as a light shielding film may be provided.

[0278] In this embodiment, in order to reduce the surface unevenness of the thin film transistor, To improve the reliability of thin film transistors, the film functions as a protective film and a planarizing insulating film. The insulating layer 4020 and the insulating layer 4021 are used to cover the insulating layer 4020 and the insulating layer 4021. is intended to prevent the intrusion of polluting impurities such as organic matter, metals, and water vapor floating in the air. The protective film is preferably a silicon oxide film, a silicon nitride film, or the like, which is formed by sputtering. Silicon film, silicon oxynitride film, silicon nitride oxide film, aluminum oxide film, aluminum nitride Aluminum nitride film, aluminum oxide nitride film, or aluminum nitride oxide film, or a single layer or laminated layer. In this embodiment, an example in which the protective film is formed by sputtering is shown, but the method is not particularly limited. The insulating film may be formed by various methods.

[0279] Here, an insulating layer 4020 having a stacked structure is formed as a protective film. As the first layer of the silicon dioxide film, a silicon dioxide film is formed by sputtering. When a silicon film is used, the aluminum film used as the source electrode layer and the drain electrode layer can be It is effective in preventing locking.

[0280] In addition, an insulating layer is formed as the second layer of the protective film. A silicon nitride film is formed by sputtering. When this happens, mobile ions such as sodium penetrate into the semiconductor region and change the electrical properties of the TFT. This can prevent the problem of

[0281] After forming the protective film, the semiconductor layer may be annealed (at 300°C to 400°C). stomach.

[0282] An insulating layer 4021 is formed as a planarization insulating film. Heat-resistant organic compounds such as amide, acrylic, benzocyclobutene, polyamide, and epoxy. In addition to the above organic materials, low-k materials can also be used. , siloxane resin, PSG (phosphorus glass), BPSG (borophosphorus glass), etc. In addition, by stacking multiple insulating films made of these materials, it is possible to obtain an insulating layer. 4021 may be formed.

[0283] Siloxane-based resin is a Si-OS compound formed using siloxane-based materials as starting materials. The siloxane resin corresponds to a resin containing an i bond. Alternatively, an organic group having a fluoro group may be used. That's fine.

[0284] The method for forming the insulating layer 4021 is not particularly limited, and may be a sputtering method, an SOG method, or the like, depending on the material. , spin coating, dip coating, spray coating, droplet ejection method (inkjet method, screen printing, offset printing, etc.), doctor knife, roll coater, curtain coater, knife When the insulating layer 4021 is formed using a material liquid, The semiconductor layer may be annealed (at 300°C to 400°C) at the same time as the step of annealing. By combining the firing process of the edge layer 4021 with the annealing of the semiconductor layer, semiconductor devices can be efficiently manufactured. It becomes possible to do this.

[0285] The pixel electrode layer 4030 and the counter electrode layer 4031 are made of indium oxide containing tungsten oxide. , indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, Indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO), Translucent materials such as indium zinc oxide and indium tin oxide doped with silicon oxide A conductive material can be used.

[0286] The pixel electrode layer 4030 and the counter electrode layer 4031 are made of a conductive polymer (conductive polymer The conductive composition can be used to form the conductive film. The formed pixel electrode preferably has a light transmittance of 70% or more at a wavelength of 550 nm. In addition, the resistivity of the conductive polymer contained in the conductive composition is 0.1 Ω·cm or less. preferable.

[0287] As the conductive polymer, a so-called π-electron conjugated conductive polymer can be used. For example, polyaniline or its derivatives, polypyrrole or its derivatives, polythiophene or or a derivative thereof, or a copolymer of two or more of these.

[0288] A signal line driver circuit 4003 and a scanning line driver circuit 4004 or a pixel section 4 Various signals and potentials applied to 002 are supplied from FPC4018.

[0289] In this embodiment, the connection terminal electrode 4015 is connected to the pixel electrode layer 40 of the liquid crystal element 4013. The terminal electrode 4016 is formed from the same conductive film as the thin film transistors 4010 and 40 The source electrode layer and the drain electrode layer 11 are formed of the same conductive film.

[0290] The connection terminal electrode 4015 is connected to the terminal of the FPC 4018 via the anisotropic conductive film 4019. are electrically connected.

[0291] In FIG. 24, a signal line driver circuit 4003 is separately formed and mounted on a first substrate 4001. However, this embodiment is not limited to this configuration. Alternatively, a part of the signal line driver circuit or a part of the scanning line driver circuit may be formed separately and mounted. Alternatively, the circuit board may be formed separately and mounted.

[0292] FIG. 25 shows a liquid crystal display module, which corresponds to one form of a semiconductor device, using a TFT substrate 2600. An example of the configuration is shown below.

[0293] FIG. 25 shows an example of a liquid crystal display module, in which a TFT substrate 2600 and an opposing substrate 2601 are connected. The element layer 2603 including the TFT and the like and the liquid crystal layer are fixed to the substrate 2602. A display element 2604 and a colored layer 2605 are provided to form a display area. is required for color display, and in the case of the RGB method, it corresponds to each color of red, green, and blue. A colored layer is provided corresponding to each pixel. On the outside, a polarizing plate 2606, a polarizing plate 2607, and a diffusion plate 2613 are arranged. It is composed of a cathode ray tube 2610 and a reflector 2611, and a circuit board 2612 is a flexible wiring board. The wiring board 2609 is connected to the wiring circuit section 2608 of the TFT substrate 2600, and the controller It also incorporates external circuits such as a polarizing plate and a power supply circuit. The layers may be laminated with a retardation film interposed therebetween.

[0294] The LCD module is available in TN (Twisted Nematic) mode, IPS (In-Plane Switching) mode, n-Plane-Switching mode, FFS (Fringe Field Switching) Switching mode, MVA (Multi-domain Vertical A alignment) mode, PVA(Patterned Vertical Alignment) mode nment), ASM(Axially Symmetric aligned Mic) ro-cell) mode, OCB(Optical Compensated Bire) fringence mode, FLC (Ferroelectric Liquid Crystal Crystal mode, AFLC (AntiFerroelectric Liquid Crystal) can be used.

[0295] Through the above steps, a highly reliable liquid crystal display device can be manufactured as a semiconductor device. .

[0296] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0297] (Embodiment 7) In this embodiment, electronic paper is shown as an example of a semiconductor device.

[0298] FIG. 26 shows an active matrix electronic paper as an example of a semiconductor device. The thin film transistor 581 used in the device may be the thin film transistor shown in any one of the first to third embodiments. It can be fabricated in the same way as a transistor.

[0299] The electronic paper in Figure 26 is an example of a display device that uses the twisting ball display method. The spherical display method is an electrode layer that uses spherical particles painted in black and white as display elements. and a potential difference is applied between the first electrode layer and the second electrode layer. This is a method of controlling the orientation of spherical particles and performing display by generating a

[0300] The thin film transistor 581 provided on the substrate 580 is a thin film transistor of a bottom gate structure. The source electrode layer or the drain electrode layer is a first electrode layer 587 and an insulating layer 583. The first electrode 84 is electrically connected to the second electrode 585 through contact holes formed therein. Between the layer 587 and the second electrode layer 588, there are black areas 590a and white areas 590b. and a spherical particle 589 containing a cavity 594 filled with liquid therearound. The spherical particles 589 are surrounded by a filler 595 such as resin (see FIG. 26). In the LCD panel 26, the first electrode layer 587 corresponds to the pixel electrode, and the second electrode layer 588 corresponds to the common electrode. The second electrode layer 588 is provided over the same substrate as the thin film transistor 581. The common connection portion shown in the above embodiment is used to electrically connect a pair of A second electrode layer 588 provided on the substrate 596 is connected to the substrate 596 via conductive particles disposed between the substrates. It can be electrically connected to a common potential line.

[0301] It is also possible to use an electrophoretic element instead of the twist ball. A transparent liquid, positively charged white particles, and negatively charged black particles are enclosed in a 10 mm diameter container. Microcapsules of about 200 μm are used. Between the first electrode layer and the second electrode layer The microcapsules provided on the substrate are subjected to an electric field by the first electrode layer and the second electrode layer. When the screen is turned on, the white particles and black particles move in opposite directions, allowing the screen to display either white or black. The display element that applies this principle is an electrophoretic display element, which is generally called electronic paper. Electrophoretic display elements have a higher reflectivity than liquid crystal display elements, so auxiliary light It does not require a battery, consumes little power, and the display can be seen even in dimly lit places. In addition, even if power is not supplied to the display unit, the image that has been displayed can be maintained. Therefore, it is possible to transmit the signal from the radio wave source to the semiconductor device with a display function (simply a display device, or a display The displayed image is preserved even if the device (also called a semiconductor device) is moved away. It is possible to keep it.

[0302] As described above, electronic paper with high reliability as a semiconductor device can be manufactured.

[0303] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0304] (Embodiment 8) In this embodiment mode, a light-emitting display device is shown as an example of a semiconductor device. Here, a light-emitting element that uses electroluminescence is used as the element. Light-emitting devices that utilize electroluminescence are either organic or inorganic compounds. Generally, the former is called an organic EL element and the latter is called an inorganic EL element. It's been discovered.

[0305] In an organic EL element, electrons and holes are released from a pair of electrodes by applying a voltage to the light-emitting element. are injected into the layers containing the light-emitting organic compounds, causing a current to flow. The recombination of the electrons and holes creates an excited state in the light-emitting organic compound. The excited state is then converted to the ground state, at which point light is emitted. Such a light-emitting element is called a current-excited light-emitting element.

[0306] Inorganic EL elements are divided into dispersion-type inorganic EL elements and thin-film-type inorganic EL elements depending on the element structure. Dispersion-type inorganic EL elements have a light-emitting layer in which particles of a light-emitting material are dispersed in a binder. The emission mechanism is a donor-acceptor interaction that utilizes the donor and acceptor levels. Thin-film inorganic EL devices sandwich the light-emitting layer between dielectric layers. Furthermore, this structure is sandwiched between electrodes, and the light emission mechanism utilizes the inner-shell electron transition of metal ions. In this example, the light-emitting element is an organic EL element. do.

[0307] FIG. 27 shows an example of a pixel configuration to which digital time gray scale driving can be applied as an example of a semiconductor device. FIG.

[0308] The configuration and operation of a pixel to which digital time gray scale driving can be applied will be described. The n-type semiconductor uses an oxide semiconductor layer (In-Ga-Zn-O based non-single crystal film) in the channel formation region. 1 shows an example in which two channel-type transistors are used in one pixel.

[0309] A pixel 6400 shown in FIG. 27(A) includes a switching transistor 6401, a driving transistor 6402, and a The switching element 6402 includes a transistor 6402, a light-emitting element 6404, and a capacitor element 6403. The gate of the scanning transistor 6401 is connected to the scanning line 6406, and the first electrode (source electrode and The second electrode (one of the source electrode and drain electrode) is connected to a signal line 6405, and the second electrode (one of the source electrode and drain electrode) is connected to a signal line 6406. The other of the gate electrodes is connected to the gate of the driving transistor 6402. The gate of the transistor 6402 is connected to a power supply line 6407 via a capacitor element 6403. The electrode is connected to a power line 6407, and the second electrode is the first electrode (pixel electrode) of the light emitting element 6404. The second electrode of the light emitting element 6404 corresponds to the common electrode 6408.

[0310] A low power supply potential is set to the second electrode (common electrode 6408) of the light emitting element 6404. The low power supply potential is a low power supply potential with respect to the high power supply potential set to the power supply line 6407. Potential < High power supply potential. For example, GND, 0V, etc. are set as low power supply potential. The potential difference between the high power supply potential and the low power supply potential is applied to the light emitting element 6404. Then, in order to make the light emitting element 6404 emit light by passing a current through the light emitting element 6404, a high power supply potential and the low power supply potential is set to be equal to or greater than the forward threshold voltage of the light emitting element 6404. Each potential is set.

[0311] However, the present invention is not limited to this. A high power supply potential may be set to the second electrode and a low power supply potential may be set to the power supply line 6407. may be set.

[0312] The capacitor element 6403 is omitted by substituting the gate capacitance of the driving transistor 6402. The gate capacitance of the driving transistor 6402 is determined by the channel region A capacitance may be formed between the gate electrode and the transistor.

[0313] In the case of a voltage input voltage driving method, the gate of the driving transistor 6402 is connected to The driving transistor 6402 is either fully on or off. A video signal is input, that is, the driving transistor 6402 is operated in a linear region. The driving transistor 6402 is operated in a linear region, so that the voltage of the driving transistor 6402 is higher than the voltage of the power supply line 6407. A high voltage is applied to the gate of the driving transistor 6402. The signal line 6405 is connected to A voltage equal to or greater than (power supply line voltage+Vth of the driving transistor 6402) is applied.

[0314] Furthermore, when analog grayscale driving is performed instead of digital time grayscale driving, the input of the signal is different. By doing so, the same pixel configuration as in FIG. 27 can be used.

[0315] When analog gradation driving is performed, a light emitting element 6404 is connected to the gate of a driving transistor 6402. A voltage equal to or greater than the forward voltage of the light emitting element 64 and the Vth of the driving transistor 6402 is applied. The forward voltage in 04 refers to the voltage required to achieve the desired brightness, and It should be noted that the driving transistor 6402 is designed to operate in the saturation region. By inputting an optical signal, a current can be passed through the light emitting element 6404. In order to operate the transistor 6402 in the saturation region, the potential of the power supply line 6407 is The potential of the light emitting element is made higher than the gate potential of the capacitor 6402. A current corresponding to a video signal is passed through 6404, enabling analog gradation driving.

[0316] Note that the pixel configuration shown in this embodiment mode is not limited to this. New switches, resistors, capacitors, transistors, logic circuits, etc. may be added. For example, the configuration shown in FIG. 27(B) may be used. The pixel 6420 shown in FIG. 27(B) has the following configuration: A switching transistor 6401, a driving transistor 6402, and a light-emitting element 6404 and a capacitor element 6423. The switching transistor 6401 has a gate The first electrode (one of the source electrode and the drain electrode) is connected to the signal line 64 05, and the second electrode (the other of the source electrode and the drain electrode) is connected to the driving transistor The gate of the driving transistor 6402 is connected to the gate of the capacitor element 6423 is connected to the first electrode (pixel electrode) of the light emitting element 6404, and the first electrode is The second electrode is connected to the first electrode of the light emitting element 6404. The second electrode of the light emitting element 6404 corresponds to the common electrode 6408. , and to this configuration, a switch, a resistor, a capacitor, a transistor or a logic circuit etc. may be added.

[0317] Next, the configuration of the light emitting element will be described with reference to FIG. 28. Here, the driving TFT is The cross-sectional structure of a pixel will be explained using the example of the type shown in Figures 28(A), (B), and (C). The TFTs 7001, 7011, and 7021, which are driving TFTs used in the semiconductor device, are It can be manufactured in the same manner as the thin film transistor shown in the embodiment, and is an In-Ga-Zn-O based non-single crystal It is a highly reliable thin film transistor that contains a crystal film as a semiconductor layer.

[0318] The light emitting element only needs to have at least one of the anode and cathode transparent in order to extract light. Then, a thin film transistor and a light emitting element are formed on the substrate, and light is taken from the surface opposite to the substrate. Top emission, bottom emission, and top emission. There are light-emitting elements with a double-sided emission structure that emits light from the side, and the pixel configuration is It can also be applied to optical elements.

[0319] A light emitting element with a top emission structure will be described with reference to FIG.

[0320] In FIG. 28(A), a TFT 7001 which is a driving TFT is an n-type, and a light emitting element 7002 emits light. FIG. 28(A) shows a cross-sectional view of a pixel when incident light exits the anode 7005 side. A cathode 7003 of the light emitting element 7002 and a TFT 7001 which is a driving TFT are electrically connected. A light-emitting layer 7004 and an anode 7005 are stacked in this order on a cathode 7003. 7003 uses various materials as long as they have a small work function and are conductive films that reflect light. For example, Ca, Al, CaF, MgAg, AlLi, etc. are preferable. The light-emitting layer 7004 may be composed of a single layer or a plurality of layers stacked together. When it is composed of multiple layers, the electron injection layer is formed on the cathode 7003. The electron transport layer, the light emitting layer, the hole transport layer, and the hole injection layer are laminated in this order. It is not necessary to provide all of the anodes. The anode 7005 is made of a conductive material that transmits light. For example, indium oxide containing tungsten oxide, indium oxide containing tungsten oxide Indium zinc oxide, indium oxide with titanium oxide, indium tin oxide with titanium oxide oxide, indium tin oxide (hereinafter referred to as ITO), indium zinc oxide, oxidized silicon dioxide, A light-transmitting conductive film such as indium tin oxide to which indium is added may also be used.

[0321] The region where the light-emitting layer 7004 is sandwiched between the cathode 7003 and the anode 7005 is the light-emitting element 7002. In the case of the pixel shown in FIG. 28(A), the light emitted from the light emitting element 7002 is The light is emitted toward the anode 7005 as shown by the mark.

[0322] In the above configuration, the thickness of the light-emitting layer 7004 can be adjusted to form a microcavity. By adopting a microcavity structure, color purity can be improved. In addition, the plurality of light-emitting layers 7004 can emit different colors (for example, RGB). In this case, the thickness of the light-emitting layer 7004 is adjusted for each color to form a microcavity structure. It is preferable that:

[0323] In the above configuration, an insulating film such as silicon oxide or silicon nitride is provided on the anode 7005. This can suppress deterioration of the light-emitting layer.

[0324] Next, a light emitting element with a bottom emission structure will be described with reference to FIG. When 011 is n-type and light emitted from the light emitting element 7012 is emitted to the cathode 7013 side, 28(B) shows a cross-sectional view of the pixel. A cathode 7013 of a light-emitting element 7012 is formed on a light-transmitting conductive film 7017. On the cathode 7013, a light-emitting layer 7014 and an anode 7015 are laminated in this order. When the 015 has a light-transmitting property, a shielding layer for reflecting or blocking light is applied to cover the anode. The cathode 7013 may have a film 7016 formed thereon, as in the case of FIG. Various conductive materials with small electrical conductivity can be used. The thickness is set to a level that allows light to pass through (preferably, about 5 nm to 30 nm). For example, a 20 nm film An aluminum film having a thickness of 700 nm can be used as the cathode 7013. 014 is composed of a single layer, as in FIG. 28(A), but multiple layers are laminated. The anode 7015 does not need to transmit light, but as shown in FIG. As with 28(A), it can be formed using a light-transmitting conductive material. The shielding film 7016 may be made of, for example, a metal that reflects light, but is not limited to a metal film. For example, a resin containing a black pigment may be used.

[0325] The region where the light-emitting layer 7014 is sandwiched between the cathode 7013 and the anode 7015 is the light-emitting element 7012. In the case of the pixel shown in FIG. 28(B), the light emitted from the light-emitting element 7012 corresponds to The light is emitted toward the cathode 7013 as shown by the arrow.

[0326] Next, a light emitting element with a dual emission structure will be described with reference to FIG. Then, on the conductive film 7027 having light-transmitting properties and electrically connected to the driving TFT 7021, A cathode 7023 of the light-emitting element 7022 is formed as a film. A light-emitting layer 7024 is formed on the cathode 7023. The cathode 7023 is laminated in the same manner as in FIG. Various conductive materials with small electrical conductivity can be used. For example, Al having a thickness of 20 nm is used as the cathode 7023. The light-emitting layer 7024 can be formed of a single layer, as in FIG. The anode 70 may be formed by laminating a plurality of layers. 25 is formed using a light-transmitting conductive material, similar to FIG. 28(A). It is possible.

[0327] The overlapping portion of the cathode 7023, the light-emitting layer 7024, and the anode 7025 is the light-emitting element 70. In the case of the pixel shown in FIG. 28(C), the light emitted from the light emitting element 7022 is is emitted to both the anode 7025 side and the cathode 7023 side as shown by the arrows.

[0328] Although organic EL elements have been described as light-emitting elements here, inorganic EL elements can also be used as light-emitting elements. It is also possible to provide an L element.

[0329] In this embodiment, a thin film transistor (driving TFT) that controls driving of a light emitting element is Although an example in which the light emitting element is electrically connected has been shown, it is possible to prevent a current from flowing between the driving TFT and the light emitting element. A control TFT may be connected.

[0330] Note that the semiconductor device described in this embodiment mode is not limited to the configuration shown in FIG. Many variations are possible.

[0331] Next, the appearance and structure of a light-emitting display panel (also referred to as a light-emitting panel), which is one mode of a semiconductor device, will be described. The cross section will be described with reference to Figure 29. Figure 29(A) shows a cross section of a semiconductor device formed on a first substrate 4051. Highly reliable thin film transistors containing In-Ga-Zn-O based non-single crystal films as semiconductor layers The resistors 4509 and 4510 and the light emitting element 4511 are sealed between the second substrate 4506. 29(B) is a top view of the panel sealed with material 4505; This corresponds to the cross section at HI.

[0332] A pixel portion 4502, a signal line driver circuit 4503a, and a signal line driver circuit 4504 are provided on a first substrate 4501. 3b and the scanning line driver circuits 4504a and 4504b. In addition, a pixel portion 4502, signal line driver circuits 4503a and 4503b, and A second substrate 4506 is provided on the scanning line driver circuits 4504a and 4504b. The pixel portion 4502, the signal line driver circuits 4503a and 4503b, and the scanning line driver circuit 45 4504a and 4504b are a first substrate 4501, a sealing material 4505, and a second substrate 4506. The seal is sealed together with the filler 4507 by the sealant. Highly airtight protective film with little outgassing (lamination film, UV curable resin film) It is preferable to package (enclose) the product in a protective film (such as a film) or a cover material.

[0333] A pixel portion 4502, a signal line driver circuit 4503a, and a fourth 503b and the scanning line driver circuits 4504a and 4504b have a plurality of thin film transistors. In FIG. 29B, a thin film transistor 4510 included in a pixel portion 4502 and a signal 45 shows an example of a thin film transistor 4509 included in a line driver circuit 4503a.

[0334] The thin film transistors 4509 and 4510 can have the structure shown in the above embodiment modes. Here, the thin film transistors 4509 and 4510 are made of In-Ga-Zn-O based non-single crystal. A highly reliable thin film transistor including a crystalline film as a semiconductor layer can be applied. In this embodiment, the thin film transistors 4509 and 4510 are n-channel thin film transistors. It is Ta.

[0335] Further, 4511 corresponds to a light-emitting element, and a first electrode which is a pixel electrode of the light-emitting element 4511 The layer 4517 is electrically connected to the source electrode layer or the drain electrode layer of the thin film transistor 4510. The light-emitting element 4511 is configured by a first electrode layer 4517, an electroluminescent layer The second electrode layer 4512 and the second electrode layer 4513 are stacked in a stacked structure. The direction of the light emitting element 4511 is adjusted according to the direction of the light extracted from the light emitting element 4511. The configuration can be changed as appropriate.

[0336] The partition wall 4520 is formed using an organic resin film, an inorganic insulating film, or organic polysiloxane. In particular, a photosensitive material is used to form an opening on the first electrode layer 4517, and the sidewall of the opening It is preferable to form the inclined surface so that the inclined surface has a continuous curvature.

[0337] The electroluminescent layer 4512 may be composed of a single layer or a plurality of layers stacked. It doesn't matter whether it's done or not.

[0338] The second electrode layer is formed to prevent oxygen, hydrogen, moisture, carbon dioxide, and the like from entering the light-emitting element 4511. A protective film may be formed on the partition wall 4513 and the partition wall 4520. The protective film may be formed of silicon nitride. It is possible to form a silicon nitride oxide film, a DLC film, etc.

[0339] In addition, signal line driver circuits 4503a and 4503b, scanning line driver circuits 4504a and 4504b Various signals and potentials applied to the pixel portion 4502 are transmitted through the FPC 4518a, 4518b, and It is supplied by b.

[0340] In this embodiment, the connection terminal electrode 4515 is connected to the first electrode layer 4 The terminal electrode 4516 is formed from the same conductive film as the thin film transistor 4509 and the The source electrode layer and the drain electrode layer 510 are formed from the same conductive film.

[0341] The connection terminal electrode 4515 is connected to the terminal of the FPC 4518a via the anisotropic conductive film 4519. are electrically connected to each other.

[0342] The substrate located in the direction in which light is extracted from the light emitting element 4511 must be light-transmitting. In this case, use a glass plate, plastic plate, polyester film or acrylic film. A light-transmitting material such as polyethylene is used.

[0343] In addition to inert gases such as nitrogen and argon, filler 4507 can also be used as UV-curable resin. It can be made of oil or thermosetting resin, and PVC (polyvinyl chloride), acrylic, Polyimide, epoxy resin, silicone resin, PVB (polyvinyl butyral) or EV In this embodiment, nitrogen is used as the filler. The material used was

[0344] If necessary, a polarizing plate or a circular polarizing plate (including an elliptical polarizing plate) may be provided on the light-emitting surface of the light-emitting element. Optical films such as retardation plates (λ / 4 plates, λ / 2 plates) and color filters may be provided as appropriate. In addition, an anti-reflection film may be provided on the polarizing plate or the circular polarizing plate. Anti-glare treatment can be applied to diffuse reflected light and reduce glare.

[0345] The signal line driver circuits 4503a and 4503b and the scanning line driver circuits 4504a and 4504b are A driving circuit formed of a single crystal semiconductor film or a polycrystalline semiconductor film on a separately prepared substrate is Alternatively, only the signal line driver circuit, or a part of the signal line driver circuit, or the scanning line driver circuit may be mounted. Only the path or only a part of the path may be separately formed and mounted. In this embodiment, the structure shown in FIG. Not limited.

[0346] Through the above steps, a highly reliable light-emitting display device (display panel) can be manufactured as a semiconductor device. It is possible.

[0347] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0348] (Embodiment 9) The semiconductor device can be used as electronic paper. It can be used in any electronic device in any field. Using the par, electronic books (e-books), posters, in-car advertisements on trains and other vehicles, The present invention can be applied to the display of various cards such as credit cards. As shown in Figures 30 and 31.

[0349] FIG. 30(A) shows a poster 2631 made of electronic paper. When printed materials are used, the advertisements are replaced manually, but when electronic paper is used, The display of the advertisement can be changed in a short time. Also, the display is stable without any distortion. The poster may be configured to be capable of transmitting and receiving information wirelessly.

[0350] FIG. 30(B) shows an advertisement 2632 inside a vehicle such as a train. When using printed paper, advertisements are exchanged manually, but with electronic paper, This allows you to change the display of your advertisements in a short time without requiring a lot of manpower. The poster is designed to be able to send and receive information wirelessly. It may also be possible to use the following.

[0351] 31 shows an example of an electronic book 2700. For example, the electronic book 2700 includes: It consists of two housings, housing 2701 and housing 2703. The body 2703 is integrated with a shaft 2711, and the opening and closing movement is performed around the shaft 2711. This configuration allows the device to operate like a paper book. This becomes:

[0352] A display unit 2705 is incorporated in the housing 2701, and a display unit 2707 is incorporated in the housing 2703. The display unit 2705 and the display unit 2707 are configured to display a continuous screen. Alternatively, a different screen may be displayed. For example, a sentence is displayed on the right display unit (display unit 2705 in FIG. 31) and An image can be displayed on the display unit 2707 in FIG.

[0353] 31 shows an example in which the housing 2701 is provided with an operation unit. 701 includes a power supply 2721, operation keys 2723, a speaker 2725, etc. The operation keys 2723 can be used to turn pages. It may also be configured to include a touch panel, a pointing device, etc. On the side, there are external connection terminals (earphone terminal, USB terminal, or AC adapter and USB A configuration including a terminal that can be connected to various cables, a recording medium insertion section, etc. Furthermore, the electronic book 2700 may be configured to have the function of an electronic dictionary. That's fine.

[0354] The electronic book 2700 may also be configured to be able to send and receive information wirelessly. The desired book data can be purchased and downloaded from the e-book server. is also possible.

[0355] (Embodiment 10) In this embodiment, a pixel configuration and pixel operation applicable to a liquid crystal display device will be described. In this embodiment, the liquid crystal element operates in a twisted twist (TN) mode. ed Nematic mode, IPS (In-Plane-Switching) mode Mode, FFS (Fringe Field Switching) mode, MVA (Multiple ti-domain Vertical Alignment) mode, PVA(Pat terned Vertical Alignment), ASM(Axially S ymmetric aligned Micro-cell) mode, OCB(Opti Cal Compensated Birefringence mode, FLC (Fe rferoelectric Liquid Crystal) mode, AFLC (Anti Ferroelectric Liquid Crystals, etc. can be used. do.

[0356] FIG. 41A is a diagram showing an example of a pixel configuration that can be applied to a liquid crystal display device. The pixel 5080 includes a transistor 5081, a liquid crystal element 5082, and a capacitor 5083. The gate of the transistor 5081 is electrically connected to a wiring 5085. The first terminal of the transistor 5081 is electrically connected to a wiring 5084. The first terminal of the liquid crystal element 5082 is electrically connected to the wiring. The first terminal of the capacitor 5083 is electrically connected to the first terminal of the liquid crystal element 5082. The second terminal of the capacitor 5083 is electrically connected to the wiring 5086. The first terminal of a transistor is either the source or the drain. The second terminal of the transistor is the other of the source and drain. If the first terminal of the transistor is the source, then the second terminal of the transistor is the drain. Similarly, if the first terminal of the transistor is the drain, then the second terminal of the transistor is is the source.

[0357] The wiring 5084 can function as a signal line. The signal line is input from outside the pixel. The wiring 5085 is a wiring for transmitting the signal voltage to the pixel 5080. The scan line is used to control the on / off of the transistor 5081. The wiring 5086 can function as a capacitance line. This is a wiring for applying a predetermined voltage to the second terminal of the transistor 5083. The capacitor 5083 can function as a storage capacitor. The storage capacitor can store the signal voltage even when the switch is off. The wiring 5087 is a capacitor element for keeping the voltage applied to the capacitor 082. The counter electrode applies a predetermined voltage to the second terminal of the liquid crystal element 5082. The functions that each wiring can have are not limited to these. For example, by changing the voltage applied to the capacitance line, The voltage applied to the liquid crystal element can also be adjusted. Since it is only necessary for the transistor 5081 to function as a P-channel type, the polarity of the transistor 5081 may be a P-channel type. Alternatively, it may be an N-channel type.

[0358] FIG. 41(B) is a diagram showing an example of a pixel configuration that can be applied to a liquid crystal display device. 41(A), the pixel configuration example shown in FIG. 41(B) is different from the pixel configuration example shown in FIG. 41(A) in that the wiring 5087 is omitted. The second terminal of the liquid crystal element 5082 and the second terminal of the capacitor element 5083 are electrically connected. The pixel configuration is the same as that shown in FIG. 41(A), except that the pixel is connected to the The pixel configuration example shown in FIG. 41(B) is particularly suitable for liquid crystal elements in a horizontal electric field mode (IP This is applicable when the liquid crystal element is horizontally shifted (including S mode and FFS mode). In the field mode, the second terminal of the liquid crystal element 5082 and the second terminal of the capacitor element 5083 are Since they can be formed on the same substrate, the second terminal of the liquid crystal element 5082 and the capacitor element 5 This is because it is easy to electrically connect the second terminal of the 083. By using the pixel configuration as shown, the wiring 5087 can be omitted, and the manufacturing process can be simplified. This allows the manufacturing cost to be reduced.

[0359] The pixel configuration shown in FIG. 41(A) or FIG. 41(B) is arranged in a matrix. In this way, a display section of a liquid crystal display device is formed, and various images can be displayed. FIG. 41(C) shows a pixel configuration in which a plurality of pixels shown in FIG. 41(A) are arranged in a matrix. The circuit configuration shown in FIG. 41(C) is a diagram showing a circuit configuration when the display unit has The figure shows four pixels extracted from the multiple pixels. j is a natural number), the pixel located at the The wiring 5084_i, wiring 5085_j, and wiring 5086_j are electrically connected to Similarly, for the pixel 5080_i+1,j, a wiring 5084_i+1 and a wiring 5085_j and the wiring 5086_j are electrically connected. For +1, wire 5084_i, wire 5085_j+1, wire 5086_j+1 and Similarly, for pixel 5080_i+1,j+1, the wiring 5084_ i+1, a wiring 5085_j+1, and a wiring 5086_j+1. A wiring can be shared by multiple pixels belonging to the same column or row. In the pixel configuration shown in FIG. 41(C), the wiring 5087 is a counter electrode. Since the elements are common, the notation for wiring 5087 using natural numbers i or j is It is also possible to use the pixel configuration shown in FIG. Therefore, even if the wiring 5087 is shown in the configuration, the wiring 5087 is not essential, and other wiring It can be omitted by being shared with a line, etc.

[0360] The pixel configuration shown in FIG. 41(C) can be driven in various ways. The liquid crystal display is driven by a method called current driving, which prevents deterioration of the liquid crystal element (burn-in). FIG. 41(D) shows the state where dot inversion driving, which is one of AC driving, is performed. When the timing of the voltage applied to each wiring in the pixel configuration shown in FIG. 1 is a diagram showing a dot inversion driving method and a dot inversion driving method. This can suppress the flicker that is visible when the display is turned on.

[0361] In the pixel configuration shown in FIG. 41C, the pixel The switch in the jth gate selection period is in the selected state (on state) during one frame period. In the other periods, it is in the non-selected state (off state). After the j+1 gate selection period, the j+1 gate selection period is provided. In this way, sequential scanning is performed. As a result, all pixels are selected in sequence within one frame period. In the timing chart, when the voltage is in a high state (high level), The switch is in the selected state, and when the voltage is low (low level), it is in the unselected state. This is the case when the transistor in each pixel is an N-channel type, and when it is a P-channel type When a transistor of this type is used, the relationship between voltage and selection state is different from that of the N-channel type. The opposite is true.

[0362] In the timing chart shown in FIG. 41(D), the jth pulse in the kth frame (k is a natural number) During the gate selection period, a positive signal voltage is applied to the wiring 5084_i used as a signal line. A negative signal voltage is applied to the wiring 5084_i+1. In the j+1-th gate selection period, a negative signal voltage is applied to the wiring 5084_i, and the wiring 5 A positive signal voltage is applied to 084_i+1. After that, each signal line As a result, in the kth frame, A positive signal voltage is applied to the pixel 5080_i,j, and a negative signal voltage is applied to the pixel 5080_i+1,j. A negative signal voltage is applied to the pixel 5080_i,j+1, and a positive signal voltage is applied to the pixel 5080_i+1,j+1. Then, in the k+1-th frame, the signal voltages are added as follows: In each pixel, a signal of the opposite polarity to the signal voltage written in the k-th frame is written. As a result, in the k+1th frame, the pixel 5080_i,j A negative signal voltage is applied to pixel 5080_i+1,j, a positive signal voltage is applied to pixel 5080_i,j A positive signal voltage is applied to pixel +1, and a negative signal voltage is applied to pixel 5080_i+1,j+1. In this way, adjacent pixels in the same frame have different polarities. A signal voltage of a certain value is applied to each pixel, and a signal voltage The dot inversion driving method is a driving method in which the polarity of the liquid crystal is inverted. This is visible when the entire or part of the displayed image is uniform while suppressing deterioration of the element. Flicker can be reduced. The voltage applied to all the wirings 5086 including the wirings 5086 can be set to a constant voltage. The timing chart for line 5084 only shows the polarity of the signal voltage. In this case, various signal voltage values ​​can be used for the displayed polarity. Although the polarity is inverted for each pixel, the present invention is not limited to this. For example, the polarity of the signal voltage written every two gate selection periods can be reversed. By reversing the polarity, it is possible to reduce the power consumption required to write the signal voltage. In addition, it is possible to invert the polarity for each column (source line inversion) or for each row. It is also possible to invert the polarity (gate line inversion).

[0363] The second terminal of the capacitor 5083 in the pixel 5080 is connected to a capacitor in one frame period. A constant voltage is sufficient. The voltage applied is low for most of the frame period, and a nearly constant voltage is applied. Therefore, the second terminal of the capacitor element 5083 in the pixel 5080 is connected to the wiring 5 085. FIG. 41(E) is a diagram showing an example of a pixel configuration that can be applied to a liquid crystal display device. The pixel configuration shown in FIG. 41(E) has a wiring configuration different from that shown in FIG. 41(C). 5086 is omitted, and the second terminal of the capacitance element 5083 in the pixel 5080 and the The wiring 5085 in the row is electrically connected. In the range shown in FIG. 41(E), the pixel 5080_i,j+1 and the pixel The second terminal of the capacitance element 5083 in 5080_i+1,j+1 is connected to the wiring 5085_j. In this way, the second terminal of the capacitor element 5083 in the pixel 5080 and the By electrically connecting the wiring 5085 in the previous row, the wiring 5086 is omitted. Since the second terminal of the capacitor 5083 can be connected to the The destination may be the wiring 5085 in another row, not just the wiring 5085 in the previous row. The driving method of the pixel configuration shown in FIG. 41(E) is the same as that of the pixel configuration shown in FIG. The same method of movement can be used.

[0364] The capacitor 5083 and the wiring electrically connected to the second terminal of the capacitor 5083 are By using this, it is possible to reduce the voltage applied to the wiring 5084 used as a signal line. The pixel configuration and driving method in this case will be explained using Figures 41(F) and 41(G). The pixel configuration shown in FIG. 41(F) has a wiring 5 086 are provided as two per pixel column, and the second The feature of this method is that the electrical connection to the terminals is made alternately between adjacent pixels. The two wires 5086 are referred to as wire 5086-1 and wire 5086-2, respectively. Specifically, in the range shown in FIG. 41(F), the pixel 5080_i , j, the second terminal of the capacitance element 5083 is electrically connected to the wiring 5086-1_j. The second terminal of the capacitor 5083 in the pixel 5080_i+1,j is connected to the wiring 5086-2 _j, and the second terminal of the capacitance element 5083 in the pixel 5080_i,j+1 The pixel is electrically connected to the wiring 5086-2_j+1 and is connected to the pixel 5080_i+1,j+1. A second terminal of the capacitor 5083 in the .

[0365] For example, as shown in FIG. 41(G), in the k-th frame, pixel 5080_i, When a signal voltage of positive polarity is written to j, the wiring 5086-1_j is connected to the j-th gate selection period, and changes to high level after the jth gate selection period ends. Then, it maintains a high level for one frame period, and After a signal voltage of negative polarity is written during the j-th gate selection period, the signal voltage is changed to a low level. In this way, after a signal voltage of positive polarity is written to the pixel, the second By changing the voltage of the wiring electrically connected to the terminal in the positive direction, the voltage applied to the liquid crystal element The voltage written to the pixel can be changed by a predetermined amount in the positive direction. The power consumption required for signal writing can be reduced because the signal voltage can be reduced. In addition, when a signal voltage of negative polarity is written in the j-th gate selection period, After a signal voltage of negative polarity is written to the pixel, the second terminal of the capacitor 5083 is electrically connected to the By changing the voltage of the wiring connected to the liquid crystal element in the negative direction, the voltage applied to the liquid crystal element The negative polarity can be changed by a predetermined amount, so that the pixel That is, the signal voltage to be written can be reduced. The electrically connected wiring is connected to the same row of the same frame when a positive polarity signal voltage is applied. The pixels to which a negative signal voltage is applied have different wiring. FIG. 41(F) shows a case where a signal voltage of positive polarity is written in the k-th frame. A wiring 5086-1 is electrically connected to the pixel, and a signal voltage of negative polarity is applied in the k-th frame. In this example, the wiring 5086-2 is electrically connected to the pixel to which the voltage is written. This is just an example. For example, a pixel to which a signal voltage of a positive polarity is written and a pixel to which a signal voltage of a negative polarity is written may be In the case of a driving method in which pixels to which light is written appear every two pixels, the wiring 5086-1 and The electrical connection of the wiring 5086-2 is also performed alternately every two pixels. Furthermore, it is preferable that signal voltages of the same polarity are written to all pixels in one row (gain In this case, one wiring 5086 per row is sufficient. That is, even in the pixel configuration shown in FIG. 41(C), the same applies as in FIG. 41(F) and FIG. 41(G). As explained above, a driving method for reducing the signal voltage written to the pixel can be used. do.

[0366] Next, the liquid crystal element is a vertical alignment (VA) liquid crystal display, typically an MVA mode or a PVA mode. This section describes a pixel configuration and driving method that are particularly preferable for the VA mode. The LCD panel has many advantages, such as no rubbing process required during manufacturing, minimal light leakage during black display, and low driving voltage. However, the image quality deteriorates when the screen is viewed from an angle (narrow viewing angle). In order to widen the viewing angle in the VA mode, the following problems are encountered: As shown in (B), a pixel configuration having multiple sub-pixels in one pixel is used. In the pixel configuration shown in FIG. 42(A) and FIG. 42(B), the pixel 5080 is 5 shows an example of a case where two sub-pixels (sub-pixel 5080-1 and sub-pixel 5080-2) are included. The number of sub-pixels in one pixel is not limited to two, and various numbers of sub-pixels can be used. The larger the number of sub-pixels, the wider the viewing angle can be. The sub-pixels can have the same circuit configuration as each other. The circuit configuration of the first subpixel 5080-1 is the same as that shown in A). A device having a transistor 5081-1, a liquid crystal element 5082-1, and a capacitor element 5083-1 The connections between the various components are in accordance with the circuit configuration shown in FIG. The second subpixel 5080-2 includes a transistor 5081-2, a liquid crystal element 5082-2, a capacitor The connection relationship of each element is the circuit configuration shown in FIG. 41(A). shall be in accordance with the following.

[0367] The pixel configuration shown in FIG. 42(A) is a configuration in which two sub-pixels constituting one pixel are used as scanning lines. There are two wires 5085 (wire 5085-1 and wire 5085-2) that are used as signal lines. 5084 is used as a capacitor line, and one wiring 5086 is used as a capacitor line. In this way, by sharing the signal line and the capacitance line between two sub-pixels, The throughput can be improved and the signal line driver circuit can be simplified. This reduces manufacturing costs and the number of connections between the LCD panel and the driver circuit IC. The pixel configuration shown in FIG. 42(B) is a pixel configuration in which two sub-pixels make up one pixel. For each pixel, there is one wiring 5085 used as a scanning line, and one wiring 50 The wiring 5084 has two wirings 5084 (wiring 5084-1 and wiring 5084-2) and is used as a capacitance line. In this way, the scanning lines and the capacitance lines are connected to two sub-pixels. By sharing the same element, the aperture ratio can be improved, and the total number of scanning lines can be reduced. This allows for a sufficient gate line selection period even in high-resolution LCD panels. This allows the appropriate signal voltage to be written to each pixel.

[0368] 42(C) and 42(D) show the pixel configuration shown in FIG. 42(B) in which the liquid crystal element is This is an example in which the electrical connection state of each element is represented in a schematic manner by replacing it with the shape of a pixel electrode. In FIG. 42(C) and FIG. 42(D), the electrode 5088-1 represents the first pixel electrode, The electrode 5088-2 represents the second pixel electrode. The electrode 5088-1 corresponds to the first terminal of the liquid crystal element 5082-1 ​​in FIG. 42(B). The second pixel electrode 5088-2 corresponds to the first terminal of the liquid crystal element 5082-2 in FIG. 42(B). That is, the first pixel electrode 5088-1 corresponds to the source of the transistor 5081-1. or one of the drains, and the second pixel electrode 5088-2 is electrically connected to the transistor 5081-2 is electrically connected to either the source or drain of the transistor 5081-2. In this case, the connection relationship between the pixel electrode and the transistor is reversed. 088-1 is electrically connected to either the source or drain of the transistor 5081-2. The second pixel electrode 5088-2 is connected to the source or drain of the transistor 5081-1. It is assumed that the terminals are electrically connected to one of the terminals.

[0369] The pixel configurations shown in FIG. 42(C) and FIG. 42(D) are arranged alternately in a matrix. By doing so, a special effect can be obtained. An example is shown in Figure 48(A) and Figure 48(B). The pixel configuration shown in Figure 48(A) is The part corresponding to pixel 5080_i,j and pixel 5080_i+1,j+1 is shown in FIG. The configuration shown in FIG. 1 is a block diagram of a pixel 5080_i+1,j and a pixel 5080_i,j+1. In this configuration, the part shown in FIG. When driven as shown in the timing chart, during the jth gate selection period of the kth frame, The first pixel electrode of the pixel 5080_i,j and the second pixel electrode of the pixel 5080_i+1,j A signal voltage of positive polarity is written, and the second pixel electrode of the pixel 5080_i,j and the pixel 50 A signal voltage of negative polarity is written to the first pixel electrode of 80_i+1,j. In the j+1-th gate selection period of the frame, the second pixel electrode and and a signal voltage of positive polarity is written to the first pixel electrode of the pixel 5080_i+1,j+1, The first pixel electrode of the pixel 5080_i,j+1 and the second pixel electrode of the pixel 5080_i+1,j+1 In the (k+1)th frame, a signal voltage of negative polarity is written to each pixel. By doing so, the polarity of the signal voltage is inverted in the pixel configuration including the sub-pixel. This realizes a drive equivalent to dot inversion drive, while changing the polarity of the voltage applied to the signal line by one frame. Since the same voltage can be used within a period, the power consumption required for writing the signal voltage to the pixel can be reduced. The force can be significantly reduced. The voltage applied to all wirings 5086 including the wiring 5086 can be a constant voltage.

[0370] Furthermore, by using the pixel configuration and driving method shown in FIG. 48(C) and FIG. 48(D), The magnitude of the signal voltage written to the pixel can be reduced. The capacitance lines electrically connected to the plurality of sub-pixels of the pixel are different for each sub-pixel. That is, the pixel configuration and driving method shown in FIG. 48(A) and FIG. 48(B) Therefore, for sub-pixels to which the same polarity is written in the same frame, the capacitances in the same row are For sub-pixels that share a common line and have different polarities written in the same frame, Then, when writing to each row is completed, The voltage of the positive polarity signal voltage is written to the sub-pixel in the positive direction, and the voltage of the negative polarity signal voltage is written to the By changing the signal voltage written to the pixel in the negative direction, Specifically, the wiring 5086 used as the capacitance line is There are two lines (wiring 5086-1 and wiring 5086-2), and the first pixel of pixel 5080_i,j The electrode and the wiring 5086-1_j are electrically connected via a capacitor, and the pixel 5080 The second pixel electrode of pixel _i,j is electrically connected to the wiring 5086-2_j via a capacitance element. The first pixel electrode of the pixel 5080_i+1,j and the wiring 5086-2_j form a capacitance element. The second pixel electrode of the pixel 5080_i+1,j is electrically connected to the wiring 508 6-1_j is electrically connected to the first pixel 5080_i,j+1 through a capacitance element. The pixel electrode and the wiring 5086-2_j+1 are electrically connected via a capacitance element, and the pixel The second pixel electrode 5080_i,j+1 and the wiring 5086-1_j+1 are connected via a capacitance element. The first pixel electrode of the pixel 5080_i+1,j+1 and the wiring 5086 are electrically connected to each other. -1_j+1 are electrically connected to the pixel 5080_i+1,j+1 via a capacitance element. The second pixel electrode and the wiring 5086-2_j+1 are electrically connected via a capacitor element. However, this is just an example. For example, if a pixel is written with a positive signal voltage and a pixel is written with a negative signal voltage, In the case of a driving method in which a pixel to which a signal voltage of the polarity is written appears every two pixels, wiring 5 The electrical connections of 086-1 and wiring 5086-2 are also made alternately every two pixels. Furthermore, it is preferable that signal voltages of the same polarity are written to all pixels in one row. In this case, the wiring 5086 is connected to one row. In other words, even in the pixel configuration shown in FIG. 48(A), As explained using 48(D), a driving method that reduces the signal voltage written to the pixel is used. You can be there.

[0371] (Embodiment 11) Next, another example of the configuration of the display device and a method of driving the same will be described. In this case, a display device using a display element with a slow response time (long response time) in brightness to signal writing is used. In this embodiment, a liquid crystal display (LCD) is used as a display element with a long response time. However, the display element in this embodiment is not limited to this, and may be any suitable element. Various display elements can be used that have a slow response of brightness to interference.

[0372] In the case of a general liquid crystal display device, the response of brightness to signal writing is slow, and the signal current is not applied to the liquid crystal element. Even if pressure is applied continuously, it may take more than one frame period for the response to complete. Even if a moving image is displayed on such a display device, it is not possible to faithfully reproduce the moving image. Furthermore, in the case of active matrix driving, the time required to write a signal to one liquid crystal element is Usually, the signal writing period (one frame period or one sub-frame period) is divided by the number of scanning lines. The time it takes to select a scan line is only a short time (one scan line selection period), and the liquid crystal element cannot respond within this short time. Therefore, most of the response of the liquid crystal element occurs during the period when no signal is written. Here, the dielectric constant of the liquid crystal element changes according to the transmittance of the liquid crystal element. However, the fact that the liquid crystal element responds during the period when no signal is written means that the liquid crystal element The dielectric constant of the liquid crystal element changes when there is no charge exchange with the outside (constant charge state). In other words, in the equation (charge) = (capacity) · (voltage), when the charge is constant, The capacitance changes depending on the voltage applied to the liquid crystal element. Therefore, the voltage at the time of signal writing changes. When a liquid crystal element with slow brightness response is driven by an active matrix, In principle, the voltage cannot reach the voltage at the time of signal writing.

[0373] The display device of this embodiment is configured to make the display element respond to a desired luminance within a signal writing period. In order to achieve this, the signal level at the time of signal writing is corrected in advance (correction signal). Furthermore, the response time of the liquid crystal element is increased as the signal level increases. The larger the value, the shorter the response time of the liquid crystal element. This type of driving method that adds a correction signal is also called overdrive. In the overdrive of this embodiment, the signal writing period is input to the display device. The period of the input image signal (input image signal period T in ), even if the signal writing period is shorter than By correcting the signal level according to the period, the display element can be displayed at the desired brightness within the signal writing period. The signal writing period is equal to the input image signal period T in In cases where For example, the case where one original image is divided into multiple sub-images and the multiple sub-images are combined into one frame is called the case where one original image is divided into multiple sub-images and the multiple sub-images are combined into one frame. For example, the images may be displayed sequentially within a certain period.

[0374] Next, a method for correcting a signal level when writing a signal in an active matrix drive display device is described. An example of this method will be described with reference to Figures 43(A) and (B). Figure 43(A) shows The horizontal axis represents time and the vertical axis represents the signal level at the time of signal writing. 43(B) is a graph showing a schematic representation of the change in luminance of the signal level over time when the The horizontal axis is time and the vertical axis is display level, and the change in display level over time for one display element. In addition, when the display element is a liquid crystal element, the signal The signal level can be expressed as the voltage, and the display level can be expressed as the transmittance of the liquid crystal element. The vertical axis of FIG. 3(A) represents voltage, and the vertical axis of FIG. 43(B) represents transmittance. In the embodiment, the overdrive is performed when the signal level is other than the voltage (duty ratio, current, etc.) ) is also included. In the present embodiment, the overdrive is This also includes cases other than transmittance (brightness, current, etc.). Normally black type (e.g. VA mode, IPS mode, etc.) which displays black, and There are normally white types (e.g. TN mode, OCB mode, etc.) that sometimes display white. However, the graph shown in Figure 43(B) corresponds to both, and in the case of a normally black type The transmittance increases as you move up the graph. The transmittance may be increased toward the bottom of the film. The liquid crystal mode may be a normally black type or a normally white type. The timing of signal writing is indicated by a dotted line on the time axis, and the next The period until the signal is written is called the retention period F i In this embodiment, In Figure 43, i is an integer that represents the index of each retention period. In (A) and (B), i is shown as 0 to 2, but i may be any other value. It can also be an integer (values ​​other than 0 to 2 are not shown). i In The transmittance that realizes the brightness corresponding to the image signal is Ti In the steady state, the transmittance T i Give The voltage that is applied is V i The broken line 5101 in FIG. 43(A) indicates the area where overdrive is performed. The solid line 5102 represents the time change of the voltage applied to the liquid crystal element when the liquid crystal element is not This shows the time change in the voltage applied to the liquid crystal element when overdriving is performed. Similarly, the dashed line 5103 in FIG. 43(B) represents the liquid crystal element when overdrive is not performed. The solid line 5104 represents the time change in transmittance when overdrive is performed in this embodiment. The graph shows the time change in the transmittance of the liquid crystal element when the hold period F i At the end of , the desired transmittance T i The difference between the actual transmittance and the measured transmittance is called the error α i It will be written as follows.

[0375] In the graph shown in FIG. 43(A), the dashed line 5101 and the solid line 510 2, the desired voltage V0 is applied, and in the graph shown in FIG. 43(B), the dashed line It is assumed that the desired transmittance T0 is obtained for both 5103 and solid line 5104. If no overdrive is performed, as shown by the dashed line 5101, The desired voltage V1 is applied to the liquid crystal element, but as already mentioned, during the period when the signal is written is extremely short compared to the retention period, and most of the retention period is in a constant charge state, During the hold period, the voltage applied to the liquid crystal element changes along with the change in transmittance. At the end of F1, the voltage becomes significantly different from the desired voltage V1. The dashed line 5103 in the graph shown in FIG. 43(B) also differs greatly from the desired transmittance T1. As a result, it is not possible to display the image faithfully to the image signal, and the image quality deteriorates. On the other hand, when the overdrive of this embodiment is performed, the solid line 510 As shown in FIG. 2, at the beginning of the hold period F1, a voltage V1' that is larger than the desired voltage V1 is applied. In other words, the voltage is gradually applied to the liquid crystal element during the hold period F1. In anticipation of this change in voltage, the voltage applied to the liquid crystal element at the end of the hold period F1 is At the beginning of the hold period F1, the desired voltage V1 is set to a value close to the desired voltage V1. By applying the corrected voltage V1' to the liquid crystal element, the desired voltage V1 can be accurately applied to the liquid crystal element. In this case, the solid line 5104 in the graph shown in FIG. As shown in Fig. 1, the desired transmittance T1 is obtained at the end of the holding period F1. Although the charge state is constant for most of the duration, Next, during the hold period F2, the desired voltage V2 is set higher than V1. In this case, as in the case of the retention period F1, At the end of the hold period F2, the voltage applied to the liquid crystal element is gradually changed. At the beginning of the hold period F2, the voltage applied to the liquid crystal element is set to a voltage close to the desired voltage V2. In this case, a voltage V2' corrected from the desired voltage V2 is applied to the liquid crystal element. As shown by the solid line 5104 in the graph of FIG. 43(B), at the end of the holding period F2, The desired transmittance T2 is obtained at the end of the hold period F1. i V i-1 If it is larger than the corrected voltage V i ´ is the desired voltage V i It will be bigger than Furthermore, it is preferable to correct the hold period F2 as follows: i V i-1 Compared to If the voltage is smaller than the corrected voltage V i ´ is the desired voltage V i Compensated to be smaller than It is preferable that the specific correction value is determined by calculating the response characteristics of the liquid crystal element in advance. It can be derived by measuring the and incorporate the correction values ​​into the logic circuit. , a method of reading out correction values ​​as needed, etc. can be used.

[0376] When the overdrive in this embodiment is actually realized as a device, There are various constraints. For example, voltage correction must be performed within the rated voltage range of the source driver. That is, the desired voltage must be large enough to be an ideal correction voltage. If the voltage exceeds the rated voltage of the source driver, the voltage cannot be fully corrected. The problems that arise in such cases will be explained with reference to Figures 43(C) and (D). C) is the same as in Figure 43(A), with the horizontal axis being time and the vertical axis being voltage, and 43(D) is a graph showing the change in voltage over time as a solid line 5105. As in FIG. 43(B), the horizontal axis is time and the vertical axis is transmittance. This is a graph in which the time change in transmittance is schematically shown as a solid line 5106. The notation method is the same as in Figures 43(A) and (B), so the explanation will be omitted. (C) and (D) are correction voltages for achieving a desired transmittance T1 during the hold period F1. Since the voltage V1' exceeds the rated voltage of the source driver, V1' must be set to V1. This indicates that the correction is insufficient. The transmittance obtained will be a value that differs from the desired transmittance T1 by an error α1. The error α1 is large only when the desired voltage is originally large. However, the image quality degradation caused by the error α1 is often within the acceptable range. As the voltage becomes larger, the error in the voltage correction algorithm also becomes larger. In the voltage correction algorithm, it is assumed that the desired transmittance is obtained at the end of the hold period. When the error α1 is set, the error α1 is actually large, but the error α1 is small. Since the voltage is corrected as As a result, the error α2 also becomes larger. Furthermore, if the error α2 becomes larger, The next error, α3, becomes even larger, and so on, causing the error to grow in a chain reaction. As a result, the image quality deteriorates significantly. In drives, in order to prevent errors from increasing in a chain reaction like this, , retention period F i At the correction voltage V i When ´ exceeds the rated voltage of the source driver, Period F i The error α at the end of i and estimate the error α i Considering the size of F i+1 This allows us to adjust the correction voltage at i It has become bigger However, the error α i+1 This minimizes the impact on In the overdrive of this embodiment, An example of minimizing the error α2 will be described with reference to FIGS. 43(E) and (F). The graph shown in FIG. 43(E) is a further example of the correction voltage V2' in the graph shown in FIG. 43(C). The time change of the voltage when the correction voltage is V2'' is shown as a solid line 5107. The graph shown in FIG. 43(F) shows the voltage after correction by the graph shown in FIG. 43(E). The solid line 51 in the graph shown in FIG. In 06, excessive correction occurs due to the correction voltage V2', but the graph shown in Figure 43(F) The solid line 5108 in Fig. 5 shows the result of the correction voltage V2' adjusted to take into account the error α1. Overcorrection is suppressed and the error α2 is minimized. This can be derived by measuring the response characteristics of the liquid crystal element. The methods include formulating a correction formula and incorporating it into a logic circuit, and using a look-up table to calculate the correction value. The correction values ​​can be read out as needed, for example. These methods are then used to calculate the correction voltage V i ´ is added separately from the part to be calculated, or supplemented Positive voltage V i It can be incorporated into the part that calculates the error α i―1 Considering The adjusted correction voltage V i The correction amount (desired voltage V i The difference between i ´ correction amount It is preferable to make it small. That is, |V i ´´-V i |<|V i ´-V i |Tosu It is preferable that

[0377] Note that the error α i The shorter the signal writing period, the larger the The response time of the element must also be short, which results in a larger compensation voltage being required. Furthermore, the required correction voltage is increased, resulting in the correction voltage being The frequency of exceeding the rated voltage of i The frequency of occurrence is also high. Therefore, the overdrive in this embodiment is effective when the signal writing period is short. Specifically, it is possible to divide an original image into multiple sub-images and When the plurality of sub-images are displayed sequentially within one frame period, the image included in the plurality of images is A motion occurring in the image is detected, an intermediate image of the plurality of images is generated, and an intermediate image of the plurality of images is generated. When inserting and driving (so-called motion compensated double speed driving), or when combining these When the driving method such as the above is performed, the overdrive of this embodiment is used. This will have a significant effect.

[0378] In addition to the upper limit, the rated voltage of the source driver also has a lower limit. In this case, the voltage applied cannot be smaller than 0. Similarly, an ideal correction voltage cannot be applied, so the error α i It's getting bigger However, in this case, as in the above-mentioned method, the holding period F i At the end of The error α i and estimate the error α i Considering the magnitude of the holding period F i+1 Correction in The voltage can be adjusted. Note that the rated voltage of the source driver is set to a value less than 0. If a large voltage (negative voltage) can be applied, a negative voltage can be applied to the liquid crystal element as a correction voltage. In this way, the holding period F i At the end of the i It can be adjusted to a voltage close to do.

[0379] To prevent deterioration of the liquid crystal element, the polarity of the voltage applied to the liquid crystal element is periodically reversed. In other words, so-called inversion driving can be performed in combination with overdriving. That is, the overdrive in this embodiment includes the case where it is performed simultaneously with the inversion drive. For example, if the signal writing period is equal to the input image signal period T in If the polarity is 1 / 2 of and the input image signal period T in If the polarity of the signal is about the same as that of the signal written in the positive polarity, In this way, the polarity of the signal is reversed. By making the period of charge and discharge longer than the signal writing period, the frequency of pixel charging and discharging can be reduced. Power consumption can be reduced. However, if the polarity reversal period is too long, the difference in polarity The difference in brightness caused by the polarity of the The period is the input image signal period T in It is preferable that the length is equal to or shorter than the length.

[0380] (Embodiment 12) Next, another example of the configuration of the display device and a method of driving the same will be described. In this case, an image that interpolates the movement of an image (input image) input from outside the display device is generated by multiple The image is generated inside the display device based on the input image, and the generated image (generated image) and the input The generated image is displayed by compensating for the movement of the input image. By creating an image that looks like it's moving between the two, you can make the movement of the video smoother, and This can improve the problem of video quality being reduced by afterimages caused by video drive. The display of moving images ideally involves changing the brightness of each pixel in real time. This is achieved by controlling the pixels in real time, but the real-time individual control of the pixels is The problem of the huge number of paths, the problem of wiring space, and the huge amount of input image data Therefore, it is difficult to realize the display of moving images on a display device. The display is made to look like a moving image by displaying multiple still images in sequence at a regular interval. This period (called the input image signal period in this embodiment, T in and For example, the NTSC standard is 1 / 60 seconds, and the PAL standard is 1 Even with this period, the CRT, which is an impulse type display device, shows no movement. However, there were no problems with the image display. If a video conforming to this standard is displayed as is, it may be displayed incorrectly due to afterimages caused by the fact that it is a hold type. This causes a problem called hold blur. Blurred images are caused by the inconsistency between the human eye's unconscious movement interpolation and the hold-type display. Since it is recognized by discrepancy, it is easier to recognize input image signals than conventional standards. This can be reduced by shortening the signal cycle (approaching real-time individual control of pixels). However, shortening the input image signal cycle will require changes to the standard and will also increase the amount of data. However, it is difficult to do this based on a standardized input image signal. An image that interpolates the movement of the input image is generated inside the display device, and the generated image By interpolating the input image and displaying it, it is possible to hold the image without changing the standard or increasing the amount of data. In this way, the image signal is generated inside the display device based on the input image signal. The process of interpolating the motion of the input image is called video interpolation.

[0381] The moving image interpolation method according to this embodiment can reduce the blurring of the moving image. The moving image interpolation method in the embodiment can be divided into an image generation method and an image display method. And, for specific patterns of movement, different image generation methods and / or image display methods are used. By using this method, motion blur can be effectively reduced. FIG. 10B is a schematic diagram illustrating an example of a moving image interpolation method according to the present embodiment. In Figures 44(A) and (B), the horizontal axis represents time, and the horizontal position represents The part marked "Input" indicates the timing at which each image is handled. Here, the two images that are adjacent in time are The focus is on the image 5121 and the image 5122. The input image has a period T in Enter at intervals of In addition, the period T in The length of one frame is referred to as one frame period. The part marked "Generation" indicates the timing at which a new image is generated from the input image signal. Here, the generated image is based on the image 5121 and the image 5122. The part marked "display" indicates that the image is displayed on the display device. This shows the timing when the image is displayed. Although it is only indicated by a dashed line, by treating it in the same way as the image of interest, This is an example of a method for interpolating moving images in this form.

[0382] An example of a moving image interpolation method in this embodiment is shown in FIG. The generated image is generated based on two adjacent input images. By displaying the video in the gap between the two, it is possible to interpolate the video. Preferably, the display period of the display image is half the input period of the input image. However, the display period is not limited to this, and various display periods can be used. For example, the display period can be set to the input period By setting it shorter than half, you can display the video more smoothly. By making it longer than half the period, power consumption can be reduced. The image is generated based on two adjacent input images, but the number of input images is limited to two. For example, three (or more than three) temporally adjacent If you generate an image based on an input image (good), it will be easier than if you generate an image based on two input images. It is possible to obtain a generated image with high accuracy. The same time as the input timing of 5122, that is, the display timing relative to the input timing Although it is delayed by one frame, the display timing in the video interpolation method of this embodiment is The timing is not limited to this, and various display timings can be used. For example, You can delay the display timing by one or more frames. Therefore, the timing of displaying the generated image 5123 can be delayed, so the image 5 This allows for ample time for the generation of 123, and reduces power consumption and manufacturing costs. If the display timing is too slow relative to the input timing, the input This increases the time period for storing the force image, and increases the memory capacity required for storage. The display timing relative to the input timing should preferably be delayed by 1 to 2 frames. Desirable.

[0383] Here, the specific image 5123 generated based on the image 5121 and the image 5122 is In order to interpolate the moving image, the motion of the input image is detected. In this embodiment, a block map is used to detect the motion of the input image. However, there are various methods that can be used without being limited to this. (Methods such as taking the difference between image data and using Fourier transform) can be used. In the block matching method, first, the image data of one input image (here, the image 5121) into a data storage means (semiconductor memory, RAM, or other storage circuit, etc.) Then, the image in the next frame (image 5122 in this example) is stored in memory. The divided areas are rectangular with the same shape, as shown in Figure 44(A). It can be, but is not limited to, various things (shape or size depending on the image) Then, for each divided area, the data stored in the data storage means can be The data is compared with the image data of the previous frame (here, the image data of image 5121). In the example of FIG. 44(A), the image 5122 has a similar image data. A region similar in data to the region 5124 in the image 5121 is searched for, and the region 512 6 is searched. When searching within image 5121, the search range is limited. In the example of FIG. 44(A), the search range is set to area 5124. The area 5125 is set to be about four times the area of ​​the By increasing the size, it is possible to improve the detection accuracy even in fast-moving videos. However, if the search is too broad, the search time will be enormous, and the detection of movement will be difficult. Therefore, the area of ​​the region 5125 is set to be about two to six times the area of ​​the region 5124. Then, the searched region 5126 and the region in the image 5122 are compared. The difference in position between the area 5124 and the area 5125 is calculated as a motion vector 5127. 7 represents the movement of image data in the region 5124 during one frame period. To generate an image that represents the intermediate state of motion, the direction of the motion vector is kept the same but the size is changed. A modified image generation vector 5128 is created, and the vector 5128 is included in the region 5126 in the image 5121. The image data is moved according to the image generation vector 5128 to generate the image 5123. This series of processes is called image 512 By performing this for all regions in 2, image 5123 can be generated. Then, by sequentially displaying the input image 5121, the generated image 5123, and the input image 5122, 5121 and 5122. The position is different (i.e., moving) in the image 5122, but the generated image 512 3 is the midpoint of the object in the image 5121 and the image 5122. By displaying an image, the movement of the video can be made smoother, and blurred video caused by afterimages etc. can be prevented. The clarity can be improved.

[0384] The size of the image generation vector 5128 is determined according to the display timing of the image 5123. In the example of FIG. 44(A), the display timing of the image 5123 can be determined. is set to the midpoint (1 / 2) of the display timing of image 5121 and image 5122. The size of the image generation vector 5128 is half that of the motion vector 5127. For example, if the display timing is 1 / 3, the size is set to 1 / 3 and the display time is set to If the timing is 2 / 3, the size can be set to 2 / 3.

[0385] In this way, multiple regions with various motion vectors can be moved to create a new image. When creating an image, it is necessary to consider whether there are overlapping areas within the destination area where other areas have already been moved, or whether there are any overlapping areas within the destination area. There may be some blank areas that are not moved from the area. As a method for correcting the overlapping portion, for example, the overlapping data can be corrected by Priority is assigned based on the average method, the direction of the motion vector, etc., and high-priority data is generated. The method of using the data in the generated image, color (or brightness) is given priority, but brightness (or For example, the average of the number of pixels (or color) can be used. The image data at the corresponding position of the image 5121 or 5122 is directly used as the data in the generated image. The method of taking the average of the image data at the position of the image 5121 or the image 5122 Then, the generated image 5123 can be used as an image generation method. By displaying the timing according to the size of the vector 5128, the movement of the video becomes smoother. Furthermore, the problem of image retention caused by hold drive can be eliminated. You can improve the problem.

[0386] Another example of the moving image interpolation method in this embodiment is a time interpolation method as shown in FIG. A generated image generated based on two input images that are adjacent to each other is generated based on the two input images. When displaying the images in the gaps between the displayed images, each image is further divided into multiple sub-images. By dividing the image into multiple images and displaying them, it is possible to interpolate moving images. In addition to the benefits of shorter time, dark images are periodically displayed (the display method is This also provides the advantage of the image display period being closer to the image input period. This reduces blurring of the video due to afterimages, etc., compared to when the length is only half the power cycle. In the example of FIG. 44(B), the "input" and "generation" can be further improved. Since the same processing as in the example of FIG. 4(A) can be performed, the explanation will be omitted. In the example, "display" means dividing one input image and / or generated image into multiple sub-images. Specifically, as shown in FIG. 44(B), the image 5121 can be displayed as By dividing the image into sub-images 5121a and 5121b and displaying them sequentially, the image appears to the human eye as 5121 is perceived as being displayed, and image 5123 is perceived as being displayed as sub-images 5123a and 512 By dividing the image into 3b and displaying them sequentially, the human eye perceives it as if image 5123 is displayed. The image 5122 is divided into sub-images 5122a and 5122b and displayed sequentially. The human eye perceives the image 5122 as being displayed. The image to be perceived is the same as the example in Figure 44(A), but the display method is impulse type. Since the image can be made closer to the original image, blurring of moving images due to afterimages and the like can be further improved. The number of divided sub-images is two in FIG. 44(B), but it is not limited to this and may be various. The timing at which the sub-image is displayed is as shown in Figure 44 (B ) are set at equal intervals (1 / 2), but it is not limited to this and various display timings can be used. For example, the dark sub-images (5121b, 5122b, 5123b) By speeding up the display timing (specifically, from 1 / 4 to 1 / 2), the display Since the method can be made closer to the impulse type, blurring of moving images due to afterimages etc. can be reduced. Or, you can delay the timing of displaying the dark sub-image (specifically, 1 / 2 to 3 / 4 of the time), the period during which the bright image is displayed can be extended. , the display efficiency can be improved and the power consumption can be reduced.

[0387] Another example of the video interpolation method according to the present embodiment is to detect the shape of an object moving in an image. This is an example in which different processing is performed depending on the shape of the moving object. indicates the timing of display, similar to the example in Figure 44(B), but the displayed content is , and moving text (also called scrolling text, subtitles, tickers, etc.) In addition, "input" and "generation" may be the same as in Figure 44(B). The blurring of moving images during hold driving is due to the nature of the moving object. This is especially noticeable when the characters are moving. This is because when reading moving text, your eyes inevitably follow the text, This is because hold blurring is likely to occur. Furthermore, characters should have clear outlines. This can further accentuate the blur caused by the hold blur. That is, it determines whether an object moving in the image is a character, and if so, performs further special processing. This is effective for reducing hold blur. Contour detection and / or pattern detection are performed on the object to determine whether the object is a character. If it is determined that there is a motion error, motion interpolation is performed even for sub-images divided from the same image. Therefore, the intermediate state of the movement can be displayed to make the movement smoother. If it is determined that the character is not a character, it is divided into two parts from the same image, as shown in Figure 44(B). If the sub-image is a moving object, the position of the moving object can be displayed without changing. In the example shown in Figure 1, the area 5131 that is determined to be a character is moving upward. However, the position of the region 5131 is different between the image 5121a and the image 5121b. The same applies to images 5123a and 5123b, and images 5122a and 5122b. This allows for the blurring of moving characters, which is particularly noticeable, to be reduced to the normal motion. This makes the movement even smoother than with the double speed drive, so it can reduce the problem of afterimages and other visual issues. The blur can be further improved.

[0388] (Embodiment 13) The semiconductor device can be applied to various electronic devices (including gaming machines). Examples of such devices include television sets (also called televisions or television receivers), Computer monitors, digital cameras, digital video cameras, and other cameras, devices digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable games Examples of such devices include machines, portable information terminals, sound reproduction devices, and large game machines such as pachinko machines.

[0389] FIG. 32(A) shows an example of a television device 9600. The display unit 9603 is incorporated in the housing 9601. In this case, the housing 9601 is supported by a stand 9605. This shows a configuration in which the above is supported.

[0390] The television device 9600 can be operated using an operation switch on the housing 9601 or a separate remote control. This can be done by the remote control operation device 9610. The channel and volume can be controlled by the 9609, and the information displayed on the display 9603 is In addition, the remote control operation device 9610 can operate the video. A display portion 9607 for displaying information output from 9610 may be provided.

[0391] The television device 9600 is configured to include a receiver, a modem, and the like. It can receive more general television broadcasts and also provides wired or wireless reception via a modem. By connecting to a communication network, it can be one-way (sender to receiver) or two-way. It is also possible to communicate information (between a sender and a receiver, or between receivers).

[0392] FIG. 32(B) shows an example of a digital photo frame 9700. The photo frame 9700 has a display unit 9703 built into a housing 9701. The unit 9703 is capable of displaying various images, for example, images taken with a digital camera. By displaying the image data, it can function like a normal photo frame.

[0393] The Digital Photo Frame 9700 has an operation panel, external connection terminals (USB terminal, US A terminal that can be connected to various cables such as B cable, etc., and a recording medium insertion section. These components may be incorporated on the same surface as the display unit, but they may be incorporated on the side or back. It is preferable to have a recording medium for a digital photo frame as it improves the design. A memory that stores image data taken with a digital camera is inserted into the body insertion section. The image data can be captured and the captured image data can be displayed on the display portion 9703 .

[0394] The digital photo frame 9700 may also be configured to be capable of transmitting and receiving information wirelessly. It is also possible to configure the device so that desired image data can be wirelessly acquired and displayed.

[0395] FIG. 33(A) shows a portable gaming machine, which is composed of two cabinets, a cabinet 9881 and a cabinet 9891. The housing 9881 is connected to a connector 9893 so as to be openable and closable. A display unit 9883 is incorporated in the housing 9891. The portable gaming machine shown in 33(A) also includes a speaker unit 9884, a recording medium insertion unit 988 6, LED lamp 9890, input means (operation key 9885, connection terminal 9887, sensor 9 888 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, Chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration (including functions for measuring movement, smell or infrared rays), microphone 9889) Of course, the configuration of the portable gaming machine is not limited to the above, and at least the semiconductor device It is sufficient that the system is equipped with the above-mentioned equipment, and other auxiliary equipment may be provided as appropriate. The portable gaming machine shown in FIG. 33(A) uses a program or data recorded on a recording medium. It has the function of reading the information and displaying it on the display, and sharing information with other portable gaming machines via wireless communication. The functions of the portable gaming machine shown in Figure 33(A) are not limited to these. It can have a variety of functions.

[0396] FIG. 33(B) shows an example of a slot machine 9900, which is a large gaming machine. The machine 9900 has a display unit 9903 built into a housing 9901. Machine 9900 also has other operating means such as a start lever and stop switch, coin It is equipped with an insertion slot, a speaker, etc. Of course, the configuration of the slot machine 9900 is It is not limited to the above, but may be configured to include at least a semiconductor device, and other accessories may be included. The configuration can be appropriately provided.

[0397] FIG. 34(A) shows an example of a mobile phone 1000. The mobile phone 1000 has a housing In addition to the display unit 1002 incorporated in the 1001, the operation buttons 1003 and the external connection port 10 04, speaker 1005, microphone 1006, etc.

[0398] The mobile phone 1000 shown in FIG. 34(A) displays information by touching the display unit 1002 with a finger or the like. In addition, operations such as making a phone call or sending an email can be performed using the display. This can be done by touching 1002 with a finger or the like.

[0399] The screen of the display unit 1002 has three main modes. The first is a display mode that mainly displays images. The first mode is a display mode, and the second mode is an input mode that mainly inputs information such as characters. This is a display + input mode that combines two modes: display mode and input mode.

[0400] For example, when making a call or creating an email, the display unit 1002 is used to input characters. This is the main character input mode, and you can input characters displayed on the screen. It is preferable to display a keyboard or number buttons on most of the screen of the display unit 1002. Desirable.

[0401] In addition, the mobile phone 1000 may include a sensor for detecting tilt, such as a gyro or an acceleration sensor. By providing a detection device having the above configuration, the orientation of the mobile phone 1000 (portrait or landscape) can be determined and the display The screen display of the display unit 1002 can be automatically switched.

[0402] The screen mode can be switched by touching the display unit 1002 or by operating the housing 1001. This is done by operating the button 1003. Also, depending on the type of image displayed on the display unit 1002, For example, if the image signal to be displayed on the display unit is a video signal, If it is data, the display mode is switched to, and if it is text data, the input mode is switched to.

[0403] In the input mode, the optical sensor of the display unit 1002 detects a signal and displays it. If there is no input by touch operation of the part 1002 for a certain period of time, the screen mode is changed to the input mode. Alternatively, the display mode may be switched from the normal mode to the display mode.

[0404] The display unit 1002 can also function as an image sensor. By touching the palm or fingers to the sensor 02, the palm print, fingerprint, etc. can be captured and identity authentication can be performed. In addition, the display unit may be equipped with a backlight that emits near-infrared light or a sensor that emits near-infrared light. By using a scanning light source, it is also possible to capture images of finger veins, palm veins, etc.

[0405] FIG. 34B is also an example of a mobile phone. The mobile phone in FIG. 34B has a housing 9411. A display device 9410 including a display portion 9412 and an operation button 9413 is mounted on a housing 9401. An operation button 9402, an external input terminal 9403, a microphone 9404, a speaker 9405, and The communication device 9400 includes a light emitting unit 9406 that emits light when an incoming call is received, and has a display function. The display device 9410 can be attached to and detached from the communication device 9400 having a telephone function in two directions as shown by the arrows. Therefore, the display device 9410 and the communication device 9400 can be attached to each other with their short axes facing each other. The display device 9410 and the communication device 9400 can be attached to each other with their long axes facing each other. When only the function is required, the display device 9410 is removed from the communication device 9400. The communication device 9400 and the display device 9410 can be used independently. Images or input information can be sent and received via wired or wireless communication, and each can be recharged with a battery. Having Terry. [Explanation of symbols]

[0406] 100 boards 102 Conductive film 104 Conductive film 106 Insulating layer 108 Conductive film 110 Conductive film 112 Semiconductor film 114 Insulating layer 116 Conductive layer 117 Conductive Layer 119 Contact Hole 120 Gate wiring 122 Wiring 124 Wiring 125 Contact Hole 126 Wiring 127 Insulating Layer 128 Wiring 132 Electrode 136 Electrode 138 Electrode 140 Holding capacity section 150 pixel unit 152 transistors 154 Holding capacity section 156 transistors 158 Holding capacity section 161 Resist mask 162 Resist mask 163 Resist mask 164 Resist Mask 165 Resist Mask 168 Resist Mask 180 boards 182 PCB 232 Electrode 236 Electrode 238 Electrode 400 boards 401 Light blocking part 402 Diffraction Grating 403 Gray Tone Mask 411 Substrate 412 Semi-transparent part 413 Light blocking part 414 Halftone Mask 580 board 581 Thin-film transistor 583 Insulating Layer 587 Electrode layer 588 Electrode layer 589 Spherical particles 594 Cavity 595 Filling material 596 PCB 1000 mobile phones 1001 Case 1002 Display section 1003 Operation button 1004 External connection port 1005 Speaker 1006 Mike 102a conductive layer 102b Conductive layer 102c conductive layer 104a conductive layer 104b Conductive layer 108a conductive layer 108b Conductive layer 108c conductive layer 108d conductive layer 108e conductive layer 110a conductive layer 110b Conductive layer 110c conductive layer 112a Semiconductor layer 112b Semiconductor layer 113a n+ area 114a Insulating layer 114b insulating layer 118a Contact hole 118b Contact hole 171a Resist mask 171b Resist mask 171c Resist mask 172a Resist mask 172b Resist mask 172c Resist mask 181a Light blocking layer 181b Semi-transparent layer 183a Semi-transparent layer 183b Light blocking layer 2600 TFT substrate 2601 Opposing substrate 2602 Sealing material 2603 Element Layer 2604 Display element 2605 Colored layer 2606 Polarizing plate 2607 Polarizing plate 2608 Wiring circuit section 2609 Flexible wiring board 2610 cold cathode tube 2611 Reflector 2612 Circuit Board 2613 Diffuser 2631 Poster 2632 In-car advertising 2700 e-books 2701 Housing 2703 Housing 2705 ​​Display section 2707 Display section 2711 Shaft 2721 Power supply 2723 Operation Key 2725 Speaker 4001 board 4002 Pixel section 4003 Signal line driver circuit 4004 Scanning line driver circuit 4005 Sealing material 4006 board 4008 Liquid crystal layer 4010 Thin Film Transistor 4011 Thin-film transistor 4013 Liquid crystal element 4015 Connection terminal electrode 4016 Terminal electrode 4018 FPC 4019 Anisotropic conductive film 4020 Insulation layer 4021 Insulation layer 4030 Pixel electrode layer 4031 Counter electrode layer 4032 Insulation layer 4051 board 4501 Circuit Board 4502 Pixel section 4505 Sealing material 4506 board 4507 Filling material 4509 Thin-film transistor 4510 Thin-film transistor 4511 Light-emitting element 4512 Electroluminescent layer 4513 Electrode layer 4515 Connection terminal electrode 4516 Terminal electrode 4517 Electrode layer 4519 Anisotropic conductive film 4520 Bulkhead 5080 pixels 5081 Transistor 5082 Liquid crystal element 5083 Capacitor 5084 Wiring 5085 Wiring 5086 Wiring 5087 Wiring 5088 Electrode 5101 dashed line 5102 solid line 5103 dashed line 5104 Solid line 5105 solid line 5106 Solid line 5107 Solid line 5108 Solid line 5121 images 5122 images 5123 images 5124 area 5125 area 5126 area 5127 Vector 5128 Image Generation Vectors 5129 area 5130 Object 5131 area 5300 board 5301 Pixel unit 5302 Scanning line driver circuit 5303 Signal line driver circuit 5400 board 5401 Pixel unit 5402 Scanning line driver circuit 5403 Signal line driver circuit 5404 Scanning line driver circuit 590a black area 590b White area 6400 pixels 6401 Switching transistor 6402 Drive transistor 6403 Capacitor element 6404 Light-emitting element 6405 signal line 6406 scan lines 6407 Power line 6408 Common electrode 6420 pixels 6423 Capacitor element 6426 Wiring 7001 TFT 7002 Light-emitting element 7003 Cathode 7004 Light-emitting layer 7005 Anode 7011 Driving TFT 7012 Light-emitting element 7013 Cathode 7014 Light-emitting layer 7015 Anode 7016 Shielding membrane 7017 Conductive film 7021 Driving TFT 7022 Light-emitting element 7023 Cathode 7024 Light-emitting layer 7025 Anode 7027 Conductive film 9400 Communication Equipment 9401 Housing 9402 Operation button 9403 External input terminal 9404 Microphone 9405 Speaker 9406 Light-emitting part 9410 Display device 9411 Housing 9412 Display section 9413 Operation button 9600 Television Equipment 9601 Housing 9603 Display section 9605 Stand 9607 Display section 9609 Operation Key 9610 Remote Controlled Machine 9700 Digital Photo Frame 9701 Housing 9703 Display section 9881 Case 9882 Display section 9883 Display section 9884 Speaker section 9885 Operation Key 9886 Recording medium insertion section 9887 Connection terminal 9888 Sensor 9889 Microphone 9890 LED Lamp 9891 Case 9893 Connection section 9900 slot machine 9901 Housing 9903 Display section 4503a Signal line driver circuit 4504a Scanning line driver circuit 4518a FPC 5121a Image 5121b Image 5122a Image 5122b image 5123a Image 5123b Image

Claims

1. The pixel includes a first transistor, a second transistor, a capacitor, and a light-emitting element, a source or a drain of the first transistor is electrically connected to a gate of the second transistor; a gate of the second transistor electrically connected to the capacitor; a source or a drain of the second transistor is electrically connected to the light-emitting element, a first insulating layer, a first oxide layer, a second oxide layer, a third oxide layer, a second insulating layer, and a fourth oxide layer; the first insulating layer has a region that functions as a gate insulating layer of the second transistor and a region that functions as a dielectric of the capacitor; the first oxide layer has a region in contact with the top surface of the first insulating layer; the first oxide layer has a channel formation region of the first transistor; the second oxide layer has a region in contact with the top surface of the first insulating layer; the second oxide layer has a channel formation region of the second transistor; the third oxide layer has a region in contact with the top surface of the first insulating layer; the third oxide layer has a region that functions as one of a pair of electrodes of the capacitor; the second insulating layer has a region disposed above the first oxide layer, a region disposed above the second oxide layer, and a region disposed above the third oxide layer; the second insulating layer has a region that functions as a color filter; the fourth oxide layer has a region disposed above the second insulating layer; the fourth oxide layer has a region that functions as a pixel electrode of the light-emitting element, In a plan view of the pixel, a channel length direction of the first transistor is a direction along a first direction, In a plan view of the pixel, a channel length direction of the second transistor is a direction along the first direction.

2. The pixel includes a first transistor, a second transistor, a capacitor, and a light-emitting element, a source or a drain of the first transistor is electrically connected to a gate of the second transistor; a gate of the second transistor electrically connected to the capacitor; a source or a drain of the second transistor is electrically connected to the light-emitting element, a first insulating layer, a first oxide layer, a second oxide layer, a third oxide layer, a second insulating layer, and a fourth oxide layer; the first oxide layer, the second oxide layer, and the third oxide layer are light-transmitting; the first insulating layer has a region that functions as a gate insulating layer of the second transistor and a region that functions as a dielectric of the capacitor; the first oxide layer has a region in contact with the top surface of the first insulating layer; the first oxide layer has a channel formation region of the first transistor; the second oxide layer has a region in contact with the top surface of the first insulating layer; the second oxide layer has a channel formation region of the second transistor; the third oxide layer has a region in contact with the top surface of the first insulating layer; the third oxide layer has a region that functions as one of a pair of electrodes of the capacitor; the second insulating layer has a region disposed above the first oxide layer, a region disposed above the second oxide layer, and a region disposed above the third oxide layer; the second insulating layer has a region that functions as a color filter; the fourth oxide layer has a region disposed above the second insulating layer; the fourth oxide layer has a region that functions as a pixel electrode of the light-emitting element, In a plan view of the pixel, a channel length direction of the first transistor is a direction along a first direction, In a plan view of the pixel, a channel length direction of the second transistor is a direction along the first direction.

3. In claim 1 or claim 2, The display device, wherein the first oxide layer, the second oxide layer, and the third oxide layer contain indium.

4. In claim 1 or claim 2, The display device, wherein the first oxide layer, the second oxide layer, and the third oxide layer contain indium, gallium, and zinc.

Images