Wafer grinding method

Abstract

To provide a grinding method for a wafer capable of grinding both surfaces of the wafer so as to make a thickness over the entire surface.SOLUTION: The method includes: a protective member formation step of forming a protective member F on one surface of a wafer W; a first grinding step of setting a chuck rotary shaft 13 and grindstone rotary shafts (spindles) 23, 33 into a first inclination relation considering sinking of the wafer W due to compression of the protective member F during grinding, and grinding the entire other surface of the wafer W; a protective member peeling step of peeling the protective member F; and a second grinding step of holding the other surface of the wafer W on a holding surface 10a, setting the chuck rotary shaft 13 and the grindstone rotary shafts 23, 33 into a second inclination relation in which lower surfaces of annular grindstones 25b, 35b at parts in contact with the wafer W and the holding surface 10a are in parallel with each other, and grinding the entire one surface of the wafer W to a predetermined thickness by bringing the lower surfaces of the annular grindstones 25b, 35b into contact with a radial part of the one surface of the wafer W.SELECTED DRAWING: Figure 2

Claims

[Claim 1] A wafer grinding method comprising grinding both sides of a sliced ​​wafer with an annular grinding wheel, A protective member forming step involves forming a protective member by spreading a liquid resin over the entire surface of one side of a sliced ​​wafer and curing it, A first grinding step involves holding the slice wafer with the conical holding surface of the chuck table via the protective member, and bringing the lower surface of the annular grinding wheel into contact with the radial portion of the other side of the rotating slice wafer to grind the entire other side of the slice wafer. After the first grinding step, a protective member peeling step is performed to peel off the protective member, After the protective member removal step, the other side of the slice wafer is held on the holding surface, and the lower surface of the annular grinding wheel is brought into contact with the radial portion of one side of the rotating slice wafer to grind the entire surface of one side of the slice wafer to a predetermined thickness in a second grinding step. It consists of, The first grinding step and the second grinding step each comprise a rough grinding step using a rough grinding ring wheel and a finish grinding step using a finish grinding ring wheel, respectively. The first grinding step is, A first rough grinding step is performed in which the chuck rotation axis passing through the center of the holding surface and the rough grinding wheel rotation axis passing through the center of the rough grinding annular grinding wheel are set to a first rough grinding inclination relationship, and the entire other surface of the slice wafer is rough ground with the rough grinding annular grinding wheel, The system includes a first finishing grinding step in which the chuck rotation axis and the finishing grinding wheel rotation axis passing through the center of the finishing grinding annular grinding wheel are set to a first finishing grinding inclination relationship, and the other surface of the slice wafer is finished grinding with the finishing grinding annular grinding wheel, The second grinding step is, The chuck rotation axis and the rough grinding wheel rotation axis are set to a second rough grinding inclination relationship, and the entire surface of one side of the slice wafer is roughly ground with the rough grinding annular grinding wheel in a second rough grinding step, The system includes a second finishing grinding step in which the chuck rotation axis and the finishing grinding wheel rotation axis are set to the inclination for the second finishing grinding, and the other surface of the slice wafer is finished grinding with the finishing grinding annular grinding wheel, The inclination angle between the chuck rotation axis and the coarse grinding wheel rotation axis differs between the first coarse grinding step and the second coarse grinding step. The inclination angle between the chuck rotation axis and the finishing grinding wheel rotation axis is different between the first finishing grinding step and the second finishing grinding step. A method for grinding wafers. [Claim 2] The inclination angle between the chuck rotation axis and the finishing grinding wheel rotation axis in the first finish grinding step is smaller than the inclination angle between the chuck rotation axis and the coarse grinding wheel rotation axis in the first rough grinding step. The inclination angle between the chuck rotation axis and the finishing grinding wheel rotation axis in the second finish grinding step is smaller than the inclination angle between the chuck rotation axis and the coarse grinding wheel rotation axis in the second rough grinding step. A method for grinding a wafer according to claim 1.

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