Wafer processing apparatus

Abstract

A wafer processing apparatus according to an embodiment of the present application can include a turntable rotating about a rotation axis to position a grinding area for grinding a wafer and a polishing area for polishing the wafer, a plurality of chuck tables disposed on the turntable for the wafer to be placed thereon, a grinding device for grinding the wafer positioned at the grinding area, a polishing device for polishing the wafer ground by the grinding device, a frame dividing the grinding area and the polishing area on the turntable, and a moisture removing portion disposed on the frame for removing moisture of the wafer moved from the grinding area to the polishing area by rotation of the turntable.

Description

Technical Field

[0001] This invention relates to a wafer processing apparatus. Background Technology

[0002] Grinding refers to the process of bringing a workpiece into contact with and rubbing it against other objects to smooth its surface. Especially in wafer analysis processes, grinding diced wafer samples is an essential and widely used technique. Furthermore, wafer grinding processes typically employ chemical and mechanical grinding methods. Chemical and mechanical grinding involve bringing the workpiece, such as a wafer, into contact with a grinding pad while simultaneously supplying a grinding slurry.

[0003] To promote the miniaturization and weight reduction of semiconductor wafers, the back side of the wafer is ground to achieve a specified thickness. However, when the back side of the wafer is ground, a grinding deformation layer with a thickness of about 1 μm composed of microcracks is generated on the back side of the wafer. Furthermore, when the wafer thickness is reduced to less than 100 μm, there is a problem of reduced flexural strength of the semiconductor device.

[0004] To address the aforementioned issues, after grinding the back side of the wafer to achieve a specified thickness, the back side of the semiconductor wafer is polished to remove the grinding deformation layer generated on the back side of the wafer, thereby preventing a decrease in the flexural strength of the semiconductor wafer.

[0005] In polishing, the dry polishing method is mainly used, which does not require the supply of slurry during the grinding process and does not generate waste liquid disposal problems.

[0006] However, since dry polishing is the most time-consuming process in the grinding process, the drying time of the wafer needs to be reduced in order to shorten the overall grinding process time. Summary of the Invention

[0007] The problem the invention aims to solve

[0008] The purpose of this invention is to provide a wafer processing apparatus that, by arranging a moisture removal unit between the grinding zone and the polishing zone, aims to shorten the drying time in the dry polishing process of the wafer, thereby improving productivity.

[0009] The technical problems to be solved by the present invention are not limited to those mentioned above. Those skilled in the art can clearly understand other technical problems not mentioned from the following description.

[0010] means for solving problems

[0011] A wafer processing apparatus according to an embodiment of the present invention may include: a turntable that rotates about a rotation axis to be positioned to a grinding area for grinding a wafer and a polishing area for polishing a wafer; a plurality of chuck stages disposed on the turntable for placing the wafer thereon; a grinding device for grinding the wafer located in the grinding area; a polishing device for polishing the wafer after grinding by the grinding device; a frame that divides the grinding area and the polishing area on the turntable; and a moisture removal unit disposed on the frame for removing moisture from the wafer that moves from the grinding area to the polishing area by the rotation of the turntable.

[0012] In one embodiment of the present invention, the moisture removal unit may include an air nozzle that sprays gas toward the wafer at a preset angle.

[0013] In one embodiment of the present invention, the grinding apparatus may include a grinding wheel and a first rotating device for rotating the grinding wheel.

[0014] In one embodiment of the present invention, the grinding device may include: a grinding wheel, and a second rotating device that causes the grinding wheel to rotate.

[0015] In one embodiment of the present invention, a swing nozzle may be included, which is disposed between the chuck stage and the grinding wheel for spraying gas toward the wafer.

[0016] In one embodiment of the invention, a swing nozzle cover may be included, extending from the swing nozzle to cover the space between the chuck stage and the grinding wheel.

[0017] In one embodiment of the present invention, the oscillating nozzle cover may include: a column portion extending from the oscillating nozzle in a direction intersecting the oscillating nozzle's movement direction; and a wing portion extending from the end of the column portion in a direction parallel to the oscillating nozzle's movement direction.

[0018] In one embodiment of the present invention, when the oscillating nozzle is located between the chuck table and the grinding wheel, the width of the wing can be greater than the longest distance from the oscillating nozzle to the edge of the grinding wheel when viewed from above.

[0019] In one embodiment of the present invention, the height of the column may be less than the distance from the oscillating nozzle to the grinding wheel.

[0020] In one embodiment of the present invention, the invention includes: a turntable that rotates about a rotation axis to be positioned in a grinding area for grinding a wafer and a polishing area for polishing a wafer; a plurality of chuck stages disposed on the turntable for placing the wafer thereon; a grinding apparatus for grinding the wafer located in the grinding area; a polishing apparatus for polishing the wafer after it has been ground by the grinding apparatus; and a frame that divides the grinding area and the polishing area on the turntable, wherein the polishing area may have: a oscillating nozzle disposed between the chuck stages and the polishing apparatus for spraying gas toward the wafer; and an oscillating nozzle cover extending from the oscillating nozzle to cover the space between the chuck stages and the polishing wheel.

[0021] In one embodiment of the present invention, the oscillating nozzle cover may include: a column portion extending from the oscillating nozzle along the direction of the grinding wheel; and a wing portion extending from the column portion along the center direction of the chuck table.

[0022] In one embodiment of the present invention, when the oscillating nozzle is located between the chuck table and the grinding wheel, the width of the wing can be greater than the longest distance from the oscillating nozzle to the edge of the grinding wheel when viewed from above.

[0023] In one embodiment of the present invention, the height of the column may be less than the distance from the oscillating nozzle to the grinding wheel.

[0024] Other aspects, features, and advantages will become clear from the following drawings, claims, and detailed description of the invention.

[0025] Invention Effects

[0026] According to an embodiment of the present invention, a wafer processing apparatus can perform preliminary drying of the wafer by providing a moisture removal section between the grinding zone and the polishing zone, thereby shortening the dry polishing time. Furthermore, the wafer processing apparatus can shorten the overall polishing process time, thus achieving economical and efficient polishing.

[0027] In addition, by equipping the upper end of the oscillating nozzle in the grinding area with an oscillating nozzle cover, the wafer processing equipment can prevent particles or grinding fluid from splashing onto other parts of the wafer processing equipment during dry polishing, and can also achieve rapid rotation of the oscillating nozzle, thereby shortening the dry polishing process time.

[0028] The effects of the present invention are not limited to those described above, but should be understood to include all effects that can be inferred from the detailed description of the invention or the composition of the invention as set forth in the claims. Attached Figure Description

[0029] Figure 1This is a perspective view of a wafer processing apparatus according to an embodiment of the present invention.

[0030] Figure 2 yes Figure 1 A plan view of the wafer processing equipment.

[0031] Figure 3 It is shown Figure 1 A diagram of a portion of the grinding area of ​​a wafer processing unit.

[0032] Figure 4 yes Figure 1 A side view of the grinding area of ​​the wafer processing equipment.

[0033] Figure 5 Looking from above Figure 4 Floor plan.

[0034] Explanation of reference numerals in the attached figures

[0035] 100: Wafer processing equipment

[0036] 110: Turntable

[0037] 120: Chuck stand

[0038] 130: Coarse grinding device

[0039] 140: Grinding device

[0040] 150: Grinding device

[0041] 160: Frame

[0042] 170: Moisture Removal Section

[0043] 180: Oscillating nozzle Detailed Implementation

[0044] The invention will be described below with reference to the accompanying drawings. However, the invention can be implemented in various different forms and is therefore not limited to the embodiments described herein. Furthermore, for the purpose of clearly illustrating the invention in the drawings, parts unrelated to the description have been omitted, and similar reference numerals have been used throughout the specification for similar portions.

[0045] While terms such as "first," "second," "A," and "B" can be used to describe multiple constituent elements, the constituent elements described above should not be limited to these terms. These terms are used only to distinguish one constituent element from others. For example, without departing from the scope of this invention, a first constituent element may be named a second constituent element, and similarly, a second constituent element may be named a first constituent element. The term "and / or" includes a combination of multiple related listed items or any one of multiple related listed items.

[0046] Throughout the specification, when one part is "connected (coupled, contacted, joined)" to another part, this includes not only "direct connection" but also "indirect connection" where another component is inserted between them. Furthermore, when a part "includes" a certain constituent element, this means that, unless otherwise stated, other constituent elements may be included, rather than excluded.

[0047] The terminology used in this specification is for illustrative purposes only and is not intended to limit the invention. Unless the context clearly specifies otherwise, singular expressions include plural expressions.

[0048] The terms "comprising" or "having" used in this specification are used to specify the presence of features, figures, steps, actions, constituent elements, components, or combinations thereof described in the specification, and do not preclude the presence or additional possibilities of more than one other feature, figure, step, action, constituent element, component, or combination thereof.

[0049] When an element or layer is described as being "on" or "above" another element or layer, it includes both cases where it is directly above another element or layer and cases where there are other layers or elements in between. Conversely, when an element is described as being "directly on" or "directly above," it means that there are no other elements or layers in between.

[0050] The wafer can be initially designed with a thickness of approximately 775 μm. The wafer fabrication process reduces this thickness to a predetermined thickness of less than 100 μm. The final wafer thickness can vary depending on the type of semiconductor product or customer requirements. This wafer grinding process can be performed in the following sequence: a rough grinding step, which grinds the wafer thickness from the initial thickness to a predetermined first thickness; a grinding step, which grinds the wafer thickness after the rough grinding step to a second thickness thinner than the first thickness; and a polishing step, which uses polishing slurry to polish the back side of the wafer from the grinding step to the final thickness.

[0051] The wafer can be formed from silicon or from semiconductor materials other than silicon, such as gallium nitride (GaN) and silicon carbide (SiC). However, the wafer of this invention is not limited to materials, shapes, structures, or sizes. A resin protective strip with the same diameter as the wafer can be attached to the surface of the wafer to reduce damage to the surface side. Patterns can be formed on the surface of the wafer, and it may have been cut to the size of the analytical sample.

[0052] Figure 1 This is a perspective view of a wafer processing apparatus according to an embodiment of the present invention. Figure 2 yes Figure 1A plan view of the wafer processing equipment. Figure 3 It is shown Figure 1 A diagram of a portion of the grinding area of ​​a wafer fabrication unit. Figure 4 yes Figure 1 A side view of the grinding area of ​​the wafer processing equipment. Figure 5 Looking from above Figure 4 Floor plan.

[0053] The following is for reference Figures 1 to 5 The structure and drive of a wafer processing apparatus 100 according to an embodiment of the present invention will be described in detail.

[0054] According to an embodiment of the present invention, a wafer processing apparatus 100 may include a turntable 110, a chuck table 120, a rough grinding device 130, a grinding device 140, a polishing device 150, a frame 160, a moisture removal unit 170, and a oscillating nozzle 180.

[0055] The turntable 110 rotates around the rotation axis C, thereby positioning the wafer in the grinding area G and the polishing area P.

[0056] The turntable 110 can be made in the shape of a disk and can rotate and move at a certain angle at preset intervals, thereby performing rough grinding, grinding, and polishing on the wafer placed on the turntable 110. For example, as shown in the figure, when the wafer processing apparatus 100 performs the three processes of rough grinding, grinding, and polishing, the wafer processing apparatus 100 can be divided into four areas (including a wafer preparation area), and the turntable 110 can rotate at an angle of 90 degrees. However, the invention is not limited to this; when only grinding and polishing processes are performed, it can of course rotate at an angle of 120 degrees. A bearing for achieving smooth rotation can be incorporated into the rotation axis C of the turntable 110.

[0057] During the various processes of wafer fabrication, the turntable 110 can rotate and move multiple chuck stages 120 together, so that any one chuck stage 120 can be rotated and moved to the position of an adjacent chuck stage 120.

[0058] A rotary drive unit (not shown) for rotating the turntable 110 is provided at the lower end of the turntable 110 so that the turntable 110 can be rotated according to a preset time.

[0059] The chuck stage 120 is configured on the turntable 110 and provides space for placing wafers.

[0060] The chuck stage 120 is radially arranged along the circumference of the turntable 110 at the edge, and can rotate together with the turntable 110 at a preset angle as the turntable 110 rotates.

[0061] In this specification, the chuck stage 120 located in the wafer waiting area can be named the waiting stage, the chuck stage 120 located in the rough grinding area R can be named the first chuck stage 121, the chuck stage 120 located in the grinding area G can be named the second chuck stage 122, and the chuck stage 120 located in the polishing area P can be named the third chuck stage 120.

[0062] In the waiting area, wafers can be supplied or processed wafers can be retrieved. At this time, the conveyor A can transfer wafers one by one from the housing (not shown) to the waiting table. The conveyor A can be a robotic arm that can pick up and transport wafers. The upper parts of the first to third chuck stages 121, 122, and 123 can be respectively equipped with a rough grinding device 130, a grinding device 140, and a polishing device 150 to provide processing space for the wafers picked up on each chuck stage 120.

[0063] The rough grinding device 130 can perform rough grinding on the wafers arranged in the rough grinding area.

[0064] Specifically, the rough grinding device 130 is used to rough grind the back side of the wafer to reduce the wafer thickness. The rough grinding can be performed on the initial back side of the wafer by a rough grinding wheel.

[0065] The coarse grinding wheel has a mesh size of 700-900, for example, 800 mesh, and can coarsely grind one side of the wafer to a thickness of 20-60 μm thicker than the final thickness of the target wafer.

[0066] The grinding device 140 can grind the wafer located in the grinding area G.

[0067] Specifically, the grinding device 140 can perform precision grinding on the wafer that has been rough ground and is positioned in the grinding area G by rotating the turntable 110.

[0068] The grinding device 140 is used to process one side of the wafer after rough grinding by the rough grinding device 130 to a preset primary target thickness. It may include a grinding wheel 142 and a first rotating device 141 for rotating the grinding wheel 142.

[0069] The first rotating device 141 can be connected to the grinding wheel 142 to provide power for rotating the grinding wheel 142. The rotation speed and direction of the first rotating device 141 can be controlled by a control unit (not shown).

[0070] The first rotating device 141 can be a spindle motor. In this case, it can be a structure in which the grinding wheel 142 is attached to the rotating shaft of the spindle motor.

[0071] The grinding wheel 142 is detachably mounted on the lower end of the first rotating device 141. It rotates by receiving power from the first rotating device 141, thereby grinding the wafer. The grinding wheel 142 contacts the wafer while rotating at high speed, thereby grinding the wafer through rotational friction.

[0072] The grinding wheel 142 has a grit size of 10,000 to 15,000, for example, 12,000, which can precisely grind the back side of the wafer after coarse grinding to the target thickness.

[0073] The grinding device 150 can grind the wafer after it has been ground by the grinding device 140.

[0074] Specifically, the grinding apparatus 150 can perform polishing processing on the wafer that is positioned in the grinding area P by the rotation of the turntable 110 after the grinding process is completed, using chemical and physical methods.

[0075] The grinding apparatus 150 may include a grinding wheel 152 and a second rotating device 151 that causes the grinding wheel 152 to rotate.

[0076] The second rotating device 151 can be connected to the grinding wheel 152 to provide power for rotating the grinding wheel 152. For example, the second rotating device 151 can be a spindle motor.

[0077] The grinding wheel 152 can perform grinding by repeatedly moving in a straight line and rotating on a curved surface while in contact with the wafer.

[0078] The grinding wheel 152 has a hardness greater than that of the wafer, thus enabling it to process the surface of the wafer to be processed.

[0079] The grinding wheel 152 may include a grinding pad made of foamed polyurethane or non-woven fabric. However, it is not limited to this, and can be used without restriction as long as it includes materials for grinding wafers.

[0080] The first rotating device 141 and the second rotating device 151 can be connected to a control unit (not shown) to enable operation. The control unit (not shown) can receive data about the wafer grinding range and generate control signals for rotating the grinding wheel 142 and the polishing wheel 152 based on the preset settings corresponding to the data.

[0081] The frame 160 can divide the grinding area G and the polishing area P on the rotary table 110.

[0082] A moisture removal unit 170 may be configured on the frame 160 that divides the grinding zone G and the polishing zone P.

[0083] The moisture removal unit 170 is disposed on the frame 160 and can be used to remove moisture from the wafer that moves from the grinding area G to the polishing area P by the rotation of the turntable 110.

[0084] The moisture removal unit 170 according to an embodiment of the present invention may include an air nozzle that sprays gas toward the wafer at a preset angle. The air nozzle can remove the polishing slurry T by blowing air toward the chuck stage 120 in the form of an air curtain or an air knife.

[0085] The angle at which the air nozzle supplies air can be adjusted within the range of 0 degrees to 90 degrees, with 0 degrees in the direction perpendicular to the turntable 110 and 90 degrees in the direction parallel to the turntable 110 and toward the second chuck table 122.

[0086] The air nozzle can be fixed at a preset angle to spray air, or it can rotate continuously between 0 and 90 degrees to spray air as needed.

[0087] When the air nozzle rotates and sprays air, air can be evenly sprayed onto the second chuck stage 122, thereby effectively removing the grinding fluid T.

[0088] At this time, the rotation speed of the air nozzle is controlled by a control unit (not shown), and can vary depending on the amount of residual polishing slurry T on the chuck stage 120. The air nozzle can operate by sensing the amount and distribution of the residual polishing slurry T through the control unit (not shown). For example, when the polishing slurry T is concentrated on a part of the wafer, the air nozzle is fixed at a certain angle and supplies air to the part that needs to be dried in a concentrated manner. Then, when the polishing slurry on the wafer is evenly distributed, the entire side of the wafer can be dried by the rotational motion.

[0089] The moisture removal unit 170 can perform preliminary drying of the residual polishing slurry T remaining on the upper end of the second chuck stage 122 in the grinding area G after the grinding process. Therefore, the wafer drying time in the grinding area P can be shortened and the drying efficiency can be improved.

[0090] As another embodiment of the present invention, the moisture removal unit 170 can remove the grinding fluid T on the upper end of the chuck stage 120 by absorbing or wiping away moisture using a component such as a sponge or a brush.

[0091] Furthermore, as another embodiment of the invention, a sponge and a brush can be provided together with the air nozzle. While the wafer dries under the action of air discharged from the air nozzle, moisture can be removed by absorbing the polishing slurry T with the sponge or wiping it off with the brush. In this case, the polishing slurry T on the wafer can be removed more effectively.

[0092] On the other hand, the wafer surface after initial moisture removal by the moisture removal section 170 can be dried a second time in the grinding area P by the oscillating nozzle 180.

[0093] The oscillating nozzle 180 is positioned between the chuck stage 120 and the polishing wheel 152 and can be used to spray gas toward the wafer. The oscillating nozzle 180 can remove residual polishing slurry T on the wafer by spraying air toward it.

[0094] At this time, the air pressure of the oscillating nozzle 180 can be adjusted. The wafer processing apparatus 100 of the present invention can improve the grinding accuracy by appropriately adjusting the air pressure ejected from the oscillating nozzle 180, and can easily remove wastewater or particles generated during the grinding process.

[0095] The oscillating nozzle 180 may include a drive unit 181 and a nozzle unit 182.

[0096] The drive unit 181 can be configured at a certain height in a direction intersecting the rotation direction of the oscillating nozzle 180. In this case, the drive unit 181 can rotate the oscillating nozzle 180 from the edge portion of the wafer toward the center of the wafer pointing toward the rotation axis C.

[0097] The drive unit 181 may be equipped with a motor (not shown) for rotating the oscillating nozzle 180. Additionally, a control unit (not shown) may be included, which continuously sprays air until the wafer surface is completely dry, and stops spraying once the surface is completely dry.

[0098] The nozzle section 182 can rotate and move around the drive section 181 at the upper end of the chuck stage 120 while spraying air onto the wafer disposed on the chuck stage 120.

[0099] The end of the nozzle section 182 can be disposed on the upper end of the chuck stage 120, and the end is curved, so that air can be easily sprayed onto the entire circular wafer.

[0100] Air can be discharged through one or more air holes 1821 disposed on the nozzle part 182.

[0101] The air hole 1821 can be formed as a long, narrow slit or formed by multiple holes.

[0102] The more air holes 1821 there are, the faster the drying speed can be, and when multiple air holes 1821 are arranged at certain intervals, the wafer can be dried uniformly.

[0103] An oscillating nozzle cover 183 may be configured on the upper end of the oscillating nozzle 180.

[0104] A oscillating nozzle cap 183 extends from the oscillating nozzle 180, thereby covering the area between the chuck stage 120 and the grinding wheel 152. The end of the oscillating nozzle cap 183 may be curved to correspond to the shape of the nozzle portion 182. The oscillating nozzle cap 183 can prevent the polishing slurry T from splashing onto other components of the wafer processing apparatus 100, including the grinding wheel 152, due to air ejected from the oscillating nozzle 180. As a comparative embodiment, without the oscillating nozzle cap, the faster the oscillation speed of the oscillating nozzle 180, the wider the splash range of the polishing slurry T, thus limiting the oscillation speed of the oscillating nozzle 180.

[0105] In contrast, the wafer processing apparatus 100 according to an embodiment of the present invention is equipped with a oscillating nozzle cover 183, which prevents contamination of other components due to splashing of polishing fluid T even when the oscillating nozzle 180 rotates rapidly, thereby increasing the oscillation speed of the oscillating nozzle 180 without being limited by the oscillation speed of the oscillating nozzle 180.

[0106] Therefore, the wafer processing apparatus 100 of the present invention can quickly remove moisture from the wafer during the dry polishing process, thereby shortening the dry polishing process time and improving the overall productivity.

[0107] The oscillating nozzle cover 183 prevents the grinding wheel 152 from becoming contaminated, thereby reducing the occurrence of defects in the dry polishing process.

[0108] The swing nozzle cover 183 may be equipped with a column 183b and a wing 183a.

[0109] The column portion 183b may extend in a direction (z-direction) intersecting the movement direction of the oscillating nozzle 180. Specifically, the column portion 183b may have a certain height and extend in the direction of the grinding wheel 152.

[0110] Reference Figure 4 The height D1 of the column portion 183b can be less than the distance D2 from the oscillating nozzle 180 to the grinding wheel 152. Therefore, the oscillating nozzle cover 183 can prevent the grinding wheel 152 from being contaminated within a range that does not interfere with the grinding wheel 152.

[0111] The wing 183a can extend from the end of the column 183b in a direction parallel to the direction of movement of the oscillating nozzle 180. Figure 4 (Extends in the x-direction).

[0112] The wing 183a prevents the polishing fluid T from splashing, thereby avoiding contamination of components within the wafer processing apparatus 100, including the polishing wheel 152.

[0113] Reference Figure 5When the oscillating nozzle 180 is located between the chuck table 120 and the grinding wheel 152, in top view (xy plane), the width D4 of the wing 183a can be greater than the longest distance D3 from the oscillating nozzle 180 to the edge of the grinding wheel 152.

[0114] Therefore, the oscillating nozzle cover 183 can increase the oscillation speed of the oscillating nozzle 180 during the drying process of the wafer, thereby quickly removing moisture from the wafer. Thus, the oscillating nozzle cover 183 not only improves the productivity of the wafer processing apparatus 100 by shortening the dry polishing process time, but also effectively prevents the polishing wheel 152 from being contaminated by the polishing slurry T splashing onto it.

[0115] According to an embodiment of the present invention, a wafer processing apparatus 100 can initially remove moisture from the upper part of the wafer before the wafer moves from the grinding region G to the polishing region P by including a moisture removal section at one end of the frame.

[0116] Therefore, the wafer processing apparatus 100 can improve the grinding quality and shorten the wafer drying time during the dry polishing process performed in the grinding area P. Furthermore, by shortening the longest-running wafer drying time, the wafer processing apparatus 100 can ultimately improve its productivity.

[0117] Furthermore, by configuring a swivel nozzle cover 183 on the upper end of the swivel nozzle 180, the wafer processing apparatus 100 can shorten the dry polishing process time and minimize the splashing of polishing slurry T, wastewater, particles, etc., onto other components of the wafer processing apparatus 100, including the polishing wheel 152. Therefore, the wafer processing apparatus 100 can achieve a more precise polishing process with the uncontaminated polishing wheel 152 and can extend the overall lifespan of the wafer processing apparatus 100.

[0118] The above description of the present invention is merely illustrative, and those skilled in the art will understand that it can be easily modified into other specific forms without changing the technical concept or essential features of the invention. Therefore, it should be understood that the above embodiments are exemplary in all respects and not restrictive. For example, constituent elements described as a single type can be implemented in a distributed manner; similarly, constituent elements described as distributed can also be implemented in a combined manner.

[0119] The scope of this invention is indicated by the claims and should be interpreted to include all variations or modifications derived from the meaning, scope, and equivalent concepts of the claims.

Claims

1. A wafer processing apparatus, characterized in that, include: The turntable rotates around a rotation axis to position itself in the grinding area for grinding the wafer and the polishing area for polishing the wafer. Multiple chuck stages are arranged on the turntable for placing the wafer thereon. A grinding apparatus that grinds the wafer located in the grinding area. A grinding apparatus for grinding the wafer after it has been ground by the grinding apparatus. A frame that divides the grinding area and the polishing area on the turntable, and A moisture removal unit, disposed on the frame, is used to remove moisture from the wafer that moves from the grinding area to the polishing area by the rotation of the turntable.

2. The wafer processing apparatus according to claim 1, characterized in that, The moisture removal unit includes an air nozzle that sprays gas toward the wafer at a preset angle.

3. The wafer processing apparatus according to claim 1, characterized in that, The grinding apparatus includes: Grinding wheels, and A first rotating device rotates the grinding wheel.

4. The wafer processing apparatus according to claim 1, characterized in that, The grinding apparatus includes: Grinding wheel, and The second rotating device rotates the grinding wheel.

5. The wafer processing apparatus according to claim 1, characterized in that, The wafer processing apparatus includes: A oscillating nozzle, positioned between the chuck stage and the grinding wheel, is used to inject gas toward the wafer.

6. The wafer processing apparatus according to claim 5, characterized in that, The wafer processing apparatus includes: A swing nozzle cap extends from the swing nozzle to cover the space between the chuck stage and the grinding wheel.

7. The wafer processing apparatus according to claim 6, characterized in that, The swing nozzle cover includes: A column portion extending from the oscillating nozzle in a direction intersecting the direction of movement of the oscillating nozzle; and The wing extends from the end of the column in a direction parallel to the direction of movement of the oscillating nozzle.

8. The wafer processing apparatus according to claim 7, characterized in that, When the oscillating nozzle is located between the chuck table and the grinding wheel, the width of the wing is greater than the longest distance from the oscillating nozzle to the edge of the grinding wheel when viewed from above.

9. The wafer processing apparatus according to claim 7, characterized in that, The height of the column is less than the distance from the oscillating nozzle to the grinding wheel.

10. A wafer processing apparatus, characterized in that, include: The turntable rotates around a rotation axis to position itself in the grinding area for grinding the wafer and the polishing area for polishing the wafer. Multiple chuck stages are arranged on the turntable for placing the wafer thereon. A grinding apparatus that grinds the wafer located in the grinding area. A grinding apparatus for grinding the wafer after it has been ground by the grinding apparatus, and A frame that divides the grinding area and the polishing area on the turntable; The grinding area has the following characteristics: A oscillating nozzle, positioned between the chuck stage and the grinding apparatus, is used to inject gas toward the wafer. A swing nozzle cap extends from the swing nozzle to cover the space between the chuck stage and the grinding wheel.

11. The wafer processing apparatus according to claim 10, characterized in that, The swing nozzle cover includes: A column portion extending from the oscillating nozzle along the direction of the grinding wheel; and A wing that extends from the column along the center of the chuck table.

12. The wafer processing apparatus according to claim 10, characterized in that, When the oscillating nozzle is located between the chuck table and the grinding wheel, the width of the wing is greater than the longest distance from the oscillating nozzle to the edge of the grinding wheel when viewed from above.

13. The wafer processing apparatus according to claim 10, characterized in that, The height of the column is less than the distance from the oscillating nozzle to the grinding wheel.

Images