Antenna structure and plasma generator using the same
The antenna structure with segmented capacitive elements and cooling water channel addresses plasma generator instability and durability issues, enabling efficient, large-area plasma generation for displays and semiconductors.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- EN2CORE TECH INC
- Filing Date
- 2025-04-30
- Publication Date
- 2026-06-12
AI Technical Summary
Conventional inductive coupling type plasma generators face instability in plasma control and durability issues due to factors like internal/external pressure, gas type, power application, current/voltage, and power consumption, which worsen with increased volume or area, and there is a need for a solution to generate plasma over a wide area safely and efficiently.
An antenna structure composed of multiple segments and capacitive elements, designed with specific radii of curvature and lengths, and a cooling water channel to manage heat and voltage distribution, reducing energy loss and preventing damage.
The antenna structure allows for stable plasma generation over a wide area with reduced voltage, energy loss, and heat management, enhancing plasma durability and safety, suitable for large-area displays and semiconductor processes.
Smart Images

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Abstract
Description
【Technical Field】 【0001】 The present invention relates to an antenna structure and a plasma generator using the same, and more specifically, to a device that generates an induced electric field and an induced magnetic field using an antenna structure including a plurality of antenna segments and a plurality of capacitive elements to induce the generation of plasma. 【Background Art】 【0002】 Technologies that utilize plasma are used not only in the technical fields of semiconductors, displays, and medical devices, but also in various industrial fields such as environmental technology fields such as air, water, and soil purification, and energy technology fields such as solar cells and hydrogen energy. 【0003】 There are a very large variety of methods for generating such plasma, such as DC discharges such as corona discharge, glow discharge, and arc discharge, AC discharges such as capacitive coupling discharge and inductive coupling discharge, shock waves, and high-energy beams. Among them, the inductive coupling method, which has a simple structure and high utilization, has been in the spotlight. 【0004】 On the other hand, conventional inductive coupling type plasma generators have problems such that plasma control becomes unstable or the durability of the device is impaired due to factors such as internal / external pressure, the type and properties of the supply gas, the power applied to the device, the current / voltage flowing through the components, and the power consumption. Furthermore, such problems become more serious as the volume, area, etc. of the plasma generator increase, and a solution to this is being sought. 【Summary of the Invention】 【Problems to be Solved by the Invention】 【0005】 One problem to be solved by the present invention is to provide an antenna structure composed of a plurality of segments and capacitive elements and a plasma generator using the same. 【0006】 One problem that the present invention aims to solve is to provide an antenna structure having a large volume or a large area for generating plasma over a wide area, and a plasma generating device using the same. 【0007】 One problem that the present invention aims to solve is to provide an antenna structure having a structure in which voltage is distributed in order to safely generate plasma with a high voltage formed in an inductor by a high driving frequency or a large input current, and a plasma generating device using the same. 【0008】 One problem that the present invention aims to solve is to provide a plasma generator that prevents damage to the plasma generator due to the heat generated by the plasma. 【0009】 One problem that this invention aims to solve is to provide a plasma generator that effectively absorbs the heat generated while plasma is being induced using cooling water. 【0010】 The problems that this invention aims to solve are not limited to those described above, and any problems not mentioned will be clearly understood by those skilled in the art to which this invention pertains from this specification and the accompanying drawings. [Means for solving the problem] 【0011】 According to one aspect of this specification, an antenna structure for inducing plasma into a chamber by applying an AC power supply comprises: first and second antenna segments arranged on a first plane intersecting a virtual central axis such that they have a first radius of curvature and a second radius of curvature with respect to the central axis; and a first capacitive load electrically connecting the first and second antenna segments in series, wherein when the first antenna segment has the first radius of curvature and extends by a first length from one end of the first capacitive load, the second antenna segment has the second radius of curvature and extends by a second length corresponding to the first length from the other end of the first capacitive load, and the sum of the first and second lengths is shorter than the circumference of a circle with the first or second radius of curvature as its radius. 【0012】 According to yet another aspect of this specification, a plasma generator for inducing plasma into a chamber by applying an AC power supply comprises a first antenna structure arranged to have a first radius of curvature with respect to a virtual central axis, the first antenna structure comprising a plurality of first antenna segments having the first radius of curvature, and at least one first capacitive load positioned between the plurality of first antenna segments such that the plurality of first antenna segments are electrically connected in series, the plurality of first antenna segments at least partially overlapping a virtual first plane perpendicular to the central axis, each of the plurality of first antenna segments having a first length, and the sum of the lengths of the plurality of first antenna segments is shorter than the circumference of a circle with the first radius of curvature. 【0013】 According to yet another aspect of this specification, an antenna structure disposed outside a plasma generating unit and providing an inductive electric field to guide plasma into the plasma generating unit comprises a first antenna formed along the outer wall surface of the plasma generating unit to induce an electric field, wherein a first cooling water channel for moving cooling water is formed inside the first antenna, the first antenna includes a first inner diameter surface parallel to the outer wall of the plasma generating unit and is in surface contact with the plasma generating unit via the first inner diameter surface, the first antenna includes a first surface parallel to the outer wall of the plasma generating unit and the first inner diameter surface that defines contact with the first cooling water channel, and the antenna structure provides an antenna structure that absorbs heat from the plasma generating unit via the inner diameter surface and the first surface in order to prevent the plasma generating unit from becoming hotter due to the plasma. 【0014】 The means of solving the problems of the present invention are not limited to those described above, and other means of solving the problems not mentioned will be clearly understood by those skilled in the art to which the present invention pertains from this specification and the accompanying drawings. [Effects of the Invention] 【0015】 According to the present invention, the plasma generator can reduce the maximum voltage applied to the antenna by capacitive elements within the antenna structure during operation. 【0016】 According to the present invention, the plasma generator can maintain the plasma for a longer period of time because a high electromotive force is induced by the antenna structure during operation. 【0017】 According to the present invention, the plasma generator can reduce the voltage applied to the antenna structure during operation, thereby reducing energy loss generated in the plasma. 【0018】 According to the present invention, large-area displays or multiple semiconductor processes can be executed by plasma induction over a wide area. 【0019】 According to the present invention, it is possible to reduce the power consumption generated in the antenna structure within the plasma generation device. 【0020】 According to the present invention, the potential difference between the antennas within the antenna structure decreases, and it is possible to generate a high-density plasma more safely. 【0021】 According to the present invention, even when the antenna structure is driven by a high-output high-frequency power source, damage to the chamber or the dielectric tube due to this can be prevented. 【0022】 According to the present invention, even when heat is generated by the plasma, heat damage to the plasma generation device can be prevented by the effective heat absorption function of the antenna structure. 【0023】 According to the present invention, while the antenna structure performs an effective cooling function, the influence of the parasitic capacitance can be reduced. 【0024】 According to the present invention, while the antenna structure performs an effective cooling function, it is possible to prevent the occurrence of arc discharge within the plasma generation device. 【0025】 The effects of the present invention are not limited to the above effects. Effects not mentioned will be clearly understood by those having ordinary knowledge in the technical field to which the present invention pertains from this specification and the accompanying drawings. 【Brief Description of the Drawings】 【0026】 [Figure 1] It is a diagram related to a plasma system according to an embodiment of this specification. [Figure 2] It is a diagram related to an implementation example of a plasma system according to an embodiment of this specification. [Figure 3] It is a diagram showing a plasma generation unit according to an embodiment of this specification. [Figure 4] It is a diagram related to an RF power source according to an embodiment of this specification. [Figure 5-6]This diagram shows a method for arranging antenna segments according to one embodiment of this specification. [Figure 7-10] This figure shows an antenna structure including an antenna segment and a capacitive element according to one embodiment of this specification. [Figure 11] This figure shows the equivalent circuit of an antenna structure according to one embodiment of this specification. [Figure 12] This figure shows a graph illustrating the voltage at different positions within an antenna structure according to one embodiment of this specification. [Figure 13] This figure shows a graph illustrating the voltage at different positions within an antenna structure containing a capacitive element according to one embodiment of this specification. [Figure 14] This figure relates to an antenna structure having a square cross-section according to one embodiment of this specification. [Figure 15] This is a diagram showing a cross-section of an antenna structure according to one embodiment of this specification. [Figure 16] This figure shows an antenna structure having a square cross-section and a circular cross-section according to one embodiment of this specification. [Figure 17-18] This figure shows a cross-section of an antenna structure having at least two or more cross-sectional shapes according to one embodiment of this specification. [Figure 19-22] This figure shows a method for connecting antennas having different cross-sections within an antenna structure according to one embodiment of this specification. [Figure 23] This figure shows a heat transfer member according to one embodiment of this specification. [Modes for carrying out the invention] 【0027】 According to one aspect of this specification, an antenna structure for inducing plasma into a chamber by applying an AC power supply comprises: first and second antenna segments arranged on a first plane intersecting a virtual central axis such that they have a first radius of curvature and a second radius of curvature with respect to the central axis; and a first capacitive load electrically connecting the first and second antenna segments in series, wherein when the first antenna segment has the first radius of curvature and extends by a first length from one end of the first capacitive load, the second antenna segment has the second radius of curvature and extends by a second length corresponding to the first length from the other end of the first capacitive load, and the sum of the first and second lengths is shorter than the circumference of a circle with the first or second radius of curvature as its radius. 【0028】 The above-mentioned objectives, features, and advantages of the present invention will become more apparent from the following detailed description with reference to the accompanying drawings. However, the present invention can be modified in various ways and has various embodiments, but specific embodiments will be illustrated in the drawings and described in detail below. 【0029】 The examples described herein are intended to clearly illustrate the spirit of the invention to those who have ordinary skill in the art to which the invention pertains, and the invention is not limited by the examples described herein. The scope of the invention should be construed to include modifications or variations that do not depart from the spirit of the invention. 【0030】 The drawings accompanying this specification are for illustrative purposes only, and the shapes shown in the drawings may be exaggerated as necessary to aid in understanding the invention; therefore, the invention is not limited by the drawings. 【0031】 Where a specific description of a known function or configuration related to the present invention is deemed to unnecessarily obscure the gist of the invention, such detailed description will be omitted. Furthermore, numbers used in the course of this description (e.g., 1st, 2nd, etc.) are merely identifiers to distinguish one component from another. 【0032】 Furthermore, the suffixes "unit," "module," and "part" used for the constituent elements in the following description are added or mixed solely for the sake of ease of specification preparation, and do not inherently have a distinct meaning or role from one another. 【0033】 According to one aspect of this specification, an antenna structure for inducing plasma into a chamber by applying an AC power supply comprises: first and second antenna segments arranged on a first plane intersecting a virtual central axis such that they have a first radius of curvature and a second radius of curvature with respect to the central axis; and a first capacitive load electrically connecting the first and second antenna segments in series, wherein when the first antenna segment has the first radius of curvature and extends by a first length from one end of the first capacitive load, the second antenna segment has the second radius of curvature and extends by a second length corresponding to the first length from the other end of the first capacitive load, and the sum of the first and second lengths is shorter than the circumference of a circle with the first or second radius of curvature as its radius. 【0034】 Here, the first and second radii of curvature are equal to each other, the first and second lengths are equal to each other, and the first antenna segment and the second antenna segment may have the same inductance. 【0035】 Furthermore, the antenna structure comprises a third antenna segment arranged on the first plane to have a third radius of curvature greater than the first radius of curvature, a fourth antenna segment arranged on the first plane to have a fourth radius of curvature greater than the second radius of curvature, and a second capacitive load electrically connecting the third and fourth antenna segments in series, wherein the third antenna segment may extend from one end of the second capacitive load by a third length longer than the first length, and the fourth antenna segment may extend from the other end of the second capacitive load by a fourth length longer than the second length. 【0036】 Furthermore, the straight line passing through the first and second capacitive loads may also pass through the central axis. 【0037】 Furthermore, the central angle of the sector formed by the arc of the first antenna segment may be equal to the central angle of the sector formed by the arc of the third antenna segment. 【0038】 Furthermore, the antenna structure may include an inter-turn capacitive load that electrically connects the second antenna segment and the third antenna segment in series. 【0039】 Furthermore, the first and second capacitive loads and the inter-turn capacitive load may have the same capacitance. 【0040】 Furthermore, the antenna structure comprises a fifth antenna segment having a first radius of curvature with respect to the central axis, a sixth antenna segment having a second radius of curvature, and a third capacitive load positioned between the fifth and sixth antenna segments and electrically connecting them in series, wherein the fifth and sixth antenna segments are positioned in a second plane intersecting the central axis, and the first and second planes may be different planes from each other. 【0041】 Furthermore, the second antenna segment and the fifth antenna segment may be electrically connected in series with a first interlayer capacitive load. 【0042】 Furthermore, the antenna structure comprises a seventh antenna segment having a first radius of curvature with respect to the central axis, an eighth antenna segment having a second radius of curvature, a fourth capacitive load positioned between the seventh and eighth antenna segments to electrically connect them in series, and a second interlayer capacitive load electrically connecting the sixth and seventh antenna segments in series. The seventh and eighth antenna segments are positioned in a third plane that intersects the central axis and is different from the first and second planes, and the first and second interlayer capacitive loads may have a predetermined angle with respect to the central axis. 【0043】 Furthermore, the first antenna segment may extend from one end to the other, with the other end of the first antenna segment electrically connected to one end of the first capacitive load, and the second antenna segment may extend from one end to the other, with one end of the second antenna segment electrically connected to the other end of the first capacitive load. 【0044】 Furthermore, when the AC power supply is applied to the antenna structure, the maximum voltage at the other end of the first antenna segment relative to the reference node can correspond to the maximum voltage at the other end of the second antenna segment relative to the reference node. 【0045】 Furthermore, when the AC power supply is applied to the antenna structure, the voltage at the other end of the second antenna segment relative to one end of the second antenna segment can correspond to the voltage at the other end of the first antenna segment relative to one end of the first antenna segment. 【0046】 Furthermore, when the AC power supply is applied to the antenna structure, the magnitude of the maximum voltage at the other end of the first antenna segment relative to the reference node can correspond to the magnitude of the maximum voltage at one end of the second antenna segment relative to the reference node. 【0047】 Furthermore, at any point after the AC power supply has been applied to the antenna structure, the voltage at the other end of the first antenna segment relative to the reference node and the voltage at the one end of the second antenna segment relative to the reference node may have opposite signs. 【0048】 Furthermore, the antenna structure includes a first point located between one end and the other end of the first antenna segment, and a second point located between one end and the other end of the second antenna segment, and when the AC power supply is applied to the antenna structure, the maximum voltage at the first point relative to the reference node can correspond to the maximum voltage at the second point relative to the reference node. 【0049】 Furthermore, at any point after the AC power supply has been applied to the antenna structure, the voltage at the other end of the first antenna segment relative to the reference node and the voltage at the other end of the second antenna segment relative to the reference node can correspond to each other. 【0050】 Furthermore, the antenna structure may be configured as at least one of a flat plate shape that guides plasma to the upper or lower part and a tubular shape that guides plasma to the center. 【0051】 According to yet another aspect of this specification, a plasma generator for inducing plasma into a chamber by applying an AC power supply comprises a first antenna structure arranged to have a first radius of curvature with respect to a virtual central axis, the first antenna structure comprising a plurality of first antenna segments having the first radius of curvature, and at least one first capacitive load positioned between the plurality of first antenna segments such that the plurality of first antenna segments are electrically connected in series, the plurality of first antenna segments at least partially overlapping a virtual first plane perpendicular to the central axis, each of the plurality of first antenna segments having a first length, and the sum of the lengths of the plurality of first antenna segments is shorter than the circumference of a circle with the first radius of curvature. 【0052】 Here, the plasma generator includes a second antenna structure arranged in the first plane such that it has a second radius of curvature greater than the first radius of curvature with respect to the central axis, the second antenna structure includes a plurality of second antenna segments having the second radius of curvature, and at least one second capacitive load arranged between the plurality of second antenna segments such that the plurality of second antenna segments are electrically connected in series, each of the plurality of second antenna segments having a first length, and the sum of the lengths of the plurality of second antenna segments may be shorter than the circumference of a circle with the second radius of curvature as its radius. 【0053】 On the other hand, the first to eighth antenna segments described above can be interpreted as referring to any of the antenna segments within the antenna structure, regardless of their order. For example, the first and second antenna segments can mean antenna segments arranged in the same plane. 【0054】 Furthermore, the series connections described above can include not only cases where elements are directly connected to each other, but also cases where elements are indirectly connected by including other elements between them. 【0055】 According to yet another aspect of this specification, an antenna structure disposed outside a plasma generating unit and providing an inductive electric field to guide plasma into the plasma generating unit comprises a first antenna formed along the outer wall surface of the plasma generating unit to induce an electric field, wherein a first cooling water channel for moving cooling water is formed inside the first antenna, the first antenna includes a first inner diameter surface parallel to the outer wall of the plasma generating unit and is in surface contact with the plasma generating unit via the first inner diameter surface, the first antenna includes a first surface parallel to the outer wall of the plasma generating unit and the first inner diameter surface that defines contact with the first cooling water channel, and the antenna structure provides an antenna structure that absorbs heat from the plasma generating unit via the inner diameter surface and the first surface in order to prevent the plasma generating unit from becoming hotter due to the plasma. 【0056】 Here, the first turn antenna includes a first outer diameter surface connected to the first inner diameter surface, and the first outer diameter surface may be bent in a direction away from the plasma generating section along the longitudinal direction. 【0057】 Furthermore, the present invention includes a second antenna electrically connected to the first antenna and positioned to enclose the first antenna, and a third antenna electrically connected to the second antenna and positioned to enclose the second antenna, wherein the second and third antennas are positioned such that the distance between the first and second antennas is greater than the distance between the second and third antennas. 【0058】 Furthermore, the present invention provides a second antenna that is electrically connected to the first antenna, positioned to enclose the first antenna, and comprising at least a second inner diameter surface and a second outer diameter surface, wherein the second inner diameter surface is positioned closer to the plasma generating section than the second outer diameter surface, and the second inner diameter surface of the second antenna does not necessarily have to be parallel to the first inner diameter surface of the first antenna. 【0059】 Furthermore, the present invention provides a second antenna that is electrically connected to the first antenna, is arranged on the same plane as the first antenna so as to enclose the first antenna, and consists of at least a second inner diameter surface and a second outer diameter surface, wherein the second inner diameter surface is positioned closer to the plasma generating portion than the second outer diameter surface, and the distance between the second inner diameter surface and the first outer diameter surface may increase as it moves away from the plane in the longitudinal direction of the plasma generating portion. 【0060】 Furthermore, the present invention includes a second antenna that is electrically connected to the first antenna and is positioned to enclose the first antenna, and the cross-section of the second antenna may differ from that of the first antenna. 【0061】 Furthermore, the present invention may also include a second antenna electrically connected to the first antenna and positioned to enclose the first antenna, and a connecting portion connecting the first antenna and the second antenna, wherein the first antenna and the second antenna have different cross-sections, the cross-section at one end of the connecting portion corresponds to the cross-section of the first antenna, and the cross-section at the other end of the connecting portion corresponds to the cross-section of the second antenna. 【0062】 Furthermore, the connection portion may include at least a portion of the end of the first antenna and at least a portion of the bulging end of the second antenna. 【0063】 Furthermore, the connection portion may include a capacitive element. 【0064】 Furthermore, the device may include a clamping portion coupled to the first antenna and providing a clamping force to the first antenna. 【0065】 According to yet another embodiment of this specification, a plasma generator can be provided comprising a plasma generating section including an internal space into which plasma is induced, and an antenna structure disposed outside the plasma generating section and providing an inductive electric field to induce plasma into the internal space of the plasma generating section, wherein the antenna structure includes a first antenna formed along the outer wall surface of the plasma generating section to induce an electric field, a first cooling water channel for moving cooling water is formed inside the first antenna, the first antenna includes a first inner diameter surface parallel to the outer wall of the plasma generating section and is in surface contact with the plasma generating section via the first inner diameter surface, the first antenna includes a first surface that defines the first cooling water channel and is parallel to the outer wall and the first inner diameter surface of the plasma generating section, and the antenna structure absorbs heat from the plasma generating section via the inner diameter surface and the first surface to prevent the plasma generating section from becoming hotter due to the plasma. 【0066】 Here, the thickness of the plasma generating section may be between 0.5 mm and 30 mm. 【0067】 Furthermore, the diameter of the plasma generation section may be between 10 mm and 300 mm. 【0068】 Furthermore, the plasma generator may further include a heat transfer member that thermally couples with the plasma generating unit and the antenna structure, respectively, wherein the plasma generating unit and the antenna structure are spaced apart, and the heat transfer member is positioned between the plasma generating unit and the antenna structure. 【0069】 Furthermore, at least a portion of the plasma generating section may be made of at least one material from among aluminum oxide, silicon nitride, silicon nitride, silicon dioxide, yttrium oxide, ceramic, silicon carbide, or a combination thereof. 【0070】 Furthermore, the inner surface defining the internal space in the plasma generation section may be made of silica carbide material. 【0071】 This specification relates to an antenna structure and a plasma generating device using the same. 【0072】 Here, plasma is a state (phase) in which matter is separated into negatively charged electrons and positively charged ions by the application of high energy, and can be induced or generated by various methods. In particular, inductively coupled plasma (ICP) is a plasma generated when power is supplied to a coil or antenna, etc., to form an induced electric field or stored electric field in a specific space, and can generally be driven by a high-frequency power supply such as radio frequency (RF). On the other hand, for the sake of explanation, the following explanation will assume that the plasma generated by the plasma generator is inductively coupled plasma, or the technical ideas of this specification are not limited to this. 【0073】 Here, an antenna is an inductive element or load that forms an electric or magnetic field around it when a voltage or current is applied, and can refer to a coil or inductor, or it can refer to an equivalent circuit realized with elements other than inductive elements. 【0074】 Here, an antenna structure can mean a structure that includes at least one antenna. Furthermore, the antenna structure can include at least one capacitive element or load, and can be realized in a form in which at least one antenna or capacitive element is connected or arranged in a particular manner. 【0075】 On the other hand, the plasma generator according to one embodiment of this specification can be widely used in various fields such as semiconductors, display processing, environment, and energy. The plasma generator described below is not limited to use in a specific field, but is clearly applicable in any field where plasma is utilized. 【0076】 In the following description, an inductively coupled plasma system (ICP system) 10 according to one embodiment of this specification will be explained with reference to Figures 1 and 2. 【0077】 Figure 1 is a diagram relating to a plasma system 10 according to one embodiment of this specification. The plasma system 10 can induce the generation of inductively coupled plasma in the plasma generation section by supplying RF power to the antenna structure using an RF power supply. 【0078】 Referring to Figure 1, the plasma system 10 may include a plasma generator 100, which includes an antenna structure 1000 and a plasma generating unit 2000, and an RF power supply 200. 【0079】 The plasma generator 100 can generate plasma by receiving RF power from the RF power supply 200. Specifically, when RF power is supplied to the antenna structure 1000, a time-varying current flows through it, and based on this, an induced electric field is generated in the plasma generation unit 2000, thereby inducing plasma. 【0080】 The antenna structure 1000 can be electrically connected to the RF power supply 200. For example, the antenna structure 1000 may be connected in series or parallel to the RF power supply 200 by a wire, or in series or parallel via an electrical element. 【0081】 The antenna structure 1000 can be physically or electrically connected to the plasma generating unit 2000. Specific details regarding the connection relationship between the antenna structure 1000 and the plasma generating unit 2000 will be described later. 【0082】 The plasma generation unit 2000 may include a region where plasma generation is induced. For example, the plasma generation unit 2000 may mean a space such as a chamber or tube where plasma can be generated and maintained. 【0083】 Figure 2 is a diagram illustrating an example of the realization of a plasma system 10 according to one embodiment of this specification. 【0084】 Referring to Figure 2, the plasma system 10 can be implemented in various ways depending on the method of plasma utilization. Specifically, the positional relationship between the RF power supply 200, the antenna structure 1000, and the plasma generation unit 2000 can be set according to the method of plasma utilization. 【0085】 Referring to Figure 2a, the plasma system 10 can generate plasma above or below the antenna structure 1000. For example, the antenna structure 1000 may be configured as a flat plate and positioned at the upper end of the plasma generation unit 2000, and the plasma generation unit 2000 can perform a semiconductor or display process using the process gas supplied to a chamber containing a process target such as a semiconductor wafer, silicon substrate, or display, and the plasma generated and flowing into the plasma generation unit 2000. As another example, the antenna structure 1000 may also be configured as a flat plate and positioned at the lower end of the plasma generation unit 2000, and the plasma generation unit 2000 can perform a semiconductor or display process using the process gas supplied to a chamber containing a process target such as a semiconductor wafer, silicon substrate, or display, and the plasma generated and flowing into the plasma generation unit 2000. 【0086】 Referring to Figure 2b, the plasma system 10 can generate plasma in the center of the antenna structure 1000. For example, the antenna structure 1000 is provided in a tubular shape that surrounds or wraps around the plasma generation unit 2000, and the plasma generation unit 2000 is provided in a dielectric tube, and can generate radical species using the process gas and plasma supplied to the plasma generation unit 2000, which can then be supplied to a separate process chamber. 【0087】 On the other hand, the shape of the antenna structure 1000 is not limited to a flat plate or a tube shape as shown in Figure 2, and it goes without saying that the antenna structure 1000 may be configured as a tube shape in Figure 2a and as a flat plate shape in Figure 2b. 【0088】 Below, with reference to Figure 3, we will specifically describe the plasma generation unit 2000 available in the plasma system 10. 【0089】 Figure 3 shows a plasma generation unit 2000 according to one embodiment of this specification. 【0090】 The plasma generation unit 2000 can be configured in various shapes. For example, referring to Figure 3, the plasma generation unit 2000 can be configured in a shape that includes an internal space into which plasma is induced. Specifically, the plasma generation unit 2000 can have shapes such as a hollow cylindrical, ring-shaped, or tubular shape. 【0091】 The plasma generation unit 2000 can have a specific thickness t. For example, referring to Figure 3, if the plasma generation unit 2000 is configured in a tubular shape, the thickness t of the plasma generation unit 2000 can be determined to be between 0.5 mm and 30 mm. Here, if the thickness t of the plasma generation unit 2000 is less than 0.5 mm, by-products are likely to be generated inside the plasma generation unit 2000 by the antenna structure 1000, which may weaken its physical durability. Furthermore, if the thickness t of the plasma generation unit 2000 exceeds 30 mm, the inductive coupling between the antenna structure 1000 positioned around the plasma generation unit 2000 and the plasma induced inside the plasma generation unit 2000 weakens, making it difficult to induce or maintain the plasma, which may reduce the cooling efficiency of the plasma generation unit 2000 by the antenna structure 1000, as described later. Therefore, the thickness t of the plasma generation unit 2000 described above can have critical significance in that, when the antenna structure 1000 is electrically coupled to the plasma generation unit 2000 as described later, it can stably induce and maintain plasma inside the plasma generation unit 2000, thereby improving the durability of the plasma generation unit 2000. 【0092】 The plasma generation unit 2000 can have a specific diameter d. For example, referring to Figure 3, if the plasma generation unit 2000 has a tubular shape, the diameter d can be determined to be within the range of 10 mm to 300 mm. Here, the diameter d can mean the diameter of the inner surface of the plasma generation unit 2000, the diameter of the outer surface, or the average diameter of the inner and outer surfaces. If the diameter d of the plasma generation unit 2000 is less than 10 mm, the morphology of the plasma induced inside the plasma generation unit 2000 will be relatively large in terms of surface area compared to volume, which may result in energy loss. Also, if the diameter d of the plasma generation unit 2000 exceeds 300 mm, the induction power density required for plasma induction becomes very low, which may make it difficult to fabricate the antenna structure 1000 or the RF power supply 200. Therefore, the range of the diameter d of the plasma generation unit 2000 described above can have critical significance in that it makes it easier to fabricate the RF power supply 200 and the antenna structure 1000 of the plasma system 10 and improves plasma induction efficiency by preventing plasma energy loss. 【0093】 The above has mainly described the case where the shape of the plasma generation unit 2000 is a hollow cylindrical or tubular shape. However, the technical concept of this specification is not limited to these cases. For example, the plasma generation unit 2000 may have a polygonal shape that includes an internal space in which plasma can be induced, and it goes without saying that the above-described provisions regarding thickness t and diameter d can also be applied in this case. 【0094】 The plasma generation unit 2000 can be made from various materials. For example, the plasma generation unit 2000 can be made from a non-conductive material. As another example, the plasma generation unit 2000 can be made from a material with high thermal conductivity. Specifically, the plasma generation unit 2000 can be made from aluminum nitride (AlN), aluminum oxide (Al2O3), silicon nitride (SiN), silicon nitride (Si3N4), silicon dioxide (SiO2), yttrium oxide (Y2O3), or silicon carbide (SiC). 【0095】 Furthermore, the plasma generation unit 2000 can be made of a material that does not react with the gas (e.g., NF3, Ar, CO2, CH4, NF3, O2, H2, etc.) flowing into the plasma generation unit 2000 to induce the plasma and generate impurities (particles). For example, the plasma generation unit 2000 can be made of silicon carbide (SiC). 【0096】 Below, we will explain the RF power supply in detail with reference to Figure 4. 【0097】 Figure 4 is a diagram relating to an RF power supply 200 according to one embodiment of this specification. 【0098】 Referring to Figure 4, the RF power supply 200 may include an AC power supply 210, a rectifier 220, an inverter 230, a controller 240, and a sensor module 250. The RF power supply 200 can convert a first AC power supply provided by the AC power supply 210 into a second AC power supply and supply it to a load. For example, the RF power supply 200 can convert a first AC power supply, which is commonly used in homes or industries, into a second AC power supply having a frequency of several hundred kHz to tens of MHz and a power of several kW or more, and supply it to an antenna structure 1000. 【0099】 Here, the load may include the antenna structure 1000 and the plasma generated by the antenna structure 1000. 【0100】 The rectifier 220 can convert the output of the AC power supply 210 into a DC power supply. For example, the rectifier 220 can convert the first AC power supply supplied from the AC power supply 210 into a DC power supply and apply it to both ends of the inverter 230. 【0101】 The inverter 230 receives DC power from the rectifier 220 and can supply a second AC power to the load. In this case, the inverter 230 can provide the second AC power to the load using a switching signal received from the controller 240. Here, the inverter 230 may include at least one switching element controlled by the switching signal, and the second AC power supplied from the inverter 230 to the load may have a drive frequency set by the inverter 230 based on the switching signal provided by the controller 240. For this purpose, the inverter 230 may be provided as a half-bridge or full-bridge type controlled by pulse width modulation (PWM). 【0102】 On the other hand, a capacitive element may be placed between the rectifier 220 and the inverter 230. For example, the RF power supply 200 includes a capacitor connected in parallel with the rectifier 220 and the inverter 230, the capacitor being able to discharge the AC component of the power supply applied to the inverter 230 to the ground node (GND). 【0103】 The controller 240 can receive sensing data from the sensor module 250 and generate a switching signal. For example, the controller 240 may include an FPGA and acquire data related to the resonant frequency of the load from the sensor module 250 to generate a switching signal. 【0104】 The sensor module 250 can cause the controller 240 to acquire data regarding the resonant frequency of the load or data regarding the power supplied to the load. To this end, the sensor module 250 can sense the magnitude and phase of the current flowing through the load or inverter 230, the magnitude and phase of the applied voltage, the relative potential, or the magnitude of the power. 【0105】 As described above, the RF power supply 200 can control the drive frequency of the second AC power supply provided to the load based on data regarding the load's resonant frequency. In other words, the RF power supply 200 can track the load's resonant frequency, which changes in response to plasma generation, and set the drive frequency of the second AC power supply to be similar to the load's resonant frequency. This prevents unnecessary power consumption and improves the durability of the plasma system. 【0106】 The configuration and arrangement of the antenna structure 1000 will be described below with reference to Figures 5 and 6. 【0107】 Figures 5 and 6 illustrate a method for arranging an antenna segment according to one embodiment of this specification. 【0108】 Referring to Figure 5, the antenna structure 1000 can include multiple antenna segments. The antenna structure 1000 can be composed of multiple antenna segments depending on the plasma intensity, density, or generation range required in the plasma utilization field. For example, the antenna structure 1000 can be placed over a wide area to provide plasma over a wide range, and in that case, it may be divided into multiple antenna segments to prevent the length of the antenna structure 1000 from becoming excessively long and the potential at the antenna structure 1000 from increasing. 【0109】 For the sake of explanation, the following description assumes that the antenna segment includes the first to fourth antenna segments 1110, 1120, 1130, and 1140. However, the antenna structure 1000 can contain m (where m is a natural number) antenna segments, and the following description can be applied in common to each case. 【0110】 Antenna segments may be provided as part of an antenna, induction coil, or inductor, copper wire, etc. The physical properties of the antenna segment, such as cross-sectional shape, cross-sectional area, thickness, and diameter, may be determined based on the electrical properties required for the antenna structure 1000 or the antenna segment, such as inductance, mutual inductance, parasitic inductance, capacitance, parasitic capacitance, resistance, or parasitic resistance. 【0111】 Furthermore, for the sake of explanation, the antenna segment will be assumed to be arc-shaped below, but the technical concept of this specification is not limited to this. The antenna segment can have specific geometric shapes other than arcs, such as straight lines, curves, broken lines, broken curves, circles or polygons, donuts, solenoids, etc., and is generally composed of three-dimensional solid shapes, but it goes without saying that it may also be composed of two-dimensional shapes such as thin films or plating. 【0112】 The antenna segments can be positioned on the first plane P1, having a fixed distance from the central axis CA. Specifically, the antenna segments may be positioned on the first plane P1 and spaced apart from the central axis CA by a predetermined distance. 【0113】 Here, the central axis CA can represent a virtual axis. For example, the central axis CA can be understood as a virtual straight line passing through the center of the plasma generated in the plasma system 10. 【0114】 Here, the first plane P1 can mean a virtual plane on which the antenna segments are arranged. For example, the first plane P1 can mean a virtual plane perpendicular to the central axis CA. In yet another example, the first plane P1 can mean a virtual plane intersecting the central axis CA. On the other hand, all of the antenna segments may be arranged on the first plane P1, or at least some may be arranged on the first plane P1 and other parts on a plane different from the first plane P1. 【0115】 Antenna segments can have a specific curvature or radius of curvature. For example, the first to fourth antenna segments 1110, 1120, 1130, and 1140 may be arranged in an arc with a first radius of curvature RC1. In yet another example, the first to fourth antenna segments 1110, 1120, 1130, and 1140 may have corresponding curvatures or radii of curvature to each other. In yet another example, the first to fourth antenna segments 1110, 1120, 1130, and 1140 may have different curvatures or radii of curvature. 【0116】 Here, the radius of curvature or curvature may be set based on the size of the antenna structure 1000. For example, the larger the size or volume of the antenna structure 1000, the larger the radius of curvature and the smaller the curvature. 【0117】 Antenna segments can extend to specific lengths. For example, the first to fourth antenna segments 1110, 1120, 1130, and 1140 may extend to corresponding lengths or be arranged to extend to different lengths. Specifically, the first to fourth antenna segments 1110, 1120, 1130, and 1140 may have the same first length or different lengths. 【0118】 The total length of the antenna segments may be set to a value less than or equal to a predetermined value. For example, if the first to fourth antenna segments 1110, 1120, 1130, and 1140 are arranged in the first plane P1 with a first radius of curvature RC1 relative to the central axis CA and extending by a first length, the sum of the lengths of the first to fourth antenna segments 1110, 1120, 1130, and 1140 may be less than the circumference of a circle with a radius of the first radius of curvature RC1. In yet another example, if the first to fourth antenna segments 1110, 1120, 1130, and 1140 are arranged such that at least a portion of them has a first radius of curvature RC1 and extends by a first length with respect to the central axis CA in the first plane P1, and the other portion has a second radius of curvature RC2 and extends by a second length, then the sum of the lengths of each of the first to fourth antenna segments 1110, 1120, 1130, and 1140 may be less than the circumference of a circle with a radius of either the first radius of curvature RC1 or the second radius of curvature RC2. In this case, the first to fourth antenna segments 1110, 1120, 1130, and 1140 can be arranged so as not to physically touch each other. 【0119】 On the other hand, electrical elements can be placed between antenna segments. For example, capacitive elements can be placed between antenna segments to electrically connect them. The arrangement of electrical elements will be explained in detail later. 【0120】 The antenna segments included in the antenna structure 1000 can be arranged in multiple turns. Referring to Figure 6, the antenna segments can be arranged in two turns on the first plane P1 with respect to the central axis CA. Specifically, the first turn includes the first to fourth antenna segments 1110, 1120, 1130, and 1140, and the second turn includes the fifth to eighth antenna segments 1210, 1220, 1230, and 1240. Here, the antenna segments of the first turn have a first radius of curvature RC1, and the antenna segments of the second turn may have a second radius of curvature RC2 which is larger than the first radius of curvature RC1. 【0121】 Each antenna segment of the second turn may be arranged to correspond to each antenna segment of the first turn. For example, if the first to fourth antenna segments 1110, 1120, 1130, and 1140 are arranged in the first to fourth quadrants of the first plane P1, respectively, then the fifth to eighth antenna segments 1210, 1220, 1230, and 1240 can be arranged in the first to fourth quadrants of the first plane P1, respectively. 【0122】 Here, the first antenna segment 1110 can be adjacent to the second antenna segment 1120 and the fourth antenna segment 1140 in the arc direction, and adjacent to the fifth antenna segment 1210 in a direction perpendicular to the central axis CA. The second antenna segment 1120 can be adjacent to the first antenna segment 1110 and the third antenna segment 1130 in the arc direction, and adjacent to the sixth antenna segment 1220 in a direction perpendicular to the central axis CA. The third antenna segment 1130 can be adjacent to the second antenna segment 1120 and the fourth antenna segment 1140 in the arc direction, and adjacent to the seventh antenna segment 1230 in a direction perpendicular to the central axis CA. The fourth antenna segment 1140 can be adjacent to the first antenna segment 1110 and the third antenna segment 1130 in the arc direction, and adjacent to the eighth antenna segment 1240 in a direction perpendicular to the central axis CA. 【0123】 The second turn antenna segment can extend to a longer length than the first turn antenna segment. For example, if the first antenna segment 1110 is positioned to extend to a first length, the fifth antenna segment 1210 can extend to a second length which is longer than the first length. Here, the ratio of the second length to the first length may correspond to the ratio of the second radius of curvature RC2 of the fifth antenna segment 1110 to the first radius of curvature RC1 of the first antenna segment 1110. Also, the central angle that the first antenna segment 1110 extending to the corresponding first length makes with the central axis CA may correspond to the central angle that the fifth antenna segment 1210 extending to the second length makes with the central axis CA. Alternatively, the central angle of the sector formed by the arc of the first antenna segment 1110 extending to the first length may correspond to the magnitude of the central angle of the sector formed by the arc of the fifth antenna segment 1210 extending to the second length. Alternatively, the extension line connecting one end of the first antenna segment 1110 and one end of the fifth antenna segment 1210 can coincide with the central axis CA. 【0124】 Here, the central angle may be set according to the number of antenna segments placed per turn. For example, if there are x antenna segments placed per turn (where x is a natural number), the central angle that each antenna segment makes with the central axis CA may be less than or equal to approximately 360 / x°. Specifically, referring again to Figure 5, the antenna segments include the first antenna segment 1110 to the fourth antenna segment 1140, in which case the central angle that each antenna segment makes with the central axis CA may be less than or equal to approximately 90°. 【0125】 The distance between the first and second turns may be set based on the electrical properties of the antenna structure 1000. For example, the distance between the first and second turns may be set based on the parasitic capacitance that may occur between the antenna segments. For instance, the distance between the first and second turns may be set to a distance that minimizes the effect of parasitic capacitance between the first antenna segment 1110 and the fifth antenna segment 1210 when power is applied to the antenna structure 1000. In yet another example, the distance between the first and second turns may be set considering the overall volume of the antenna structure 1000. For example, in order to reduce the width of the antenna structure 1000 within manufacturing tolerances, the distance between the first and second turns may be set to approximately 1 mm or within the range of 0.5 mm to 3.5 mm. In this case, the distance between the first and second turns may be set to a distance that does not cause arcing between turns when the plasma system 10 is driven at a specific drive frequency. In yet another example, the distance between the first turn and the second turn may be set taking into account the expandability of the plasma generating unit 2000. Needless to say, the method for setting the distance between the first turn and the second turn described above can also be used to set the distance between turns within the antenna structure 1000, such as the distance between the second turn and the third turn. 【0126】 The inductance of the second turn antenna segment may be set based on the inductance of the first turn antenna segment. For example, the inductance of the fifth antenna segment 1210 can correspond to the inductance of the first antenna segment 1110. In yet another example, the inductance of the fifth antenna segment 1210 may be set to be greater than the inductance of the first antenna segment 1110. 【0127】 On the other hand, the first turn and second turn antenna segments may be arranged in different planes. For example, the first turn antenna segment may be arranged in the first plane P1, and the second turn antenna segment may be arranged in a plane parallel to the first plane P1 or in a plane that makes a predetermined angle with the first plane P1. 【0128】 Furthermore, the first turn and the second turn may contain the same number of antenna segments or different numbers of antenna segments. For example, the first turn may contain four first to fourth antenna segments 1110, 1120, 1130, and 1140, while the second turn may contain only the fifth antenna segment 1210 and the seventh antenna segment 1230, which are arranged symmetrically with respect to the central axis CP. 【0129】 For the sake of explanation, the above description is based on the assumption that the antenna structure 1000 is composed of two turns. However, the technical concept of this specification is not limited to this. The antenna structure 1000 can be composed of n turns (where n is a natural number), and furthermore, the antenna structure 1000 can contain n turns, each containing m antenna segments. Thus, in the case of an antenna structure 1000 with multiple segments and multiple turns, the antenna segment arrangement method described above can be applied similarly. For example, if the antenna structure 1000 is composed of three turns containing six antenna segments, the first turn contains six antenna segments having a first radius of curvature RC1 and a first length, the second turn contains six antenna segments having a second radius of curvature RC2 and a second length, and the third turn contains six antenna segments having a third radius of curvature and a third length. The sum of the lengths of the antenna segments in each turn may be shorter than the circumference of a circle whose radius is the radius of curvature of the antenna segments in each turn. 【0130】 The following describes the method of connecting antenna segments in the antenna structure 1000 with reference to Figures 7 to 10. 【0131】 Figures 7 to 10 are diagrams relating to an antenna structure 1000 including an antenna segment and capacitive elements according to one embodiment of this specification. 【0132】 Referring to Figure 7, the antenna structure 1000 is configured in a flat plate shape and may include antenna segments, a first main capacitive element 1500, a second main capacitive element 1600, and auxiliary capacitive elements. The antenna structure 1000 can electrically or physically connect multiple antenna segments by including auxiliary capacitive elements and can be connected to the RF power supply 200 via the first main capacitive element 1500 and the second main capacitive element 1600. 【0133】 Here, the auxiliary capacitive elements may include first to sixth auxiliary capacitive elements 1711, 1712, 1713, 1721, 1722, and 1723 that electrically or physically connect antenna segments within a turn, and a first inter-turn capacitive element 1731 that electrically or physically connects different turns. 【0134】 Here, the main capacitive elements 1500, 1600 and the auxiliary capacitive elements are elements that can be represented as a capacitor or an equivalent circuit of a capacitor, and can mean elements having a predetermined capacitance or capacitive reactance. For example, the main capacitive elements 1500, 1600 and the auxiliary capacitive elements may include ceramic capacitors with good high-frequency characteristics, or multi-layer ceramic capacitors (MLCCs) or capacitor arrays in which multiple capacitors are connected in series and / or parallel. 【0135】 Auxiliary capacitive elements can electrically or physically connect multiple antenna segments. For example, referring again to Figure 7, one end of the first auxiliary capacitive element 1711 may be connected to one end of the first antenna segment 1110, and the other end of the first auxiliary capacitive element 1711 may be connected to one end of the second antenna segment 1120. The first antenna segment 1110 may extend from one end of the first auxiliary capacitive element 1711 by a first length with a first radius of curvature RC1, and the second antenna segment 1120 may extend from the other end of the first auxiliary capacitive element 1711 by a first length with a first radius of curvature RC1. 【0136】 In another example, the first antenna segment 1110 may extend from one end of the first auxiliary capacitive element 1711 by a first length with a first radius of curvature RC1, and the second antenna segment 1120 may extend from the other end of the first auxiliary capacitive element 1711 by a first length with a second radius of curvature RC2. In this case, the first radius of curvature RC1 and the second radius of curvature RC2 may be the same or different. 【0137】 In yet another example, the first antenna segment 1110 may extend from one end of the first auxiliary capacitive element 1711 by a first length with a first radius of curvature RC1, and the second antenna segment 1120 may extend from the other end of the first auxiliary capacitive element 1711 by a second length with a first radius of curvature RC1. In this case, the first length and the second length may be the same or different. 【0138】 Auxiliary capacitive elements can be placed between antenna segments. For example, referring again to Figure 7, the first to third auxiliary capacitive elements 1711, 1712, and 1713 may be placed between the first to fourth antenna segments 1110, 1120, 1130, and 1140 in the first turn of the antenna structure 1000. The first auxiliary capacitive element 1711 can be placed between the first antenna segment 1110 and the second antenna segment 1120. The second auxiliary capacitive element 1712 can be placed between the second antenna segment 1120 and the third antenna segment 1130. The third auxiliary capacitive element 1713 can be placed between the third antenna segment 1130 and the fourth antenna segment 1140. The fourth to sixth auxiliary capacitive elements 1721, 1722, and 1723 may be placed between the fifth to eighth antenna segments 1210, 1220, 1230, and 1240 in the second turn of the antenna structure 1000. The fourth auxiliary capacitive element 1721 can be placed between the fifth antenna segment 1210 and the sixth antenna segment 1220. The fifth auxiliary capacitive element 1722 can be placed between the sixth antenna segment 1220 and the seventh antenna segment 1230. The sixth auxiliary capacitive element 1723 can be placed between the seventh antenna segment 1230 and the eighth antenna segment 1240. 【0139】 Here, the first auxiliary capacitive element 1711 may be positioned adjacent to the second auxiliary capacitive element 1712 in the arc direction and adjacent to the fourth auxiliary capacitive element 1721 in a direction perpendicular to the central axis CA. The second auxiliary capacitive element 1712 may be positioned adjacent to the first auxiliary capacitive element 1711 and the third auxiliary capacitive element 1713 in the arc direction and adjacent to the fifth auxiliary capacitive element 1722 in a direction perpendicular to the central axis CA. The third auxiliary capacitive element 1713 may be positioned adjacent to the second auxiliary capacitive element 1712 in the arc direction and adjacent to the sixth auxiliary capacitive element 1723 in a direction perpendicular to the central axis CA. 【0140】 The auxiliary capacitive elements can be positioned to have a specific positional relationship with the antenna segments. For example, the first auxiliary capacitive element 1711 can be positioned so as to pass through a virtual line connecting the other end of the first antenna segment 1110 and one end of the second antenna segment 1120. In yet another example, the first auxiliary capacitive element 1711 is connected to the first antenna segment 1110 and the second antenna segment 1120 via electrical connecting members such as conductors, but can be positioned further away from the central axis CA compared to the antenna segments to which it is connected. In yet another example, the first auxiliary capacitive element 1711 can be positioned between the first turn and the second turn. Specifically, the first auxiliary capacitive element 1711 may be positioned at a distance from the central axis CA greater than the first radius of curvature RC1 and less than the second radius of curvature RC2. 【0141】 Alternatively, the auxiliary capacitive elements may be arranged in a plane different from the plane on which the antenna segments are arranged. For example, at least one of the first to sixth auxiliary capacitive elements 1711, 1712, 1713, 1721, 1722, and 1723 may be arranged at a predetermined distance from the first plane P1. Here, the predetermined distance can take into account the volume or size of the auxiliary capacitive elements, etc. 【0142】 Auxiliary capacitive elements can be arranged such that they have a predetermined positional relationship with one another between antenna segments. For example, referring again to Figure 7, at least two of the first to sixth auxiliary capacitive elements 1711, 1712, 1713, 1721, 1722, and 1723 may be arranged symmetrically with respect to the central axis CA. Specifically, the first auxiliary capacitive element 1711 and the third auxiliary capacitive element 1713 can be arranged symmetrically with respect to the central axis CA. In yet another example, the auxiliary capacitive elements of the first turn and the auxiliary capacitive elements of the second turn may be arranged in corresponding positions. Specifically, the extension line connecting the first auxiliary capacitive element 1711 and the fourth auxiliary capacitive element 1721 can coincide with the central axis CA. Alternatively, the extension line connecting the first auxiliary capacitive element 1711 and the fourth auxiliary capacitive element 1721 can pass through the third auxiliary capacitive element 1713 and the sixth auxiliary capacitive element 1723. Alternatively, the extension line connecting the first auxiliary capacitive element 1711 and the fourth auxiliary capacitive element 1721, and the extension line connecting the second auxiliary capacitive element 1712 and the fifth auxiliary capacitive element 1722, may intersect or be twisted within a predetermined range from the central axis CA. 【0143】 In the same manner as described above, the first to fourth antenna segments 1110, 1120, 1130, and 1140 can be electrically connected via the first to third auxiliary capacitive elements 1711, 1712, and 1713. Furthermore, the fifth to eighth antenna segments 1210, 1220, 1230, and 1240 can be electrically connected via the fourth to sixth auxiliary capacitive elements 1721, 1722, and 1723. 【0144】 The number of auxiliary capacitive elements may be determined based on the number of layers, turns, and antenna segments of the antenna structure 1000. For example, referring again to Figure 7, if the antenna structure 1000 consists of one layer containing two turns, each having four antenna segments, then the antenna structure 1000 may contain seven auxiliary capacitive elements. 【0145】 On the other hand, each of the multiple turns constituting the antenna structure 1000 can contain a different number of antenna segments. For example, referring to Figure 8, the antenna structure 1000 can include a first turn containing the first to fourth antenna segments 1110, 1120, 1130, and 1140, and a second turn containing the fifth to tenth antenna segments 1210, 1220, 1230, 1240, 1250, and 1260. 【0146】 Here, each antenna segment within the antenna structure 1000 can have substantially the same length or different lengths. For example, the antenna segment of the first turn and the antenna segment of the second turn can both have the same length. In yet another example, each antenna segment of the first turn can have a first length, and each antenna segment of the second turn can have a second length that is shorter than the first length. In this case, the first and second lengths can be set based on the radius of curvature of each turn. In this case, the antenna segments constituting each turn of the antenna structure 1000 do not necessarily have to extend to the same length. 【0147】 On the other hand, if the multiple turns constituting the antenna structure 1000 each contain a different number of antenna segments, then each turn within the antenna structure 1000 can contain a different number of auxiliary capacitive elements. As an example, referring again to Figure 8, the first turn of the antenna structure 1000 can contain the first to third auxiliary capacitive elements 1711, 1712, and 1713, while the second turn can contain the fourth to eighth auxiliary capacitive elements 1721, 1722, 1723, 1724, and 1725. 【0148】 Here, the auxiliary capacitive elements included in the first turn and the auxiliary capacitive elements included in the second turn of the antenna structure 1000 can have a predetermined positional relationship. Specifically, at least one of the auxiliary capacitive elements included in the first turn and at least one of the auxiliary capacitive elements included in the second turn can be located on a straight line. For example, referring again to Figure 8, the second auxiliary capacitive element 1712 of the first turn and the sixth auxiliary capacitive element 1723 of the second turn of the antenna structure 1000 can be positioned perpendicular to the central axis CA and within a predetermined region from a straight line passing through the center of the antenna structure (100). However, the positional relationship between the auxiliary capacitive elements within the antenna structure 1000 is not limited to the case described above, and the auxiliary capacitive elements within the antenna structure 1000 may be arbitrarily arranged without any specific positional relationship between them. 【0149】 Multiple layers constituting the antenna structure 1000 can each contain a different number of antenna segments and a different number of auxiliary capacitive elements. The number of antenna segments and auxiliary capacitive elements contained in different layers can be set in the same manner as the method for setting the number of antenna segments and auxiliary capacitive elements contained in different layers as described above. 【0150】 Auxiliary capacitive elements are placed between turns and can electrically or physically connect antenna segments. For example, referring again to Figure 7, an auxiliary capacitive element is placed between the first turn and the second turn and can electrically connect the first and second turns. Specifically, the first-turn capacitive element 1731 can connect the fourth antenna segment 1140, which constitutes the first turn, and the fifth antenna segment 1210, which constitutes the second turn, in series. In this case, the first-turn capacitive element 1731 can be connected to the antenna segments directly or via a separate connection such as a conductor, so that the antenna segment connected to the first-turn capacitive element 1731 can have a shorter or longer length than the other antenna segments. Although not shown, the first-turn capacitive element 1731 may also connect the first antenna segment 1110, which constitutes the first turn, and the eighth antenna segment 1240, which constitutes the second turn, in series. In this case, the antenna structure 1000 can be wound in a counterclockwise direction from an inward turn to an outward turn, with reference to the direction from the first plane P1 to the second plane P2. 【0151】 Here, the inter-turn capacitive element may have a different shape from other auxiliary capacitive elements or have a separate connection to connect the turns. For example, one end and the other end of the first inter-turn capacitive element 1731 may be spaced at different distances from the central axis CA. Specifically, one end of the first inter-turn capacitive element 1731 connected to the fourth antenna segment 1140 of the first turn may be spaced at a shorter distance from the central axis CA than the other end of the first inter-turn capacitive element 1731 connected to the fifth antenna segment 1210 of the second turn. In yet another example, the first inter-turn capacitive element 1731 may include a first connection extending from one end of the first inter-turn capacitive element 1731 to the fourth antenna segment 1140 and a second connection extending from the other end of the first inter-turn capacitive element 1731 to the fifth antenna segment 1210. In this case, the first and second connection parts may include straight or curved conductors and be spaced at different distances from the central axis CA. 【0152】 By including inter-turn capacitive elements in the antenna structure 1000, all antenna segments within the antenna structure 1000 can be electrically connected. 【0153】 The main capacitive elements 1500 and 1600 can physically or electrically connect the antenna segment and the RF power supply 200. For example, referring again to Figure 7, the first main capacitive element 1500 can electrically connect the first antenna segment 1110 and the first terminal of the inverter 230, and the second main capacitive element 1600 can electrically connect the eighth antenna segment 1240 and the second terminal of the inverter 230. 【0154】 Alternatively, contrary to what is shown in Figure 7, the first main capacitive element 1500 can electrically connect the fourth antenna segment 1140 and the first terminal of the inverter 230, and the second main capacitive element 1600 can electrically connect the fifth antenna segment 1240 and the second terminal of the inverter 230. 【0155】 On the other hand, if the antenna structure 1000 is realized in a first turn including the first to fourth antenna segments 1110, 1120, 1130, and 1140, then either the first antenna segment 1110 or the fourth antenna segment 1140 can be electrically connected to the first terminal of the inverter 230 via the first principal capacitive element 1500, and the other can be electrically connected to the second terminal of the inverter 230 via the second principal capacitive element 1600. 【0156】 The main capacitive elements 1500 and 1600 may have a specific shape or separate connection for connecting the RF power supply 200 and the antenna structure 1000. For example, the first main capacitive element 1500 may extend from one end of the first antenna segment 1110 in a direction parallel to the central axis CA. Alternatively, the first main capacitive element 1500 may extend from one end of the first antenna segment 1110 in a direction away from the central axis CA. Alternatively, the first main capacitive element 1500 may be positioned such that, when viewed from a direction perpendicular to the first plane P1, at least a portion of the first main capacitive element 1500 overlaps with the first inter-turn capacitive element 1731 and at least a portion of the antenna segment. The second main capacitive element 1600 may extend from the other end of the eighth antenna segment 1240 parallel to the first plane P1. Alternatively, the second principal capacitive element 1600 may extend at the other end of the eighth antenna segment 1240 in a direction parallel to the central axis CA. 【0157】 On the other hand, at least one of the first main capacitive element 1500 and the second main capacitive element 1600 can be omitted from the antenna structure 1000. In this case, the RF power supply 200 can provide electrical elements corresponding to the main capacitive elements 1500 and 1600. Also, at least some of the auxiliary capacitive elements may be omitted. 【0158】 Furthermore, the main capacitive elements 1500, 1600 and the auxiliary capacitive elements may be positioned at a certain distance from the antenna segment. For example, if the auxiliary capacitive elements are large in size or volume, they can be connected to the antenna segment via a separate connection such as a conductor or wire while remaining at a certain distance from the antenna segment. 【0159】 The direction in which current flows through the antenna structure 1000 can be determined by the method of connecting the main capacitive elements 1500, 1600 and the auxiliary capacitive elements to the antenna segments. For example, referring again to Figure 7, if the first main capacitive element 1500 is connected in series with the first antenna segment 1110, the fourth antenna segment 1140 and the fifth antenna segment 1210 are connected in series via the first inter-turn capacitive element 1731, and the second main capacitive element 1600 is connected in series with the eighth antenna segment 1240, then when power is applied to the antenna structure 1000, current may flow in the same direction (clockwise or counterclockwise) through the first and second turns. In yet another example, unlike what is shown in Figure 6, if the first main capacitive element 1500 is connected in series with the fourth antenna segment 1140, the first antenna segment 1110 and the eighth antenna segment 1210 are connected in series via the first inter-turn capacitive element 1731, and the second main capacitive element 1600 is connected in series with the fifth antenna segment 1210, then when power is applied to the antenna structure 1000, current can flow in the same direction (clockwise or counterclockwise) through the first and second turns. In this case, if current flows in the same direction through the first and second turns, the intensity of the induced electric field for plasma generation may increase compared to if the current flows in different directions through the first and second turns, the potential difference between the antenna segments becomes smaller, and the effect of parasitic capacitance can be reduced. 【0160】 The antenna structure 1000 can generate plasma when an AC signal with a variable drive frequency is applied from the RF power supply 200 via the main capacitive elements 1500 and 1600. 【0161】 Here, the driving frequency of the AC signal applied to the antenna structure 1000 can be varied over time based on the resonant frequency of the load, including the antenna structure 1000 and the plasma. 【0162】 Auxiliary capacitive elements may have a predetermined capacitance or electrostatic capacitance. For example, the capacitance of an auxiliary capacitive element may be set based on at least one of the following: the drive frequency range of the RF power supply 200, the resonant frequency that the antenna structure 1000 should have, the number of antenna segments, and the inductance of the antenna segments. Specifically, when the antenna structure 1000 has a resonant frequency f_r and the total inductance of the antenna inductances within the antenna structure 1000 is L_tot, the capacitance of the auxiliary capacitive elements can be set such that the total capacitance C_tot of the main capacitive elements 1500, 1600 and the auxiliary capacitive elements connected to the antenna segments satisfies the following equation (1). 【0163】 JPEG0007873757000001.jpg21170 【0164】 In this case, the capacitance C_a of each auxiliary capacitive element can be set to a value obtained by multiplying C_tot, which satisfies equation (1), by the number of antenna segments included in the antenna structure 1000, when the capacitance of the series connection of the first main capacitive element 1500 and the second main capacitive element 1600 is equivalent to that of one auxiliary capacitive element. Alternatively, the capacitance C_a of each auxiliary capacitive element may be set to satisfy the following equation (2) when the resonant frequency of the antenna structure 1000 is set to f_r and the inductance of each antenna segment is L_a. 【0165】 JPEG0007873757000002.jpg19170 【0166】 Specifically, if each antenna segment within the antenna structure 1000 has an inductance of approximately 1 μH, and the resonant frequency of the antenna structure 1000 is specified as 5.03 MHz, the capacitance of each auxiliary capacitive element can be set to approximately 1 nF. Alternatively, if each antenna segment within the antenna structure 1000 has an inductance of approximately 0.7 μH, and the capacitance of each auxiliary capacitive element is set to approximately 3.32 nF, the antenna structure 1000 can be driven while satisfying the resonant condition at a driving frequency of approximately 3.3 MHz. 【0167】 When the capacitance of the auxiliary capacitive elements is set to satisfy the above-described conditions, each antenna segment of the antenna structure 1000 will have a potential value within a certain range, thereby reducing the potential difference between the antenna segments. This reduces the electrostatic field due to energy storage coupling, decreases the power consumption of the antenna structure 1000, and improves the durability of the plasma system 10 and the safety of the plasma. Since auxiliary capacitive elements are placed between the antenna segments in the antenna structure 1000, the potential of each antenna segment will be described later. 【0168】 The main capacitive elements 1500 and 1600 can have a predetermined capacitance or electrostatic capacitance. For example, the capacitance of the main capacitive elements 1500 and 1600 may be set based on at least one of the following: the drive frequency range of the RF power supply 200, the resonant frequency that the antenna structure 1000 should have, the number of antenna segments, the inductance of the antenna segments, and the capacitance of each auxiliary capacitive element. Specifically, when the capacitance of the first main capacitive element 1500 is C1, the capacitance of the second main capacitive element 1600 is C2, and the capacitance of each auxiliary capacitive element is C_a, C1 and C2 can be set to satisfy certain conditions. More specifically, C1 and C2 may be set to satisfy the following equation (3). 【0169】 JPEG0007873757000003.jpg16170 【0170】 If the main capacitive elements 1500 and 1600 satisfy equation (3) described above, the maximum voltage applied to the antenna segment within the antenna structure 1000 can be reduced to improve the resonant effect and increase the stability and efficiency of the plasma system 10. 【0171】 In the above description, the main embodiment was explained as a case in which the antenna structure 1000 is configured with four antenna segments arranged in two turns. However, the technical concept of this specification is not limited to this, and in an antenna structure 1000 configured with multiple turns, each having multiple antenna segments, the main capacitive elements 1500, 1600 and auxiliary capacitive elements can be arranged in the same manner as in the above-described embodiment. 【0172】 Referring to Figures 9 and 10, the antenna structure 1000 is configured in a tubular shape and may include antenna segments, a first principal capacitive element 1500, a second principal capacitive element 1600, and auxiliary capacitive elements. 【0173】 In the following, unless otherwise specified, the content described in Figures 5 to 8 can be applied similarly, and redundant content will be omitted. For example, a tubular antenna structure can be understood as multiple antenna structures arranged in different planes but connected to each other physically or electrically. 【0174】 The antenna segments contained within the tubular antenna structure 1000 can be arranged in multiple layers. 【0175】 Referring again to Figure 9, the antenna segments may be arranged in two layers on a first plane P1 and a second plane P2 with respect to the central axis CA. Specifically, the first layer may include the first to fourth antenna segments 1110, 1120, 1130, and 1140, and the second layer may include the ninth to twelfth antenna segments 1310, 1320, 1330, and 1340. Here, the antenna segments of the first layer may have a first radius of curvature RC1, and the antenna segments of the second layer may have a radius of curvature corresponding to the first radius of curvature RC1. 【0176】 Here, the second plane P2 can mean a virtual plane that is perpendicular to or intersects the central axis CA at one point. Alternatively, the second plane P2 can mean a plane parallel to the first plane P1. 【0177】 Each antenna segment of the second layer may be arranged to correspond to each antenna segment of the first layer. For example, if the first to fourth antenna segments 1110, 1120, 1130, and 1140 are arranged in the first to fourth quadrants of the first plane P1, respectively, then the ninth to twelfth antenna segments 1310, 1320, 1330, and 1340 can be arranged in the first to fourth quadrants of the second plane P1, respectively. 【0178】 The antenna segments of the second layer can extend to a length corresponding to the length of the antenna segments of the first layer. For example, if the first antenna segment 1110 is positioned to extend to a first length, the ninth antenna segment 1310 can extend to a first length. Here, the central angle that the first antenna segment 1110 extending to a first length makes with the central axis CA can similarly correspond to the central angle that the ninth antenna segment 1310 extending to a first length makes with the central axis CA in the second plane P2. 【0179】 The distance between the first and second layers can be set based on the parasitic capacitance that may occur between the antenna segments. For example, the distance between the first and second layers may be set to the distance that minimizes the effect of parasitic capacitance between the first antenna segment 1110 and the ninth antenna segment 1310 when power is applied to the antenna structure 1000. Specifically, the distance between the first and second layers may be set within the range of 0.5 mm to 1.5 mm. In this case, the distance between the first and second layers can be set to a distance that prevents interlayer arc discharge from occurring when the plasma system 10 is driven at a specific drive frequency. 【0180】 The inductance of the second layer antenna segment may be set based on the inductance of the first layer antenna segment. For example, the inductance of the ninth antenna segment 1310 can correspond to the inductance of the first antenna segment 1110. In yet another example, the inductance of the ninth antenna segment 1310 can be set to be greater than the inductance of the first antenna segment 1110. 【0181】 The tubular antenna structure 1000 can be arranged around the plasma generating unit 2000. For example, referring again to Figure 9, the antenna segments may be arranged around the plasma generating unit 2000. Specifically, the first to fourth antenna segments 1110, 1120, 1130, 1140 and the ninth to twelfth antenna segments 1310, 1320, 1330, 1340 may be arranged to be in contact with the plasma generating unit 2000. 【0182】 The tubular antenna structure 1000 can include auxiliary capacitive elements. For example, referring again to Figure 9, in the first layer of the antenna structure 1000, the first to third auxiliary capacitive elements 1711, 1712, and 1713 can be placed between the first to fourth antenna segments 1110, 1120, 1130, and 1140. The first auxiliary capacitive element 1711 can be placed between the first antenna segment 1110 and the second antenna segment 1120. The second auxiliary capacitive element 1712 can be placed between the second antenna segment 1120 and the third antenna segment 1130. The third auxiliary capacitive element 1713 can be placed between the third antenna segment 1130 and the fourth antenna segment 1140. In the second layer of the antenna structure 1000, the seventh to ninth auxiliary capacitive elements 1751, 1752, and 1753 can be placed between the ninth to twelfth antenna segments 1310, 1320, 1330, and 1340. The seventh auxiliary capacitive element 1751 can be placed between the ninth antenna segment 1310 and the tenth antenna segment 1320. The eighth auxiliary capacitive element 1752 can be placed between the tenth antenna segment 1320 and the eleventh antenna segment 1330. The ninth auxiliary capacitive element 1753 can be placed between the eleventh antenna segment 1330 and the twelfth antenna segment 1340. 【0183】 Here, the seventh auxiliary capacitive element 1751 may be positioned adjacent to the eighth auxiliary capacitive element 1752 in the arc direction and adjacent to the first auxiliary capacitive element 1711 in a direction parallel to the central axis CA. The eighth auxiliary capacitive element 1752 may be positioned adjacent to the seventh auxiliary capacitive element 1751 and the ninth auxiliary capacitive element 1753 in the arc direction and adjacent to the second auxiliary capacitive element 1712 in a direction parallel to the central axis CA. The ninth auxiliary capacitive element 1753 may be positioned adjacent to the eighth auxiliary capacitive element 1752 in the arc direction and adjacent to the third auxiliary capacitive element 1713 in a direction parallel to the central axis CA. 【0184】 The auxiliary capacitive elements may be arranged such that they have a predetermined positional relationship with one another between layers. For example, referring again to Figure 9, at least two of the first to third auxiliary capacitive elements 1711, 1712, 1713 and the seventh to ninth auxiliary capacitive elements 1751, 1752, 1753 can be arranged on a virtual line parallel to the central axis CA. Specifically, the virtual extension line connecting the first auxiliary capacitive element 1711 and the seventh auxiliary capacitive element 1751 may be parallel to the central axis CA. In yet another example, the auxiliary capacitive elements of the first layer and the auxiliary capacitive elements of the second layer may be arranged in corresponding positions to each other. Specifically, a virtual extension line connecting one of the first to third auxiliary capacitive elements 1711, 1712, and 1713 to one of the seventh to ninth auxiliary capacitive elements 1751, 1752, and 1753, and a virtual extension line connecting one of the other first to third auxiliary capacitive elements 1711, 1712, and 1713 to one of the other seventh to ninth auxiliary capacitive elements 1751, 1752, and 1753, may intersect or be twisted within the central axis CA or a predetermined region from the central axis CA. 【0185】 The auxiliary capacitive element can be attached to the plasma generation unit 2000 or positioned at a distance from it. For example, referring again to Figure 8, the first auxiliary capacitive element 1711 can be positioned at a distance of a first radius of curvature RC1 from the central axis CA and can be in contact with the plasma generation unit 2000. In yet another example, the first auxiliary capacitive element 1711 may be positioned at a distance longer than the first radius of curvature RC1 from the central axis CA and not in contact with the plasma generation unit 2000. 【0186】 Auxiliary capacitive elements placed within the tubular antenna structure 1000 may include interlayer capacitive elements. For example, referring again to Figure 9, the first and second layers may be electrically connected in series via the first interlayer capacitive element 1741. Specifically, the first interlayer capacitive element 1741 can connect the fourth antenna segment 1140, which constitutes the first layer, and the ninth antenna segment 1310, which constitutes the second layer, in series. Alternatively, as not shown in Figure 9, the first interlayer capacitive element 1741 can connect the first antenna segment 1110, which constitutes the first layer, and the twelfth antenna segment 1340, which constitutes the second layer, in series. 【0187】 Here, the interlayer capacitive element may have a different shape from other auxiliary capacitive elements or have separate connection points for connecting the layers. For example, one end and the other end of the first interlayer capacitive element 1741 may be located in different planes. Specifically, one end of the first interlayer capacitive element 1741 connected to the fourth antenna segment 1140 of the first layer may be located in the first plane P1, and the other end of the first interlayer capacitive element 1741 connected to the ninth antenna segment 1310 of the second layer may be located in the second plane P2. In yet another example, the first interlayer capacitive element 1741 may include a third connection point extending from one end of the first interlayer capacitive element 1741 to the fourth antenna segment 1140 and a fourth connection point extending from the other end of the first interlayer capacitive element 1741 to the ninth antenna segment 1310. In this case, the third and fourth connection sections may include straight or curved conductors and may be attached to the plasma generating section 2000 or separated by a certain distance. In this case, the antenna segment connected to the first interlayer capacitive element 1741 may have a shorter or longer length than the other antenna segments. 【0188】 By including interlayer capacitive elements in the antenna structure 1000, all antenna segments within the antenna structure 1000 can be electrically connected. 【0189】 The tubular antenna structure 1000 can be physically or electrically connected to the RF power supply 200 via the main capacitive elements 1500 and 1600. For example, referring again to Figure 9, the first antenna segment 1110 can be electrically connected to the first terminal of the inverter 230 via the first main capacitive element 1500, and the twelfth antenna segment 1340 can be electrically connected to the second terminal of the inverter 230 via the second main capacitive element 1600. Alternatively, the fourth antenna segment 1140 can be electrically connected to the first terminal of the inverter 230 via the first main capacitive element 1500, and the ninth antenna segment 1310 can be electrically connected to the second terminal of the inverter 230 via the second main capacitive element 1600. 【0190】 The direction in which current flows through the antenna structure 1000 can be determined by the method of connecting the main capacitive elements 1500, 1600 and auxiliary capacitive elements to the antenna segments. For example, referring again to Figure 9, if the first main capacitive element 1500 is connected in series with the first antenna segment 1110, the fourth antenna segment 1140 and the ninth antenna segment 1310 are connected in series via the first interlayer capacitive element 1741, and the second main capacitive element 1600 is connected in series with the twelfth antenna segment 1340, then when power is applied to the antenna structure 1000, current can flow through the first and second layers in the same direction (clockwise or counterclockwise). In this case, when current flows through the first and second layers in the same direction, the strength of the induced electric field for plasma generation may increase compared to when current flows through the first and second layers in different directions, the potential difference between the antenna segments becomes smaller, and the effect of parasitic capacitance can be reduced. 【0191】 The tubular antenna structure 1000 may include antenna segments arranged in multiple turns and multiple layers. 【0192】 Referring to Figure 10, the tubular antenna structure 1000 may include the first to fourth antenna segments 1110, 1120, 1130, 1140 located in the first turn of the first layer, the fifth to eighth antenna segments 1210, 1220, 1230, 1240 located in the second turn of the first layer, the ninth to twelfth antenna segments 1310, 1320, 1330, 1340 located in the first turn of the second layer, the thirteenth to sixteenth antenna segments 1410, 1420, 1430, 1440 located in the second turn of the second layer, main capacitive elements 1500, 1600, and auxiliary capacitive elements. 【0193】 The tubular antenna structure 1000 shown in Figure 10 can have antenna segments arranged in multiple turns and multiple layers, similar to those described in Figures 7 to 9. 【0194】 The auxiliary capacitive elements placed within the multi-turn, multi-layer antenna structure 1000 described above can include inter-turn capacitive elements and inter-layer capacitive elements. For example, referring again to Figure 10, the multi-turn, multi-layer antenna structure 1000 can include a first inter-turn capacitive element 1731 that connects turns in the first layer, a second inter-turn capacitive element 1733 that connects turns in the second layer, and a first inter-layer capacitive element 1741 that connects the first and second layers. 【0195】 On the other hand, if the antenna segments in the antenna structure 1000 are arranged in three or more layers, the antenna structure 1000 may include multiple interlayer capacitive elements or interlayer connections. 【0196】 Here, multiple interlayer capacitive elements or interlayer connections may be arranged so as to have a predetermined positional relationship with respect to each other. For example, the interlayer capacitive elements may be arranged rotated at a predetermined angle with respect to the central axis CA. Specifically, the first interlayer capacitive element 1741 connecting the first and second layers can be arranged so as to have a predetermined angle with respect to the central axis CA with respect to the second interlayer capacitive element (not shown) connecting the second and third layers. 【0197】 Furthermore, multiple interlayer capacitive elements or interlayer connections can connect antenna segments in each layer such that the inter-turn connection region where turns are connected to each other has a predetermined angle with respect to the central axis CA. For example, if the fourth antenna segment 1140 of the first turn and the fifth antenna segment 1210 of the second turn are connected in the first layer via an auxiliary capacitive element, the first interlayer capacitive element 1741 can connect the eighth antenna segment 1240 and the tenth antenna segment 1320, and the second inter-turn capacitive element 1733 can connect the ninth antenna segment 1310 and the fourteenth antenna segment 1420. In this case, since the inter-turn connection region is a region where two different turns are connected in each layer, the plasma generation unit 2000 does not come into contact with the antenna segments in the inter-turn connection region, and it may be difficult to obtain a cooling effect from the cooling water flowing through the antenna segments. However, as described above, by having the inter-turn connection regions where turns are connected in multiple layers form a predetermined angle, the areas where the plasma generation unit 2000 is not cooled can be distributed differently for each layer. 【0198】 In an antenna structure 1000 composed of multiple turns and multiple layers, the direction of the current flowing through each turn of each layer can be determined by the method of connecting the main capacitive elements 1500, 1600 and auxiliary capacitive elements to the antenna segments. For example, referring again to Figure 10, if the first main capacitive element 1500 is connected in series with the first antenna segment 1110, the fourth antenna segment 1140 and the fifth antenna segment 1210 are connected in series via the first inter-turn capacitive element 1731, the eighth antenna segment 1240 and the ninth antenna segment 1310 are connected in series via the first inter-layer capacitive element 1741, the twelfth antenna segment 1340 and the thirteenth antenna segment 1410 are connected in series via the second inter-turn capacitive element 1733, and the second main capacitive element 1600 is connected in series with the sixteenth antenna segment 1440, then when power is applied to the antenna structure 1000, the first turn of the first layer, the second turn of the first layer, the first turn of the second layer, and the second turn of the second layer can all carry current in the same direction (clockwise or counterclockwise). In yet another example, if the first main capacitive element 1500 is connected in series with the first antenna segment 1110, the fourth antenna segment 1140 and the fifth antenna segment 1210 are connected in series via the first inter-turn capacitive element 1731, the eighth antenna segment 1240 and the thirteenth antenna segment 1410 are connected in series via the first inter-layer capacitive element 1741, the sixteenth antenna segment 1440 and the ninth antenna segment 1310 are connected in series via the second inter-turn capacitive element 1733, and the second main capacitive element 1600 is connected in series with the twelfth antenna segment 1340, then when power is applied to the antenna structure 1000, the first turn of the first layer, the second turn of the first layer, the first turn of the second layer, and the second turn of the second layer can all carry current in the same direction (clockwise or counterclockwise). 【0199】 As described above, when each turn in each layer carries current in the same direction, the strength of the induced electric field for plasma generation can be increased compared to when the currents carry current in different directions, and the potential difference between antenna segments can be reduced, thereby mitigating the effects of parasitic capacitance. 【0200】 In the above description, we have mainly explained an example in which the antenna structure 1000, composed of multiple turns and multiple layers, includes four antenna segments per turn, two turns per layer, and a total of two layers. However, the technical concept of this specification is not limited to this, and the antenna structure 1000 may also include p antenna segments per turn, q turns per layer, and a total of r layers (where p, q, and r are natural numbers), and it goes without saying that the above description applies in the same / similar way. 【0201】 The following section describes the case where power is applied to the antenna structure 1000, referring to Figures 11 to 13. 【0202】 On the other hand, for the sake of explanation, unless otherwise stated, the antenna structure 1000 is assumed to include a plurality of antenna segments and auxiliary capacitive elements extending in one direction along an arc from one end to the other, as shown in Figures 7 to 10, but the technical concept of this specification is not limited to this. 【0203】 Figure 11 is a diagram relating to the equivalent circuit of an antenna structure 1000 according to one embodiment of this specification. 【0204】 Referring to Figure 11, the equivalent circuit of the antenna structure 1000 can include a circuit in which capacitors and inductors are arranged in alternating series connections. 【0205】 The voltage or potential difference at any node in the equivalent circuit of the antenna structure 1000 can be set based on the AC power supply or AC signal applied to the antenna structure 1000 from the RF power supply 200. For example, if the RF power supply 200 applies an AC voltage with amplitude V to the antenna structure 1000, the potential difference at one node in the antenna structure 1000 can oscillate with an amplitude of V or less. 【0206】 The following describes the voltage at different locations within the antenna structure 1000 when an AC power supply is applied to the antenna structure 1000, depending on the presence or absence of capacitive elements. 【0207】 Here, location-specific voltage can mean the voltage that an antenna segment has relative to a reference node at a specific location within the antenna structure 1000. For example, location-specific voltage can mean the voltage that each antenna segment has relative to a reference node at a specific node between one end, the other end, or between the two ends, at some point in time after an AC power supply has been applied to the antenna structure 1000. 【0208】 Here, the reference node can mean a point that serves as a reference for calculating the positional voltage. For example, the reference node may include a ground node, the first or second terminal of the RF power supply 200, one end or the other end, and a point within the antenna structure 1000. For the sake of explanation, the calculation will be described below assuming that the reference node is one end of the RF power supply 200, but the technical ideas of this specification are not limited to this and can be applied in the same / similar way even if the reference node is set differently. 【0209】 Figure 12 is a graph showing the potential at different locations within an antenna structure 1000 according to one embodiment of this specification. 【0210】 Referring to Figure 12, when antenna segments within the antenna structure 1000 are connected in series without capacitive elements, the antenna segments can have voltages in different ranges at any given time. For example, when the antenna segments are connected in series in the arrangement shown in Figure 6, as an AC power supply is applied, voltages of different magnitudes may be applied to the adjacent first antenna segment 1110 and fifth antenna segment 1210. In this case, the influence of parasitic capacitance between the first and fifth antenna segments 1110 and 1210 becomes significant, which may be undesirable for plasma induction. 【0211】 Referring again to Figure 12, if the antenna segments within the antenna structure 1000 are connected in series without capacitive elements, voltage distribution by capacitive elements becomes impossible, and the magnitude of the voltage applied to each antenna segment may increase. When the magnitude of the voltage applied to each antenna segment increases in this way, unnecessary power consumption occurs, and the plasma system 10 may become unstable. 【0212】 Figure 13 is a graph showing the voltage at different positions within an antenna structure 1000 containing a capacitive element according to one embodiment of this specification. 【0213】 Referring to Figure 13, the antenna structure 1000 may include a first node N1 to which the first main capacitive element 1500 and the first antenna segment 1110 are connected, a second node N2 to which the first antenna segment 1110 and the first auxiliary capacitive element 1711 are connected, a third node N3 to which the first auxiliary capacitive element 1711 and the second antenna segment 1120 are connected, a fourth node N4 to which the second antenna segment 1120 and the second auxiliary capacitive element 1712 are connected, a first point Pt1 indicating an arbitrary position within the first antenna segment 1110, and a second point Pt2 indicating an arbitrary position within the second antenna segment 1120. 【0214】 Here, Figure 13 is a graph showing the maximum voltage applied to the antenna segments when an AC power supply is applied to the antenna structure 1000, and the signs shown can represent the phase difference. The voltages in Figure 13 can represent the voltage at the point in time when the maximum voltage is present at each location within the antenna structure 1000. On the other hand, in an AC waveform, the maximum voltage can be divided into cases where it has a positive value and cases where it has a negative value, and the graph in Figure 13 can be interpreted as representing the voltage at each location within the antenna structure 1000 with respect to the point in time when the first node N1 has a negative maximum voltage. For example, the first node N1 and the second node N2, which have maximum voltages of -V' and +V', have a maximum voltage of only V', which is an absolute value, and it can be said that AC voltages with opposite signs were applied to them. That is, it can be said that AC voltages with an amplitude of V' and a phase difference of half a period were applied to the first node N1 and the second node N2. In other words, at the point when a voltage value of -V' is measured via the first node N1, a voltage value of +V' can be measured via the second node N2. 【0215】 Referring again to Figure 13, in the antenna structure 1000, the voltages of corresponding nodes can correspond to each other. For example, the voltages of the first node N1 and the third node N3 can correspond to each other. Or, the maximum voltages of the first node N1 and the third node N3 can correspond to each other. The voltages of the second node N2 and the fourth node N4 can correspond to each other. Or, the maximum voltages of the second node N2 and the fourth node N4 can correspond to each other. The voltage at one end of the first antenna segment 1110 and the voltage at one end of the second antenna segment 1120 can correspond to each other. The voltage at one end of the first auxiliary capacitive element 1711 and the voltage at one end of the second auxiliary capacitive element 1712 can correspond to each other. The voltage at one end of the first antenna segment 1110 and the voltage at one end of the fifth antenna segment 1210 or the ninth antenna segment 1310 adjacent to the first antenna segment 1110 can correspond to each other. 【0216】 On the other hand, the RMS values of the voltages of corresponding nodes can correspond to each other. For example, the RMS values of the voltages of the first node N1 and the third node N3, and the RMS values of the voltages of the second node N2 and the fourth node N4 can correspond to each other. 【0217】 Here, the statement that the voltages of multiple nodes correspond to each other or that multiple nodes have corresponding voltages to each other can mean that multiple nodes have the same voltage or maximum voltage relative to a reference node, or that the difference between the voltages or maximum voltages of multiple nodes relative to the reference node is within a predetermined range. 【0218】 Multiple antenna segments can contain points that correspond to each other. For example, a first point Pt1 located between one end and the other end of a first antenna segment 1110 can correspond to a second point Pt1 located between one end and the other end of a second antenna segment 1120. Specifically, the distance from one end of the first antenna segment 1110 to the first point Pt1 can correspond to the distance from one end of the second antenna segment 1120 to the second point Pt2. In another example, a first point Pt1 in the first antenna segment 1110 can correspond to a third point (not shown) in a fifth antenna segment 1210. In this case, the angle between one end of the first antenna segment 1110, the central axis CA, and the first point Pt1 can correspond to the angle between one end of the fifth antenna segment 1210, the central axis CA, and the third point. Specifically, the extension line connecting the first point Pt1 and the third point may intersect or twist with the central axis CA. In yet another example, the first point Pt1 in the first antenna segment 1110 can correspond to the fourth point (not shown) in the ninth antenna segment 1310. Specifically, the extension line connecting the first point Pt1 and the fourth point may be parallel or twisted with the central axis CA. 【0219】 Within the above-mentioned multiple antenna segments, corresponding points can have corresponding voltages. Alternatively, corresponding points within multiple antenna segments can have corresponding effective voltages. In this way, when antenna segments are adjacent to each other, the effect of parasitic capacitance can be reduced by having corresponding voltages at corresponding points. 【0220】 Here, the statement that the voltages of multiple points correspond to each other or that multiple points have corresponding voltages to each other can mean that the multiple points have the same voltage or maximum voltage relative to the reference node, or that the difference in voltages or maximum voltages of the multiple nodes relative to the reference node is within a predetermined range. Furthermore, the statement that the angles between one end of each antenna segment and the central axis CA correspond to each other can mean that the multiple points are positioned at the same or different angles rotated relative to the central axis CA from one end of each antenna segment. 【0221】 On the other hand, referring again to Figure 13, the magnitude of the voltage at any point within the antenna segment may be less than the magnitude of the voltage at the node where the antenna segment and the capacitive element are connected. For example, the maximum voltages at the first point Pt1 and the second point Pt2 may be less than those at the second node N2 or the fourth node N4. 【0222】 The voltages at any node or position within the antenna structure 1000 can have different phases or different signs at any given time. For example, at some point in time, the voltages at the first node N1 and the third node N2 may have the same phase, while the voltages at the first node N1 and the second node N2 may have equal magnitudes but opposite phases or signs. In yet another example, the voltages at the second node N2 and the third node N3 may have equal magnitudes but opposite phases or signs. 【0223】 In the above, for the sake of explanation, the voltages at nodes and points have been described with reference to a specific antenna segment within the antenna structure 1000. However, the technical ideas of this specification are not limited thereto and can be applied in the same / similar way to each antenna segment within the antenna structure 1000. 【0224】 The positional voltages within the antenna structure 1000 can be reduced as the number of auxiliary capacitive elements included in the antenna structure 1000 increases. Alternatively, the positional voltages within the antenna structure 1000 can be determined based on the inductance of the antenna segments included in the antenna structure 1000 or the capacitance of the auxiliary capacitive elements. Specifically, unlike what is shown in Figure 13, when auxiliary capacitive elements are placed between antenna segments, the magnitude of the voltage applied to each antenna segment is determined to correspond to each other, reducing the effect of parasitic capacitance between adjacent antenna segments. Furthermore, when auxiliary capacitive elements are placed within the antenna structure 1000, the magnitude of the voltage applied to the antenna segments decreases, reducing the power consumption of the antenna structure 1000 and improving the safety of the plasma system 10. 【0225】 The main capacitive elements 1500 and 1600 can reduce the amplitude of the voltage applied to the antenna structure 1000. Alternatively, the main capacitive elements 1500 and 1600 can reduce the maximum amplitude of the voltage that can be applied to each antenna segment. 【0226】 Alternatively, by connecting the main capacitive elements 1500 and 1600 to the antenna segments, the maximum voltage of the nodes within the antenna structure 1000 relative to the reference node may not be zero. For example, if a voltage drop occurs in the main capacitive elements 1500 and 1600 relative to the reference node, the first to fourth nodes N1, N2, N3, and N4 may have a maximum voltage other than zero. 【0227】 Alternatively, the main capacitive elements 1500 and 1600 can apply voltages of the same amplitude to the nodes within the antenna structure 1000. For example, the main capacitive elements 1500 and 1600 can cause the first node N1 and the second node N2 to have voltages of the same amplitude relative to the reference node. In yet another example, the main capacitive elements 1500 and 1600 can cause the first node N1 and the second node N2 to have voltages of equal amplitude but different signs applied to each other. In this way, the main capacitive elements 1500 and 1600 can reduce the voltage or maximum voltage applied to the components within the antenna structure 1000, thereby improving the electrical durability of the antenna structure 1000. 【0228】 On the other hand, when the plasma system 10 is driven, the antenna structure 1000 can induce inductively coupled plasma in the plasma generation unit 2000, causing its temperature to rise. Consequently, there is a risk of damage to the plasma generation unit 2000, and to prevent this, the antenna structure 1000 can absorb heat from the plasma generation unit 2000 by including a cooling water channel. At this time, the degree to which the antenna structure 1000 absorbs heat generated in the plasma generation unit 2000 may vary depending on the structure and shape of the antenna structure 1000. 【0229】 The following describes the structure and shape of an antenna structure 1000 for efficiently absorbing the heat generated in the plasma generation unit 2000 when plasma is induced during the operation of the plasma system 10 according to one embodiment of this specification, with reference to Figures 14 and 15. 【0230】 Figure 14 is a diagram relating to an antenna structure 1000 having a square cross-section according to one embodiment of this specification. 【0231】 Figure 15 is a diagram showing a cross-section A-A' of an antenna structure 1000 according to one embodiment of this specification. 【0232】 Referring to Figure 14, the antenna structure 1000 can include a turn antenna, an antenna end, an inter-turn connection, and a clamping section 3400. Specifically, it can include first to third turn antennas 3110, 3120, and 3130, first and second antenna ends 3310 and 3320, first and second inter-turn connections 3210 and 3220, and a clamping section 3400. 【0233】 A turn antenna can mean an antenna that forms a single turn within an antenna structure 1000. For example, as shown in Figure 14, a turn antenna may include first to third turn antennas 3110, 3120, and 3130. Specifically, the first to third turn antennas 3110, 3120, and 3130 may be configured in a circular or annular shape with different radii of curvature with respect to the central axis CA. More specifically, the second turn antenna 3120 may be positioned to enclose the first turn antenna 3110, and the third turn antenna 3130 may be positioned to enclose the second turn antenna 3120. In this case, the first to third turn antennas 3110, 3120, and 3130 may be positioned on a horizontal axis HA perpendicular to the central axis CA. Alternatively, the first to third turn antennas 3110, 3120, and 3130 may be positioned at different distances from the horizontal axis HA. 【0234】 A turn antenna may have a rectangular cross-section. However, the technical concept of this specification is not limited thereto, and the cross-section of a turn antenna may be a polygon, a circle, an ellipse, or a geometric shape consisting of curves and straight lines, in addition to a rectangular shape. 【0235】 The turn antennas can be physically or electrically connected to the RF power supply 200 via their terminal antennas. For example, the first turn antenna 3110 may be physically or electrically connected to the first antenna terminal 3310, which in turn may be physically or electrically connected to one end of the RF power supply 200. Alternatively, for example, the third turn antenna 3130 may be physically or electrically connected to the second antenna terminal 3320, which in turn may be physically or electrically connected to the other end of the RF power supply 200. 【0236】 A turn antenna can be electrically or physically connected to other turn antennas via an inter-turn connector. For example, the first turn antenna 3110 may be electrically or physically connected to one end of the first inter-turn connector 3210, and the second turn antenna 3120 may be electrically or physically connected to the other end of the first inter-turn connector 3210. Alternatively, for example, the second turn antenna 3120 may be electrically or physically connected to one end of the second inter-turn connector 3220, and the third turn antenna 3130 may be electrically or physically connected to the other end of the second inter-turn connector 3220. 【0237】 The antenna end can be physically or electrically connected to the turn antenna and the RF power supply 200. 【0238】 The antenna ends may include conductors extending in any direction. For example, referring again to Figure 14, the first antenna end 3310 may extend in a direction parallel to the central axis CA, and the second antenna end 3320 may extend in a direction perpendicular to the central axis CA. However, the technical ideas of this specification are not limited thereto, and it goes without saying that the first and second antenna ends 3310, 3320 may extend in any direction based on a turn-to-turn connection scheme or the like. 【0239】 The inter-turn connections can be formed in various shapes. For example, the inter-turn connections can have a curved or straight shape. The inter-turn connections will be described in more detail later. 【0240】 The clamping portion 3400 can prevent at least a part of the antenna structure 1000 from expanding or deforming. Specifically, the plasma generation unit 2000 can expand or deform due to the high-temperature thermal energy generated by the induction of plasma, and as a result, the antenna structure 1000, which is in close contact with the plasma generation unit 2000, can also expand or deform, and the clamping portion 3400 can prevent such deformation of the antenna structure 1000. For example, referring again to Figure 14, the elastic clamping portion 3400 can be coupled to the first turn antenna 3110 adjacent to the plasma generation unit 2000. The antenna structure 1000 can be in close contact with the plasma generation unit 2000 by including the clamping portion 3400, and furthermore, it can maintain this close contact even when plasma is induced, thereby increasing the efficiency of the cooling performed by the antenna structure 1000, which will be described later. 【0241】 Here, the clamping portion 3400 can provide the antenna structure 1000 with a clamping force greater than or equal to a preset value. For example, the clamping portion 3400 may include an object that is stretchable or elastic. Also, for example, the clamping portion 3400 may include a piece of metal having a length shorter than the length of the object being clamped. 【0242】 On the other hand, the antenna structure 1000 can cool the plasma generation unit 2000 using cooling water. To this end, referring to Figure 14, the turn antennas within the antenna structure 1000 have a predetermined shape and can include cooling water channels. Specifically, the first to third turn antennas 3110, 3120, and 3130 each include the first to third cooling water channels CFP_1, CFP_2, and CFP_3, respectively, and the first turn antenna 3110 is in contact with the plasma generation unit 2000 and can absorb the heat generated in the plasma generation unit 2000 using the cooling water moving through the first to third cooling water channels CFP_1, CFP_2, and CFP_3. 【0243】 Here, the cooling water may contain a fluid at or below a predetermined temperature. 【0244】 A turn antenna can include an inner diameter surface and an outer diameter surface. For example, the first to third turn antennas 3110, 3120, and 3130 can each include the first to third inner diameter surfaces 3111, 3121, and 3131 and the first to third outer diameter surfaces 3112, 3122, and 3132, respectively. Here, the inner diameter surface and the outer diameter surface can be one of several surfaces that form the turn antenna. Here, the inner diameter surface and the outer diameter surface can mean the inner and outer surfaces of the turn antenna that enclose the central axis CA. Also, here, they can mean opposing surfaces in the turn antenna that are positioned away from the central axis CA, and the inner diameter surface may be closer to the central axis CA of the antenna structure 1000 than the outer diameter surface. In this case, the cross-sectional shape of the turn antenna can be formed based on at least the inner diameter surface and the outer diameter surface. On the other hand, in addition to the inner diameter surface and the outer diameter surface, the turn antenna can also include a top surface and a bottom surface, etc. 【0245】 The cooling water channel may include surfaces corresponding to the inner diameter surface and outer diameter surface of the turn antenna, respectively. For example, the first cooling water channel CFP_1 may include a first surface S11 corresponding to the first inner diameter surface 3111 and a second surface S12 corresponding to the first outer diameter surface 3112. Here, the cross-sectional shape of the first cooling water channel CFP_1 can be formed based on at least the first surface S11 and the second surface S12. Another example is the second cooling water channel CFP_2, which may include a third surface S21 corresponding to the second inner diameter surface 3121 and a fourth surface S22 corresponding to the second outer diameter surface 3122. Here, the cross-sectional shape of the second cooling water channel CFP_2 can be formed based on at least the third surface S21 and the fourth surface S22. On the other hand, in addition to surfaces corresponding to the inner diameter surface and outer diameter surface, the cooling water channel may also include top and bottom surfaces, etc. 【0246】 In the above, it can be interpreted that the cooling water flow path is defined by the inner surface of the turn antenna. For example, one surface of the cooling water flow path can be interpreted as being substantially the same as the inner surface of the turn antenna. Specifically, the first surface S11 and the second surface S12 of the first cooling water flow path CFP_1 can be interpreted as the inner surface of the first turn antenna 3110, and the third surface S21 and the fourth surface S22 of the second cooling water flow path CFP_2 can be interpreted as the inner surface of the second turn antenna 3120. 【0247】 The antenna structure 1000 can absorb heat from the plasma generation unit 2000 through the inner diameter surface of the turn antenna that is in contact with the plasma generation unit 2000 and one surface of the corresponding cooling water channel. 【0248】 To improve cooling efficiency or to make heat conduction more active, the antenna structure 1000 can make surface contact with the plasma generation unit 2000. For example, referring again to Figure 15, the first inner diameter surface 3111 of the first turn antenna 3110 is formed parallel to the outer wall or central axis CA of the plasma generation unit 2000, and the first turn antenna 3110 can make surface contact with the plasma generation unit 2000 via the first inner diameter surface 3111. In this case, the first surface S11 of the first cooling water channel CFP_1 corresponding to the first inner diameter surface 3111 is parallel to the first inner diameter surface 3111 and the outer wall or central axis CA of the plasma generation unit 2000, and the antenna structure 1000 can absorb heat from the plasma generation unit 2000 via the first inner diameter surface 3111 and the first surface S11. 【0249】 The cross-section of the antenna structure 1000, which enhances the cooling efficiency for the plasma generation unit 2000, may be rectangular. For example, referring again to Figure 15, the cross-sections of the first to third turn antennas 3110, 3120, and 3130 are rectangular, and therefore the first to third inner diameter surfaces 3111, 3121, and 3131 may be parallel to the first to third outer diameter surfaces 3112, 3122, and 3132, respectively. In this case, the cross-section of the cooling water flow path may also be rectangular. 【0250】 Here, the first inner diameter surface 3111, the first surface S11, the second surface S12, and the first outer diameter surface 3112 may be parallel to each other. Therefore, the distance between the first inner diameter surface 3111 and the first surface S11 may be equal within a certain range from the horizontal axis HA, and the distance between the second surface S12 and the first outer diameter surface 3112 may also be equal within a certain range from the horizontal axis HA. 【0251】 Furthermore, the second inner diameter surface 3121 of the second turn antenna 3120 and the third surface S21 of the second cooling water channel CFP_2 may be parallel to the first outer diameter surface 3112 of the first turn antenna 3110 and the second surface S12 of the first cooling water channel CFP_1. Therefore, the distance between the second surface S12 and the third surface S21 may be equal within a certain range from the horizontal axis HA. 【0252】 On the other hand, if the cross-section of the antenna structure 1000 is rectangular, energy loss due to parasitic capacitance may occur between the turn antennas. For example, as shown in Figure 15, if the first outer diameter surface 3112 of the first turn antenna 3110 and the second inner diameter surface 3121 of the second turn antenna 3120 are parallel, energy loss due to parasitic capacitance may occur. 【0253】 The energy loss due to parasitic capacitance between turn antennas can be modified according to the inter-turn distance between the turn antennas. For example, in Figure 15, the effect of parasitic capacitance within the antenna structure 1000 can be modified according to the first inter-turn distance TD_1 between the first turn antenna 3110 and the second turn antenna 3120, and the second inter-turn distance TD_2 between the second turn antenna 3120 and the third turn antenna 3130. 【0254】 Therefore, the antenna structure 1000 can reduce the effect of parasitic capacitance by setting the inter-turn distance between turn antennas within a preset range. In this case, the preset range can be set considering the effect of parasitic capacitance and the total width of the antenna structure 1000. For example, the inter-turn distance may be set within a range of 0.5 mm to 3.5 mm. 【0255】 The distances between turns can all be the same or different. For example, the first turn distance TD_1 and the second turn distance TD_2 can have the same value within a predetermined range. In yet another example, the first turn distance TD_1 and the second turn distance TD_2 can have different lengths. For example, the first turn distance TD_1 can have a value greater than or less than the second turn distance TD_2. 【0256】 The above describes the structure and shape of the turn antenna having a square cross-section in relation to the antenna structure 1000 that performs the cooling function, and the antenna structure 1000 that reduces the effects of parasitic capacitance associated with it. 【0257】 The following describes other embodiments of the structure and shape of the antenna structure 1000 that reduce the effects of parasitic capacitance while performing a cooling function, with reference to Figures 16 to 19. 【0258】 Figure 16 shows an antenna structure 1000 having a square cross-section and a circular cross-section according to one embodiment of this specification. 【0259】 Figures 17 and 18 are diagrams relating to the cross-section A-A' of an antenna structure 1000 having at least two or more cross-sectional shapes according to one embodiment of this specification. 【0260】 Referring to Figures 16 and 17, the antenna structure 1000 may include turn antennas having different shapes. For example, the antenna structure 1000 may include a first turn antenna 3110 having a square cross-section, and second and third turn antennas 3120 and 3130 having circular cross-sections. 【0261】 In the following, unless otherwise specified, the same provisions regarding the antenna structure 1000 described earlier with reference to Figure 14 can be applied. 【0262】 The antenna structure 1000 may include a turn antenna that makes surface contact with the plasma generating unit 2000. For example, the antenna structure 1000 may include a first turn antenna 3110 that makes surface contact with the plasma generating unit 2000 via a first inner diameter surface 3111. 【0263】 The turn antennas within the antenna structure 1000 may have surfaces that are not parallel to each other in order to reduce the effect of parasitic capacitance between the turn antennas. For example, referring again to Figure 17, the first inner diameter surface 3111 and the first outer diameter surface 3112 of the first turn antenna 3110 are parallel to the outer wall of the plasma generation unit 2000, but the second inner diameter surface 3121 and the second outer diameter surface 3122 of the second turn antenna 3120 do not have to be parallel to the plasma generation unit 2000 and the first inner diameter surface 3111. 【0264】 The antenna structure 1000 may include turn antennas having different cross-sections to reduce the effect of parasitic capacitance between turn antennas. For example, referring again to Figure 17, the antenna structure 1000 may include a first turn antenna 3110 having a rectangular cross-section and a second turn antenna 3120 having a circular cross-section. In this case, corresponding to the first turn antenna 3110 and the second turn antenna 3120, the first cooling water channel CFP_1 may have a rectangular cross-section, and the second cooling water channel CFP_2 may have a circular cross-section. However, the cross-section of the turn antenna is not limited to a rectangular or circular shape, but may be a polygon, a circle, an ellipse, or a geometric shape consisting of curves and straight lines. 【0265】 As described above, if the antenna structure 1000 includes a turn antenna with planes that are not parallel to each other or have different cross-sections, the effect of parasitic capacitance may be reduced. 【0266】 Turn antennas with different cross-sections may have the same inter-turn distance, but the distance between the faces of the turn antennas does not have to be constant. For example, referring again to Figure 17, the first to third turn antennas 3110, 3120, and 3130 may be arranged such that the first inter-turn distance TD_1 and the second inter-turn distance TD_2 are equal with respect to the horizontal axis HA. Also, for example, referring again to Figure 17, the distance between the first outer diameter surface 3112 of the first turn antenna 3110 and the first inner diameter surface 3121 of the second turn antenna 3120 does not have to be constant. Specifically, in Figure 17, the further away from the horizontal axis HA in the direction parallel to the central axis CA or in the longitudinal direction of the plasma generation section 2000, the greater the distance between the first turn antenna 3110 and the second turn antenna 3120, which may reduce the effect of parasitic capacitance compared to when the distance is constant. Alternatively, if the first turn antenna 3110 and the second turn antenna 3120 are arranged on the same plane, the distance between the first turn antenna 3110 and the second turn antenna 3120 increases as they move away from each other in the direction parallel to the central axis CA with respect to the plane or in the longitudinal direction of the plasma generation unit 2000, and the effect of parasitic capacitance can be reduced compared to when the distance is constant. 【0267】 On the other hand, the antenna structure 1000 may include turn antennas with inner and outer diameter surfaces having different shapes in order to reduce the effect of parasitic capacitance between turn antennas. 【0268】 Referring to Figure 18, the first turn antenna 3110 in contact with the plasma generating unit 2000 may include a first inner diameter surface 3111 parallel to the outer wall of the plasma generating unit 2000 and a first outer diameter surface 3112 not parallel to the outer wall of the plasma generating unit 2000. Alternatively, the first turn antenna 3110 may include a first inner diameter surface 3111 parallel to the outer wall of the plasma generating unit 2000 and a first outer diameter surface 3112 curved along the longitudinal direction away from the central axis CA. In this case, the first turn antenna 3110 may have a cross-section consisting of straight lines and curves. Specifically, the first turn antenna 3110 may have a cross-section that is a combination of a square and a semicircle, or a semicircular or semielliptical shape. 【0269】 The antenna structure 1000, which includes a turn antenna having an inner diameter surface and an outer diameter surface or cross-section as described above, can efficiently cool the plasma generation unit 2000 while effectively reducing energy loss due to parasitic capacitance inside. 【0270】 The above description focused on an antenna structure 1000 consisting of a triple turn antenna, with regard to the structure and shape of the antenna structure 1000 that performs the cooling function. However, the technical ideas of this specification are not limited to this, and can be similarly applied to antenna structures 1000 having one or more turn antennas. Furthermore, they can be similarly applied to antenna structures 1000 having multiple layers, and it goes without saying that they can also be similarly applied to antenna structures 1000 having multiple antenna segments as described above. 【0271】 In the following section, the inter-turn connection section for connecting the turn antennas within the antenna structure 1000 will be described in detail with reference to Figures 16, 19 to 22. 【0272】 Figures 19 to 22 illustrate a method for connecting antennas having different cross-sections within an antenna structure according to one embodiment of this specification. 【0273】 An inter-turn connection can refer to a portion where different turn antennas are interconnected or a portion that connects different turn antennas. In the following, to describe an inter-turn connection that connects turn antennas having different cross-sections, we will focus on the first inter-turn connection 3210 shown in Figure 15 as a representative example, but the technical concepts of this specification are not limited to this. 【0274】 The first turn connection section 3210 can be formed to have a bend. For example, referring to Figures 16 and 19, the first turn antenna 3110 and the second turn antenna 3120 can be electrically or physically connected in a bent state. 【0275】 The first inter-turn connection 3210 may be formed linearly. For example, referring to Figures 20 and 21, the first turn antenna 3110 and the second turn antenna 3120 may be electrically or physically connected on the same straight line. 【0276】 The first inter-turn connector 3210 may include one end connected to the first turn antenna 3110 and the other end connected to the second turn antenna 3120. Here, the one end and the other end of the first inter-turn connector 3210 may have different cross-sections. Specifically, the cross-section of one end of the first inter-turn connector 3210 may be the cross-section of the first turn antenna 3110, and the cross-section of the other end of the first inter-turn connector 3210 may be the cross-section of the second turn antenna 3120. For example, the cross-section of one end of the first inter-turn connector 3210 may be rectangular, and the cross-section of the other end of the first inter-turn connector 3210 may be circular. 【0277】 The first inter-turn connection section 3210 can be formed by modifying the shape of at least one of the first turn antenna 3110 and the second turn antenna 3120 and connecting them. 【0278】 As an example, referring again to Figure 20, the first inter-turn connection 3210 can be formed by expanding or extending the end of the first turn antenna 3110 and connecting the second turn antenna 3120. 【0279】 Here, the cross-section of the first inter-turn connection 3210 can change in size and shape as it moves from one end to the other. For example, the cross-sectional area of the first inter-turn connection 3210 can gradually increase and then decrease as it moves from one end to the other. In yet another example, the cross-sectional area of the first inter-turn connection 3210 may change from a rectangular shape to a rectangular shape with rounded corners, and then to a circular shape as it moves from one end to the other. 【0280】 As another example, referring again to Figure 21, the first inter-turn connection 3210 may be formed by connecting the end of the second turn antenna 3120 to the end of the first turn antenna 3110, thereby expanding or extending the second turn antenna 3120. 【0281】 When the first turn antenna 3110 and the second turn antenna 3120 are connected, the cross-sections of the first turn antenna 3110 and the second turn antenna 3120 can be set to correspond to each other. For example, the width of the cross-section of the first turn antenna 3110 may be set to be the same as or different from the width of the cross-section of the second turn antenna 3120. Specifically, the width of the cross-section of the first turn antenna 3110 may be greater than the width of the second turn antenna 3120 so that the second turn antenna 3120 can be easily inserted into the first turn antenna 3110. Alternatively, the cross-sectional widths of the first turn antenna 3110 and the second turn antenna 3120 may be the same, but either turn antenna may be interconnected by expansion, widening, contraction, etc., as shown in Figures 20 and 21. The size of the cross-section of each turn antenna can be set considering the smooth flow of cooling water. 【0282】 The first inter-turn connector 3210 may be provided in a modular form. For example, referring to Figure 22, the first inter-turn connector 3210 may include an insertion portion sized to correspond to the cross-sectional size of the first turn antenna 3110 and the second turn antenna 3120, respectively. In this case, the first turn antenna 3110 and the second turn antenna 3120 are detachable from the first inter-turn connector 3210. Alternatively, the first inter-turn connector 3210 may electrically or physically connect the first turn antenna 3110 and the second turn antenna 3120, but can perform specific functions. Specifically, the first inter-turn connector 3210 may include a capacitive element. In this case, the first inter-turn connector 3210 can function as the inter-turn capacitive element described above. 【0283】 On the other hand, the shape of the cooling water flow path in the turn connection part can be deformed. For example, the cooling water flow path in the first turn connection part 3210 may gradually become narrower. As yet another example, the cooling water flow path in the first turn connection part 3210 may gradually become wider. As yet another example, the cooling water flow path in the first turn connection part 3210 may become wider first and then narrower. At this time, as the shape of the cooling water flow path changes, the flow velocity of the cooling water can be changed. 【0284】 Hereinafter, referring to FIG. 23, another method for efficiently cooling the heat generated in the plasma generation part 2000 by plasma induction will be described. 【0285】 FIG. 23 is a diagram showing a heat transfer member 300 according to an embodiment of the present specification. 【0286】 Referring to FIG. 23, the heat transfer member 300 can transfer heat between the antenna structure 1000 and the plasma generation part 2000. For example, the heat transfer member 300 can absorb the heat generated in the plasma generation part 2000 in response to plasma induction and provide it to the antenna structure 1000. 【0287】 The heat transfer member 300 can be composed of a substance having a high thermal conductivity. For example, the heat transfer member 300 can be made of at least one of aluminum, gold, silver, tungsten, and / or copper. 【0288】 The heat transfer member 300 can have various shapes. For example, the heat transfer member 300 can have a shape corresponding to the plasma generation unit 2000. Specifically, if the plasma generation unit 2000 has a hollow cylindrical shape, the heat transfer member 300 can also be configured as a hollow cylindrical shape. In another example, the heat transfer member 300 can have a shape for surface contact with the outer surface of the plasma generation unit 2000. Specifically, the heat transfer member 300 may be curved or flat in at least part. In yet another example, the heat transfer member 300 may be composed of multiple physically separated plates. On the other hand, the shape of the heat transfer member 300 is not limited to the shapes described above. The heat transfer member 300 may have any shape as long as it is capable of surface contact with the plasma generation unit 2000 or the antenna structure 1000, as will be described later. 【0289】 The heat transfer member 300 can be positioned between the antenna structure 1000 and the plasma generation unit 2000. For example, the heat transfer member 300 may be positioned to surround the plasma generation unit 2000, and the antenna structure 1000 may be positioned to surround the heat transfer member 300. Specifically, the heat transfer member 300 may be positioned to be in surface contact with the outer wall of the plasma generation unit 2000 and in surface contact with the innermost turn antenna (e.g., the first turn antenna 3110) of the antenna structure 1000 with respect to the central axis CA. 【0290】 As described above, the plasma generation unit 2000 and the antenna structure 1000 can be thermally coupled via the heat transfer member 300. In this case, since the heat transfer member 300 is made of a material with high thermal conductivity, the heat generated in the plasma generation unit 2000 in response to plasma induction can be transferred to the antenna structure 1000 more quickly via the heat transfer member 300, improving the plasma induction and maintenance efficiency and improving the durability of the plasma generation unit 2000. 【0291】 The above mainly describes the case where the antenna structure 1000 is composed of multiple turn antennas, but the technical ideas of this specification are not limited to this, and it goes without saying that they can also be applied to cases where the antenna structure 1000 is composed of a single turn antenna, a single turn antenna with multiple layers, or a multiple antenna segment. 【0292】 The methods according to the embodiments are implemented in the form of program instructions that can be executed via various computer means and can be recorded on a computer-readable medium. The computer-readable medium may include program instructions, data files, data structures, etc., individually or in combination. The program instructions recorded on the medium may be specifically designed and configured for the embodiments and may be known and usable by those skilled in the computer software art. Examples of computer-readable recording media include magnetic media such as hard disks, floppy disks, and magnetic tapes; optical media such as CD-ROMs and DVDs; magneto-optical media such as floptical disks; and hardware devices specifically configured to store and execute program instructions, such as ROMs, RAMs, and flash memory. Examples of program instructions include not only machine code, such as that produced by a compiler, but also high-level language code that can be executed by a computer using an interpreter or the like. The hardware devices described above may be configured to operate as one or more software modules to perform the operations of the embodiments, and vice versa. 【0293】 Although the embodiments have been described above with reference to limited embodiments and drawings, various modifications and variations can be made from the above description by those with ordinary skill in the relevant art. For example, the described technique may be performed in a different order than described, and / or the components of the described system, structure, apparatus, circuit, etc. may be combined or assembled in a different manner than described, and replaced or substituted by other components or equivalents, and the appropriate results may still be achieved. 【0294】 Therefore, other configurations, other embodiments, and those equivalent to the claims described below also fall within the scope of the claims.
Claims
[Claim 1] A discharge tube providing an internal space in which plasma is induced, An antenna structure arranged to surround the outer surface of the discharge tube, the antenna structure inducing the plasma into the internal space of the discharge tube in accordance with the AC power supplied to the antenna structure, Equipped with, The aforementioned antenna structure is An N-layer antenna is arranged on N virtual planes perpendicular to the virtual central axis of the discharge tube, with one antenna on each virtual plane, where N is a natural number of 2 or more. Among the N-layer antennas, at least one interlayer capacitor is electrically interposed between the M-th layer antenna and the (M+1)-th layer antenna, wherein M is a natural number and less than N. It has, Each of the aforementioned N-layer antennas is P antenna segments having a first radius of curvature, and Q antenna segments having a second radius of curvature greater than the first radius of curvature, wherein P and Q are natural numbers greater than or equal to 2, and P and Q are natural numbers greater than or equal to 2. At least one inter-turn capacitor is electrically interposed between the first antenna segment of the P antenna segments and the second antenna segment of the Q antenna segments. It has, The aforementioned at least one interlayer capacitor is Of the Q antenna segments of the M-th layer antenna, a third antenna segment different from the second antenna segment, Of the P antenna segments of the (M+1) layer antenna, a fourth antenna segment different from the first antenna segment, Electrically interposed between, Plasma induction device. [Claim 2] The central angles of each of the P antenna segments are the same, The aforementioned central angle is the angle between the first virtual line and the second virtual line. The first virtual line connects one end of each of the P antenna segments to the virtual center point of each of the N layer antennas. The second virtual line connects the other end of each of the P antenna segments to the virtual center point of each of the N layer antennas. The plasma induction device according to claim 1. [Claim 3] The central angle is 360 / P degrees. The plasma induction device according to claim 2. [Claim 4] Each of the at least one inter-turn capacitors has a fixed capacitance, Each of the aforementioned at least one interlayer capacitor has a fixed capacitance. The plasma induction device according to claim 1. [Claim 5] P is the same as Q, The plasma induction device according to claim 1. [Claim 6] An antenna structure having a shape that can be arranged to surround the outer surface of a discharge tube, and used to induce plasma in the internal space of the discharge tube in response to AC power supplied to the antenna structure, An N-layer antenna is arranged on N virtual planes perpendicular to the virtual central axis of the discharge tube, with one antenna on each virtual plane, where N is a natural number of 2 or more. Among the N-layer antennas, at least one interlayer capacitor is electrically interposed between the M-th layer antenna and the (M+1)-th layer antenna, wherein M is a natural number and less than N. Equipped with, Each of the aforementioned N-layer antennas is P antenna segments having a first radius of curvature, and Q antenna segments having a second radius of curvature greater than the first radius of curvature, wherein P and Q are natural numbers greater than or equal to 2, and P and Q are natural numbers greater than or equal to 2. At least one inter-turn capacitor is electrically interposed between the first antenna segment of the P antenna segments and the second antenna segment of the Q antenna segments. It has, The aforementioned at least one interlayer capacitor is Of the Q antenna segments of the M-th layer antenna, a third antenna segment different from the second antenna segment, Of the P antenna segments of the (M+1) layer antenna, a fourth antenna segment different from the first antenna segment, Electrically interposed between, Antenna structure. [Claim 7] The central angles of each of the P antenna segments are the same as those of the others. The aforementioned central angle is the angle between the first virtual line and the second virtual line. The first virtual line connects one end of each of the P antenna segments to the virtual center point of each of the N layer antennas. The second virtual line connects the other end of each of the P antenna segments to the virtual center point of each of the N layer antennas. The antenna structure according to claim 6. [Claim 8] The central angle is 360 / P degrees. The antenna structure according to claim 7. [Claim 9] Each of the at least one inter-turn capacitors has a fixed capacitance, Each of the aforementioned at least one interlayer capacitor has a fixed capacitance. The antenna structure according to claim 6. [Claim 10] P is the same as Q, The antenna structure according to claim 6.