Light-emitting device

Abstract

To provide a display device with good display quality. [Solution] In a display device having multiple display areas with different normal directions, each of the displays Depending on the display area, the arrangement direction of the multiple subpixels that make up a pixel is changed.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a product, a method, or a method of manufacture. Or, one aspect of the present invention relates to, Process, machine, manufacture, or composition of matter ) relating to. In particular, one aspect of the present invention relates to a light-emitting device, a display device, an electronic device, a lighting device, and This relates to their manufacturing methods, usage methods, and operating methods. In particular, electroluminescence Light emission utilizing the electroluminescence (EL) phenomenon. Devices, display devices, electronic devices, lighting devices, or methods for manufacturing, using, or operating them. Regarding which.

[0002] In this specification, a semiconductor device refers to a device that can function by utilizing semiconductor properties. This refers to the whole. Transistors and semiconductor circuits can be called semiconductor devices. Memory devices, imaging devices, displays Display devices, light-emitting devices, electro-optical devices, and electronic devices may have semiconductor devices. be. [Background technology]

[0003] In recent years, light-emitting devices and display devices are expected to have applications in a variety of uses, and diversification is required. Yes, they are.

[0004] For example, light-emitting devices and display devices for portable devices and the like require to be thin and lightweight. The material is required to be applicable to curved surfaces and to be resistant to breakage.

[0005] Furthermore, light-emitting elements (also written as EL elements) that utilize the EL phenomenon are easy to make thin and light, and input signals It has features such as being able to respond quickly to signals and being able to be driven using a DC low-voltage power supply, and is a light-emitting device. Applications in display devices are being considered.

[0006] For example, Patent Document 1 describes a film substrate on which a switching element such as a transistor or organic A flexible active-matrix display device equipped with an EL element is disclosed. [Prior art documents] [Patent Documents]

[0007] [Patent Document 1] Japanese Patent Publication No. 2003-174153 [Overview of the Initiative] [Problems that the invention aims to solve]

[0008] The display device 900 shown in Figure 19(A) has a display area 131 that faces the observer and an area 160 that faces the observer. The display area 131 has an area 170 that does not directly face the observer. Figures 19(B) and 19 (C) is a cross-sectional view of the area Q1-Q2 shown by the dashed line in Figure 19(A). Figure B) shows the state in which region 170 is bent, and Figure 19(C) shows the state in which region 170 is curved. This shows the curved state. Figures 19(B) and 19(C) show the area Q1-Q2. The direction of the normal near the center of region 160 is shown as normal 168, and the direction of the normal near the center of region 170 The direction of the normal is shown as normal 178. In either case of Figure 19(B) or Figure 19(C) However, the direction of the normal vector near the center of region 160 is different from the direction of the normal vector near the center of region 170. It is.

[0009] Furthermore, the display device 900 has substrates 111 and 121, and substrates 111 and 1 Between 21, there is a light-emitting element and a colored layer (not shown). Figure 19(D) shows region 16 It is a diagram in which a part 161, which is a part of the display area 131 in 0, is enlarged. Also, FIG. 19(E) is a diagram in which a part 171, which is a part of the display area 131 in the area 170, is enlarged.

[0010] The display area 131 has a plurality of pixels arranged in a matrix. One pixel has at least three sub-pixels. The three sub-pixels are arranged in a stripe pattern and emit red light, green light, and blue light respectively. In FIG. 19(D), the pixel in the area 160 is shown as pixel 165, and the sub-pixel that emits red light is shown as sub-pixel 165R, the sub-pixel that emits green light is shown as sub-pixel 16 5G, and the sub-pixel that emits blue light is shown as sub-pixel 165B. In FIG. 19(E), the pixel in the area 170 is shown as pixel 175, and the sub-pixel that emits red light is shown as sub-pixel 175R, the sub-pixel that emits green light is shown as sub-pixel 175G, and the sub-pixel that emits blue light is shown as sub-pixel 175B .

[0011] Next, the state when the observer 910 views the video displayed in the area 160 will be described . FIG. 20(A) is a diagram for explaining the relationship between the observer 910 and the light 235 emitted from the pixel 165 . Also, FIG. 20(A) is a schematic cross-sectional view of the pixel 165.

[0012] The sub-pixel 165R has a light-emitting element 125 and a coloring layer 266R. The sub-pixel 165G has a light-emitting element 125 and a coloring layer 266G. The sub-pixel 165B has a light-emitting element 125 and a coloring layer 26 6B. The light 235 emitted from the light-emitting element 125 is colored when passing through the coloring layer .

[0013] For example, in the sub-pixel 165G, the light emitted from the light-emitting element 125 that the sub-pixel 165G has The white light 235 is converted to green light 235 by the colored layer 266G and directed to the observer 910. It reaches. Furthermore, a portion of the white light 235 emitted from the light-emitting element 125 is directed towards other subpixels. It may be incident on the colored layer and converted to an unintended color. However, in region 160 Because the observer 910 and the display area 131 are directly facing each other, the light 235 that has been converted to an unintended color It is difficult for observer 910 to recognize.

[0014] Next, we will describe the state when observer 910 views the image displayed in area 170. Figure 20(B) shows the relationship between the observer 910 and the light 235 emitted from pixel 175. This is an explanatory diagram. Figure 20(B) is a schematic cross-sectional view of pixel 175.

[0015] Sub-pixel 175R has a light-emitting element 125 and a colored layer 266R. Sub-pixel 175G emits light It has an element 125 and a colored layer 266G. The sub-pixel 175B has an element 125 and a colored layer 26 It has 6B. The light 235 emitted from the light-emitting element 125 is colored when it passes through the colored layer. It can be done.

[0016] In region 170, the observer 910 and the display region 131 are not directly facing each other. Therefore, the observer 910 Of the light 235 emitted from the light-emitting element 125, the light that enters the colored layer of other subpixels is intended to... We end up observing some of the light 235 that has been converted to a color that doesn't exist.

[0017] Thus, in a display device having a display area that faces the observer directly and an area that does not face the observer, This can lead to greater variation in display quality within the display area, resulting in a decrease in overall display quality.

[0018] One aspect of the present invention aims to provide a display device or electronic device with excellent visibility. Let it be one.

[0019] Alternatively, one aspect of the present invention provides a display device or electronic device with good display quality. One of its objectives is to achieve this.

[0020] Alternatively, one aspect of the present invention provides a highly reliable display device or electronic device. This is one of the objectives.

[0021] Alternatively, one aspect of the present invention provides a display device or electronic device that is less prone to damage. This is one of the objectives.

[0022] Alternatively, one aspect of the invention provides a display device or electronic device with low power consumption. This is one of the objectives.

[0023] Alternatively, one aspect of the present invention aims to provide a novel display device or electronic device. Let it be one.

[0024] Furthermore, the description of these problems does not preclude the existence of other problems. The approach does not need to solve all of these problems. This will become clear from the description in the specification, drawings, claims, etc., and the specification, drawings It is possible to extract other issues from the descriptions in the surfaces, claims, etc. [Means for solving the problem]

[0025] One aspect of the present invention has a display area including a first area and a second area, and the display area is multiple It has a number of pixels, each pixel has multiple subpixels, and the arrangement direction of the subpixels in the first region is, This display device is characterized by having a different arrangement direction for sub-pixels in the second region.

[0026] Alternatively, one aspect of the present invention comprises a first display region having pixels and a second display region The first display area has a surface that is inclined relative to the surface of the second display area, and Each element has multiple subpixels, and the arrangement direction of the subpixels in the first display area and the second display area This display device is characterized by having different arrangement directions for sub-pixels.

[0027] Alternatively, one aspect of the present invention has a display area including a first area and a second area, The direction of the normal vector near the center of the first region is different from the direction of the normal vector near the center of the second region. The display area has multiple pixels, and each pixel has multiple subpixels, and the subpixels in the first area A display characterized by the fact that the arrangement direction of the pixels and the arrangement direction of the sub-pixels in the second region are different. It is a device.

[0028] Alternatively, one aspect of the present invention comprises a first display region having pixels and a second display region The pixels have a first sub-pixel and a second sub-pixel, and in the first display area The first subpixel and the second subpixel are arranged in the first direction, and in the second display area, the first The subpixel and the second subpixel are arranged in the second direction, and the first direction is different from the second direction. It is a distinctive display device. [Effects of the Invention]

[0029] According to one aspect of the present invention, it is possible to provide a display device or electronic device with excellent visibility. can.

[0030] Alternatively, according to one aspect of the present invention, a display device or electronic device with good display quality is provided. It is possible.

[0031] Alternatively, according to one aspect of the present invention, a highly reliable display device or electronic device is provided. It is possible.

[0032] Alternatively, according to one aspect of the present invention, a display device or electronic device that is less prone to damage is provided. It is possible.

[0033] Alternatively, according to one aspect of the present invention, a display device or electronic device with low power consumption is provided. It is possible.

[0034] Alternatively, according to one aspect of the present invention, a novel display device or electronic device can be provided. Yes, it is possible. Note that the descriptions of these effects do not preclude the existence of other effects. One aspect of the invention does not necessarily have to have all of these effects. The effects will become clear from the description in the specification, drawings, claims, etc. It is possible to extract effects other than those mentioned above from descriptions in documents, drawings, claims, etc. [Brief explanation of the drawing]

[0035] [Figure 1] A diagram illustrating one form of display device. [Figure 2] A diagram illustrating one form of display device. [Figure 3] A diagram illustrating one form of display device. [Figure 4] A block diagram and circuit diagram illustrating one form of a display device. [Figure 5] A diagram illustrating an example of pixel configuration. [Figure 6] A cross-sectional diagram illustrating an example of pixel configuration. [Figure 7] A cross-sectional diagram illustrating an example of pixel configuration. [Figure 8] A cross-sectional diagram illustrating an example of pixel configuration. [Figure 9] A cross-sectional view illustrating an example of a method for manufacturing a display device. [Figure 10] A cross-sectional view illustrating an example of a method for manufacturing a display device. [Figure 11] A cross-sectional view illustrating an example of a method for manufacturing a display device. [Figure 12] A cross-sectional view illustrating an example of a method for manufacturing a display device. [Figure 13] A cross-sectional view illustrating an example of a method for manufacturing a display device. [Figure 14] A cross-sectional view illustrating an example of a method for manufacturing a display device. [Figure 15] A cross-sectional view illustrating an example of a method for manufacturing a display device. [Figure 16] A diagram illustrating one form of display device. [Figure 17] A diagram illustrating an example of a light-emitting element configuration. [Figure 18] A diagram illustrating an example of the planar shape and arrangement of pixels. [Figure 19] A diagram illustrating the problem. [Figure 20] A diagram illustrating the problem. [Figure 21] A diagram illustrating one form of display device. [Figure 22] A diagram illustrating one form of display device. [Figure 23] A diagram illustrating an example of an electronic device. [Figure 24] A diagram illustrating one form of display device. [Figure 25] A diagram illustrating one form of display device. [Modes for carrying out the invention]

[0036] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be changed in various ways. Those skilled in the art will readily understand that further modifications are possible. Therefore, the present invention can be implemented in the following forms. The interpretation is not limited to the description of the state. Furthermore, the structure of the invention described below... Furthermore, the same reference numeral is used in common across different drawings for parts that are identical or have similar functions. I will omit the explanation of that repetition.

[0037] In the figures described herein, the size, layer thickness, or area of ​​each component is as follows: Details may be exaggerated or omitted to clarify the meaning. Therefore, the scale may not necessarily reflect the actual situation. It is not limited to the rule. In particular, in top views and perspective views, some parts are used to make the drawings easier to understand. The description of the constituent elements may be omitted in some cases.

[0038] Furthermore, the position, size, and scope of each component shown in the drawings, etc., are intended to facilitate understanding of the invention. Therefore, it may not represent the actual location, size, or range. For this reason, disclosure is required. The invention is not necessarily limited to the location, size, scope, etc. disclosed in the drawings, etc. For example. In the actual manufacturing process, the resist mask may be unintentionally damaged by processes such as etching. While this may result in a reduction in value, it is sometimes omitted for the sake of easier understanding.

[0039] Furthermore, in this specification, ordinal numbers such as "the first," "the second," etc., are used to avoid confusion of constituent elements. This is for visual inspection only and does not indicate any order or ranking, such as process order or layering order. Furthermore, even if an ordinal number is not attached to a term in this specification, the confusion of its constituent elements may occur. To avoid this, ordinal numbers may be added to the claims.

[0040] Furthermore, in this specification, the terms "electrode" and "wiring" do not limit the functionality of these components. It is not fixed. For example, "electrode" can be used as part of "wiring". The reverse is also true. Furthermore, the terms "electrode" and "wiring" can refer to multiple "electrodes" and "wiring". This also includes cases where the "lines" are formed as a single unit.

[0041] In this specification, the terms "above" and "below" refer to the relative positions of the constituent elements, specifically whether they are directly above or below. It is not limited to being below and in direct contact. For example, "electrode on insulating layer A" If the expression is "B", then it is not necessary for electrode B to be formed in direct contact with insulating layer A. Cases containing other components between marginal layer A and electrode B are not excluded.

[0042] Furthermore, the source and drain functions may differ when using transistors with different polarities, or when rotating In circuit operation, the direction of the current changes, and depending on the operating conditions, they can be swapped. Therefore, it is difficult to determine which is the source and which is the drain. In this specification, the terms source and drain may be used interchangeably. Let's assume that.

[0043] Furthermore, in this specification, "electrically connected" means "having some kind of electrical effect." This includes cases where the connection is made via ". Here, "something that has some electrical effect" The term "connection" is not particularly limited as long as it enables the exchange of electrical signals between connected objects. Therefore, even when expressed as "electrically connected," in actual circuits, In some cases, there is no logical connection point, and the wiring simply extends without any apparent purpose.

[0044] Furthermore, in this specification, "parallel" means that two straight lines are at an angle of -10° or more and 10° or less. This refers to the state in which something is positioned. Therefore, it also includes cases where the angle is between -5° and 5°. "Right" and "orthogonal" refer to two straight lines that are positioned at an angle of 80° to 100°. It refers to a state or condition. Therefore, it also includes cases where the angle is between 85° and 95°.

[0045] Furthermore, in this specification, when an etching process is performed after a photolithography process, Unless otherwise specified, the resist mask formed in the photolithography process is It shall be removed after the finishing process is complete.

[0046] (Embodiment 1) The display device 100 shown in Figure 1(A) has a display area 131 that faces the observer directly, and The display area 131 has an area 170 that does not directly face the observer. Also, the drive circuit 132a, It has a motion circuit 132b and a drive circuit 133. Figures 1(B) and 1(C) are shown in Figure 1 (A) is a cross-sectional view of area A1-A2, indicated by a dashed line. Figure 1(B) shows region 170 This shows a bent state, and Figure 1(C) shows a curved state in region 170. Figures 1(B) and 1(C) show the area near the center of region 160 in area A1-A2. The direction of the normal vector is shown as normal vector 168, and the direction of the normal vector near the center of region 170 is shown as normal vector 178. This is shown as follows. In both Figure 1(B) and Figure 1(C), the area near the center of region 160. The direction of the normal vector at this point is different from the direction of the normal vector near the center of region 170.

[0047] Furthermore, the display device 100 has substrates 111 and 121, and substrates 111 and 1 Between 21, there is a light-emitting element and a colored layer (not shown). Figure 1(D) shows region 160 This is a magnified view of part 161, which is a portion of the display area 131 inside. Also, Figure 1(E) is This is an enlarged view of part 171, which is a portion of the display area 131 within area 170. Also, Figure 1 (F) is an enlarged view of region 181, which is the boundary between region 160 and region 170.

[0048] The display area 131 has multiple pixels arranged in a matrix. Each pixel has a small number of pixels. It has at least three subpixels. These subpixels are arranged in a stripe pattern, and each one is red It emits colored light, green light, and blue light.

[0049] Figure 1 shows the case where the planar shape of the subpixel is rectangular. In this specification, etc., The arrangement in which these subpixels are arranged horizontally so that their longer sides are adjacent is called an "H-arrangement," and these An arrangement in which subpixels are arranged vertically so that their longer sides are adjacent is called a "V arrangement". In other words, an H arrangement The arrangement direction of the column and the arrangement direction of the V array are different. In this embodiment, the arrangement direction of the H array is The example shows the case where direction 166 and the arrangement direction 176 of the V-arrangement are orthogonal, but is not limited to this case.

[0050] In Figure 1(D), a pixel in region 160 is shown as pixel 165, and it is a subpixel that emits red light. The sub-pixel 165R emits green light, the sub-pixel 165G emits blue light, and the sub-pixel 165G emits blue light. It is shown as pixel 165B. Pixel 165 has an H-arrangement of three subpixels. ru.

[0051] In Figure 1(E), the pixels in region 170 are shown as pixel 175, and these are subpixels that emit red light. The sub-pixel 175R emits green light, the sub-pixel 175G emits blue light, and the sub-pixel 175G emits blue light. It is shown as pixel 175B. Pixel 175 has a V-arrangement of three subpixels. ru.

[0052] The color of light emitted by the subpixels may be other than red, green, and blue, such as yellow, cyan, and magenta. Furthermore, these lights may be used in combination. For example, one pixel may have four subpixels. It is also possible to provide a configuration in which each emits red, green, blue, and yellow light. This improves the reproduction of midtones in particular. Therefore, it enhances the display quality of the display device. It is possible to do so. Also, as shown in Figures 24(A), 24(B), and 24(C), one It is also possible to configure each pixel to have four sub-pixels, each emitting red, green, blue, and white light. By providing sub-pixels that emit white light, the brightness of the display area can be increased. Depending on the application of the display device, one pixel may be composed of two sub-pixels.

[0053] In Figure 24(A), a pixel in region 160 is shown as pixel 165, and is a sub-image that emits red light. The sub-pixel 165R emits green light, the sub-pixel 165G emits blue light, and the sub-pixel 165G emits blue light. Sub-pixel 165B is shown, and sub-pixel 165W is shown as sub-pixel 165, which emits white light. In this case, the arrangement of the four subpixels is an H-array.

[0054] In Figure 24(B), the pixels in region 170 are shown as pixel 175, and the sub-image emits red light. The sub-pixel 175R emits green light, the sub-pixel 175G emits blue light, and the sub-pixel 175G emits blue light. Sub-pixel 175B is shown, and sub-pixel 175W is shown as sub-pixel 175, which emits white light. In this case, the arrangement of the four subpixels forms a V-array.

[0055] Furthermore, the occupied area and shape of each subpixel may be the same or different. It is also acceptable to use a different arrangement method than stripe arrangement. For example, delta You can also apply arrays, Bayer arrays, PenTile arrays, etc. As an example, PenTile Examples of applying the Ill sequence are shown in Figures 25(A), 25(B), and 25(C).

[0056] Next, regarding the effect obtained by making the sub-pixel arrangement of pixel 175 a V-arrangement, see Figure I will explain using example 2.

[0057] Figure 2(A) shows the observer 910 and the region 160 of light 235 emitted from pixel 165. This is a diagram illustrating the relationship. Also, Figure 2(A) shows pixels 165 arranged in the array direction 166. This is a schematic cross-sectional view from a perpendicular direction.

[0058] In region 160, the observer 910 and the display region 131 are directly facing each other, so pixel 165 is also the observer 91 It is directly opposite to 0. Therefore, the light emitted from the light-emitting element of the subpixel is the same as the light emitted from the subpixel. It is transformed by the colored layer and reaches observer 910. For example, in subpixel 165G, The white light 235 emitted from the light-emitting element 125 of the sub-pixel 165G is directed to the colored layer 266 G converts it into green light 235 and reaches the observer 910. A portion of the white light 235 emitted from is scattered and incident on the colored layer of other subpixels, unintended It may be converted to a different color. However, in area 160, observer 910 and display area 1 Because 31 is directly facing the observer, the light 235, which has been converted to an unintended color due to scattering, reaches the observer 910. It's difficult to recognize.

[0059] Figure 2(B) shows the observer 910 and the region 170 of light 235 emitted from pixel 175. This is a diagram explaining the relationship. Also, Figure 2(B) shows the arrangement of pixels 175 in the 176 direction. This is a schematic cross-sectional view.

[0060] In region 170, the observer 910 and the display region 131 are not directly facing each other. Therefore, the observer 910 Of the light 235 emitted from the light-emitting element 125, the light incident on the coloring layer of other subpixels is converted. Observe some of the light 235 that has been emitted. However, the display device 100 illustrated in this embodiment Because the sub-pixel array of pixel 175 is the V array, it reaches observer 910. Light 235, which is incident on the coloring layer of other subpixels and converted, is also substantially the same color as originally intended. It will be converted.

[0061] By making the sub-pixel arrangement of pixel 175 a V-arrangement, the display quality of the display device 100 can be improved. This reduces glare. Therefore, it is possible to realize a display device with excellent visibility. Furthermore, it is possible to realize a display device with good display quality.

[0062] In this embodiment, the right or left side of the display area 131 of the display device 100 is While the case of bending or curving has been described, one aspect of the present invention is not limited thereto. For example, if the upper or lower part of the display area 131 is bent or curved, or if the display area 131 Even if the corners are bent or curved, the display can be displayed by appropriately setting the arrangement of subpixels. This makes it possible to create a display device with good quality.

[0063] Although an example was shown where the light-emitting element 125 emits white light 235, the present invention is not limited to this example. The form is not limited to this. The light-emitting element 125 is red (R), blue (B), green (G ) may emit light in any one of the following colors. In that case, the light-emitting element 125 may emit light for each subpixel, It is preferable that the light emits different colors.

[0064] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0065] (Embodiment 2) In this embodiment, an example of the configuration of the display device 100 will be described with reference to Figure 3. Figure 3 is Figure 1(A) is a schematic cross-sectional view of the area X1-X2, indicated by the dashed line.

[0066] <Display device configuration> The display device 100 illustrated in this specification comprises a first electrode 115, an EL layer 117, and a second electrode 1 It has a light-emitting element 125 including 18 and terminal electrodes 216. The light-emitting element 125 has a display area 1 Multiple are formed in 31. In addition, each light-emitting element 125 has a light-emitting element 125 with a light-emitting element 125 A control transistor 232 is connected to it.

[0067] The terminal electrode 216 is connected to the external electrode 1 via the anisotropic conductive connecting layer 123 provided in the opening 122. It is electrically connected to 24. Also, the terminal electrode 216 is connected to the drive circuit 132a, drive circuit It is electrically connected to 132b and the drive circuit 133.

[0068] The drive circuits 132a, 132b, and 133 each use multiple transistors 2 It consists of 52 drive circuits 132a, 132b, and 13 3 receives the signal from the external electrode 124 and directs it to any of the light-emitting elements 125 in the display area 131. It has the function of deciding whether or not to supply.

[0069] The display device 100 illustrated herein has a substrate 111 and a substrate 121 connected via an adhesive layer 120. It has a bonded structure. The substrate 111 has an insulating layer 205 formed via an adhesive layer 112. It is done. The insulating layer 205 is silicon oxide, silicon nitride, silicon oxide nitride, nitride Silicon oxide, aluminum oxide, aluminum oxide nitride, or aluminum nitride oxide It is preferable to form these in a single or multilayer form. The insulating layer 205 is formed by sputtering or C It can be formed using methods such as VD (Voltage Discharge) method, thermal oxidation method, coating method, and printing method.

[0070] Furthermore, an insulating layer 145 is formed on the substrate 121 via an adhesive layer 142, and the insulating layer 145 A light-shielding layer 264 is formed via this layer. In addition, the substrate 121 is attached via an insulating layer 145. A color layer 266 and an overcoat layer 268 are formed.

[0071] Furthermore, the insulating layer 205 functions as a base layer, and transmits signals from the substrate 111 and adhesive layer 112. This can prevent or reduce the diffusion of moisture and impurity elements into the zista and light-emitting elements. Furthermore, the insulating layer 145 functions as a base layer, and transients are created from the substrate 121 and adhesive layer 142. This prevents or reduces the diffusion of moisture and impurity elements to the star and light-emitting elements. Layer 145 can be formed using the same materials and methods as the insulating layer 205.

[0072] The substrates 111 and 121 are made of organic resin material or glass of a thickness that is flexible. Materials such as stainless steel can be used. The display device 100 has a so-called bottom emission structure (bottom surface If the display device is an injection-molded (injection-molded) or double-sided injection-molded (double-sided injection-molded) display device, the substrate 111 will have an EL (electroluminescent) element. A material that is transparent to light emitted from layer 117 is used. Also, the display device 100 is placed on the top surface In the case of an injection-type display device or a double-sided injection-type display device, the substrate 121 has an EL layer 1 A material that is transparent to light emitted from 17 is used.

[0073] Flexible and translucent to visible light can be used in substrates 121 and 111. Materials having this include polyethylene terephthalate resin and polyethylene naphthalate resin. Fat, polyacrylonitrile resin, polyimide resin, polymethyl methacrylate resin, poly Carbonate resin, polyethersulfone resin, polyamide resin, cycloolefin resin These include lipids, polystyrene resin, polyamide-imide resin, polyvinyl chloride resin, etc. If light transmission is not required, an opaque substrate may be used. For example, substrate 1 21 or substrate 111 can be a stainless steel substrate, a stainless steel foil substrate, etc. That's fine.

[0074] Furthermore, the thermal expansion coefficients of substrate 121 and substrate 111 are preferably 30 ppm / K or less. Furthermore, it is preferable to have a concentration of 10 ppm / K or less. Also, on the surface of substrate 121 and substrate 111 , pre-processed with films containing nitrogen and silicon, such as silicon nitride and silicon oxide nitride, and aluminum nitride, etc. A protective film with low water permeability, such as a film containing nitrogen and aluminum, may be deposited. , Substrates 121 and 111 are structures in which organic resin is impregnated into a fibrous material (so-called p You may also use a repreg (also known as a repreg).

[0075] By using such a substrate, it is possible to provide a display device that is less prone to cracking. This can provide a lightweight display device, or a flexible display device. It is possible.

[0076] Furthermore, on the insulating layer 205, transistors 232, 252, and terminal electrodes 216 are placed. Wiring 219 is formed. In this embodiment, transistor 232 and tra As transistor 252, it is a channel-etched type, which is a bottom-gate type transistor. While transistors are used as examples, channel-protected transistors and top-gate transistors are also used. It is also possible to use a transistor, etc. Furthermore, two semiconductor layers in which the channel is formed are... It is also possible to use a dual-gate transistor with a structure where the gate electrode is sandwiched between the other gates.

[0077] Transistors 232 and 252 may have similar structures. However, The size of each transistor (e.g., channel length and channel width) is determined by the size of each transistor. It can be adjusted as needed.

[0078] Transistors 232 and 252 have a gate electrode 206 and a gate insulating layer 20 7. It has a semiconductor layer 208, a source electrode 209a, and a drain electrode 209b.

[0079] Terminal electrode 216, wiring 219, gate electrode 206, source electrode 209a, and drain Electrode 209b can be formed using the same materials and methods as terminal electrode 216. Furthermore, the gate insulating layer 207 is formed using the same materials and methods as the insulating layer 205. It is possible.

[0080] The semiconductor layer 208 is formed using amorphous semiconductors, microcrystalline semiconductors, polycrystalline semiconductors, etc. This is possible. For example, amorphous silicon or microcrystalline germanium can be used. Compound semiconductors such as silicon carbide, gallium arsenide, oxide semiconductors, and nitride semiconductors, Organic semiconductors and the like can be used.

[0081] Furthermore, oxide semiconductors have a large energy gap of 2.8 eV or more, and are sensitive to visible light. It has high transmittance. Also, transistors obtained by processing oxide semiconductors under appropriate conditions In this case, the off-current under the operating temperature conditions (e.g., 25°C) is 100 Hz (1 × 10 -19 A) Less than or equal to 10zA(1×10 -20 A) Below, and furthermore, 1zA(1 ×10 -21 A) The following is possible. Therefore, a display device with low power consumption is provided. It is possible.

[0082] Furthermore, when an oxide semiconductor is used for the semiconductor layer 208, the insulating layer in contact with the semiconductor layer 208 is It is preferable to use an insulating layer containing oxygen.

[0083] Furthermore, an insulating layer 210 is formed on transistors 232 and 252, providing insulation. An insulating layer 211 is formed on layer 210. The insulating layer 210 functions as a protective insulating layer. Impurities from the layers above the insulating layer 210 to transistors 232 and 252 The diffusion of material elements can be prevented or reduced. The insulating layer 210 is the insulating layer 20 It can be formed using the same materials and methods as in 5.

[0084] Furthermore, in order to reduce surface irregularities on the surface of the light-emitting element 125, the insulating layer 211 is subjected to a planarization treatment. Planarization treatments are not particularly limited, but include polishing treatments (e.g., chemical polishing). Chemical Mechanical Polishing (CMP) This can be done by ), or by dry etching.

[0085] Furthermore, by forming the insulating layer 211 using an insulating material with a planarization function, the polishing process is eliminated. This can also be omitted. Examples of insulating materials with planarization properties include polyimide resin. Organic materials such as acrylic resin can be used. In addition to the above organic materials, low dielectric constant materials can also be used. Materials (low-k materials), etc., can be used. Furthermore, the insulating layer formed from these materials... Multiple layers may be stacked to form an insulating layer 211.

[0086] Furthermore, on the insulating layer 211, there are light-emitting elements 125 and partition walls 1 for separating each light-emitting element 125. 14 is formed.

[0087] The display device 100 uses a colored layer 266 to transmit light 235 emitted from the light-emitting element 125 to the base This is a display device with a so-called top-emission structure (top-surface injection structure) that ejects from the plate 121 side. ru.

[0088] Furthermore, the light-emitting element 125 has openings in the insulating layer 211 and the insulating layer 210, It is electrically connected to the 232.

[0089] Furthermore, since the substrate 121 is formed to face the substrate 111, the substrate 121 is "facing It is sometimes called a "circuit board".

[0090] Furthermore, as shown in Figure 21(A), a touch sensor may be provided on the substrate 121. As shown above, by providing it on the substrate 121, the misalignment when bent can be reduced. It comes. The touch sensor is constructed using conductive layer 991 and conductive layer 993, etc. An insulating layer 992 is provided between them.

[0091] Furthermore, the conductive layer 991 and / or conductive layer 993 are made of indium tin oxide or indium phosphate. It is desirable to use a transparent conductive film such as lead oxide. However, in order to reduce resistance, the conductive layer 991 and / or a portion or all of the conductive layer 993 is made of a low-resistance material. It may be present. For example, aluminum, titanium, chromium, nickel, copper, yttrium, and A single metal consisting of tulconium, molybdenum, silver, tantalum, or tungsten, or An alloy with this as its main component can be used as a single-layer or multi-layer structure. Alternatively, Metal nanowires may be used as the conductive layer 991 and / or the conductive layer 993. In this case, silver is a suitable metal. This allows the resistance value to be lowered. Therefore, the sensitivity of the sensor can be improved.

[0092] The insulating layer 992 consists of silicon oxide, silicon nitride, silicon oxide nitride, silicon nitride oxide, Aluminum oxide, aluminum oxide nitride, or aluminum nitride oxide, etc., in a single layer or It is preferable to form it in multiple layers. The insulating layer 992 can be formed by sputtering, CVD, or thermal oxidation. It can be formed using methods such as coating, printing, etc.

[0093] Note that the touch sensor may be constructed using a different circuit board instead of circuit board 121. Figure 21 (B) shows an example of a configuration using circuit board 994. Note that the touch sensor is on the circuit board. Although provided above 994, one embodiment of the present invention is not limited thereto. It may be provided below the plate 994 (between the substrate 121 and the substrate 994). In that case, the base The plate 994 may be made of tempered glass to protect the display device from scratches and other damage.

[0094] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0095] (Embodiment 3) In this embodiment, a more specific configuration example of the display device 100 will be explained using Figure 4. Figure 4(A) is a block diagram illustrating the configuration of the display device 100. 100 is the display area 131, the drive circuit 132a, the drive circuit 132b, and the drive circuit 13 It has 3. The drive circuits 132a and 132b function, for example, as scan line drive circuits. The drive circuit 133 also functions as, for example, a signal line drive circuit. 132a and the drive circuit 132b may be either one or the other.

[0096] Furthermore, the display devices 100 are arranged substantially parallel to each other, and the drive circuit 132a and / Alternatively, m wires 135 whose potential is controlled by the drive circuit 132b, and each of them approximately parallel It has n wires 136 which are arranged and whose potential is controlled by a drive circuit 133. Furthermore, the display area 131 has a plurality of pixel circuits 134 arranged in a matrix. Furthermore, one sub-pixel is driven by one pixel circuit 134. Sometimes, components 2a, drive circuit 132b, and drive circuit 133 are collectively referred to as the drive circuit section. .

[0097] Each wiring 135 is among the pixel circuits 134 arranged in m rows and n columns in the display area 131, It is electrically connected to n pixel circuits 134 arranged in any row. Also, each wiring 1 36 is m of the pixel circuits 134 arranged in m rows and n columns, with m of them located in any of the columns. It is electrically connected to the pixel circuit 134. m and n are both integers greater than or equal to 1.

[0098] Figures 4(B) and 4(C) are used in the pixel circuit 134 of the display device shown in Figure 4(A). This shows an example of a circuit configuration that can achieve this.

[0099] [An example of a pixel circuit for a light-emitting display device] Furthermore, the pixel circuit 134 shown in Figure 4(B) includes a transistor 431 and a capacitive element 233, It has a transistor 232, a transistor 434, and a light-emitting element 125.

[0100] One of the source and drain electrodes of transistor 431 is supplied with a data signal. It is electrically connected to the wiring (hereinafter referred to as signal line DL_n). Furthermore, transistor 43 The gate electrode of 1 supplies electrical signals to the wiring to which the gate signal is supplied (hereinafter referred to as scan line GL_m). It connects to the target.

[0101] Transistor 431 is either on or off, which affects the node of the data signal. It has a function to control writing to 435.

[0102] One of the pair of electrodes of the capacitive element 233 is electrically connected to node 435, and the other is connected to node 435. It is electrically connected to the source electrode and drain of transistor 431. The other end of the electrode is electrically connected to node 435.

[0103] Capacitive element 233 functions as a holding capacitor to hold the data written to node 435. It has.

[0104] One of the source and drain electrodes of transistor 232 is connected to the potential supply line VL_a. One end is electrically connected to node 437, and the other end is electrically connected to node 437. Furthermore, transistor 23 The gate electrode of pin 2 is electrically connected to node 435.

[0105] One of the source and drain electrodes of transistor 434 is electrically connected to the potential supply line V0. One end is connected to node 437, and the other end is electrically connected to node 437. Furthermore, transistor 434 The gate electrode is electrically connected to the scan line GL_m.

[0106] One of the anodes and cathodes of the light-emitting element 125 is electrically connected to the potential supply line VL_b. The other end is electrically connected to node 437.

[0107] As the light-emitting element 125, for example, an organic electroluminescent element (also known as an organic EL element) (u) and the like can be used. However, the light-emitting element 125 is not limited to this, Inorganic EL elements made of inorganic materials may also be used.

[0108] Furthermore, a high power supply potential VDD is supplied to one of the potential supply lines VL_a and VL_b. On the other hand, a low power supply potential VSS is applied.

[0109] In the display device having the pixel circuit 134 shown in Figure 4(B), the drive circuit 132a, or the drive circuit 132b sequentially selects the pixel circuit 134 for each row, and transistors 431 and 431 are selected. Turn on the zista 434 and write the data signal to node 435.

[0110] The pixel circuit 134, on which data has been written to node 435, has transistor 431 and The state is maintained when the transistor 434 is turned off. Furthermore, it writes to node 435. Depending on the potential of the data received, a current flows between the source and drain electrodes of transistor 232. The amount of current flowing is controlled, and the light-emitting element 125 emits light with a brightness corresponding to the amount of current flowing. By performing this step by step for each row, the image can be displayed.

[0111] [An example of a pixel circuit for a liquid crystal display device] The pixel circuit 134 shown in Figure 4(C) consists of a liquid crystal element 432, a transistor 431, and a capacitance element. It has child 233 and

[0112] The potential of one of the pair of electrodes of the liquid crystal element 432 is set appropriately according to the specifications of the pixel circuit 134. The orientation state of the liquid crystal element 432 is set by the data written to node 436. Furthermore, one of the pairs of electrodes of the liquid crystal element 432 that each of the multiple pixel circuits 134 possesses A common potential may be applied to them. Also, each row of pixel circuits 134 liquid crystal elements A different potential may be applied to one of the pair of electrodes of sub-electrode 432.

[0113] For example, the driving method for a display device equipped with a liquid crystal element 432 may be TN mode, STN mode D, VA mode, ASM (Axially Symmetric Aligned Mi cro-cell) mode, OCB (Optically Compensated B irefringence) mode, FLC (Ferroelectric Liqui d Crystal) mode, AFLC (AntiFerroelectric Liq. uid Crystal) mode, MVA mode, PVA (Patterned Ver (Critical Alignment) mode, IPS mode, FFS mode, or TBA You may also use modes such as (Transverse Bend Alignment). In addition, as a method of driving the display device, there is also ECB (Electric Ally Controlled Birefringence) mode, PDLC (P Olymer Dispersed Liquid Crystal (PNLC) mode, (Polymer Network Liquid Crystal) mode, guest host There are modes such as St Mode. However, this is not limited to these, and includes liquid crystal elements and their driving methods. Various materials can be used.

[0114] Furthermore, a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent The liquid crystal element 432 may be configured in a further manner. The liquid crystal exhibiting the blue phase has a response speed of 1 msec or less. Because it is short and optically isotropic, orientation processing is unnecessary. It has little dependence on the field of view.

[0115] Furthermore, display elements other than the light-emitting element 125 and the liquid crystal element 432 may be used as display elements. This is also possible. For example, as a display element, electrophoretic elements, electronic ink, electro Feeding elements, MEMS (Micro-Electro-Mechanical Systems), Digital Micromirror devices (DMD), DMS (Digital Microshutter), I It is also possible to use MOD (Interference Modulation) elements, etc. .

[0116] In the pixel circuit 134 at row m and column n, the source electrode and drain of transistor 431 One electrode is electrically connected to signal line DL_n, and the other is electrically connected to node 436. The gate electrode of transistor 431 is electrically connected to the scan line GL_m. Rangista 431, by being in an ON or OFF state, transmits data to node 436. It has a function to control the writing of the signal.

[0117] One of the pair of electrodes of the capacitive element 233 is connected to a wiring (hereinafter referred to as the capacitance wire CL) to which a specific potential is supplied. The other end is electrically connected to node 436. Also, the liquid crystal element 4 The other electrode of the pair of electrodes 32 is electrically connected to node 436. Note that the potential of the capacitance line CL is The value is set appropriately according to the specifications of the pixel circuit 134. Capacitive element 233 is at node 43 It functions as a storage capacity to hold the data written to 6.

[0118] For example, in a display device having the pixel circuit 134 shown in Figure 4(C), each is driven by the drive circuit 132a The pixel circuits 134 of each row are selected sequentially, and the transistor 431 is turned on to node 436. Write the data signal.

[0119] When a data signal is written to node 436, the pixel circuit 134 has transistor 431 turned off. The state is maintained by entering a certain state. By doing this sequentially for each row, the image can be displayed. .

[0120] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0121] (Embodiment 4) In this embodiment, the pixels 165 and 175 of the display device 100 are applicable to the pixels A more specific example of the basic circuit 134 will be explained using Figures 5 to 8.

[0122] [Example of a 165-pixel configuration] First, let's explain an example of the configuration of pixel 165. Figures 5(A) and 5(B) show pixel 16 This is a magnified plan view of 5. To make the diagram easier to understand, Figure 5(A) shows the light-emitting element 12 The labels such as 5 and colored layer 266 have been omitted. Also, for the same reason, in Figure 5(B) The description of the pixel circuit 134 and other components has been omitted. Figure 6 is shown in Figures 5(A) and 5(B) This is a cross-sectional view of area X3-X4, indicated by the dashed line.

[0123] As mentioned above, one pixel circuit 134 can drive one sub-pixel. Therefore, pixel 165 is driven by at least three pixel circuits 134. In Figure 5(A), The three pixel circuits 134 that drive element 165 are respectively pixel circuit 134R, pixel circuit 13 4G is shown as pixel circuit 134B. In pixel 165, the longitudinal direction of pixel circuit 134. The longitudinal directions of the light-emitting element 125 and the colored layer 266 are approximately coincidental. The colored layer 266 has The color layer 266R is superimposed on the pixel circuit 134R, and the coloring layer 266G is superimposed on the pixel circuit 134G. The colored layer 266B is superimposed on the pixel circuit 134B. Also, the colored layer 266R is superimposed on the pixel circuit 13 Driven by 4R, the colored layer 266G is driven by the pixel circuit 134G, and the colored layer 266 B is driven by pixel circuit 134B.

[0124] The wiring 135 shown in Figures 5(A) and 6 corresponds to the scan line GL_m. Also, wiring 13 Part of 5 corresponds to the gate electrode 206, and transistors 431 and 434 It functions as a gate electrode. Also, a portion of the wiring 138 is connected to one electrode of the capacitive element 233. It functions as such, and the other part functions as the gate electrode of transistor 232. Also, wiring 1 37 corresponds to the potential supply line VL_a. Wiring 135, wiring 138, and wiring 137 are They can be formed using the same materials and methods as the gate electrode 206.

[0125] Furthermore, a gate insulating layer 207 is formed on wiring 135, wiring 138, and wiring 137. The gate insulating layer 207 on wiring 138 functions as a dielectric layer for the capacitive element 233. Furthermore, wiring 136, wiring 139, wiring on the gate insulating layer 207 and semiconductor layer 208 Wiring 151, wiring 152, and wiring 156 (see Figures 5(A) and 6). 136 corresponds to the signal line DL_n. Also, part of wiring 136 is connected to transistor 431. It functions as one of the source and drain electrodes. Wiring 139 is connected to the gate insulating layer 2 The wiring 138 is electrically connected through the opening 153 formed in 07. This functions as the source electrode and the other drain electrode of transistor 431. Wiring 1 56 corresponds to the potential supply line V0. Also, part of the wiring 156 is connected to the base of transistor 434. It functions as one of the transition electrode and drain electrode. Also, part of the wiring 151 is transient It functions as the other of the source and drain electrodes of the STA 434.

[0126] Wiring 151 functions as the other electrode of the capacitive element 233. Wiring 152 is the gate insulating layer. The wiring 137 is electrically connected through the opening 154 formed in 207. 2 functions as one of the source and drain electrodes of transistor 232. Wiring 151 functions as the source electrode and the other drain electrode of transistor 232. Wires 136, 139, 151, 152, and 156 are source Formed using the same materials and methods as electrodes 209a and drain electrode 209b. It is possible.

[0127] An insulating layer 210 is placed on wiring 136, wiring 139, wiring 151, wiring 152, and wiring 156. A layer is formed, and an insulating layer 211 is formed on the insulating layer 210. Also, on the insulating layer 211 The formed electrode 118 is connected via the opening 155 formed in the insulating layer 210 and the insulating layer 211. The light-emitting element 125 is electrically connected to the wiring 151. They are directly connected.

[0128] The light emitted from the light-emitting element 125 is converted into light 235R by the colored layer 266R. Note that other configurations are described in detail in other embodiments, so their explanation here is omitted. ru.

[0129] [Example of a 175-pixel configuration] Next, we will describe an example of the configuration of pixel 175. Figure 5(C) is a magnified view of pixel 175 in a plane. This is a diagram. To make the diagram easier to understand, Figure 5(C) shows the light-emitting element 125 and the colored layer 266. Details such as those mentioned above have been omitted.

[0130] Pixel 175 rotates the light-emitting element 125 and color layer 266 of pixel 165 by 90 degrees to form a V-arrangement. This can be achieved by doing so. In this case, the arrangement of the pixel circuit 134 can remain as an H arrangement. Figure 7 Figure 5(C) shows a cross-sectional view of area X5–X6, indicated by a dashed line.

[0131] In one aspect of the present invention, the display device 100 has a pixel circuit 134 configured with pixels 165 and 175. There is no need to change anything. Therefore, there is no need to change the driving method in regions 160 and 170. Using multiple drive circuits or drive methods within the display area 131 may lead to a decrease in manufacturing yield and production This can easily lead to increased manufacturing costs and contribute to a decrease in the productivity of display devices. One aspect of the present invention According to this, it is possible to realize a display device with good productivity and good display quality.

[0132] [Variations in pixel configuration] Note that a configuration may be adopted in which the coloring layer 266, the light-shielding layer 264, the overcoat layer 268, etc. are not provided. In that case, instead of the light-emitting element 125 that emits white light, a light-emitting element 125R that emits red light, a light-emitting element 125G that emits green light, a light-emitting element 125B that emits blue light, etc. are used for each sub-pixel, and color display can be performed. An example of a configuration without using the coloring layer 266, etc. is shown in FIG. 8.

[0133] The light-emitting element 125R, the light-emitting element 125G, and the light-emitting element 125B each have an EL layer 117R, an EL layer 117G, and an EL layer 117B. The EL layer 117R, the EL layer 117G, and the EL layer 117B can emit light of different colors such as red light 235R, green light 235G, and blue light 235B, etc.

[0134]

[0135] (Embodiment 5) In this embodiment, an example of a method for manufacturing the display device 100 will be described with reference to FIGS. 9 to 15. FIGS. 9 to 14 correspond to the cross-section of the portion X1 - X2 indicated by the dashed-dotted line in FIG. 1(A).

[0136] [Forming a release layer] First, a release layer 113 is formed on the element formation substrate 101 (see FIG. 9(A)). Note that as the element formation substrate 101, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, a metal substrate, etc. can be used. Also, a heat resistance that can withstand the processing temperature of this embodiment A plastic substrate may also be used.

[0137] Furthermore, the glass substrate can be, for example, aluminosilicate glass or aluminoborosilicate glass. Glass materials such as barium borosilicate glass are used. Furthermore, barium oxide ( By including a large amount of BaO, more practical heat-resistant glass can be obtained. In addition, crystallized glass You can use materials like lass.

[0138] The release layer 113 is made of tungsten, molybdenum, titanium, tantalum, niobium, nickel, and Balt, zirconium, ruthenium, rhodium, palladium, osmium, iridium, A selection of elements from silicon, or an alloy material containing an element, or a compound material containing an element. It can be formed using these materials. Furthermore, these materials can be formed in a single layer or in a laminate. Yes, it is possible. Furthermore, the crystal structure of the exfoliation layer 113 can be amorphous, microcrystalline, or polycrystalline. Good. Also, the release layer 113 is made of aluminum oxide, gallium oxide, zinc oxide, and titanium dioxide. Indium oxide, indium tin oxide, indium zinc oxide, or InGaZn It can also be formed using metal oxides such as O(IGZO).

[0139] The release layer 113 can be formed by sputtering, CVD, coating, printing, etc. The coating methods include spin coating, droplet dispensing, and dispensing.

[0140] When forming the release layer 113 as a single layer, tungsten, molybdenum, or tungsten and It is preferable to use an alloy material containing molybdenum. Alternatively, the release layer 113 can be formed as a single layer. In that case, tungsten oxide or oxidized nitride, molybdenum oxide or oxide It is preferable to use an oxide or oxynitride of a nitride or an alloy containing tungsten and molybdenum. It is preferable.

[0141] Further, when forming a laminated structure of a layer containing tungsten and a layer containing tungsten oxide as the release layer 113, for example, an oxide insulating layer is formed in contact with the layer containing tungsten. By doing so, it may be utilized that tungsten oxide is formed at the interface between the layer containing tungsten and the oxide insulating layer. Also, the surface of the layer containing tungsten may be treated by thermal oxidation treatment, oxygen plasma treatment, treatment with a solution having a strong oxidizing power such as ozone water, etc. to form a layer containing tungsten oxide. By doing so, it may be utilized that tungsten oxide is formed at the interface between the layer containing tungsten and the oxide insulating layer. Also, the surface of the layer containing tungsten may be treated by thermal oxidation treatment, oxygen plasma treatment, treatment with a solution having a strong oxidizing power such as ozone water, etc. to form a layer containing tungsten oxide. By doing so, it may be utilized that tungsten oxide is formed at the interface between the layer containing tungsten and the oxide insulating layer. Also, the surface of the layer containing tungsten may be treated by thermal oxidation treatment, oxygen plasma treatment, treatment with a solution having a strong oxidizing power such as ozone water, etc. to form a layer containing tungsten oxide. By doing so, it may be utilized that tungsten oxide is formed at the interface between the layer containing tungsten and the oxide insulating layer. Also, the surface of the layer containing tungsten may be treated by thermal oxidation treatment, oxygen plasma treatment, treatment with a solution having a strong oxidizing power such as ozone water, etc. to form a layer containing tungsten oxide. By doing so, it may be utilized that tungsten oxide is formed at the interface between the layer containing tungsten and the oxide insulating layer. Also, the surface of the layer containing tungsten may be treated by thermal oxidation treatment, oxygen plasma treatment, treatment with a solution having a strong oxidizing power such as ozone water, etc. to form a layer containing tungsten oxide.

[0142] In this embodiment, tungsten is formed as the release layer 113 by sputtering. .

[0143] 〔Forming an insulating layer〕 Next, an insulating layer 205 is formed as an underlayer on the release layer 113 (see Fig. 9(A)). The insulating layer 205 is preferably formed of single layer or multilayer of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, aluminum oxynitride, or aluminum nitride oxide, etc. For example, the insulating layer 205 may have a two-layer structure in which silicon oxide and silicon nitride are laminated, or may have a five-layer structure in which the above materials are combined. The insulating layer 205 can be formed using sputtering method, CVD method, thermal oxidation method, coating method, printing method, etc. Next, an insulating layer 205 is formed as an underlayer on the release layer 113 (see Fig. 9(A)). The insulating layer 205 is preferably formed of single layer or multilayer of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, aluminum oxynitride, or aluminum nitride oxide, etc. For example, the insulating layer 205 may have a two-layer structure in which silicon oxide and silicon nitride are laminated, or may have a five-layer structure in which the above materials are combined. The insulating layer 205 can be formed using sputtering method, CVD method, thermal oxidation method, coating method, printing method, etc. Next, an insulating layer 205 is formed as an underlayer on the release layer 113 (see Fig. 9(A)). The insulating layer 205 is preferably formed of single layer or multilayer of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, aluminum oxynitride, or aluminum nitride oxide, etc. For example, the insulating layer 205 may have a two-layer structure in which silicon oxide and silicon nitride are laminated, or may have a five-layer structure in which the above materials are combined. The insulating layer 205 can be formed using sputtering method, CVD method, thermal oxidation method, coating method, printing method, etc. Next, an insulating layer 205 is formed as an underlayer on the release layer 113 (see Fig. 9(A)). The insulating layer 205 is preferably formed of single layer or multilayer of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, aluminum oxynitride, or aluminum nitride oxide, etc. For example, the insulating layer 205 may have a two-layer structure in which silicon oxide and silicon nitride are laminated, or may have a five-layer structure in which the above materials are combined. The insulating layer 205 can be formed using sputtering method, CVD method, thermal oxidation method, coating method, printing method, etc. Next, an insulating layer 205 is formed as an underlayer on the release layer 113 (see Fig. 9(A)). The insulating layer 205 is preferably formed of single layer or multilayer of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, aluminum oxynitride, or aluminum nitride oxide, etc. For example, the insulating layer 205 may have a two-layer structure in which silicon oxide and silicon nitride are laminated, or may have a five-layer structure in which the above materials are combined. The insulating layer 205 can be formed using sputtering method, CVD method, thermal oxidation method, coating method, printing method, etc. Next, an insulating layer 205 is formed as an underlayer on the release layer 113 (see Fig. 9(A)). The insulating layer 205 is preferably formed of single layer or multilayer of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, aluminum oxynitride, or aluminum nitride oxide, etc. For example, the insulating layer 205 may have a two-layer structure in which silicon oxide and silicon nitride are laminated, or may have a five-layer structure in which the above materials are combined. The insulating layer 205 can be formed using sputtering method, CVD method, thermal oxidation method, coating method, printing method, etc. Next, an insulating layer 205 is formed as an underlayer on the release layer 113 (see Fig. 9(A)). The insulating layer 205 is preferably formed of single layer or multilayer of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, aluminum oxynitride, or aluminum nitride oxide, etc. For example, the insulating layer 205 may have a two-layer structure in which silicon oxide and silicon nitride are laminated, or may have a five-layer structure in which the above materials are combined. The insulating layer 205 can be formed using sputtering method, CVD method, thermal oxidation method, coating method, printing method, etc.

[0144] The thickness of the insulating layer 205 may be 30 nm or more and 500 nm or less, preferably 50 nm or more and 400 nm or less. The thickness of the insulating layer 205 may be 30 nm or more and 500 nm or less, preferably 50 nm or more and 400 nm or less.

[0145] The insulating layer 205 prevents the diffusion of impurity elements from the element formation substrate 101 and the release layer 113. , or can be reduced. Also, even after replacing the element formation substrate 101 with substrate 111, To prevent the diffusion of impurity elements from the substrate 111 or adhesive layer 112 to the light-emitting element 125, or This can be reduced. In this embodiment, the insulating layer 205 is made by plasma CVD. A multilayer film of silicon oxide nitride with a thickness of 200 nm and silicon oxide nitride with a thickness of 50 nm is used. .

[0146] [To form the gate] Next, a gate electrode 206 is formed on the insulating layer 205 (see Figure 9(A)). 206 is made of aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten. A selected metal element, or an alloy containing the above-mentioned metal elements, or the above-mentioned metal elements It can be formed using a combination of alloys, etc. Also, manganese, zirconium A metal element selected from one or more of these may be used. Also, the gate electrode 206 It may be a single-layer structure or a laminated structure of two or more layers. For example, an aluminum containing silicon A single-layer structure of a titanium film, a double-layer structure in which an aluminum film is laminated on a titanium film, and a titanium nitride film with a titanium film on top. Two-layer structure with stacked tungsten films, two-layer structure with stacked tungsten films on titanium nitride films, nitriding A two-layer structure consisting of a tungsten film laminated on a tantalum film or tungsten nitride film, and a titanium film. A two-layer structure with a copper film laminated on top, a titanium film, and an aluminum film laminated on top of the titanium film, Furthermore, there are three-layer structures in which a titanium film is formed on top of it. Also, aluminum, titanium, One of the following is selected from tantalum, tungsten, molybdenum, chromium, neodymium, and scandium. Alternatively, alloy films or nitride films combining multiple types of films may be used.

[0147] Furthermore, tetrahydrogen 206 contains indium tin oxide and indium acid containing tungsten oxide. Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide The substance contains titanium dioxide, indium tin oxide, indium zinc oxide, and silicon oxide. Transparent conductive materials such as indium tin oxide can also be applied. A laminated structure of the above-mentioned light-transmitting conductive material and the above-mentioned metal element can also be used.

[0148] First, on the insulating layer 205, plasma CVD, LPCVD, or MOCVD (Met (e.g., organic chemical vapor deposition) method The gate electrode 206 is produced by methods such as CVD, ALD, sputtering, and vapor deposition. A conductive film is laminated, and a resist mask is formed on the conductive film by a photolithography process. When a conductive film that will become the gate electrode 206 is formed by the MOCVD method, damage to the surface to be formed occurs. The process can be reduced. Next, the gate electrode 206 is formed using a resist mask. A portion of the conductive film is etched to form the gate electrode 206. At this time, other wiring and Electrodes can also be formed at the same time.

[0149] The conductive film can be etched using either the dry etching method or the wet etching method, or both. It may be used. Note that when etching is performed by the dry etching method, the resist mass Performing an ashing treatment before removing the mask makes it easier to remove the resist mask using a stripping solution. It can be done this way.

[0150] Furthermore, the gate electrode 206 may be formed by electroplating, printing, or inkjet instead of the above-mentioned formation method. It may be formed by the ALD method or the like.

[0151] The thickness of the gate electrode 206 is 5 nm or more and 500 nm or less, more preferably 10 nm or more and 300 nm or less, more preferably 10 nm or more and 200 nm or less.

[0152] Further, by forming the gate electrode 206 using a conductive material having light shielding properties, it is possible to make it difficult for light from the outside to reach the semiconductor layer 208 from the gate electrode 206 side. As a result, variations in the electrical characteristics of the transistor due to light irradiation can be suppressed.

[0153] [Forming the gate insulating layer] Next, the gate insulating layer 207 is formed (see FIG. 9(A)). The gate insulating layer 207 may be, for example, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, a mixture of aluminum oxide and silicon oxide, hafnium oxide, gallium oxide, or a Ga-Zn-based metal oxide, etc., and may be provided in a laminated or single-layer form.

[0154] Also, as the gate insulating layer 207, hafnium silicate (HfSiO x ), hafnium silicate with nitrogen added (HfSi O x O y N z ), hafnium aluminate with nitrogen added (HfAl O x O y N z ), high- k materials such as hafnium oxide and yttrium oxide can be used to reduce the gate leakage of the transistor. For example, a laminate of silicon oxynitride and hafnium oxide may be used.

[0155] The thickness of the gate insulating layer 207 is 5 nm to 400 nm, more preferably 10 nm or more. The wavelength should be 300 nm or less, more preferably 50 nm to 250 nm.

[0156] The gate insulating layer 207 can be formed by sputtering, CVD, vapor deposition, or the like. .

[0157] The gate insulating layer 207 is a silicon oxide film, a silicon oxide nitride film, or silicon oxide nitride film. When forming a film, depositing gases containing silicon and oxidizing gases are used as raw material gases. It is preferable that it be present. Typical examples of silicon-containing sedimentary gases include silane, disilane, Examples include trisilane and silane fluoride. Oxidizing gases include oxygen, ozone, and nitrous oxide. Examples include nitrogen dioxide, etc.

[0158] Furthermore, the gate insulating layer 207 consists of a nitride insulating layer and an oxide insulating layer, arranged sequentially from the gate electrode 206 side. A laminated structure in which layers are stacked may also be used. By providing a nitride insulating layer on the gate electrode 206 side, From the gate electrode 206 side, hydrogen, nitrogen, alkali metals, or alkaline earth metals, etc., are present in the semiconductor. This prevents them from moving to layer 208. Generally speaking, nitrogen, alkali metals, and Alkaline earth metals, etc., function as impurity elements in semiconductors. Also, hydrogen is an oxide semiconductor. It functions as an impurity element in the conductor. Therefore, "impurity" in this specification includes hydrogen, It shall contain nitrogen, alkali metals, or alkaline earth metals, etc.

[0159] Furthermore, when using an oxide semiconductor as the semiconductor layer 208, the oxide semiconductor is used on the semiconductor layer 208 side. By providing an edge layer, the defect levels at the interface between the gate insulating layer 207 and the semiconductor layer 208 are reduced. It is possible to reduce this. As a result, it is possible to obtain a transistor with less degradation of electrical characteristics. Yes, it is possible. Furthermore, when using an oxide semiconductor as the semiconductor layer 208, the oxide insulating layer is used as When formed using an oxide insulating layer containing more oxygen than satisfactorily satisfying the stoichiometric composition, This further reduces the defect level density at the interface between the gate insulating layer 207 and the semiconductor layer 208. This is preferable because it allows for this.

[0160] Furthermore, if the gate insulating layer 207 is made of a laminate of a nitride insulating layer and an oxide insulating layer as described above... In addition, it is preferable to make the nitride insulating layer thicker than the oxide insulating layer.

[0161] Because the nitride insulating layer has a higher dielectric constant than the oxide insulating layer, the thickness of the gate insulating layer 207 Even when thickened, the electric field generated at the gate electrode 206 can be efficiently transmitted to the semiconductor layer 208. Furthermore, by increasing the thickness of the entire gate insulating layer 207, the dielectric strength of the gate insulating layer 207 can be increased. This can improve the reliability of semiconductor devices.

[0162] Furthermore, the gate insulating layer 207 has a first nitride insulating layer with few defects and hydrogen blocking properties. A second nitride insulating layer with high density and an oxide insulating layer are stacked in order from the gate electrode 206 side. A laminated structure can be formed. The gate insulating layer 207 has a first nitride insulating layer with few defects. By using this layer, the dielectric strength of the gate insulating layer 207 can be improved. By providing a second nitride insulating layer with high hydrogen blocking properties on the outer insulating layer 207, Hydrogen contained in the electrode 206 and the first nitride insulating layer moves to the semiconductor layer 208. This can prevent it.

[0163] An example of a method for fabricating the first nitride insulating layer and the second nitride insulating layer is shown below. First, By using a plasma CVD method with a mixed gas of ranun, nitrogen, and ammonia as the source gas A silicon nitride film with few defects is formed as the first nitride insulating layer. Next, the raw material gas is Switching to a mixed gas of silane and nitrogen, the hydrogen concentration is low and hydrogen is blocked. A silicon nitride film capable of such formation is formed as a second nitride insulating layer. Depending on the method, a nitride insulating layer with few defects and hydrogen blocking properties is laminated. A gate insulating layer 207 can be formed.

[0164] Furthermore, the gate insulating layer 207 has a third nitride insulating layer with high impurity blocking properties, and A first nitride insulating layer with few defects, a second nitride insulating layer with high hydrogen blocking properties, and acid A laminated structure can be formed in which the oxide insulating layer and the gate electrode 206 are stacked in order from the gate electrode 206 side. A third nitride insulating layer with high impurity blocking properties is provided on the gate insulating layer 207. Then, hydrogen, nitrogen, alkali metals, or alkaline earth metals, etc., are released from the gate electrode 206 into the semiconductor. This prevents movement to layer 208.

[0165] An example of a method for fabricating the first to third nitride insulating layers is shown below. First, By plasma CVD using a mixed gas of silane, nitrogen, and ammonia as the raw material gas Therefore, a silicon nitride film with high impurity blocking properties is formed as a third nitride insulating layer. Next, by increasing the ammonia flow rate, the silicon nitride film with fewer defects is processed in the first nitrogen It is formed as a hydrocarbon insulating layer. Next, the raw material gas is switched to a mixed gas of silane and nitrogen. A silicon nitride film with a low hydrogen concentration and capable of blocking hydrogen is used as the second... It is formed as a nitride insulating layer. This formation method results in fewer defects and fewer impurities. A gate insulating layer 207 is formed by laminating a nitride insulating layer having blocking properties. can.

[0166] Furthermore, when forming a gallium oxide film as the gate insulating layer 207, the MOCVD method is used. It can be formed.

[0167] Furthermore, the semiconductor layer 208 in which the transistor channel is formed and the insulating layer containing hafnium oxide The edge layers are stacked via an oxide insulating layer, and electrons are injected into the insulating layer containing hafnium oxide. This allows you to change the threshold voltage of the transistor.

[0168] [Forming a semiconductor layer] The semiconductor layer 208 is formed using amorphous semiconductors, microcrystalline semiconductors, polycrystalline semiconductors, etc. This is possible. For example, amorphous silicon or microcrystalline germanium can be used. Compound semiconductors such as silicon carbide, gallium arsenide, oxide semiconductors, and nitride semiconductors, Organic semiconductors can be used. The semiconductor layer 208 can be fabricated using plasma CVD, LPCVD, etc. In addition to CVD methods such as the MOCVD method, there are also ALD method, sputtering method, coating method, It can be formed by printing or other methods. When the semiconductor layer 208 is formed by the MOCVD method, This can reduce damage to the surface.

[0169] The thickness of the semiconductor layer 208 is 3 nm to 200 nm, preferably 3 nm to 100 nm. Hereafter, the wavelength is more preferably 3 nm to 50 nm. In this embodiment, semiconductor layer 2 As part 08, a 30 nm thick oxide semiconductor film is formed by sputtering.

[0170] Next, a resist mask is formed on the oxide semiconductor film, and a conductive film is formed using the resist mask. A semiconductor layer 208 is formed by selectively etching a portion of the resist mask. Formation can be carried out using appropriate methods such as photolithography, printing, and inkjet. It is possible. When the resist mask is formed by the inkjet method, a photomask is not used. This can reduce manufacturing costs.

[0171] Etching of oxide semiconductor films can be done using either dry etching or wet etching methods. Both methods may be used. After etching the oxide semiconductor film is complete, remove the resist mask. (See Figure 9(B).)

[0172] [Forming source electrodes, drain electrodes, etc.] Next, the source electrode 209a, drain electrode 209b, wiring 219, and terminal electrode 216 First, a conductive layer is formed on the gate insulating layer 207 and the semiconductor layer 208. A film is formed. Conductive films are formed using methods such as plasma CVD, LPCVD, or MOCVD. Formed by methods such as CVD, ALD, sputtering, vapor deposition, coating, and printing. This can be achieved. When a conductive film is formed by the MOCVD method, damage to the surface to be formed is minimized. It is possible.

[0173] Examples of conductive films include aluminum, titanium, chromium, nickel, copper, yttrium, and zirconium. A single elemental metal consisting of nium, molybdenum, silver, tantalum, or tungsten, or this An alloy mainly composed of can be used as a single-layer or laminated structure. For example, silica A single-layer structure of an aluminum film containing condensate, and a double-layer structure in which an aluminum film is laminated on a titanium film. A two-layer structure in which an aluminum film is laminated on a tungsten film, copper-magnesium-aluminum A two-layer structure in which a copper film is laminated on a um alloy film, a two-layer structure in which a copper film is laminated on a titanium film, tung A two-layer structure in which a copper film is laminated on a stainless steel film, a titanium film or titanium nitride film, and the titanium film Alternatively, an aluminum film or copper film is laminated on top of a titanium nitride film, and then titanium is laid on top of that. A three-layer structure forming a film or titanium nitride film, a molybdenum film or molybdenum nitride film, and An aluminum film or copper film is laminated on top of a molybdenum film or molybdenum nitride film. Furthermore, a three-layer structure is formed by forming a molybdenum film or molybdenum nitride film on top of it, tungsten One example is a three-layer structure in which a copper film is layered on top of a film, and then a tungsten film is formed on top of that.

[0174] Furthermore, indium tin oxide, zinc oxide, indium oxides including tungsten oxide, and acid Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, oxide Titanium-containing indium tin oxide, indium zinc oxide, and indium with added silicon dioxide Conductive materials containing oxygen, such as um-tin oxide, and nitrogen-containing materials, such as titanium nitride and tantalum nitride. Conductive materials may be used. In addition, materials containing the aforementioned metal elements and conductive materials containing oxygen may be used. It is also possible to create a laminated structure by combining materials. Furthermore, the aforementioned materials containing metal elements, A layered structure can also be formed by combining conductive materials containing nitrogen. Furthermore, the aforementioned metals... The product of a combination of elemental materials, oxygen-containing conductive materials, and nitrogen-containing conductive materials It can also be structured in layers.

[0175] Furthermore, the thickness of the conductive film is 5 nm to 500 nm, more preferably 10 nm to 300 nm. The wavelength is less than or equal to nm, more preferably between 10 nm and 200 nm. In this embodiment, conductive A tungsten film with a thickness of 300 nm is formed as a membrane.

[0176] Next, a resist mask is used to selectively etch a portion of the conductive film, and the source electrode 20 9a, drain electrode 209b, wiring 219, and terminal electrode 216 (formed in the same layer) Forms a resist mask (including other electrodes or wiring). This can be done using methods such as roughing, printing, or inkjet printing, as appropriate. (Resist mask) Since the inkjet method does not require the use of a photomask, manufacturing costs can be reduced. ru.

[0177] The conductive film can be etched using either the dry etching method or the wet etching method, or both. It may be used. Note that a portion of the exposed semiconductor layer 208 is removed by the etching process. There are cases where this occurs.

[0178] After etching the conductive film is complete, remove the resist mask (see Figure 9(C)).

[0179] [Forms an insulating layer] Next, the source electrode 209a, drain electrode 209b, wiring 219, and terminal electrode 216 An insulating layer 210 is formed on top (see Figure 9(D)). The insulating layer 210 is the same as the insulating layer 205. It can be formed using various materials and methods.

[0180] Furthermore, if an oxide semiconductor is used for the semiconductor layer 208, at least the semiconductor of the insulating layer 210 It is preferable to use an insulating layer containing oxygen in the region in contact with layer 208. For example, insulating layer 2 When 10 is made up of multiple layers, at least the layer in contact with the semiconductor layer 208 is made of silicon oxide. Just form it.

[0181] [Formation of an opening] Next, a resist mask is used to selectively etch a portion of the insulating layer 210, creating an opening 12 Form 8 (see Figure 9(D)). At this time, other openings not shown are also formed simultaneously. Dist masks are formed using appropriate methods such as photolithography, printing, and inkjet printing. This can be done by forming a resist mask using an inkjet method, which allows the use of a photomask. Since it does not require any additional components, manufacturing costs can be reduced.

[0182] The etching of the insulating layer 210 can be done by either a dry etching method or a wet etching method. You can use both.

[0183] The formation of the opening 128 exposes a portion of the drain electrode 209b and the terminal electrode 216. After forming mouth 128, remove the resist mask.

[0184] [Forms a planar film] Next, an insulating layer 211 is formed on the insulating layer 210 (see Figure 10(A)). Insulating layer 211 This can be formed using the same materials and methods as the insulating layer 205.

[0185] Furthermore, in order to reduce surface irregularities on the surface of the light-emitting element 125, a planarization treatment is applied to the insulating layer 211. You may perform a planarization treatment. There are no particular limitations on the planarization treatment, but polishing treatment (e.g., chemical machine polishing) is also acceptable. Polishing method (Chemical Mechanical Polishing: CMP), This can be done by dry etching.

[0186] Furthermore, by forming the insulating layer 211 using an insulating material with a planarization function, the polishing process is eliminated. This can also be omitted. Examples of insulating materials with planarization properties include polyimide resin. Organic materials such as acrylic resin can be used. In addition to the above organic materials, low dielectric constant materials can also be used. Materials (low-k materials), etc., can be used. Furthermore, the insulating layer formed from these materials... Multiple layers may be stacked to form an insulating layer 211.

[0187] Furthermore, a portion of the insulating layer 211 in the area overlapping with the opening 128 is removed to form the opening 129. At this time, other openings not shown in the diagram are also formed simultaneously. Later, the external electrode 124 is connected. The insulating layer 211 in the area is removed. Furthermore, the openings 129 etc. are photolithographically treated on the insulating layer 211. A resist mask is formed by a graphing process, and the insulating layer 211 is covered by the resist mask. It can be formed by etching the areas that have not been etched. By forming the opening 129, The surface of the drain electrode 209b is exposed.

[0188] Furthermore, by using a photosensitive material for the insulating layer 211, a resist mask can be used. An opening 129 can be formed without any problems. In this embodiment, a photosensitive polyimide resin is used. The insulating layer 211 and the opening 129 are formed using this method.

[0189] [Forms the anode] Next, electrodes 115 are formed on the insulating layer 211 (see Figure 10(B)). Electrodes 115 are, It is formed using a conductive material that efficiently reflects the light emitted by the EL layer 117 that is formed later. This is preferable. Note that the electrode 115 is not limited to a single layer, but may also have a multi-layered structure. Example For example, when electrode 115 is used as the anode, the layer in contact with the EL layer 117 is made of indium stinic acid. A layer with a higher work function and light transmittance than the EL layer 117, such as a chromium layer, is used in contact with that layer. A highly reflective layer (such as aluminum, an aluminum-containing alloy, or silver) may be added. stomach.

[0190] In this embodiment, a display device with a top emission structure is given as an example, but Mu-emission structure (bottom injection structure), or dual-emission structure (double-sided injection structure) It can also be used as a display device.

[0191] The display device 100 has a bottom emission structure (bottom surface injection structure) or a dual emission structure If the display device has a double-sided injection structure, the electrode 115 must be a transparent conductive material. You just need to use the materials.

[0192] The electrode 115 is formed by creating a conductive film on the insulating layer 211, and then applying a resist to the conductive film. A resist mask is formed, and the areas of the conductive film not covered by the resist mask are etched. It can be formed by the following methods. The conductive film can be etched by dry etching or wet etching. Alternatively, an etching method combining both methods can be used. Formation of a resist mask This can be done using photolithography, printing, inkjet, etc., as appropriate. When a resist mask is formed using an inkjet method, a photomask is not used, Manufacturing costs can be reduced. After the electrode 115 is formed, the resist mask is removed.

[0193] [To form a partition] Next, a partition wall 114 is formed (see Figure 10(C)). The partition wall 114 is formed between adjacent pixels. This is provided to prevent the optical element 125 from unintentionally short-circuiting and emitting false light. When a metal mask is used to form the EL layer 117 described above, the metal mask comes into contact with the electrode 115. It also has a function to prevent contact. The partition wall 114 is made of epoxy resin, acrylic resin, and imide. It can be formed from organic resin materials such as resins, or inorganic materials such as silicon oxide. (Partition) 114 is such that its sidewalls are inclined surfaces formed with a tapered or continuous curvature. It is preferable to form it in this way. By making the side wall of the partition wall 114 into this shape, later formed This allows for good coverage of the EL layer 117 and the electrodes 118.

[0194] [Forms an EL layer] The configuration of the EL layer 117 will be described in Embodiment 7.

[0195] [Forms a cathode] In this embodiment, electrode 118 is used as the cathode, so electrode 118 is connected to the EL layer 11 described later. It is preferable to form it using a material with a small work function that can inject electrons into 7. Rather than elemental metals with small work functions, alkali metals or alkaline earth elements with small work functions. A layer of metal with a few nanometers of structure is formed as a buffer layer, and a metal material such as aluminum is placed on top of it. Formed using conductive oxide materials such as indium tin oxide, or semiconductor materials. Alternatively, an alkaline earth metal oxide, halide, or magnesium may be used as a buffer layer. Alloys such as nesium-silver can also be used.

[0196] Furthermore, when extracting light emitted from the EL layer 117 via the electrode 118, the electrode 118 Preferably, it has light transmittance to visible light. Electrode 115, EL layer 117, electrode 118 This forms the light-emitting element 125 (see Figure 10(D)).

[0197] [Forming a substrate for forming opposing elements] Light-shielding layer 264, coloring layer 266, and overcoat layer 268, insulating layer 145, release layer 1 The element formation substrate 141 on which 43 is formed is placed on the element formation substrate 101 via the adhesive layer 120. Formed (see Figure 11(A)). Note that the element formation substrate 141 is directed toward the element formation substrate 101. Because they are formed to overlap, the element formation substrate 141 is sometimes referred to as the "opposing element formation substrate". There is. The configuration of the element formation substrate 141 (opposite element formation substrate) will be explained later.

[0198] The adhesive layer 120 is formed in contact with the electrode 118. The element forming substrate 141 has the adhesive layer 120 It is fixed by this. The adhesive layer 120 can be a light-curing adhesive, a reaction-curing adhesive, or a thermo-curing adhesive. Chemical or anaerobic adhesives can be used. For example, epoxy resin, acrylic A resin such as ru-resin or imide resin can be used. In the case of a top emission structure, an adhesive layer 1 20. Desiccants smaller than the wavelength of light (such as zeolites) or fillers with a high refractive index (acids) When titanium dioxide or zirconium is mixed in, the light extraction efficiency of the EL layer 117 increases. It is suitable for improvement.

[0199] [The element-forming substrate is peeled off from the insulating layer.] Next, the element forming substrate 101, which is in contact with the insulating layer 205 via the release layer 113, is placed against the insulating layer 205 It is peeled off (see Figure 11(B)). The peeling method involves applying mechanical force (human (Processes such as peeling with hands or jigs, separating while rotating rollers, ultrasonic waves, etc.) This can be done using the following method. For example, the peeling layer 113 can be cut with a sharp blade or laser light irradiation. Make an incision and inject water into the incision. Alternatively, spray water into the incision. Due to capillary action, water seeps between the peeling layer 113 and the insulating layer 205, forming the element base The plate 101 can be easily peeled off from the insulating layer 205.

[0200] [Bonding the circuit boards together] Next, the substrate 111 is bonded to the insulating layer 205 via the adhesive layer 112 (Figure 12(A)). See Figure 12(B). The adhesive layer 112 can be made of the same material as the adhesive layer 120. ru.

[0201] [The substrate for forming the opposing element is peeled off from the insulating layer.] Next, the element forming substrate 141, which is in contact with the insulating layer 145 via the release layer 143, is placed against the insulating layer 145 It peels off from (see Figure 13(A)). The peeling off of the element formation substrate 141 is the same as the element formation described above. This can be done in the same way as peeling off substrate 101.

[0202] [Bonding the circuit boards together] Next, the substrate 121 is bonded to the insulating layer 145 via the adhesive layer 142 (see Figure 13(B)). The adhesive layer 142 can be made of the same material as the adhesive layer 120.

[0203] [Form an opening] Next, the substrate 121 and adhesive layer 142 in the region overlapping with the terminal electrode 216 and the opening 128, Remove the insulating layer 145, the coloring layer 266, the overcoat layer 268, and the adhesive layer 120. , an opening 122 is formed (see Figure 14(A)). By forming the opening 122, the end A portion of the surface of the sub-electrode 216 is exposed.

[0204] [Forming external electrodes] Next, an anisotropic conductive connecting layer 123 is formed in the opening 122, and on the anisotropic conductive connecting layer 123, External electrodes 124 are formed to input power and signals to the display device 100 (see Figure 14(B)). (Illuminate). The terminal electrode 216 is electrically connected to the external electrode 124 via the anisotropic conductive connecting layer 123. The process continues. Note that the external electrode 124 can be, for example, an FPC (Flexible Printed Circuit). A ted circuit can be used.

[0205] The anisotropic conductive connecting layer 123 is made of various anisotropic conductive films (ACF: Anisotropic c Conductive Film) or anisotropic conductive paste (ACP: Anisot It can be formed using materials such as ropic conductive paste.

[0206] The anisotropic conductive connecting layer 123 is a thermosetting, or thermosetting and photocurable resin with conductive particles. A mixture of paste-like or sheet-like materials that has been cured. Anisotropic conductive connecting layer Material 123 exhibits anisotropic conductivity through light irradiation or thermocompression bonding. Anisotropic conductive connecting layer The conductive particles used in 123 include, for example, spherical organic resins made of materials such as Au, Ni, and Co. Particles coated with a thin film of metal can be used.

[0207] [Structures formed on the opposing element formation substrate] Next, regarding structures such as the light-shielding layer 264 formed on the element formation substrate 141, Figure 15 is used. I will explain.

[0208] First, prepare the element formation substrate 141. The element formation substrate 141 is the element formation substrate 10 The same material as in 1 can be used. Next, a release layer 143 and an insulating layer are placed on the element formation substrate 141. An edge layer 145 is formed (see Figure 15(A)). The release layer 143 is made of the same material as the release layer 113. It can be formed using the same materials and methods as the insulating layer 205. It can be formed by materials and methods.

[0209] Next, a light-shielding layer 264 is formed on the insulating layer 145 (see Figure 15(B)). After that, coloring is applied. Formation of layer 266 (see Figure 15(C)).

[0210] The light-shielding layer 264 and the colored layer 266 are produced using various materials by printing, inkjet printing, and The desired positions are formed using photolithography.

[0211] Next, an overcoat layer 268 is formed on the light-shielding layer 264 and the colored layer 266 (Figure 15). (See (D)).

[0212] Examples of the overcoat layer 268 include acrylic resin, epoxy resin, and polyimide resin. Organic insulating layers such as the above can be used. By forming the overcoat layer 268 For example, it suppresses the diffusion of impurities contained in the colored layer 266 towards the light-emitting element 125. It is possible. However, the overcoat layer 268 does not necessarily need to be provided.

[0213] Alternatively, a transparent conductive film may be formed as the overcoat layer 268. By providing a transparent conductive film as the coating layer 268, the light emitted from the light-emitting element 125 It can transmit the emitted light 235 while preventing the transmission of ionized impurities.

[0214] Translucent conductive films include, for example, indium oxide and indium tin oxide (ITO:In (dium zinc oxide), indium zinc oxide, zinc oxide, and gallium are added. It can be formed using zinc oxide, etc. In addition, other translucent materials such as graphene can be used. A thin metal film may be used.

[0215] Through the above process, structures such as a light-shielding layer 264 can be formed on the element formation substrate 141.

[0216] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0217] (Embodiment 6) The configuration of the top-emission display device 100 is modified to create a bottom-emission structure. A display device 150 can be manufactured.

[0218] Figure 16 shows an example of the cross-sectional configuration of the bottom emission structure of the display device 150. This refers to the area X1-X2 shown by the dashed line in Figure 1(A), which is a perspective view of the display device 100, This is a cross-sectional view of the same area. The display device 150 with a bottom emission structure has a light-shielding layer 264 The formation positions of the colored layer 266 and the overcoat layer 268 are different from those of the display device 100. Specifically, the display device 150 has a light-shielding layer 264, a coloring layer 266, and an overcoat. A layer 268 is formed on the substrate 111.

[0219] Furthermore, in the display device 150, the insulating layer 145 is formed directly on the substrate 121, and the adhesive layer 120 It can be bonded to the substrate 111 via the insulating layer 145. Since there is no need to transpose from 41, the element formation substrate 141, release layer 143, and adhesive layer 142 are It can be made unnecessary. Therefore, the productivity and yield of display devices can be improved. It is possible. Furthermore, the other components of the display device 150 can be formed in the same way as the display device 100. ru.

[0220] Furthermore, the bottom emission structure of the display device 150 has electrodes 115 made of light-transmitting conductive material. Formed using a conductive material, the electrode 118 efficiently reflects the light emitted by the EL layer 117. It is formed using electrolytic materials.

[0221] Furthermore, wiring 138 and wiring 151 are used in the bottom emission structure display device 150. (Not shown in Figure 16) is preferably made of a translucent material.

[0222] The display device 150 transmits light 235 emitted from the EL layer 117 to the substrate via the colored layer 266. It can be ejected from side 111.

[0223] In addition, in the display device 150, the transistors that make up the drive circuit 133 are An example using transistor 272 is shown. Transistor 272 is similar to transistor 252. It can be formed, but the electrode 263 is in the region that overlaps with the semiconductor layer 208 on the insulating layer 210. The difference lies in the fact that it has the same material and method as the gate electrode 206. It is possible.

[0224] Electrode 263 can function as a gate electrode. Note that gate electrode 206 and When one of the electrodes 263 is simply called the "gate electrode," the other is called the "back gate." It is sometimes referred to as "electrode". Also, either the gate electrode 206 or electrode 226 is used. It is sometimes called the "first gate electrode" and the other the "second gate electrode."

[0225] Generally, the back gate electrode is formed of a conductive film, and the gate electrode and back gate electrode form a semiconductor. It is positioned so as to sandwich the channel formation region of the layer. Therefore, the back gate electrode is the gate electrode It can function similarly to a pole. The potential of the buck gate electrode is the same potential as the gate electrode. It may be done, and it may be set to GND potential or any other potential. The potential of the back gate electrode is changed. By doing so, the threshold voltage of the transistor can be changed.

[0226] Furthermore, since the gate electrode and back gate electrode are formed of a conductive film, outside the transistor... Function to prevent the generated electric field from acting on the semiconductor layer in which the channel is formed (especially static electricity) It also has an electrostatic shielding function.

[0227] Furthermore, when light is incident from the back gate electrode side, the back gate electrode has light-shielding properties. By forming it with a conductive film, it prevents light from entering the semiconductor layer from the back gate electrode side. This prevents photodegradation of the semiconductor layer and shifts the threshold voltage of the transistor. This prevents deterioration of electrical properties, such as those mentioned above.

[0228] By providing the gate electrode 206 and electrode 263 with the semiconductor layer 208 in between, further, By setting electrode 206 and electrode 263 to the same potential, carriers in the semiconductor layer 208 Because the region over which the carriers flow becomes larger in the film thickness direction, the amount of carrier movement increases. As a result, the on-current of the transistor increases, and the field-effect mobility also increases.

[0229] Furthermore, the gate electrode 206 and electrode 263 each have the function of shielding against an external electric field. Because of this, the charge present in the layer below the gate electrode 206 and above the electrode 263 is This does not affect semiconductor layer 208. As a result, stress testing (for example, applying a negative voltage to the gate) is not performed. In addition, the GBT (Gate Bias-Temperature) stress test and the G Applying a positive voltage to the GBT (GBT stress test) results in small fluctuations in the threshold voltage before and after the test. Furthermore, it suppresses fluctuations in the on-current rise voltage at different drain voltages. It is possible.

[0230] Note that the BT stress test is a type of accelerated stress test, and it tests the transient effects that occur due to long-term use. The characteristic changes of the st (i.e., changes over time) can be evaluated in a short time. In particular, BT st The amount of variation in the transistor's threshold voltage before and after the test is a crucial factor in determining reliability. This is an important indicator. The smaller the fluctuation in threshold voltage before and after the BT stress test, the better. It can be said that this is a highly reliable transistor.

[0231] Furthermore, it has a gate electrode 206 and an electrode 263, and gate electrode 206 and electrode 26 By setting point 3 to the same potential, the fluctuation in threshold voltage is reduced. Therefore, multiple transistors The variation in electrical characteristics in the zista is also reduced at the same time.

[0232] Furthermore, a back gate electrode is provided for the transistor 232 formed in the display area 131. That's good too.

[0233] Furthermore, a touch sensor may be provided, similar to those shown in Figures 21(A) and 21(B). Examples of this case are shown in Figures 22(A) and 22(B).

[0234] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0235] (Embodiment 7) In this embodiment, an example of the configuration of a light-emitting element that can be used in the light-emitting element 125 will be described. In addition, the EL layer 320 shown in this embodiment is the same as the EL layer 117 shown in other embodiments. It corresponds to this.

[0236] <Configuration of light-emitting elements> The light-emitting element 330 shown in Figure 17(A) has an EL between a pair of electrodes (electrode 318, electrode 322). It has a structure in which layer 320 is sandwiched. In the following description of this embodiment, Electrode 318 is used as the anode, and electrode 322 is used as the cathode.

[0237] Furthermore, the EL layer 320 only needs to include at least an emissive layer, and other than the emissive layer... It may also be a laminated structure including a functional layer. The functional layer other than the light-emitting layer may have high hole injection properties. Materials, materials with high hole transport, materials with high electron transport, materials with high electron injection, bipods A layer containing materials with high electron and hole transport properties can be used. In this case, functional layers such as hole injection layers, hole transport layers, electron transport layers, and electron injection layers are appropriately combined. It can be used.

[0238] The light-emitting element 330 shown in Figure 17(A) reacts to the potential difference generated between electrode 318 and electrode 322. As more current flows, holes and electrons recombine in the EL layer 320, causing light to be emitted. In other words, the EL layer 320 is configured in such a way that an emitting region is formed therein.

[0239] In one aspect of the present invention, the light emitted from the light-emitting element 330 is directed to electrode 318 or electrode 322 It is removed to the outside from the side. Therefore, either electrode 318 or electrode 322 is permeable. It is composed of light-sensitive substances.

[0240] Furthermore, the EL layer 320 has electrodes 318 and 3, as shown in Figure 17(B) for the light-emitting element 331. Multiple layers may be stacked between 22 and other elements. It has a stacked structure of n layers (where n is a natural number greater than or equal to 2). When this is the case, it is preferable to provide charge generation layers 320a between the m-th (where m is a natural number satisfying 1 ≤ m < n) EL layer 320 and the (m + 1)-th EL layer 320, respectively.

[0241] The charge generation layer 320a can be formed by appropriately combining a composite material of an organic compound and a metal oxide, a metal oxide, a composite material of an organic compound and an alkali metal, an alkaline earth metal, or a compound thereof, in addition to these. As the composite material of an organic compound and a metal oxide, for example, it contains a composite material of an organic compound and a metal oxide such as vanadium oxide, molybdenum oxide, or tungsten oxide. As the organic compound, aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons such as low molecular weight compounds, or oligomers, dendrimers, polymers, etc. of these low molecular weight compounds can be used. As the organic compound, a hole-transporting organic compound having a hole mobility of 10 cm / Vs or more is preferably applied. However, as long as it is a substance with higher hole transportability than electrons, other materials can also be used. These materials used for the charge generation layer 320a are excellent in carrier injection properties and carrier transport -6 properties, so that low current driving and low voltage driving of the light emitting device 330 can be realized. 2 However, as long as it is a substance with higher hole transportability than electrons, other materials can also be used. These materials used for the charge generation layer 320a are excellent in carrier injection properties and carrier transport properties, so that low current driving and low voltage driving of the light emitting device 330 can be realized.

[0242] In addition, the charge generation layer 320a may be formed by combining a composite material of an organic compound and a metal oxide with other materials. For example, a layer containing a composite material of an organic compound and a metal oxide and a layer containing a compound selected from electron donors and a compound with high electron transportability are combined. It may be formed. Also, a layer containing a composite material of an organic compound and a metal oxide and a transparent conductive film ​​​​They may be formed by combining them.

[0243] A light-emitting element 331 having such a configuration may experience problems such as energy transfer and quenching. This makes it difficult to create light-emitting elements that combine high luminous efficiency and long lifespan by expanding the range of material choices. It is easy to do so. Furthermore, it is also easy to obtain phosphorescence in one light-emitting layer and fluorescence in the other. That is the case.

[0244] The charge generation layer 320a is a layer that generates charge when a voltage is applied to electrodes 318 and 322. It has the function of injecting electrons into one of the EL layers 320 that is formed in contact with the generation layer 320a. It also has the function of injecting holes into the other EL layer 320.

[0245] The light-emitting element 331 shown in Figure 17(B) can be modified by changing the type of light-emitting material used in the EL layer 320. This allows for obtaining various emission colors. In addition, multiple luminescent materials with different emission colors can be used. By using luminescent materials, it is also possible to obtain emission with a broad spectrum or white light emission. ru.

[0246] When obtaining white light emission using the light-emitting element 331 shown in Figure 17(B), a combination of multiple EL layers is used. The combination can be any configuration that emits white light including red, blue, and green light, for example. A light-emitting layer containing a blue fluorescent material as a light-emitting substance, and a layer containing green and red phosphorescent materials as light-emitting substances One example is a configuration having a light-emitting layer containing a red light-emitting layer and a green light-emitting layer. It is also possible to have a configuration having an emissive layer that shows light emission and an emissive layer that shows blue light emission. Alternatively, White light emission can be obtained even with a configuration that has a light-emitting layer that emits light of complementary colors. In a stacked element with two layers, the emission color of the light emitted from one light-emitting layer and the other layer are considered. If the light emitted from one light-emitting layer is to be in a complementary color relationship, the complementary color relationship is blue. Examples include the color yellow, or blue-green and red.

[0247] Furthermore, in the configuration of the stacked element described above, a charge generation layer is placed between the stacked light-emitting layers. By doing so, it is possible to achieve long-life elements in the high-brightness region while keeping the current density low. Yes, it is possible. Furthermore, the voltage drop due to the resistance of the electrode material can be reduced, allowing for uniform generation over a large area. Light becomes possible.

[0248] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0249] (Embodiment 8) In this embodiment, using Figure 18, we will show the images applicable to the pixels 130 of the display device 100. An example of a basic planar shape and arrangement is described below.

[0250] Figure 18(A) shows pixel 130, where the subpixels are in an H array, and pixel 130, where the subpixels are in a V array, in the horizontal direction. A set of 130 pixels are arranged alternately, and in the vertical direction, the subpixels are arranged in an H-shape. This example shows an alternating arrangement of pixels 30 and 130, whose sub-pixels are in a V-array. By arranging 130 and V-arranged pixels 130 alternately, the display quality of the display device 100 is improved. This can reduce rattling.

[0251] Figure 18(B) shows an example of making the planar shape of the subpixels of pixel 130 a curved shape. By making the sub-pixels bent, the same effect as the arrangement shown in Figure 18(A) can be achieved. This can yield results and reduce variations in the display quality of the display device 100. In Figure 18(B), the bending angle θ is preferably between 80° and 100°, and 85° or more. A temperature of 95° or less is preferable.

[0252] The planar shape and arrangement of pixels shown in Figures 18(A) and 18(B) are for the display area 131. This is particularly effective when the entire display area or a large portion of the display area 131 is curved.

[0253] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0254] (Embodiment 9) In this embodiment, an example of an electronic device to which a display device according to one aspect of the present invention is applied is shown in Figure I will explain by referring to the page.

[0255] As an electronic device that applies a display device with a flexible shape, for example, television Devices (also called televisions or television receivers), monitors for computers, etc. Cameras such as digital cameras and digital video cameras, digital photo frames, and mobile phones (Also called mobile phones or mobile phone devices), portable game consoles, personal information terminals, sound playback devices, Examples include large game machines such as pachinko machines.

[0256] Figure 23(A) shows an example of a wristband-type display device. Portable display device 7100 This includes a housing 7101, a curved display unit 7102, operation buttons 7103, and a transmitting / receiving device 71 It is equipped with 04.

[0257] The portable display device 7100 is capable of receiving video signals by the transceiver 7104, and the received The video can be displayed on the display unit 7102. Additionally, the audio signal can be transmitted to other receiving devices. It is also possible to do so.

[0258] Additionally, the 7103 control button allows you to turn the power on and off and switch the displayed image. You can also adjust the volume of the sound, etc.

[0259] Here, the display unit 7102 incorporates a display device according to one aspect of the present invention. This allows for a portable display device with good display quality and high reliability.

[0260] Figure 23(B) shows an example of a mobile phone. Mobile phone 7400 has a housing 7401 In addition to the display unit 7402 having a curved area incorporated into it, there are also operation buttons 7403 and external connections. It is equipped with a connection port 7404, a speaker 7405, a microphone 7406, etc. The speaker unit 7400 is manufactured by using a display device as the display unit 7402.

[0261] The mobile phone 7400 shown in Figure 23(B) allows information to be accessed by touching the display unit 7402 with a finger or the like. You can enter information. You can also make phone calls or type text. The operation can be performed by touching the display unit 7402 with a finger or the like.

[0262] Furthermore, by operating the control button 7403, the power can be turned ON or OFF, and the display unit 7402 will show... You can switch the type of image displayed. For example, from the email composition screen, the main menu - You can switch to a different screen.

[0263] Here, the display unit 7402 incorporates a display device according to one aspect of the present invention. This allows for a mobile phone with good display quality and high reliability.

[0264] Figure 23(C) shows an example of a television system. The television system 9600 is, A display unit 9602 is incorporated into the housing 9601. The display unit 960 has a curved area. 2 makes it possible to display images. Also, speaker 96 is located on the side of the housing 9601. It has 03. Also, here the housing 9601 is supported by stand 9604. This demonstrates that a highly reliable device can be obtained by applying the display device shown in the above embodiment. It can be used as a television device.

[0265] Here, the display unit 9602 incorporates a display device according to one aspect of the present invention. This allows for a television system with good display quality and high reliability.

[0266] The television equipment is operated using the control switches on the 9601 housing or a separate remote control. This can be done by the machine. In addition, the remote control unit will output from the said remote control unit. The configuration may also include a display unit for displaying information.

[0267] The television system shall consist of a receiver, modem, etc. It can receive television broadcasts, and also communicate via wired or wireless connection through a modem. By connecting to a network, one-way (sender to receiver) or two-way (sender to receiver) communication is possible. It is also possible to communicate information between recipients, or between recipients themselves.

[0268] The configurations and methods shown in this embodiment may be appropriately combined with the configurations and methods shown in other embodiments. They can be used in combination. [Explanation of symbols]

[0269] 100 display device 101 Element Formation Substrate 111 circuit board 112 Adhesive layer 113 Exfoliation layer 114 Bulkhead 115 Electrode 117 EL layer 118 Electrode 120 Adhesive layer 121 circuit boards 122 Aperture 123 Anisotropic conductive connecting layer 124 External electrode 125 Light-emitting element 128 Aperture 129 Aperture 131 Display area 133 Drive Circuit 134-pixel circuit 135 Wiring 136 Wiring 137 Wiring 138 Wiring 139 Wiring 141 Element Formation Substrate 142 Adhesive layer 143 Exfoliation layer 145 Insulating layer 150 Display device 151 Wiring 152 Wiring 153 Aperture 154 Aperture 155 Aperture 156 Wiring 160 areas 161 parts 165 pixels 166 Array direction 168 Normal 170 areas 171 parts 175 pixels 176 Array direction 178 Normal 181 parts 205 Insulating layer 206 Gate 207 Gate Insulation Layer 208 Semiconductor layer 210 Insulating layer 211 Insulating layer 216 Terminal electrode 219 Wiring 226 Electrode 232 transistors 233 Capacitive elements 235 light 252 transistors 263 Electrode 264 Light blocking layer 266 Colored layer 268 Overcoat layer 272 transistors 318 Electrode 320 EL layer 322 Electrode 330 light-emitting elements 331 Light-emitting element 431 transistors 432 liquid crystal elements 434 transistors 435 nodes 436 nodes 437 nodes 900 Display device 910 Observer 991 Conductive layer 992 Insulating layer 993 Conductive layer 994 circuit board 7100 Portable Display Device 7101 enclosure 7102 Display section 7103 Operation Buttons 7104 Transceiver 7400 mobile phones 7401 enclosure 7402 Display section 7403 Operation Buttons 7404 External connection port 7405 Speaker 7406 Microphone 9600 Television equipment 9601 enclosure 9602 Display section 9603 Speaker 9604 Stand 117B EL layer 117G EL layer 117R EL layer 125B Light-emitting element 125G light-emitting element 125R light-emitting element 132a Drive Circuit 132b Drive Circuit 134B Pixel Circuit 134G pixel circuit 134R pixel circuit 165B subpixels 165G sub-pixels 165R sub-pixel 165W sub-pixel 175B subpixel 175G sub-pixels 175R sub-pixel 209a Source electrode 209b Drain electrode 235B light 235G light 235R light 266B Colored layer 266G colored layer 266R colored layer 320a Charge generation layer

Claims

1. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a light-emitting element, and a capacitive element. Each of the first transistor and the second transistor has an oxide semiconductor in the channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. A light-emitting device wherein, in a plan view, the distance between the seventh conductive film and the first region in a second direction perpendicular to the first direction is different from the distance between the seventh conductive film and the second region in the second direction.

2. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a light-emitting element, and a capacitive element. Each of the first transistor and the second transistor has an oxide semiconductor in the channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the light-emitting element of the first sub-pixel and the light-emitting element of the second sub-pixel are arranged side by side in a second direction perpendicular to the first direction. A light-emitting device wherein, in a plan view, the distance between the seventh conductive film and the first region in the second direction is different from the distance between the seventh conductive film and the second region in the second direction.

3. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a light-emitting element, and a capacitive element. Each of the first transistor and the second transistor has an oxide semiconductor in the channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the distance between the seventh conductive film and the first region in a second direction perpendicular to the first direction is different from the distance between the seventh conductive film and the second region in the second direction. A light-emitting device in which, in a plan view, the second region is not located on a straight line that passes through the first region and extends in the first direction.

4. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a light-emitting element, and a capacitive element. Each of the first transistor and the second transistor has an oxide semiconductor in the channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the light-emitting element of the first sub-pixel and the light-emitting element of the second sub-pixel are arranged side by side in a second direction perpendicular to the first direction. In a plan view, the distance between the seventh conductive film and the first region in the second direction is different from the distance between the seventh conductive film and the second region in the second direction. A light-emitting device in which, in a plan view, the second region is not located on a straight line that passes through the first region and extends in the first direction.

5. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a light-emitting element, and a capacitive element. Each of the first transistor and the second transistor has an oxide semiconductor in the channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the distance between the seventh conductive film and the first region in a second direction perpendicular to the first direction is different from the distance between the seventh conductive film and the second region in the second direction. In a plan view, the gap between the fifth conductive film and the sixth conductive film has a region located between a first straight line extending in the first direction through the first region and a second straight line extending in the first direction through the second region.

6. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a light-emitting element, and a capacitive element. Each of the first transistor and the second transistor has an oxide semiconductor in the channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the light-emitting element of the first sub-pixel and the light-emitting element of the second sub-pixel are arranged side by side in a second direction perpendicular to the first direction. In a plan view, the distance between the seventh conductive film and the first region in the second direction is different from the distance between the seventh conductive film and the second region in the second direction. In a plan view, the gap between the fifth conductive film and the sixth conductive film has a region located between a first straight line extending in the first direction through the first region and a second straight line extending in the first direction through the second region.

7. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a light-emitting element, and a capacitive element. Each of the first transistor and the second transistor has an oxide semiconductor in the channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the distance between the seventh conductive film and the second region in a second direction perpendicular to the first direction is shorter than the distance between the seventh conductive film and the first region in the second direction. A light-emitting device wherein the sixth conductive film overlaps with the second conductive film.

8. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a light-emitting element, and a capacitive element. Each of the first transistor and the second transistor has an oxide semiconductor in the channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the light-emitting element of the first sub-pixel and the light-emitting element of the second sub-pixel are arranged side by side in a second direction perpendicular to the first direction. In a plan view, the distance between the seventh conductive film and the second region in the second direction is shorter than the distance between the seventh conductive film and the first region in the second direction. A light-emitting device wherein the sixth conductive film overlaps with the second conductive film.

9. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a light-emitting element, and a capacitive element. Each of the first transistor and the second transistor has an oxide semiconductor in the channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the second region is not located on a straight line that passes through the first region and extends in the first direction. In a plan view, the distance between the seventh conductive film and the second region in a second direction perpendicular to the first direction is shorter than the distance between the seventh conductive film and the first region in the second direction. A light-emitting device wherein the sixth conductive film overlaps with the second conductive film.

10. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a light-emitting element, and a capacitive element. Each of the first transistor and the second transistor has an oxide semiconductor in the channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the light-emitting element of the first sub-pixel and the light-emitting element of the second sub-pixel are arranged side by side in a second direction perpendicular to the first direction. In a plan view, the second region is not located on a straight line that passes through the first region and extends in the first direction. In a plan view, the distance between the seventh conductive film and the second region in the second direction is shorter than the distance between the seventh conductive film and the first region in the second direction. A light-emitting device wherein the sixth conductive film overlaps with the second conductive film.

11. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a light-emitting element, and a capacitive element. Each of the first transistor and the second transistor has an oxide semiconductor in the channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the gap between the fifth conductive film and the sixth conductive film has a region located between a first straight line extending in the first direction through the first region and a second straight line extending in the first direction through the second region. In a plan view, the distance between the seventh conductive film and the second region in a second direction perpendicular to the first direction is shorter than the distance between the seventh conductive film and the first region in the second direction. A light-emitting device wherein the sixth conductive film overlaps with the second conductive film.

12. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a light-emitting element, and a capacitive element. Each of the first transistor and the second transistor has an oxide semiconductor in the channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the light-emitting element of the first sub-pixel and the light-emitting element of the second sub-pixel are arranged side by side in a second direction perpendicular to the first direction. In a plan view, the gap between the fifth conductive film and the sixth conductive film has a region located between a first straight line extending in the first direction through the first region and a second straight line extending in the first direction through the second region. In a plan view, the distance between the seventh conductive film and the second region in the second direction is shorter than the distance between the seventh conductive film and the first region in the second direction. A light-emitting device wherein the sixth conductive film overlaps with the second conductive film.

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