Film-forming composition and method for manufacturing semiconductor substrate
A film-forming composition with aromatic compounds and solvents forms a capping film to address surface roughness issues during annealing, enhancing the quality of semiconductor substrates for future high-performance devices.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- JSR CORPORATION
- Filing Date
- 2022-06-07
- Publication Date
- 2026-06-30
AI Technical Summary
Existing semiconductor manufacturing processes face challenges in suppressing surface roughness during high-temperature annealing, which affects the reliability and performance of semiconductor devices, particularly for wide-bandgap materials like silicon carbide and gallium nitride.
A film-forming composition containing compounds with aromatic rings and specific solvents is used to create a capping film during the annealing process, ensuring high flatness and quality of the semiconductor substrate surface.
The composition enables the formation of a capping film that imparts high flatness to the substrate surface during high-temperature annealing, resulting in high-quality semiconductor substrates suitable for advanced semiconductor devices.
Smart Images

Figure 0007881997000001 
Figure 0007881997000002 
Figure 0007881997000003