Cleaning composition
A cleaning composition with specific components addresses the challenge of residue removal and corrosion protection in post-CMP processes, ensuring effective residue removal and surface integrity for copper and low-k materials in semiconductor manufacturing.
JP7917717B2Active Publication Date: 2026-09-08ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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Patent Information
- Application Number
- JP2025522657
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2022-10-18
- Filing Date
- 2023-10-12
- Publication Date
- 2026-09-08
- Estimated Expiration
- 2043-10-12
AI Technical Summary
Technical Problem
Conventional cleaning compositions for post-CMP processes in semiconductor manufacturing fail to effectively remove wafer surface residues while providing adequate corrosion protection for copper wiring and low-k materials, which can impair subsequent processes and performance.
Method used
A cleaning composition comprising a basic compound, alcohol amine, corrosion inhibitor, and chelating agent, with specific components and concentrations, effectively removes residues and protects copper and low-k materials.
Benefits of technology
The composition achieves effective residue removal, suppresses metal etching rates, maintains surface morphology, and ensures a wide process window for semiconductor manufacturing.
✦ Generated by Eureka AI based on patent content.
Abstract
The present invention relates to a cleaning composition, specifically comprising a basic compound, an alcohol amine, a corrosion inhibitor, a chelating agent, and a solvent. The positive effects of the present invention include the effective removal of post-CMP wafer surface residues, non-corrosiveness to copper wiring and low-k materials, and a wide process window, and are expected to be widely used in semiconductor post-CMP cleaning processes.
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