Micro-led and micro-led chip
By using an atomic layer deposition layer and platinum-titanium stacks to block metal diffusion and oxidation in micro LEDs, the reflectivity and reliability of reflective mirror layers are maintained, addressing issues in existing micro LED technologies.
Patent Information
- Application Number
- TW115102966
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-01-26
- Filing Date
- 2026-01-26
- Publication Date
- 2026-08-01
AI Technical Summary
Micro light-emitting diodes (LEDs) face issues with metal diffusion and oxidation in reflective mirror layers, which affect reflectivity and can cause short circuits, particularly with silver-based reflective materials.
Incorporating an atomic layer deposition layer on the reflector layer facing the light-emitting mesa to block metal diffusion, combined with alternating stacks of platinum and titanium layers as barrier layers to prevent oxidation and diffusion, and optimizing the epitaxial layer structure to increase surface area and thickness.
The solution effectively suppresses metal diffusion and oxidation, maintaining reflectivity and preventing short circuits, thereby enhancing the performance and efficiency of micro LEDs.