Device, preparation method, and electronic device

By providing a plurality of laminated metal atomic layers and a liner layers of metal nitride atomic layers between the dielectric layer of the integrated circuit and the metal interconnection layer, the problem of insufficient adhesion of copper interconnection technology in small size and high density devices is solved, and the effect of reducing resistivity is achieved.

WO2024240187A9 Publication Date: 2025-03-20HUAWEI TECH CO LTD
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Patent Information

Application Number
PCT/CN2024/094709
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-05-24
Filing Date
2024-05-22
Publication Date
2025-03-20

AI Technical Summary

Technical Problem

In integrated circuit manufacturing, with the decline of technology nodes, copper interconnection technology based on Damascus process is difficult to meet the requirements of smaller size and higher density devices, especially in dielectric layers of low dielectric constant materials, the adhesion between copper and alternative materials such as ruthenium is insufficient, resulting in an increase in resistivity.

Method used

By providing a plurality of liner layers between the metal interconnect layer and the dielectric layer, each liner layer including a layer of arranged metal atoms and a metal nitride atoms layer stacked, the doping ratios of metal materials of adjacent liner layers are different to improve adhesion and reduce resistivity.

Benefits of technology

It effectively improves the adhesion between the metal interconnect layer and the dielectric layer, reduces the overall resistivity, and solves the limitations encountered by copper interconnect technology in small-size and high-density devices.

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Abstract

Disclosed in the embodiments of the present application are a device, a preparation method, and an electronic device. A plurality of lining layers are arranged between a metal interconnection layer and a dielectric layer in a stacked manner, and each lining layer comprises m first atomic layers and n second atomic layers, which are arranged in a stacked manner, wherein the second atomic layers are made of a metal nitride material, so that the adhesion between the metal interconnection layer and the dielectric layer can be improved by adding the second atomic layers. In addition, the first atomic layers are made of a metal material. The resistivity of the metal material is relatively low, and therefore, with regard to lining layers having the same thickness, both the first atomic layers and the second atomic layers are arranged, and the metal material is doped in the lining layer, such that the overall resistivity of the second atomic layers doped with the metal material is reduced, and the resistivity of each lining layer is also reduced.
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