Algan-based deep ultraviolet LED and method for manufacturing the same

Abstract

The present invention enhances light extraction efficiency (LEE) in a 230 nm band UVC-LED. This AlGaN-based deep ultraviolet LED having a light emission wavelength λ has a photonic crystal periodic structure in a thickness direction, wherein the distance between an upper part of a quantum well layer and a bottom part of the photonic crystal periodic structure substantially satisfies a resonance condition λ / n of free end reflection. Here, n is the weighted average refractive index of a layer structure existing between the upper part of the quantum well layer and the bottom part of the photonic crystal periodic structure.