Systems and methods for selective metal-containing hardmask removal

The method selectively removes metal-containing hardmask materials in semiconductor processing by using specific etchant precursors and processing conditions, addressing the challenges of pattern protection and selectivity in existing technologies.

WO2025058868A1 Publication Date: 2025-03-20APPLIED MATERIALS INC
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Patent Information

Application Number
PCT/US2024/044707
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-09-11
Filing Date
2024-08-30
Publication Date
2025-03-20

AI Technical Summary

Technical Problem

Existing semiconductor processing technologies face challenges in selectively removing metal-containing hardmask materials without damaging surrounding structures or causing pattern deformation, especially in high aspect ratio features.

Method used

The method involves flowing an etchant precursor into a semiconductor processing chamber, where a substrate with exposed metal-containing hardmask material and other materials is contacted, allowing for the selective removal of the hardmask material without plasma, at elevated temperatures and pressures, and using specific precursors to control etch rates and selectivity.

Benefits of technology

This approach enables the selective removal of metal-containing hardmask materials relative to other materials on the substrate, protecting delicate structures and improving etching access in small pitch features, with enhanced selectivity and control over etch processes.

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Abstract

Exemplary semiconductor processing methods may include flowing an etchant precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may define an exposed region of a metal-containing hardmask material and an exposed region of a material characterized by a dielectric constant of less than or about 4.0. The methods may include contacting the substrate with the etchant precursor. The methods may include removing at least a portion of the metal-containing hardmask material.
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