Semiconductor device

WO2025062713A1 Publication Date: 2025-03-27KK TOSHIBA +1
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Patent Information

Application Number
PCT/JP2024/013822
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-09-19
Filing Date
2024-04-03
Publication Date
2025-03-27
Patent Text Reader

Abstract

According to an embodiment of the present invention, a semiconductor device includes: a first substrate provided with a first electrode, a second electrode, and a third electrode; a second substrate provided with a fourth electrode, a fifth electrode, and a sixth electrode and disposed side by side with the first substrate in a first direction; a first transistor having a drain connected to the first electrode, a gate connected to the second electrode, and a source connected to the third electrode; a second transistor having a drain connected to the fourth electrode, a gate connected to the fifth electrode, and a source connected to the sixth electrode; a first wiring connecting the second electrode and the fifth electrode in a meandering manner in a second direction; and a second wiring connecting the third electrode and the sixth electrode in a meandering manner in the second direction.
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