Plasma source with multiple extraction apertures
The plasma source with multiple non-co-planar extraction apertures addresses the inefficiencies of existing systems by enabling symmetric 3D feature processing in a single pass, achieving high angles and flux.
Patent Information
- Application Number
- PCT/US2024/039571
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-09-19
- Filing Date
- 2024-07-25
- Publication Date
- 2025-03-27
AI Technical Summary
Existing plasma sources for semiconductor processing often require multiple scanning passes and rotations to symmetrically process 3D features, which is time-consuming and inefficient, and struggle to achieve high angles with small angle distribution and high flux.
A plasma source with multiple extraction apertures, where the apertures are not co-planar, allowing a workpiece to be scanned and processed from two different directions simultaneously, thereby enabling symmetric processing of 3D features during a single pass.
This configuration allows for efficient symmetric processing of 3D features in a single scan pass, achieving high angles with small angle distribution and high flux, thereby improving processing throughput and efficiency.