Dual work function word line for 4f 2
The dual work function word line, with low and high work function materials strategically positioned, addresses the floating body effect in 4F2 DRAM devices by reducing leakage currents and maintaining threshold voltage, enhancing the performance of 4F2 DRAM devices.
WO2025064328A1 Publication Date: 2025-03-27APPLIED MATERIALS INC
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Patent Information
- Application Number
- PCT/US2024/046843
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-09-21
- Filing Date
- 2024-09-16
- Publication Date
- 2025-03-27
AI Technical Summary
Technical Problem
The 4F2 DRAM design faces challenges due to the floating body effect, leading to off-leakage current issues and gate-induced drain leakage, which are not effectively addressed by existing technologies.
Method used
A dual work function word line is introduced, featuring a low work function material adjacent to the source/drain regions and a high work function material adjacent to the channel regions, to maintain a high threshold voltage and reduce leakage currents.
Benefits of technology
The dual work function word line effectively reduces off-leakage current and gate-induced drain leakage while maintaining the necessary threshold voltage, thereby addressing the floating body effect in 4F2 DRAM devices.
✦ Generated by Eureka AI based on patent content.
Abstract
A present technology is generally directed to vertical cell array transistors (VCAT) and methods of forming such VCATs. VCATs may include one or more bit lines arranged in a first horizontal direction, one or more word lines arranged in a second horizontal direction, and one or more channels extending in a vertical direction that is generally orthogonal to the first horizontal direction and the second horizontal direction such that the one or more bit lines intersect with a source / drain region of the one or more channels and the one or more word lines intersect with a gate region of the one or more channels. VCATs include where at least one word line of the one or more word lines includes a first section adjacent to the source / drain region and a second section adjacent to the gate region. The second section includes a high work function material and the first section includes a low work function material.
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