Millimeter wave transmission layer

WO2026126896A1PCT designated stage Publication Date: 2026-06-18TOPPAN HOLDINGS INC

Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
TOPPAN HOLDINGS INC
Filing Date
2025-12-03
Publication Date
2026-06-18

AI Technical Summary

Technical Problem

Existing materials used in millimeter-wave transmitting components often lack high transmittance across a wide frequency band, limiting the selection of suitable materials for protecting millimeter-wave transmitters and receivers from the external environment.

Method used

A millimeter-wave transmission layer composed of a conductive pattern with specific design parameters, including a relative permittivity less than 1 across a defined frequency range, is integrated with a dielectric layer to enhance transmittance and structural stability.

🎯Benefits of technology

The solution expands the material selection for millimeter-wave components, ensuring high transmittance and structural integrity across a wide frequency band, addressing the limitations of existing materials.

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Abstract

Provided is a technology capable of expanding the selection of materials usable for a millimeter wave transmission unit of a member that covers a millimeter wave transmitter or a millimeter wave receiver. This millimeter wave transmission layer is installed on a member including a dielectric layer, constitutes a composite member together with the member, and is composed of a conductor pattern (12A). In a state of being embedded in the composite member, the millimeter wave transmission layer has a relative dielectric constant of less than 1 in the entire frequency band from a first frequency F min or higher and a second frequency F max or lower. Each of the first frequency F min and the second frequency F max is within a range of 20 GHz or higher and 300 GHz or lower, and the difference between the second frequency F max and the first frequency F min is 0.2 GHz or higher.
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