Ceramic Substrates Vs AlN Substrates: Suitability For Microelectronics
MAY 26, 20269 MIN READ
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Ceramic vs AlN Substrate Technology Background and Objectives
The evolution of substrate materials in microelectronics has been driven by the relentless pursuit of higher performance, miniaturization, and thermal management capabilities. Traditional ceramic substrates, primarily composed of alumina (Al2O3), have served as the foundation for electronic packaging for decades due to their mechanical stability, electrical insulation properties, and cost-effectiveness. However, the exponential growth in power density and operating frequencies of modern electronic devices has exposed the limitations of conventional ceramic materials, particularly in thermal conductivity and high-frequency performance.
Aluminum nitride (AlN) substrates emerged as a revolutionary alternative in the late 1980s and early 1990s, addressing critical thermal management challenges that conventional ceramics could not adequately resolve. The development of AlN technology was initially motivated by the semiconductor industry's need for substrates capable of efficiently dissipating heat from high-power devices while maintaining excellent electrical insulation properties. This technological shift represented a paradigm change from prioritizing mechanical and electrical properties to emphasizing thermal performance as a primary design criterion.
The historical trajectory of substrate technology reflects broader trends in microelectronics, where Moore's Law and the continuous scaling of semiconductor devices have created increasingly demanding requirements for packaging materials. Early ceramic substrates were sufficient for low-power applications, but the advent of high-power LEDs, RF amplifiers, and power electronics necessitated materials with superior thermal conductivity. AlN's thermal conductivity of approximately 170-200 W/mK compared to alumina's 20-30 W/mK represents a fundamental advancement in substrate capability.
The primary objective of comparing ceramic and AlN substrates centers on identifying optimal material selection criteria for specific microelectronic applications. This evaluation encompasses thermal management efficiency, electrical performance at high frequencies, mechanical reliability under thermal cycling, and cost-effectiveness across different application domains. Understanding these trade-offs is crucial for engineers designing next-generation electronic systems where substrate choice directly impacts device performance, reliability, and commercial viability.
Contemporary research objectives focus on advancing both material systems through innovative processing techniques, composite structures, and hybrid approaches that combine the advantages of each technology. The goal extends beyond simple material substitution to developing comprehensive substrate solutions that address the multifaceted challenges of modern microelectronics, including electromagnetic interference, thermal expansion matching, and manufacturing scalability.
Aluminum nitride (AlN) substrates emerged as a revolutionary alternative in the late 1980s and early 1990s, addressing critical thermal management challenges that conventional ceramics could not adequately resolve. The development of AlN technology was initially motivated by the semiconductor industry's need for substrates capable of efficiently dissipating heat from high-power devices while maintaining excellent electrical insulation properties. This technological shift represented a paradigm change from prioritizing mechanical and electrical properties to emphasizing thermal performance as a primary design criterion.
The historical trajectory of substrate technology reflects broader trends in microelectronics, where Moore's Law and the continuous scaling of semiconductor devices have created increasingly demanding requirements for packaging materials. Early ceramic substrates were sufficient for low-power applications, but the advent of high-power LEDs, RF amplifiers, and power electronics necessitated materials with superior thermal conductivity. AlN's thermal conductivity of approximately 170-200 W/mK compared to alumina's 20-30 W/mK represents a fundamental advancement in substrate capability.
The primary objective of comparing ceramic and AlN substrates centers on identifying optimal material selection criteria for specific microelectronic applications. This evaluation encompasses thermal management efficiency, electrical performance at high frequencies, mechanical reliability under thermal cycling, and cost-effectiveness across different application domains. Understanding these trade-offs is crucial for engineers designing next-generation electronic systems where substrate choice directly impacts device performance, reliability, and commercial viability.
Contemporary research objectives focus on advancing both material systems through innovative processing techniques, composite structures, and hybrid approaches that combine the advantages of each technology. The goal extends beyond simple material substitution to developing comprehensive substrate solutions that address the multifaceted challenges of modern microelectronics, including electromagnetic interference, thermal expansion matching, and manufacturing scalability.
Market Demand Analysis for Advanced Microelectronic Substrates
The global microelectronics industry is experiencing unprecedented growth driven by the proliferation of high-performance computing, 5G telecommunications, electric vehicles, and advanced power electronics systems. This expansion has created substantial demand for substrate materials that can effectively manage thermal challenges while maintaining electrical performance in increasingly compact device architectures.
Traditional ceramic substrates, including alumina and aluminum nitride variants, have dominated the market due to their established manufacturing processes and cost-effectiveness. However, the industry is witnessing a significant shift toward specialized materials as device power densities continue to escalate and thermal management requirements become more stringent.
The power electronics segment represents the largest demand driver for advanced substrates, particularly in applications requiring superior thermal conductivity. Electric vehicle inverters, renewable energy systems, and industrial motor drives are pushing the boundaries of substrate performance requirements. These applications demand materials capable of dissipating heat efficiently while maintaining dimensional stability under thermal cycling conditions.
Telecommunications infrastructure, especially 5G base stations and RF amplifiers, constitutes another major market segment driving substrate innovation. The higher frequencies and power levels associated with next-generation wireless technologies necessitate substrates with excellent thermal properties and low dielectric losses. This has accelerated adoption of premium substrate materials despite their higher initial costs.
The consumer electronics sector, while traditionally cost-sensitive, is increasingly adopting advanced substrates for high-end applications. Gaming hardware, cryptocurrency mining equipment, and premium mobile devices are incorporating substrates with enhanced thermal performance to support higher processing speeds and improved reliability.
Market dynamics indicate a clear trend toward substrate materials offering superior thermal conductivity, with aluminum nitride gaining significant traction despite its higher manufacturing complexity. The automotive electronics segment is particularly influential in driving this transition, as electric vehicle adoption accelerates globally and thermal management becomes critical for battery management systems and power conversion units.
Regional demand patterns show strong growth in Asia-Pacific markets, driven by semiconductor manufacturing concentration and electric vehicle production expansion. North American and European markets are focusing on high-performance applications where substrate quality and reliability take precedence over cost considerations, creating opportunities for premium substrate technologies.
Traditional ceramic substrates, including alumina and aluminum nitride variants, have dominated the market due to their established manufacturing processes and cost-effectiveness. However, the industry is witnessing a significant shift toward specialized materials as device power densities continue to escalate and thermal management requirements become more stringent.
The power electronics segment represents the largest demand driver for advanced substrates, particularly in applications requiring superior thermal conductivity. Electric vehicle inverters, renewable energy systems, and industrial motor drives are pushing the boundaries of substrate performance requirements. These applications demand materials capable of dissipating heat efficiently while maintaining dimensional stability under thermal cycling conditions.
Telecommunications infrastructure, especially 5G base stations and RF amplifiers, constitutes another major market segment driving substrate innovation. The higher frequencies and power levels associated with next-generation wireless technologies necessitate substrates with excellent thermal properties and low dielectric losses. This has accelerated adoption of premium substrate materials despite their higher initial costs.
The consumer electronics sector, while traditionally cost-sensitive, is increasingly adopting advanced substrates for high-end applications. Gaming hardware, cryptocurrency mining equipment, and premium mobile devices are incorporating substrates with enhanced thermal performance to support higher processing speeds and improved reliability.
Market dynamics indicate a clear trend toward substrate materials offering superior thermal conductivity, with aluminum nitride gaining significant traction despite its higher manufacturing complexity. The automotive electronics segment is particularly influential in driving this transition, as electric vehicle adoption accelerates globally and thermal management becomes critical for battery management systems and power conversion units.
Regional demand patterns show strong growth in Asia-Pacific markets, driven by semiconductor manufacturing concentration and electric vehicle production expansion. North American and European markets are focusing on high-performance applications where substrate quality and reliability take precedence over cost considerations, creating opportunities for premium substrate technologies.
Current Status and Challenges in Substrate Material Selection
The microelectronics industry currently faces significant challenges in substrate material selection, with ceramic substrates and aluminum nitride (AlN) substrates representing two primary pathways for advanced packaging applications. Traditional ceramic substrates, including alumina-based materials, have dominated the market for decades due to their established manufacturing processes and cost-effectiveness. However, the increasing demand for higher power densities and improved thermal management in modern electronic devices has exposed limitations in conventional ceramic materials.
AlN substrates have emerged as a premium alternative, offering superior thermal conductivity compared to traditional ceramics. While alumina substrates typically exhibit thermal conductivity values of 20-30 W/mK, AlN substrates can achieve thermal conductivity exceeding 170 W/mK. This substantial difference has positioned AlN as the preferred choice for high-power applications, particularly in RF devices, power electronics, and LED packaging where efficient heat dissipation is critical.
Manufacturing scalability remains a significant challenge for both substrate types. Ceramic substrate production benefits from mature manufacturing infrastructure and established supply chains, enabling cost-effective mass production. Conversely, AlN substrate manufacturing requires specialized processing techniques, including controlled atmosphere sintering and precise chemical composition management, resulting in higher production costs and limited manufacturing capacity.
Material purity and defect control present ongoing technical challenges. AlN substrates are particularly sensitive to oxygen contamination during processing, which can significantly degrade thermal performance. Achieving consistent material properties across large substrate areas remains difficult, especially for AlN materials where even minor impurities can create thermal bottlenecks.
Cost considerations continue to influence substrate selection decisions significantly. While AlN substrates offer superior performance characteristics, their production costs remain 3-5 times higher than comparable ceramic alternatives. This cost differential limits AlN adoption primarily to high-value applications where thermal performance justifies the premium pricing.
The industry also faces challenges in substrate-to-package integration. Different thermal expansion coefficients between substrate materials and semiconductor devices can create reliability issues, particularly in temperature cycling applications. AlN's closer thermal expansion match to silicon provides advantages, but requires careful consideration of metallization and bonding processes to ensure long-term reliability.
AlN substrates have emerged as a premium alternative, offering superior thermal conductivity compared to traditional ceramics. While alumina substrates typically exhibit thermal conductivity values of 20-30 W/mK, AlN substrates can achieve thermal conductivity exceeding 170 W/mK. This substantial difference has positioned AlN as the preferred choice for high-power applications, particularly in RF devices, power electronics, and LED packaging where efficient heat dissipation is critical.
Manufacturing scalability remains a significant challenge for both substrate types. Ceramic substrate production benefits from mature manufacturing infrastructure and established supply chains, enabling cost-effective mass production. Conversely, AlN substrate manufacturing requires specialized processing techniques, including controlled atmosphere sintering and precise chemical composition management, resulting in higher production costs and limited manufacturing capacity.
Material purity and defect control present ongoing technical challenges. AlN substrates are particularly sensitive to oxygen contamination during processing, which can significantly degrade thermal performance. Achieving consistent material properties across large substrate areas remains difficult, especially for AlN materials where even minor impurities can create thermal bottlenecks.
Cost considerations continue to influence substrate selection decisions significantly. While AlN substrates offer superior performance characteristics, their production costs remain 3-5 times higher than comparable ceramic alternatives. This cost differential limits AlN adoption primarily to high-value applications where thermal performance justifies the premium pricing.
The industry also faces challenges in substrate-to-package integration. Different thermal expansion coefficients between substrate materials and semiconductor devices can create reliability issues, particularly in temperature cycling applications. AlN's closer thermal expansion match to silicon provides advantages, but requires careful consideration of metallization and bonding processes to ensure long-term reliability.
Current Technical Solutions for Microelectronic Substrates
01 AlN substrate thermal management properties
Aluminum nitride substrates offer excellent thermal conductivity and heat dissipation capabilities, making them suitable for high-power electronic applications. These substrates can effectively manage thermal stress and provide stable performance under elevated temperature conditions. The thermal expansion characteristics of AlN substrates can be optimized to match semiconductor devices for improved reliability.- AlN substrate thermal management properties: Aluminum nitride substrates offer excellent thermal conductivity and heat dissipation capabilities, making them suitable for high-power electronic applications. These substrates can effectively manage thermal stress and provide stable performance under elevated temperature conditions. The thermal expansion characteristics of AlN substrates can be optimized to match semiconductor devices for improved reliability.
- Ceramic substrate manufacturing and processing techniques: Various manufacturing methods are employed to produce ceramic substrates with desired properties, including sintering processes, powder metallurgy techniques, and surface treatment methods. These processing approaches enable the creation of substrates with controlled porosity, density, and surface roughness. Advanced fabrication techniques allow for precise dimensional control and improved substrate quality.
- Substrate material composition and structure optimization: The composition and microstructure of ceramic and AlN substrates can be tailored through the addition of dopants, fillers, and reinforcing materials. These modifications enhance mechanical strength, electrical properties, and thermal performance. Structural optimization includes grain size control, phase composition adjustment, and interface engineering to achieve specific application requirements.
- Electronic packaging and interconnection applications: Ceramic and AlN substrates serve as platforms for electronic component mounting and interconnection in various packaging applications. These substrates provide electrical isolation, mechanical support, and thermal management for semiconductor devices. The substrates can be designed with specific circuit patterns, via structures, and metallization layers to meet packaging requirements.
- Substrate surface treatment and metallization: Surface modification techniques are applied to ceramic and AlN substrates to improve adhesion, conductivity, and compatibility with electronic components. These treatments include metallization processes, surface roughening, and coating applications. The surface properties can be engineered to enhance bonding strength and ensure reliable electrical connections in electronic assemblies.
02 Ceramic substrate manufacturing and processing techniques
Various manufacturing methods are employed to produce ceramic substrates with desired properties, including sintering processes, powder preparation, and surface treatment techniques. These processing methods can control the microstructure, density, and mechanical properties of the ceramic materials. Advanced fabrication techniques enable the production of substrates with precise dimensions and improved performance characteristics.Expand Specific Solutions03 Electrical insulation and dielectric properties
Ceramic and AlN substrates provide excellent electrical insulation properties with high dielectric strength and low dielectric loss. These materials can maintain stable electrical characteristics across wide frequency ranges and temperature variations. The dielectric properties can be tailored through composition control and processing parameters to meet specific application requirements.Expand Specific Solutions04 Mechanical strength and reliability characteristics
Both ceramic and AlN substrates exhibit high mechanical strength, fracture toughness, and resistance to thermal shock. These materials can withstand mechanical stress during assembly and operation while maintaining structural integrity. The reliability characteristics include resistance to fatigue, corrosion, and environmental degradation under various operating conditions.Expand Specific Solutions05 Application-specific substrate design and optimization
Substrate design considerations include thickness optimization, surface roughness control, and integration with electronic components. Different applications require specific substrate configurations to achieve optimal performance in terms of heat dissipation, electrical performance, and mechanical stability. Design parameters can be customized based on the intended use in power electronics, LED packaging, or other electronic applications.Expand Specific Solutions
Major Players in Substrate Manufacturing Industry
The ceramic substrates versus aluminum nitride (AlN) substrates market for microelectronics represents a mature yet rapidly evolving competitive landscape driven by increasing thermal management demands in 5G, automotive electronics, and power modules. The industry is experiencing significant growth with market expansion fueled by electric vehicle adoption and high-power semiconductor applications. Technology maturity varies considerably across players, with established giants like NGK Corp., Toshiba Corp., and Shin-Etsu Chemical leading in traditional ceramic substrates, while specialized companies such as Nitride Global Inc., U-MAP Co. Ltd., and Fujian Huaqing Electronic Material Technology demonstrate advanced AlN processing capabilities. Chinese manufacturers including Fujian Zhenjing New Material Technology and research institutions like Tsinghua University are rapidly advancing AlN substrate technologies, intensifying global competition and driving innovation in thermal conductivity and electrical insulation properties for next-generation microelectronic applications.
NGK Corp.
Technical Solution: NGK Corporation specializes in advanced ceramic substrate technologies, particularly alumina (Al2O3) and aluminum nitride (AlN) substrates for microelectronics applications. Their ceramic substrates offer excellent electrical insulation properties with dielectric constants ranging from 8-10 for alumina, making them suitable for high-frequency applications. The company's AlN substrates provide superior thermal conductivity of 150-200 W/mK, significantly higher than traditional alumina substrates at 20-30 W/mK. NGK's manufacturing processes include thick film and thin film deposition techniques, enabling precise circuit patterning for power electronics, LED packaging, and RF modules. Their substrates demonstrate excellent dimensional stability and low thermal expansion coefficients, crucial for reliable microelectronic device performance under thermal cycling conditions.
Strengths: Market leadership in ceramic substrates, proven manufacturing scalability, excellent thermal management solutions. Weaknesses: Higher material costs compared to organic substrates, limited flexibility in design modifications.
Shin-Etsu Chemical Co., Ltd.
Technical Solution: Shin-Etsu Chemical develops high-purity aluminum nitride substrates specifically engineered for microelectronics applications requiring superior thermal management. Their AlN substrates achieve thermal conductivity values exceeding 180 W/mK while maintaining excellent electrical insulation properties with breakdown voltages above 15 kV/mm. The company's proprietary sintering processes produce substrates with low porosity and uniform grain structure, ensuring consistent performance across large substrate areas. Shin-Etsu's AlN technology addresses critical challenges in power semiconductor packaging, where efficient heat dissipation is essential for device reliability. Their substrates feature low dielectric loss and stable electrical properties across wide temperature ranges, making them ideal for high-power RF applications and automotive electronics where thermal cycling is severe.
Strengths: Superior thermal conductivity, excellent electrical properties, high-quality manufacturing processes. Weaknesses: Premium pricing, complex processing requirements, limited availability for small-volume applications.
Key Innovations in Ceramic and AlN Substrate Technologies
Ceramic substrate and sintered aluminum nitride
PatentInactiveUS20040142153A1
Innovation
- Incorporating boron into the nitride ceramics to repair or interfere with lattice defects caused by oxygen, maintaining a volume resistivity of at least 10^8 Ω.cm at 500°C, with optimal boron content between 0.01 and 50 ppm, and oxygen content between 0.1 and 5 weight%, preventing the reduction in volume resistivity.
Aluminum nitride sintered substrate, method for producing same, and insulating substrate for electronic circuit
PatentWO2025197258A1
Innovation
- A zirconium-containing aluminum nitride sintered substrate is developed with a zirconium-deficient surface layer and controlled particle size distribution, mitigating electric field concentration and enhancing insulation properties through a unique dispersion morphology of zirconium-containing particles.
Thermal Management Standards for Microelectronic Applications
Thermal management in microelectronic applications requires adherence to stringent standards that govern heat dissipation, temperature uniformity, and thermal cycling performance. The selection between ceramic substrates and aluminum nitride (AlN) substrates must align with established thermal management protocols to ensure reliable operation across diverse operating conditions.
Industry standards such as JEDEC JESD51 series and IPC-2221 define critical thermal parameters including thermal resistance, junction-to-case thermal impedance, and maximum allowable temperature gradients. These standards establish baseline requirements for substrate materials, mandating thermal conductivity values, coefficient of thermal expansion (CTE) matching, and thermal shock resistance specifications that directly influence substrate selection criteria.
For high-power microelectronic applications, thermal management standards typically require substrate materials to maintain thermal conductivity above 150 W/mK while exhibiting CTE values within 20% of semiconductor materials. AlN substrates, with thermal conductivity ranging from 170-220 W/mK and CTE of 4.6 ppm/°C, often exceed these baseline requirements, making them suitable for applications demanding superior heat dissipation performance.
Conventional ceramic substrates, particularly alumina-based materials, present thermal conductivity values between 20-35 W/mK, which may satisfy standards for moderate power applications but fall short of requirements for high-density packaging scenarios. The thermal management standards for such applications often specify maximum junction temperatures below 125°C, necessitating enhanced heat spreading capabilities that favor AlN implementation.
Compliance with automotive electronics standards (AEC-Q100) and aerospace thermal management protocols (MIL-STD-883) introduces additional constraints regarding thermal cycling endurance and temperature shock resistance. These standards mandate substrate materials to withstand temperature excursions from -55°C to +150°C without degradation, influencing material selection based on thermal expansion compatibility and mechanical stability under thermal stress conditions.
Industry standards such as JEDEC JESD51 series and IPC-2221 define critical thermal parameters including thermal resistance, junction-to-case thermal impedance, and maximum allowable temperature gradients. These standards establish baseline requirements for substrate materials, mandating thermal conductivity values, coefficient of thermal expansion (CTE) matching, and thermal shock resistance specifications that directly influence substrate selection criteria.
For high-power microelectronic applications, thermal management standards typically require substrate materials to maintain thermal conductivity above 150 W/mK while exhibiting CTE values within 20% of semiconductor materials. AlN substrates, with thermal conductivity ranging from 170-220 W/mK and CTE of 4.6 ppm/°C, often exceed these baseline requirements, making them suitable for applications demanding superior heat dissipation performance.
Conventional ceramic substrates, particularly alumina-based materials, present thermal conductivity values between 20-35 W/mK, which may satisfy standards for moderate power applications but fall short of requirements for high-density packaging scenarios. The thermal management standards for such applications often specify maximum junction temperatures below 125°C, necessitating enhanced heat spreading capabilities that favor AlN implementation.
Compliance with automotive electronics standards (AEC-Q100) and aerospace thermal management protocols (MIL-STD-883) introduces additional constraints regarding thermal cycling endurance and temperature shock resistance. These standards mandate substrate materials to withstand temperature excursions from -55°C to +150°C without degradation, influencing material selection based on thermal expansion compatibility and mechanical stability under thermal stress conditions.
Environmental Impact Assessment of Substrate Manufacturing
The manufacturing processes for ceramic substrates and aluminum nitride (AlN) substrates present distinct environmental challenges that significantly impact their suitability for microelectronics applications. Traditional ceramic substrates, primarily composed of alumina (Al2O3), require high-temperature sintering processes typically ranging from 1500°C to 1700°C, resulting in substantial energy consumption and carbon emissions. The raw material extraction for alumina involves bauxite mining, which generates considerable environmental disruption through habitat destruction and water contamination.
AlN substrate manufacturing presents a more complex environmental profile due to the specialized synthesis requirements. The production of aluminum nitride powder involves carbothermal reduction or direct nitridation processes, both requiring temperatures exceeding 1800°C and controlled nitrogen atmospheres. These processes consume significantly more energy per unit mass compared to traditional ceramic manufacturing, contributing to higher greenhouse gas emissions during production phases.
Water usage patterns differ substantially between the two manufacturing approaches. Ceramic substrate production typically requires extensive washing and cleaning cycles, generating wastewater containing suspended particles and chemical residues. AlN manufacturing involves fewer aqueous processes but requires specialized handling of nitrogen compounds, potentially creating different waste stream compositions that demand specific treatment protocols.
The chemical precursors used in AlN synthesis, including aluminum metal powders and carbon sources, often involve more energy-intensive upstream processing compared to the relatively straightforward alumina preparation. This upstream impact extends the environmental footprint beyond the immediate manufacturing facility, encompassing mining, refining, and transportation activities.
Waste generation characteristics also vary significantly between the two substrate types. Ceramic substrate manufacturing produces primarily inert ceramic waste that can often be recycled or repurposed. AlN production generates specialized waste containing nitrogen compounds that may require controlled disposal methods, potentially increasing long-term environmental management costs.
The geographic distribution of manufacturing facilities influences transportation-related emissions, with AlN production concentrated in regions with specialized technical capabilities, potentially increasing supply chain carbon footprints compared to the more globally distributed ceramic substrate manufacturing infrastructure.
AlN substrate manufacturing presents a more complex environmental profile due to the specialized synthesis requirements. The production of aluminum nitride powder involves carbothermal reduction or direct nitridation processes, both requiring temperatures exceeding 1800°C and controlled nitrogen atmospheres. These processes consume significantly more energy per unit mass compared to traditional ceramic manufacturing, contributing to higher greenhouse gas emissions during production phases.
Water usage patterns differ substantially between the two manufacturing approaches. Ceramic substrate production typically requires extensive washing and cleaning cycles, generating wastewater containing suspended particles and chemical residues. AlN manufacturing involves fewer aqueous processes but requires specialized handling of nitrogen compounds, potentially creating different waste stream compositions that demand specific treatment protocols.
The chemical precursors used in AlN synthesis, including aluminum metal powders and carbon sources, often involve more energy-intensive upstream processing compared to the relatively straightforward alumina preparation. This upstream impact extends the environmental footprint beyond the immediate manufacturing facility, encompassing mining, refining, and transportation activities.
Waste generation characteristics also vary significantly between the two substrate types. Ceramic substrate manufacturing produces primarily inert ceramic waste that can often be recycled or repurposed. AlN production generates specialized waste containing nitrogen compounds that may require controlled disposal methods, potentially increasing long-term environmental management costs.
The geographic distribution of manufacturing facilities influences transportation-related emissions, with AlN production concentrated in regions with specialized technical capabilities, potentially increasing supply chain carbon footprints compared to the more globally distributed ceramic substrate manufacturing infrastructure.
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