By Zone-Melting Liquids TRIZ Cases

Synchronized split laser pulses extend melting in a uniform line beam, improving polycrystalline silicon uniformity and reducing defects.

Localized laser heating at the solid-liquid interface maintains the temperature gradient needed to prevent compositional supercooling during crystal growth.

Image-based feedback and self-learning control keep the melting zone shape stable despite temperature and viscosity fluctuations.

A correction lens between the oscillator and beam expander reduces irradiation position displacement errors on semiconductor substrates.

A single crystal diameter detection system combines camera imaging with load cell weight data to determine real-time dimensions.

Segmenting the heating zone across multiple draw openings boosts productivity while reducing energy consumption per unit.

Model predictive control optimizes generator power and crystal speed during zone melting to maintain precise axial shape.

Radial slits in the graphite crucible wall allow electromagnetic energy penetration to melt silicon while preventing carbon contamination from direct contact.

A transparent complex oxide sintered body minimizes light absorption through controlled terbium ion valence.

A low-pass filter removes short period noise from diameter measurement data to enable precise pull speed control in single crystal ingot growth.

A computerized grading system evaluates round brilliant diamonds using brightness, fire, and scintillation scores to generate an overall cut grade.

A single-crystal production equipment uses infrared irradiation to control melt phase thickness and composition during solidification.

Vacuum electron beam melting and unidirectional solidification segregate metal impurities to achieve 5N to 7N polysilicon purity.

Multi-directional infrared irradiation means heat and melt large-diameter sample rods in a transparent quartz chamber for stable single crystal growth.