A thick insulating film redirects high electric field stress away from the gate oxide in an LDMOS body region, improving breakdown reliability.
Near-zero and zero-cross detection enable soft then hard MOSFET turn-on, cutting conduction loss, EMI, and overcurrent in active rectifiers.
An integrated ASIC PIN diode driver replaces external MOSFETs and slow voltage translation to deliver high current, wide back-bias range, and fast switching.
A diode between the on-driving circuit and IGBT gate suppresses resonance in parallel devices without the switching loss added by resistors.
A six-diode circular 3P3T switch replaces multiple SPDT and DPDT paths to save space, cut cost, and simplify multi-band routing.
A diode-transistor control circuit enables one-way MOSFET current flow while improving thermal tracking and reverse voltage stability.
Using a junction recovery diode and resonant circuits, this case generates sub-100 ns, 1 kV pulses with low jitter and high repetition rates.
A junction recovery diode and dual resonant circuits generate compact high-voltage nanosecond pulses with low jitter for cell electroperturbation.