Integrated PIN Diode Driver With Wide Back-Bias and Fast Switching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current systems lack a fully integrated high voltage PIN diode driver capable of handling high current requirements for high-energy signal systems, relying on discrete power MOSFETs and requiring external voltage translation, which is slow and inefficient.
Innovation Solution
A fully integrated ASIC PIN diode driver circuit using complementary pairs of MOSFETs and a voltage translator with a wide back bias voltage range, eliminating the need for external power MOSFETs and achieving low quiescent power consumption and fast switching speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If discrete power MOSFETs are used to achieve high current capability, then current capability is improved, but device complexity increases and integration is not achieved
Solution Approach 1:
The patent merges the power MOSFET functionality directly into the driver IC, combining the control logic and power switching elements into a single integrated device. This eliminates the need for external discrete MOSFETs while maintaining high current capability, thereby reducing overall system complexity and achieving full integration.
2Ease of operation
If discrete voltage translators are used to control high side power MOSFETs, then voltage translation is achieved, but switching speed decreases and quiescent power increases
Solution Approach 1:
The voltage translator functionality is merged into the driver IC itself, eliminating external discrete voltage translator components. This integration enables faster switching speeds and reduces quiescent power consumption while maintaining the necessary voltage translation capability for controlling high side power MOSFETs.
3Ease of operation
If resistor dividers are used for voltage translation, then voltage translation is achieved, but switching speed becomes very slow
Solution Approach 1:
The patent replaces the passive resistor divider mechanism with an active voltage translator circuit integrated into the driver IC. This substitution enables much faster voltage translation and switching speeds while maintaining the required voltage level translation for high side MOSFET control.
4Reliability
If bootstrap capacitors are used to form a charge pump, then full shutdown of high side MOSFETs is achieved, but quiescent power increases due to capacitor discharge over time
Solution Approach 1:
The driver IC incorporates self-service mechanisms including internal charge pumps and body diode utilization that eliminate the need for external bootstrap capacitors. The integrated charge pump automatically recharges internal nodes during switching transitions, and the body diodes provide natural discharge paths, thereby maintaining reliable MOSFET shutdown capability while minimizing quiescent power consumption without capacitor discharge losses.
Data Source
AI summary
An integrated circuit including a first circuit, a second circuit, a third circuit, a first complementary pair of transistors, and a second complementary pair of transistors. The first circuit may be configured to generate a first input signal in response to a first control input signal. The second circuit may be configured to generate a first output signal and a second output signal in response to the first input signal and a bias signal. The third circuit may be configured to generate the bias signal in response to a bias input signal. The first complementary pair of transistors may be configured to drive a first series output of the integrated circuit in response to the first output signal. The second complementary pair of transistors may be configured to drive a first shunt output of the integrated circuit in response to the second output signal.