Efficient Power Electronics Conversion TRIZ Cases
- SiC MOSFET P-Well Formation With Two-Step Ion Implantation
A two-step implantation uses easy- and difficult-to-diffuse regions to deepen the P-well while reducing SiC channel roughness and conductivity loss.
- RC-IGBT Punch-Through NPN and JFET Field Shielding
Punch-through NPN electron extraction and JFET field shielding address RC-IGBT reverse recovery loss and high-temperature leakage current.
- Shielded-Gate IGBT Structure for Faster Turn-Off
This IGBT uses differential body doping and staged shielded-gate control to remove stored carriers and speed turn-off.
- Shielded-Gate IGBT Structure for Reduced Turning-Off Loss
Shielded gates and segmented body doping speed channel turn-off, reducing carrier storage and IGBT switching loss.
- Semiconductor Device Barrier Protection to Reduce Thin-Layer Sheet Resistance
An amorphous InAlGaN layer shields thin barriers during insulating-layer formation, preserving 2DEG density and high-frequency behavior.