U6+-doped phosphate-vanadate phosphors emit narrow-band green light, solving broad peak limitations in LCD backlight units.
Optimized InGaZnO atomic ratios stabilize film formation against oxygen partial pressure variations, ensuring uniform carrier density and low resistance.
A low-temperature process produces mixed crystalline particles from column 13 and 15 precursors in a non-aqueous solvent medium.
Coexisting alkylcyclopentadiene stabilizes the indium precursor against disproportionation, enabling reliable film formation on large substrates.
A core shell particle with a Group II to Group III molar ratio of 2.7 or greater reduces exciton trapping and surface defects.
A new compound semiconductor material enhances energy conversion efficiency through optimized electrical and thermal properties.
A new compound semiconductor material enables high thermoelectric performance through optimized Seebeck coefficient and low thermal conductivity.