Compound Semiconductor for Thermoelectric Conversion
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Solution Overview
Problem
Conventional compound semiconductors fail to meet the requirements of high energy conversion efficiency, long-term stability, and cost-effectiveness for thermoelectric conversion devices and solar cells, particularly in terms of Seebeck coefficient, electric conductivity, and thermal conductivity.
Innovation Solution
A new compound semiconductor material represented by Chemical Formula In x M y Co 4-m-a A m Sb 12-n-z-b X n Te z is synthesized, where M is Zn or Cd, A is Fe, Ni, Ru, Rh, Pd, or Pt, X is Si, Ge, or Sn, and thermally treated to enhance thermoelectric and solar cell performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional compound semiconductors are used for thermoelectric conversion devices, then the device structure is simple and manufacturing is easy, but the energy conversion efficiency is insufficient due to inadequate Seebeck coefficient, electric conductivity, and thermal conductivity
Solution Approach 1:
The patent employs a composite material approach by combining multiple elements (In, Co, Sb, Te, and optional Zn, Cd, Fe, Ni, Ru, Rh, Pd, Pt, Si, Ge, Sn) to form a new compound semiconductor with formula In x Co 4-m-a Sb 12-n-z-b Te z. This composite structure allows simultaneous optimization of Seebeck coefficient, electric conductivity, and thermal conductivity, achieving high energy conversion efficiency while maintaining manufacturability through established synthesis methods.
Solution Approach 2:
The patent systematically varies compositional parameters (x, m, a, n, z, b) within specific ranges to optimize thermoelectric performance. By adjusting the ratios of constituent elements and controlling doping levels, the invention achieves precise control over electrical and thermal properties, resolving the contradiction between ease of manufacture and energy conversion efficiency.
2Use of energy by moving object
If compound semiconductors with high photoelectric conversion efficiency are developed, then the light absorption capability is improved, but the long-term electric and optical stability is insufficient
Solution Approach 1:
The patent uses a multi-element compound semiconductor structure that combines elements with complementary properties. The base compound In x Co 4-m-a Sb 12-n-z-b Te z provides a stable crystal structure, while dopants (Zn, Cd, Fe, Ni, Ru, Rh, Pd, Pt, Si, Ge, Sn) enhance photoelectric conversion efficiency. This composite approach maintains long-term electrical and optical stability while improving light absorption and charge carrier generation.
Solution Approach 2:
The patent applies local quality optimization by introducing specific dopants at controlled concentrations to enhance photoelectric properties without compromising overall structural stability. The dopants are strategically selected and positioned within the crystal lattice to improve charge carrier concentration and mobility locally, while the host structure maintains its stability for long-term operation.
3Power
If the Seebeck coefficient and electric conductivity are increased to improve ZT value, then the thermoelectric performance is enhanced, but the thermal conductivity increases which reduces energy conversion efficiency
Solution Approach 1:
The patent independently controls key thermoelectric parameters by adjusting compositional ratios. The formula In x Co 4-m-a Sb 12-n-z-b Te z allows separate optimization of carrier concentration (affecting Seebeck coefficient and electric conductivity) and lattice structure (affecting thermal conductivity). By varying x, m, a, n, z, and b within specified ranges, the invention achieves high ZT values while maintaining low thermal conductivity through phonon scattering mechanisms introduced by compositional complexity.
Solution Approach 2:
The multi-element compound semiconductor creates a complex crystal structure with multiple scattering centers for phonons, effectively reducing thermal conductivity. Simultaneously, the composite structure provides favorable electronic band structure for high Seebeck coefficient and electric conductivity, resolving the contradiction between improving ZT value and minimizing thermal conductivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The new compound semiconductor exhibits improved ZT value, low thermal conductivity, and high electric conductivity, making it suitable for thermoelectric conversion devices and solar cells with enhanced energy conversion efficiency and stability.
Implementation Method 1
a thermal electromotive force generated by applying a temperature difference to the thermoelectric conversion device is used for converting thermal energy to electric energy
Implementation Method 2
a compound semiconductor solar cell using a compound semiconductor in a light absorption layer which absorbs solar rays and generates an electron-hole pair
Data Source
AI summary
Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; 0<x<1; 0<y<1; 0≤m≤1; 0≤n<9; 0<z≤2; 0≤a≤1; 0<b≤3; and 0<n+z+b<12.