Heads Using Thin Films TRIZ Cases
- Nitrogen-Doped MgXO Barrier Layer for Lower Bandgap Stability
Cation-assisted nitrogen doping lowers MgO barrier bandgap without thinning, preserving thermal and electrical reliability in magnetic storage.
- BiSb Buffer and Interlayer Stack for Stable (012) Orientation
Buffer and interlayer materials suppress Sb migration in BiSb films, preserving (012) orientation, uniformity, and conductivity in SOT MTJs.
- Cation-Stabilized Nitrogen-Doped MgXO for Lower Bandgap Barriers
Adding cations enables nitrogen-doped MgXO barriers to lower bandgap without sacrificing thermal and electrical reliability in magnetic storage.
- BiSb Buffer and Interlayer Structure for Stable (012) Orientation
Buffer and interlayer stacks block Sb migration in BiSb films, preserving (012) orientation and uniformity for SOT MRAM devices.
- Doped CoFe Free Layer for Low-Coercivity TMR Sensors
Small Hf or Ta doping makes the CoFe free layer amorphous and magnetically soft, lowering coercivity while preserving TMR sensor sensitivity.