Lapping Machines TRIZ Cases

A chemical mechanical polishing apparatus uses independently rotating inner and outer platens to adjust material removal rates across the substrate.

Dynamic roll brush compression and periodic cleaning solution flow extend brush lifetime while reducing substrate defects.

A substrate polishing system uses a circular transfer orbit to move wafers between integrated cleaning and polishing stations.

Laser irradiation creates altered layers in hard sapphire substrates, allowing thinning below 50 μm and clean division without cracking.

A tachogenerator monitors slurry pump rotation speed deviations to prevent wafer scratching and thickness defects during semiconductor manufacturing.

Hydrophilic and hydrophobic membrane zones regulate capillary forces, preventing wafer slipping during polishing while enabling easy unloading.

Spray nozzles maintain wet states on atomizer and top ring head covers, preventing dried polishing liquid from contaminating substrates.

A CMP rotary body module uses independent magnetic driving members to tilt rotating units for precise wafer and retainer ring positioning.

A polishing apparatus uses a position sensor and elastic mechanism spring constant to control applied load.

A diagnostic device calculates polishing pad wear using height sensors and motor torque data.

A film-thickness measuring apparatus uses an optical-path selecting mechanism to switch light-receiving fibers for dynamic region adjustment.

Spiral heating and cooling flow passages in a pad contact member maintain stable polishing pad temperatures by controlling independent liquid flow rates.

A hybrid polishing-rate responsiveness profile combines simulation estimates with actual results to map pressure distribution across multiple chambers.

Discrete downforce actuators on a polishing head inner ring counteract pad flex and rebound, ensuring uniform film thickness.