Nanoinformatics TRIZ Cases
- GAA Nanowire Stack Channel Selection With 3D Active Region
A 3D active region and auxiliary buffer layer let GAA nanowire stacks choose channel strips without etching, preserving integrity and blocking leakage.
- Dipole-Moment Electrode Array for Precise Molecular Manipulation
Individually addressable electrodes create localized electric fields to translate, rotate, and hold dipole molecules with high precision.
- Source/Drain Contact Formation with N2/H2 Plasma Oxide Removal
N2/H2 plasma cleaning strips oxides from source/drain contacts, cutting resistance while preserving silicide and metal nitride barrier layers.
- Ferroelectric FET Multi-Channel Gates for Linear Weight Updates
Parallel channels with distinct gate work functions linearize FeFET conductivity changes, improving neural network weight update accuracy.
- Surrounding Silicide Contacts for Low-Resistance Epitaxial Structures
Wrapping silicide around epitaxial structures increases contact area and lowers resistance in scaled semiconductor devices.