Controlled oxygen at cBN grain interfaces strengthens WC-Co-Al bonded sintered material, reducing chipping and extending cutting tool life.
Ultrahigh-pressure conversion of hexagonal boron nitride creates binder-free polycrystalline CBN that resists edge wear and extends tool life.
Binder-free ultrahigh-pressure CBN sintering improves strength, thermal diffusivity, and edge wear resistance in difficult machining.
Preheated high-pressure boron nitride powder is sintered without binders to improve hardness, strength, and thermal stability for tools.
Doping AlN with Be, Sr, or Na suppresses transverse acoustic waves in BAW filters, improving frequency response and reducing signal interference.
Patterned metal nitride enables simultaneous AlN growth with piezoelectric and non-piezoelectric regions, balancing resonator function and heat dissipation.
A two-step pulsed DC reactive sputtering sequence cuts defects in Sc or Y-doped AlN films while preserving texture and coupling for RF resonators.
Partial gallium substitution in AlScN film raises remanent polarization while lowering coercive electric field for compact, low-power ferroelectric elements.
A patterned metal nitride layer controls AlN nucleation so one deposition yields piezoelectric regions and non-piezoelectric thermal paths.
Targeted AlN doping suppresses spurious acoustic waves in BAW resonators while improving coupling, quality factor, and frequency response.