Silicon Carbide TRIZ Cases
- Silicon Carbide Powder Purification by Thermal Fractionation
High-temperature treatment melts impurities on SiC waste so mechanical fractionation can recover powder with at least 98% purity.
- Bio-Silica Granules for High-Purity Silicon and SiC Production
Wet-treated rice hull bio-silica is calcined, micronized, and granulated to cut impurities, lower furnace demand, and raise silicon and SiC yield.
- Polymer-Derived Ceramic Resin Crosslinking for High Yield
Low-temperature free-radical crosslinking of a boron-containing resin boosts ceramic yield to 80% or more while reducing shrinkage and porosity.
- Silicon Carbide Fiber Single-Stage Pyrolysis Process
Single-stage pyrolysis converts infusible polysilazane fibers into crystalline silicon carbide using a continuous heating process.
- SiC Fluidized Bed Reactor Prevents Wear During Granule Growth
A CVD SiC fluidized bed reactor grows granules directly from seed particles using chemical vapor deposition.
- Silicon Carbide Filler Elastomer for Plasma Stability
Low bulk density silicon carbide filler in fluorine elastomer prevents weight loss and particle generation during plasma treatment.
- Silica Carbon Particles for High-Purity Silicon Carbide
Precipitated silica and carbon particles resolve impurity contamination from grinding, enabling high-purity silicon carbide production.
- Polydisilazane Resin Crosslinking via Alkylboranes
Alkylboranes trigger polydisilazane resin crosslinking upon oxygen exposure, eliminating expensive e-beam radiation and toxic gas requirements.
- Silicon Carbide Purification via Thermal Phase Transition
Thermal treatment of silicon carbide at over 1700°C induces phase transitions that purify the material, eliminating complex fractionation steps.
- CVI Ceramic Matrix Composite Structures with Graded Preform Pore Sizes
Graded preform plies with varying pore sizes facilitate uniform densification during chemical vapor infiltration processing.
- Silicon Carbide Powder Production via Silicon Vapor and Graphite
Vacuum enclosure reactions between silicon vapor and graphite powder reduce energy consumption while controlling particle size.
- Nitrogen Boron Doped SiC Body Resistivity Control
A CVD-SiC body doped with nitrogen and boron achieves high resistivity for semiconductor etcher components.
- High-Purity Silicon Carbide Powder Production via Starch Graphitization
Graphitized starch reacts with SiO to produce high-purity silicon carbide powder, avoiding complex supplementary cleaning steps.