2D Semiconductor U-Shaped Complementary Channels With a Common Gate
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Solution Overview
Problem
As semiconductor devices continue to miniaturize, there is a need for materials that can maintain performance without degrading, and two-dimensional semiconductor materials are being researched as potential substitutes for silicon.
Innovation Solution
The semiconductor device incorporates a configuration with a first and second channel, each comprising a two-dimensional material layer, a common gate electrode, and source and drain electrodes. The channels are designed to be N-type and P-type, respectively, and U-shaped, allowing for selective switching between on and off states based on the applied gate voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are miniaturized to improve integration degree, then integration degree is improved, but performance degradation occurs
Solution Approach 1:
The patent changes the material parameter from conventional silicon-based semiconductors to two-dimensional semiconductor materials (such as MoS2, WS2, MoSe2, WSe2). This material parameter change enables the channels to maintain excellent electrical characteristics and stability even at nano-scale thicknesses, thereby resolving the performance degradation issue while achieving device miniaturization and improved integration degree
Solution Approach 2:
The patent employs composite material structures by combining two-dimensional semiconductor material layers with carrier providing layers (doped semiconductor layers). The two-dimensional material layer provides stable electrical characteristics and nano-scale stability, while the carrier providing layer supplies carriers to enhance conductivity. This composite structure maintains performance in miniaturized devices while enabling high integration degree
2Reliability
If two-dimensional material layers are used to maintain performance in miniaturized devices, then performance is maintained, but manufacturing complexity increases
Solution Approach 1:
The patent segments the channel structure into distinct two-dimensional material layers and carrier providing layers. This segmentation allows each layer to be optimized independently - the two-dimensional material layer for stability and electrical characteristics, and the carrier providing layer for conductivity - while simplifying the overall manufacturing process through modular layer-by-layer fabrication
3Ease of manufacture
If conventional silicon materials are used, then manufacturing is easier, but performance degrades in nano-scale thickness
Solution Approach 1:
The patent changes the material parameter from bulk silicon to two-dimensional semiconductor materials with atomic-layer thickness. These materials inherently maintain excellent electrical characteristics and structural stability at nano-scale dimensions where conventional silicon degrades, while their thin-film nature actually simplifies integration into modern semiconductor manufacturing processes
Data Source
AI summary
Provided is a semiconductor device including a two-dimensional semiconductor material. The semiconductor device includes a first channel including a first two-dimensional material layer, a second channel being apart from the first channel and including a second two-dimensional material layer, a common gate electrode between the first channel and the second channel, a first source electrode and a first drain electrode in contact with the first channel, and a second source electrode and a second drain electrode in contact with the second channel, wherein one of the first channel and the second channel is an N-type channel, and the other is a P-type channel, and the first channel and the second channel are U-shaped.