2D Material Transistors with Dual Composition for Scaling
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Solution Overview
Problem
Conventional 2DM transistors face challenges such as high contact resistance and limitations in existing reactors and integration flows, which hinder their adoption in high-performance, high-volume computing.
Innovation Solution
The development of 2DM transistors with a first 2D channel material and a second 2D source/drain material of different compositions or thicknesses, allowing for gate length scaling below 10 nanometers without significant short-channel effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional 2DM transistors are fabricated using existing reactors and integration flows, then manufacturing process compatibility is maintained, but contact resistance remains high and performance is limited
Solution Approach 1:
The patent changes material parameters by introducing specific 2D materials (transition metal dichalcogenides, black phosphorus, graphane) with controlled thicknesses and compositions. This allows achieving low contact resistance while maintaining compatibility with existing manufacturing processes through parameter optimization rather than process redesign.
Solution Approach 2:
The patent employs composite material structures combining 2D channel materials with 2D source/drain materials. This composite approach enables simultaneous achievement of low contact resistance and manufacturing compatibility by selecting materials that can be integrated using conventional semiconductor fabrication techniques.
2Speed
If transistor gate length is scaled down to improve computing performance, then processing speed increases, but short-channel effects become significant below 10 nanometers
Solution Approach 1:
The patent changes the physical parameters of the channel material by using 2D materials with atomic-layer thickness. This extreme thinness provides superior gate control over the channel, suppressing short-channel effects even at sub-10nm gate lengths while maintaining high processing speed through the inherent mobility properties of 2D materials.
Solution Approach 2:
The patent transitions from conventional 3D bulk materials to 2D atomic-layer materials, effectively adding dimensional control to the transistor structure. This dimensional change enables precise control of current flow and electric field distribution, allowing aggressive gate length scaling without suffering from short-channel effects.
3Productivity
If conventional silicon transistors are used to achieve high-volume production, then manufacturing scalability is maintained, but performance limits are reached
Solution Approach 1:
The patent changes the material composition parameter from conventional silicon to 2D materials with superior electrical properties. This parameter change enables achieving high-performance characteristics compatible with high-performance computing while maintaining manufacturing scalability through integration with existing semiconductor fabrication infrastructure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These 2DM transistors achieve performance characteristics compatible with high-performance computing, enabling transistor scaling beyond conventional silicon limits while reducing contact resistance to acceptable levels.
Implementation Method 1
utilizing single-crystal materials and techniques like seed-based growth or metal organic chemical vapor deposition
Implementation Method 2
utilizing single-crystal materials and techniques like seed-based growth or metal organic chemical vapor deposition
Data Source
AI summary
Disclosed herein are transistors including two-dimensional materials, as well as related methods and devices. In some embodiments, a transistor may include a first two-dimensional channel material and a second two-dimensional source/drain (S/D) material in a source/drain (S/D), and the first two-dimensional material and the second two-dimensional material may have different compositions or thicknesses. In some embodiments, a transistor may include a first two-dimensional material in a channel and a second two-dimensional material in a source/drain (S/D), wherein the first two-dimensional material is a single-crystal material, and the second two-dimensional material is a single-crystal material.