3D Capacitor-Over-Transistor Layout for Reliable Semiconductor Integration
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Solution Overview
Problem
Highly integrated semiconductor devices face challenges in maintaining reliability and electrical characteristics due to increased complexity, which affects their performance in meeting requirements for fast operating speeds and low power consumption.
Innovation Solution
A semiconductor device design featuring a semiconductor substrate with distinct cell and peripheral areas, including transistors, capacitors, and wiring layers, where capacitors are vertically overlapping transistors and pads, and contact plugs connect these components to enhance electrical connectivity and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If highly integrated semiconductor devices are used to meet fast operating speeds and low power consumption requirements, then operating speed and power consumption improve, but reliability and electrical characteristics deteriorate
Solution Approach 1:
The patent transitions from planar capacitor布局 to vertically stacked capacitor structure, where capacitors are positioned above transistors in the third direction (perpendicular to substrate). This three-dimensional arrangement improves space utilization and electrical characteristics while maintaining device reliability under high integration conditions.
Solution Approach 2:
The patent divides the semiconductor device into distinct cell area and peripheral area, with different functional regions. The peripheral area includes first and second areas with different transistor and pad configurations, allowing optimized design for each functional zone while maintaining overall reliability.
2Use of energy by moving object
If highly integrated semiconductor devices are used to meet fast operating speeds and low power consumption requirements, then operating speed and power consumption improve, but electrical characteristics deteriorate
Solution Approach 1:
The vertically stacked capacitor structure positioned above transistors reduces parasitic capacitance and improves electrical characteristics by separating signal paths in the vertical dimension. This three-dimensional layout enables better electrical performance while maintaining low power consumption in highly integrated devices.
Solution Approach 2:
The patent implements different configurations in different regions: first transistors and first capacitors in the first area, second transistors and second capacitors in the second area. This localized optimization allows each region to be tuned for specific electrical characteristics while maintaining overall device performance.
3Area of stationary object
If capacitors are vertically overlapping transistors to optimize space utilization, then device size is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent utilizes the vertical dimension (third direction) to position capacitors above transistors, transforming a two-dimensional layout problem into a three-dimensional structure. This approach reduces the planar footprint while the systematic arrangement of stacked components keeps manufacturing processes manageable through established vertical deposition and etching techniques.
Data Source
AI summary
A semiconductor device which includes a semiconductor substrate having a cell area and a peripheral area, the peripheral area including a first area and a second area adjacent to each other, first transistors on the first area, a first wiring layer on the first transistors, a first pad on the second area and a portion of the first area, a first contact plug between the first wiring layer and the first area, a second contact plug between the first pad and the first area, a second pad on the first wiring layer, a third contact plug between the second pad and the first wiring layer, and a plurality of first capacitors on the second pad and that vertically overlap the first transistors, thus reliability and electrical characteristics of the semiconductor device may be increased.