3D Semiconductor Contact Structure for Higher Integration Density
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Solution Overview
Problem
As semiconductor devices shrink in size, their operating characteristics deteriorate, necessitating improved integration and electrical performance in three dimensional semiconductor devices.
Innovation Solution
A three dimensional semiconductor device design featuring sequentially stacked source/drain patterns with contact structures and contact lines, including active contacts with horizontal and vertical extensions, allowing for vertical stacking of transistors and reduced cell height.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the size of MOS field effect transistors is reduced to achieve higher integration, then device density increases, but operating characteristics deteriorate
Solution Approach 1:
The patent transitions from planar two-dimensional transistor layout to three-dimensional vertically stacked transistor architecture. Multiple transistor channels are stacked vertically to increase integration density while maintaining adequate horizontal spacing between devices, thereby preserving operating characteristics despite higher integration levels.
Solution Approach 2:
The transistor structure is segmented into multiple discrete channels stacked vertically, with each channel having its own source/drain regions and gate structure. This segmentation allows independent optimization of each channel's dimensions and spacing, enabling high integration while maintaining individual channel performance characteristics.
2Reliability
If vertical extension parts are added to active contacts to improve electrical connection, then contact reliability improves, but contact structure complexity increases
Solution Approach 1:
The contact structure extends from two-dimensional planar contacts into the vertical dimension, creating L-shaped or T-shaped contacts with both horizontal and vertical extension parts. The vertical extension parts penetrate through insulating layers to establish electrical connections with underlying transistor channels, improving contact reliability through enhanced mechanical and electrical coupling.
Solution Approach 2:
The contact structure is nested with multiple functional components: horizontal extension parts for lateral connectivity, vertical extension parts for depth penetration, and active contact regions for electrical connection. These components are integrated into a unified contact structure that performs multiple functions simultaneously.
Data Source
AI summary
A three dimensional semiconductor device includes first, second, third and fourth source/drain patterns sequentially stacked on a substrate, a contact structure on the first to fourth source/drain patterns and a contact line on the contact structure. The contact structure includes a first active contact on the first source/drain pattern, a second active contact on the second source/drain pattern, a third active contact on the third source/drain pattern, and a fourth active contact on the fourth source/drain pattern. A first vertical extension part of the first active contact is adjacent to one side of the contact structure, and a second vertical extension part of the second active contact is adjacent to the other side of the contact structure. A third vertical extension part of the third active contact is disposed between the first and second vertical extension parts and is closer to the first vertical extension part.