Nanoinformatics TRIZ Cases

A continuous sidewall contact via equalizes nanosheet access resistance and helps preserve source/drain strain in stacked FETs.

Selective etching and asymmetric source/drain epitaxy curb short-channel effects and tunneling while enlarging metal landing area.

Stacked 2D channel layers improve mobility while a bonded gate-insulator interface boosts adhesion and reduces charge trapping.

A fluorine-containing layer and anneal step enable region-specific gate dielectric doping for precise threshold voltage tuning in GAA transistors.

A multilayer inner spacer with annealed dielectric fill cuts parasitic capacitance and helps prevent source/drain-to-gate shorts in NSFETs.

A bottom dielectric isolation region replaces punch-through doping to cut leakage and capacitance in scaled nanosheet transistors.

Multilayer masking layers improve SiGe and Si etch selectivity for precise nano-FET patterning while remaining easier to remove.

Selective backside gate cutting removes gate cap metal between adjacent nanotransistor gates to cut parasitic capacitance, power use, and delay.

Vertical SiGe channel layers and SOI source/drain isolation improve FinFET scaling, preserving electrical performance at higher integration density.

Dielectric wafer bonding stacks SOI transistor layers into 3D nanosheets, raising density beyond 2D scaling without complex epitaxial growth.

Selective high-k deposition on the channel interfacial layer avoids low-κ spacers, cutting parasitic capacitance and preserving effective gate length.

Separate heating of etch by-products improves CFET trench recess precision, reducing nanostructure variation and by-product interference.

Low-K dielectric layers on inner spacers cut gate-to-source/drain parasitic capacitance in stacked nanosheet transistors, lowering power use.

A bottom dielectric feature isolates lower epitaxial regions to cut gate-drain capacitance and leakage in multi-gate transistors.

A wedge-shaped inner spacer uses a self-limited (111) facet etch stop to improve GAA FET gate control and lower channel resistance.

Dummy oxide interposers add bottom source/drain insulation in multigate transistors to cut leakage, limit parasitic capacitance, and retain stress.

A composite interfacial layer and metal silicate process cuts equivalent thickness in GAA FETs while limiting current leakage.

Using H2-assisted multi-step etching, this case forms an hourglass via on FinFET source/drain contacts to lower resistance while preserving etch precision.

Varying gate width above and below the fin extends source-drain spacing, cutting leakage, DIBL, and parasitic capacitance.

A 3D FinFET channel with partially surrounding gates and sidewall spacers helps prevent shorts as device widths and spacing shrink.

Source/drain spacer structures confine lateral growth and enable self-aligned gate cuts, improving gate control, yield, and short-channel behavior.

Power lines placed between vertically stacked FET levels cut cell height and layout area while improving signal routing density.

Opposite-work-function gate regions over active and isolation corners suppress the double hump effect and improve transistor drain current behavior.

Vertically extended active contacts in stacked source/drain layers raise 3D semiconductor integration while preserving operating characteristics.

A dielectric mold shields adjacent semiconductor fins during fin cutting, widening the etch window and improving isolation accuracy.

Sequential ion implantations at different energies shape semiconductor wells to limit lateral dopant diffusion, reducing sub-fin leakage and resistance.

A low-k dielectric barrier laterally isolates adjacent epitaxial source-drain regions, preventing shorts while enabling tighter GAA transistor layouts.

Selective recess etching and dielectric fill enable backside S/D contacts while protecting source/drain corners without inner spacers.

Controlled dislocations formed by PAI, tensile stress, and annealing raise carrier mobility in scaled MBC transistors for faster switching.

A low-oxygen semiclathrate etchant boosts silicon-over-silicon-germanium selectivity and surface smoothness in narrow-gap GAA transistor etching.

Inclined gate lines near a fin isolation region preserve wiring-to-contact spacing and cut parasitic capacitance in scaled IC layouts.

An air-gap CPODE isolation structure uses a low-k filler and hybrid dielectric trench to cut parasitic capacitance and RC delay in scaled ICs.

Ion implantation creates an etch stop layer that controls trench depth and alignment in backside contact formation, improving process consistency.

Ion implantation and annealing neutralize gate spacer dangling bonds, limiting interfacial layer growth and boosting GAA transistor current.

Selective dielectric liner patterning forms dielectric walls in narrow GAA fin trenches, improving yield, gate control, and threshold uniformity.

Selective anti-reaction layer removal enables a continuous metal cap on multi-gate transistors, lowering gate resistance and easing via connection.

Backside gate cut formation uses a sacrificial fill and replacement metal to isolate adjacent gates while limiting etch damage and short-channel effects.

Isolation segments with varied widths break gate continuity to curb leakage and photoresist defects as semiconductor gate pitch shrinks.

A constant current formation layer enables ternary inverter operation with current independent of gate voltage, reducing leakage and circuit complexity.

An oxygen-based recess treatment forms a CESL barrier layer that suppresses leakage currents between closely spaced semiconductor contacts.

A trench contact link reconnects gate-cut trench contacts in stacked nanowire ICs, reducing lithography burden while maintaining continuity.

Selective oxide etch and nitride deposition form PFET hardmask and NFET bottom isolation together, cutting hardmask rework in GAA CMOS.

Sequential dielectric and work-function layers wrap stacked channels to tune threshold voltage while improving gate-all-around transistor reliability.

A functional gate-containing liner replaces sacrificial liners in stacked nanosheet CFETs to enable independent gates and lower parasitic capacitance.

Self-aligned gate isolation uses dummy conductive layers to keep gate structures uniform across varying active-region spacing and improve IC stability.

A wedge-shaped local buffer and thinned edge buffer stabilize nanosheet FET source/drain regions and help prevent shorts during scaling.

Self-aligned fin cuts place isolation on-pitch with gate electrodes, reducing dummy gates while preserving strain and transistor density.

Surrounding-gate IGZO TFT selectors replace CMOS size-limited transistors, enabling low-temperature BEOL integration and denser memory cells.

Mask-defined epitaxial growth independently tunes NMOS and PMOS source/drain regions in NSFETs and FinFETs to improve flexibility and reduce defects.

Nickel-alloy contacts and treated 4H-SiC nanowires enable linear ohmic conduction and high conductivity at room temperature.

A lifted sacrificial gate spacer creates an air gap above the epitaxial source/drain, cutting parasitic capacitance while avoiding etchant damage.

Selective p- and n-dipole mixing in the interfacial and high-k gate stack lets stacked CFET nanosheet FETs use different threshold voltages.

Residual-stress control in glue layers reduces gate warpage, voids, and seams, helping FinFETs maintain uniform dimensions and reliability.

Protective inner spacers shield nanosheet source/drain features during channel release, preserving isolation and transistor reliability.

Dipole-doped high-k gate dielectric layers use depth and concentration control to tune threshold voltage without sacrificing semiconductor integration density.

Dielectric walls isolate adjacent nanosheet channels so x-shaped gate structures can share contacts, boosting CMOS density with less shorting risk.

Co-deposited titanium and silicon forms a stable SiGe contact interface that cuts resistance and prevents voids during high-temperature processing.

Controlled STI topography uses dopant diffusion and etch-rate differences to tune n/p channel height, boosting drive current and cutting leakage.

Different N and P dipole dose combinations let stacked ribbon CFETs integrate multiple threshold voltages to balance speed and power.

Buried lines and through vias route power with lower resistance while sharing ESD protection functions to shrink IC footprint and stabilize supply potential.

A wrapped gate dielectric and metal gate stack surrounds stacked nanostructures to improve channel depletion and suppress short-channel effects.

Atomic concentration control in sacrificial layers shapes replacement gates and inner spacers to improve nanostructure uniformity and reduce capacitance.

Separating GAA logic from stacked FinFET I/O enables thicker gate dielectric where needed without sacrificing gate control or process simplicity.

Multi-patterned GAA transistor fabrication uses sacrificial and capping layers to isolate gates, improve gate control, and cut cell height.

Low-k inner spacers and passivation layers cut gate-to-source/drain parasitic capacitance in GAA transistors while improving drive current.

A 28Si-enriched upper source/drain helps scaled FinFETs maintain speed, accuracy, and reliability at higher integration density.

Wet and dry annealing of an ALD dielectric layer lowers k value while preserving etch resistance for GAA inner spacer formation.

Porous silicon nitride inner spacers widen the GAA process window, cut parasitic capacitance, and protect the epitaxial stack from oxidation.

Quadrilateral epitaxial layers on GAA transistor nanostructure sidewalls improve thickness uniformity to reduce junction leakage and DIBL.

A protection layer and oxygen etch form a dielectric barrier that preserves gate dielectric integrity during p-FET work-function annealing.

A corner protection capping layer thickens nanosheet gate isolation, cuts parasitic capacitance, and improves inner spacer uniformity.

Different dopants in the substrate and source/drain protection structure improve conductivity paths and reliability as MOSFETs shrink.

Tapered trench bottom-up epitaxy forms void-free source/drain regions, preserves gate formation margin, and lowers capacitance in scaled GAA transistors.

A tapered source/drain contact with larger spacer and silicide regions cuts parasitic RC delay and improves transistor speed in scaled ICs.

Metallic TMD electrodes form ohmic semiconductor contacts that suppress Fermi level pinning, cut contact resistance, and support thinner devices.

A backside via between adjacent nanosheet devices connects source/drain contacts to backside power rails while reducing shorts and patterning complexity.

Stacked channels and spacer barriers interrupt leakage paths between adjacent source/drain regions without added dielectric isolation.

A T-shaped inner spacer and dual work function gate layout cut parasitic capacitance and GIDL in nanosheet transistors.

Different crystal lattice directions for fin-based programming and nanosheet reading transistors extend read breakdown time while preserving programming.

Embedded epitaxial regions beside a protruding fin improve nanosheet channel stress control, boost current flow, and reduce leakage risk.

Inactive edge fins are converted to dielectric structures after dummy gate definition to reduce iso-dense loading and stabilize metal gate profiles.

Varying nanosheet channel thickness by layer position helps GAA transistors raise drive current while enabling tighter pitch through multi-patterning.

Replacing SiGe sacrificial layers with BN, SiN, or SiCO enables even recessing and blocks etch pathways that can damage source/drain epi.

Cyclic etching, passivation, and pump-out steps prevent over-etching near high-k features while preserving gate fill windows and source/drain volume.

Dielectric source/drain spacers confine lateral growth in dense fin active regions, reducing shorting and parasitic capacitance.

Ion implantation modifies the insulating layer etch resistance to reduce STI dishing and protect GAA transistor channel regions.

Layered trench dielectrics and a stacked work function structure cut VGAA transistor leakage current without increasing resistance.

Stacked mask and liner layers guide etching to prevent mask defects and form precise active patterns for multi-gate transistors.

Quadrilateral epitaxial source/drain layers on GAA nanostructures cut junction leakage and DIBL through controlled thickness and doping.

Air-gap inner spacers combine etch-resistant dielectric layers with low-k isolation to cut parasitic capacitance in multi-gate transistors.

Graded germanium SiGe/Si superlattices improve hole mobility and limit dislocations, helping GAA transistors control short channel effects.

Plasma oxidation of a sacrificial epitaxial layer forms dense hGAA oxide without consuming nanosheet channels, improving electrostatic control.

A bypass tap structure links buried power rails to upper CFET source/drain regions, removing dedicated tap cells and preserving logic density.

Extending semiconductor structures across isolation-region gates avoids semiconductor cuts, reducing within-die variation and gate etch-out risk.

Porous silicon nitride inner spacers cut parasitic capacitance in GAA devices while preserving etch selectivity and gate spacer integrity.

Oxygen- and fluorine-resistant gate capping layers help tune threshold voltage and improve multi-gate reliability as IC scaling increases.

Protruding gate and active-contact structures improve lower-line connection reliability in scaled MOSFETs while reducing shorts and misalignment.

A wall fin with sacrificial cladding and multi-dielectric layers improves bottom-channel gate control and suppresses short-channel effects.

A graphene transistor design uses an insulating cap and separated drain contact to modulate current flow via a tunnel junction.