Self-Aligned Gate Isolation for Uniform Semiconductor Gates
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Solution Overview
Problem
The challenge of achieving improved operational performance and reliability in semiconductor devices with high integration is exacerbated by the reduction in gate and channel lengths, necessitating advancements in manufacturing processes and structures to stabilize integrated circuits.
Innovation Solution
A method of manufacturing semiconductor devices involves forming gate isolation structures in a self-aligned manner, using a dummy conductive material layer and mask patterns to create uniform gate structures across active regions with varying intervals, and forming gate electrodes separated by these isolation structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If gate and channel lengths are reduced to achieve high integration, then device density increases, but operational stability and reliability deteriorate
Solution Approach 1:
The gate isolation structure is divided into multiple segments including a lower structure (dam structure) and an upper structure, with each serving specific functions. The lower structure provides self-aligned formation for uniformity, while the upper structure provides electrical isolation, collectively resolving the reliability issue at scaled dimensions
Solution Approach 2:
The lower structure of the gate isolation structure is formed in advance before the gate electrode formation. This preliminary self-aligned structure ensures uniform gate structures are achieved even when active region intervals vary, thereby improving operational stability at reduced dimensions
2Adaptability or versatility
If active regions with various intervals are present, then design flexibility increases, but gate structure uniformity deteriorates
Solution Approach 1:
The lower structure of the gate isolation structure serves as a self-aligned reference that automatically adapts to different active region intervals. This self-service mechanism ensures that uniform gate structures are formed regardless of the spacing between active regions, resolving the uniformity issue while maintaining design flexibility
Solution Approach 2:
The lower structure performs multiple functions: it serves as an etch stop layer, a self-aligned reference for gate formation, and an electrical isolation barrier. This multi-functionality allows the same structure to maintain gate uniformity across various active region intervals, achieving both design flexibility and manufacturing precision
Data Source
AI summary
A method of manufacturing a semiconductor device includes: forming first to third preliminary active patterns on a substrate to have different intervals therebetween, forming first and second field insulating layers between the first and second preliminary active patterns and between the second and third preliminary active patterns, respectively, and forming first to third gate electrodes respectively on first to third active patterns formed based on the first to third preliminary active patterns, separated by first and second gate isolation structures.