Semiconductor Protection Structure for Scaled MOSFET Reliability
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Solution Overview
Problem
The reduction in size of MOSFETs in semiconductor devices leads to deterioration in operational properties, necessitating improvements in electrical and reliability characteristics.
Innovation Solution
A semiconductor device design incorporating specific doping patterns, source/drain patterns with different dopants, and protection structures connected to metal layers, along with a channel pattern and gate electrode configuration that enhances electrical connectivity and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the size of MOSFETs is reduced to meet increasing demand for small pattern size and reduced design rule, then the device size is reduced, but the operational properties of the semiconductor device deteriorate
Solution Approach 1:
The patent applies local quality by introducing a protection structure with specific doping patterns (first and second doping patterns with different conductivity types) in localized regions adjacent to the MOSFET channel. This creates non-uniform doping distribution where the protection structure has tailored electrical properties different from the bulk substrate, thereby improving reliability without requiring overall device size reduction
Solution Approach 2:
The protection structure is formed in advance during the fabrication process, with doping patterns created before final device operation. The first doping pattern (n-type or p-type) and second doping pattern (opposite conductivity type) are preliminarily established to prevent operational deterioration before the MOSFET is put into service, rather than attempting to fix issues after scaling
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design improves electrical performance and reliability of semiconductor devices by optimizing conductivity and reducing operational issues associated with reduced MOSFET sizes.
Implementation Method 1
The protection structure may include a doping pattern in the substrate, and a first source/drain pattern that is on the substrate and is electrically connected to an upper portion of the doping pattern. The doping pattern and the first source/drain pattern may include different dopants from each other.
Implementation Method 2
a first source/drain pattern that is on the substrate and is electrically connected to an upper portion of the doping pattern
Data Source
AI summary
A semiconductor device may include a substrate, a lower power line in a lower portion of the substrate, metal layers on the substrate, and a protection structure that is electrically connected to the lower power line and the metal layers. The protection structure may include a doping pattern in the substrate, and a first source/drain pattern that is on the substrate and is electrically connected to an upper portion of the doping pattern. The doping pattern and the first source/drain pattern may include different dopants from each other.