FinFET Gate Line Inclination for Stable Isolation Spacing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in integrated circuit devices is to maintain a high operating speed and accuracy while ensuring a stable insulation distance between wirings and contacts within a reduced area, and improving the reliability of these devices as they scale down.
Innovation Solution
The integrated circuit device incorporates a fin-type active region structure with inclined gate lines and a fin isolation region, featuring a fin isolation insulation structure that extends perpendicular to the gate lines, ensuring a stable insulation distance and reducing unwanted parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the area of the integrated circuit device is reduced through down-scaling, then the device density and integration level are improved, but the insulation distance between wirings and contacts becomes unstable and reliability deteriorates
Solution Approach 1:
The gate line is designed with an asymmetric inclined shape rather than a straight horizontal configuration. The gate line slopes downward from the first end toward the second end, creating an asymmetric structure that optimizes the insulation distance distribution in the scaled-down device layout
Solution Approach 2:
The gate line is configured with a three-dimensional inclined structure instead of a two-dimensional horizontal line. By introducing a vertical dimension through the inclination, the gate line achieves better spatial separation and insulation distance stability within the reduced planar area
2Area of moving object
If the area of the integrated circuit device is reduced through down-scaling, then the device density is improved, but the insulation distance between wirings and contacts decreases
Solution Approach 1:
The gate line employs an asymmetric inclined configuration that strategically distributes the insulation distance along its length, maintaining adequate separation between wirings and contacts despite the overall device area reduction
Solution Approach 2:
By configuring the gate line with an inclination in the vertical dimension, the design effectively increases the three-dimensional insulation distance while maintaining a compact two-dimensional footprint, thus preserving wiring-to-contact separation in scaled-down devices
3Area of moving object
If the area of the integrated circuit device is reduced through down-scaling, then the integration level is improved, but parasitic capacitance increases
Solution Approach 1:
The asymmetric inclined gate line configuration reduces the overlapping area between adjacent conductive elements compared to a horizontal configuration, thereby minimizing parasitic capacitance generation in the high-density scaled-down layout
Solution Approach 2:
The three-dimensional inclined structure of the gate line reduces planar overlap with surrounding conductors by utilizing vertical spacing, effectively lowering parasitic capacitance while maintaining the compact device footprint required for high integration
Data Source
AI summary
An integrated circuit device includes: a first fin-type active region and a second fin-type active region that extend on a substrate in a straight line in a first horizontal direction and are adjacent to each other in the first horizontal direction; a fin isolation region arranged between the first fin-type active region and the second fin-type active region on the substrate and including a fin isolation insulation structure extending in a second horizontal direction perpendicular to the first horizontal direction; and a plurality of gate lines extending on the first fin-type active region in the second horizontal direction, wherein a first gate line that is closest to the fin isolation region from among the plurality of gate lines is inclined to be closer to a center of the fin isolation region in the first horizontal direction from a lowermost surface to an uppermost surface of the first gate line.