3D Multichannel Gate Layout for Source/Drain Leakage Isolation
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Solution Overview
Problem
Current leakage through channels between adjacent source/drain regions in semiconductor integrated circuits occurs due to the miniaturization and multifunctionalization of electronic devices, necessitating a solution to minimize current leakage without using insulating dielectric materials.
Innovation Solution
A semiconductor integrated circuit device design featuring a channel structure with multiple channels and spacers that include epitaxial regions and grooves between gate lines, along with specific spacer configurations to minimize current leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the line width and pitch of multilayer wiring structure are decreased to enable device miniaturization, then device functionality and integration are improved, but current leakage through channels between adjacent source/drain regions increases
Solution Approach 1:
The channel active region is divided into multiple segmented channels (first channel, second channel, third channel) arranged in a three-dimensional configuration. This segmentation allows each channel to be independently controlled and spaced, preventing direct current leakage paths between adjacent source/drain regions while maintaining high device integration.
Solution Approach 2:
The patent transitions from a planar two-dimensional channel arrangement to a three-dimensional configuration where channels are stacked vertically and spaced apart. The second channel is positioned at a different height level between the first and third channels, creating vertical separation that blocks current leakage while enabling higher device density.
2Object-generated harmful factors
If insulating dielectric material is formed between source/drain region and substrate to space them apart, then current leakage is reduced, but device complexity and manufacturing complexity increase
Solution Approach 1:
The patent removes the need for separate insulating dielectric materials by directly utilizing the substrate itself as the spacing medium. The channel active region extends into the substrate, and the segmented channel configuration inherently provides electrical isolation, eliminating the requirement for additional insulating layers and reducing structural complexity.
Solution Approach 2:
The substrate serves as an intermediary element that provides both mechanical support and electrical isolation. By extending the channel active region into the substrate and utilizing the substrate's inherent properties, the patent achieves current leakage prevention without requiring separate insulating dielectric materials.
3Object-generated harmful factors
If insulating dielectric material is formed between source/drain region and substrate, then current leakage is reduced, but manufacturing process complexity increases
Solution Approach 1:
The patent eliminates the manufacturing step of forming separate insulating dielectric materials by directly using the substrate as the isolation medium. The segmented channel structure is formed through conventional semiconductor processing techniques that extend channels into the substrate, simplifying the manufacturing process while achieving current leakage reduction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design effectively reduces current leakage between adjacent source/drain regions, enhancing the performance and reliability of semiconductor integrated circuits.
Implementation Method 1
a first spacer of the plurality of first spacers is between the first epitaxial region and the second epitaxial region of the first source/drain region, and overlaps a respective one of the plurality of gate lines in the first direction
Data Source
AI summary
A semiconductor integrated circuit device including a substrate with a first element region of a P type and a second element region of an N type, a channel active region that extends in the first element region or the second element region, the channel active region including a plurality of channels, a plurality of gate lines that extend in a second direction intersecting and include a gate metal layer, and a gate insulating film in contact with the gate metal layer, a plurality of first spacers on opposite side portions of respective ones of the gate lines, and a plurality of source/drain regions that are between ones of the plurality of gate lines. The channel active region includes a first channel directly on the substrate, and a second channel spaced apart from the first channel and extends into the gate metal layer.