Gate-All-Around Semiconductor Structure With Self-Aligned Gate Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in semiconductor manufacturing lies in achieving low-cost, high-performance, and low-power integrated circuits with complex functions while managing the complexity introduced by miniaturization, particularly in gate control and short-channel effects in multi-gate devices like gate-all-around transistors.
Innovation Solution
The formation of semiconductor structures with source/drain spacer structures that confine lateral growth and allow for enhanced performance by enlarging the gap-fill window for metal gate electrodes, along with self-aligned gate-cut openings to relax photolithography process limits and improve manufacturing yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If miniaturization is used to improve production efficiency and lower costs, then productivity increases, but device complexity increases
Solution Approach 1:
The patent segments the gate structure into multiple components including gate electrodes, gate dielectric layers, and source/drain spacer structures. This segmentation allows for independent optimization of each component during fabrication, simplifying the overall manufacturing process despite device miniaturization
Solution Approach 2:
The patent employs preliminary actions by forming source/drain spacer structures before completing the gate electrode formation. This preliminary structuring establishes alignment references that simplify subsequent photolithography steps and reduce overlay complexity in miniaturized devices
2Reliability
If gate structure is extended around channel region to improve gate control, then gate-channel coupling increases, but manufacturing precision requirements increase
Solution Approach 1:
The source/drain spacer structures serve as self-aligned references that automatically define the gate electrode positioning. This self-service mechanism eliminates the need for separate alignment steps, achieving precise gate-channel coupling without increasing manufacturing precision requirements
Solution Approach 2:
The patent transitions from planar gate structures to three-dimensional gate-all-around configurations. By extending the gate structure around the channel region in multiple dimensions, superior gate control is achieved while the vertical stacking approach maintains compatibility with conventional manufacturing precision capabilities
3Manufacturing precision
If source/drain spacer structures are formed to confine lateral growth, then manufacturing precision improves, but device complexity increases
Solution Approach 1:
The source/drain spacer structures act as intermediary elements between the channel region and the gate electrodes. These spacers mediate the lateral growth confinement while providing structural support and electrical isolation, achieving precision control without excessive complexity increase
Solution Approach 2:
The source/drain spacer structures perform multiple functions simultaneously: they confine lateral growth of source/drain regions, serve as alignment references for gate electrode formation, and provide electrical isolation. This multi-functionality reduces the need for separate structures, managing complexity while improving manufacturing precision
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure includes a first gate stack wrapping around first nanostructures, a second gate stack wrapping around second nanostructures, a gate isolation structure interposing between the first gate stack and the second gate stack, a first source/drain feature adjoining the first nanostructures, a second source/drain feature adjoining the second nanostructures, and a source/drain spacer structure interposing between the first source/drain feature and the second source/drain feature. The gate isolation structure covers a sidewall of the source/drain spacer structure.