MOSFET Gate and Contact Protrusions for Short-Margin Scaling
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Solution Overview
Problem
The scaling down of metal-oxide-semiconductor field-effect transistors (MOSFETs) leads to operational property deterioration due to reduced short margin when conductive components are closely placed, necessitating improved semiconductor devices with enhanced electric characteristics and reduced process failures.
Innovation Solution
A semiconductor device design featuring a gate electrode with an electrode protruding portion and an active contact with a contact protruding portion, both connected to lower interconnection lines, and spacers with controlled top surface heights to prevent misalignment and process failures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If MOSFETs are scaled down to meet increasing demand for smaller pattern size and higher performance, then device density and integration capability are improved, but operational properties deteriorate due to reduced short margin when conductive components are closely placed
Solution Approach 1:
The patent introduces protruding portions that extend vertically from the gate electrode and active contact surfaces, utilizing the third dimension (height) to achieve electrical connection with lower interconnection lines. This dimensional transition allows conductive components to maintain adequate horizontal spacing while establishing reliable vertical connections, thereby resolving the contradiction between miniaturization and operational reliability.
Solution Approach 2:
The protruding portions act as intermediary structures between the gate electrode/active contact and the lower interconnection lines. These protrusions provide dedicated connection points that facilitate reliable electrical contact without requiring additional via holes or complex routing, thus improving operational properties while maintaining compact design.
2Reliability
If additional vias are used to connect gate electrode and active contact to lower interconnection lines, then connection reliability is improved, but device complexity and process steps increase
Solution Approach 1:
The patent merges the connection function into the existing gate electrode and active contact structures by forming protruding portions directly from these components. This integration eliminates the need for separate via structures and additional connection steps, thereby maintaining connection reliability while reducing device complexity and process overhead.
Solution Approach 2:
The gate electrode and active contact structures serve dual purposes: their primary function as transistor control elements and their secondary function as connection points to lower interconnection lines through the protruding portions. This self-service approach eliminates the need for additional dedicated connection structures, simplifying the overall device architecture and fabrication process.
3Reliability
If spacers with controlled top surface heights are used, then misalignment and short issues are prevented, but manufacturing precision requirements increase
Solution Approach 1:
The spacers are formed with controlled top surface heights before the deposition of lower interconnection lines, establishing predetermined alignment references in advance. This preliminary action ensures that subsequent layers can be accurately positioned relative to the gate electrode and active contact protrusions, preventing misalignment and short circuit issues while managing manufacturing precision requirements through proactive structure preparation.
Data Source
AI summary
A semiconductor device includes an active pattern on a substrate, a source/drain pattern on the active pattern, a gate electrode on a channel pattern connected to the source/drain pattern, an active contact on the source/drain pattern, a first lower interconnection line on the active contact, a second lower interconnection line on the gate electrode, a first spacer between the gate electrode and the active contact, and a second spacer between the first spacer and the gate electrode or the active contact. The gate electrode includes an electrode body portion and an electrode protruding portion protruding from a top surface thereof and contacting the second lower interconnection line. The active contact includes a contact body portion and a contact protruding portion protruding from a top surface thereof and contacting the first lower interconnection line. A top surface of the first spacer is higher than a top surface of the second spacer.