3D Hall Element With Deep Trench Isolation For Cross-Interference Reduction
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Solution Overview
Problem
Existing 3D Hall effect sensors face challenges with cross-interference and complex assembly processes, leading to reduced accuracy and increased cost, particularly in sensing magnetic fields in multiple directions and requiring multiple contact points.
Innovation Solution
The development of a 3D Hall element with deep trench isolation (DTI) and shallow trench isolation (STI) regions, allowing for separate sensing of magnetic field components and individual optimization of planar and vertical Hall elements, reducing cross-interference and complexity, while being compatible with CMOS technology nodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If 3-Axis Hall sensors are assembled from six building blocks, then 3D magnetic field sensing capability is achieved, but the assembly process becomes too complicated and the sensor size increases undesirably
Solution Approach 1:
The patent combines multiple Hall sensing elements into a single integrated 3D Hall sensor structure rather than assembling six separate building blocks. This integration maintains the 3D magnetic field sensing capability while significantly simplifying the assembly process and reducing the overall sensor size.
Solution Approach 2:
The integrated 3D Hall sensor structure is designed to perform multiple sensing functions (sensing magnetic fields in three dimensions) within a single device, eliminating the need for multiple separate sensors and their associated assembly processes.
2Adaptability or versatility
If multiple contact terminals are used for Hall sensing, then magnetic field sensing in multiple directions is enabled, but cross-interference between sensing terminals increases
Solution Approach 1:
The patent segments the sensing function by providing separate sensing regions for different magnetic field components within the integrated structure. This segmentation allows each region to sense specific directional components independently, reducing cross-interference while maintaining multi-directional sensing capability.
3Device complexity
If one n-type element is used for 3D Hall sensing, then device simplicity is maintained, but design flexibility for optimizing planar and vertical Hall elements is reduced
Solution Approach 1:
The patent implements local quality by providing different doping configurations in different regions of the integrated structure. Specifically, first and second n-type doping regions with different doping concentrations are used to independently optimize planar and vertical Hall elements, allowing each region to be tailored for its specific sensing function while maintaining overall device integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves improved sensitivity and reduced cross-interference, enabling accurate magnetic field sensing in both perpendicular and in-plane directions without additional masks, optimizing planar and vertical Hall elements independently, and reducing the need for additional isolation layers.
Implementation Method 1
A Hall effect is the production of a voltage difference (the Hall voltage) across an electrical conductor, transverse to an electric current in the conductor, and a magnetic field perpendicular to the current. When a current-carrying semiconductor is kept in a magnetic field, the charge carriers of the semiconductor experience a force in a direction perpendicular to both the magnetic field and the current.
Data Source
AI summary
A method of forming a 3D Hall effect sensor and the resulting device are provided. Embodiments include forming a p-type well in a substrate; forming a first n-type well in a first region surrounded by the p-type well in top view; forming a second n-type well in a second region surrounding the p-type well; providing n-type dopant in the first and second n-type wells; and providing p-type dopant in the p-type well and the first n-type well.