3D IC Layer Transfer via Ion Implantation Cleave
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Solution Overview
Problem
Current methods for stacking and interconnecting three-dimensional integrated circuit devices using heterogeneous and non-uniform layers face challenges in achieving high inter-layer connection density and signal bandwidth, particularly with existing chip stacking methods relying on interposers and through-Silicon vias.
Innovation Solution
The method involves providing a substrate with dielectric and conductive structures, implanting ions to define a cleave plane, and cleaving the substrate to form a cleaved layer that is used to create a three-dimensional integrated circuit device with stacked layers, utilizing high-energy proton implants and hydrogen damage to facilitate precise bonding and interconnect formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If existing chip stacking methods using interposers and through-Silicon vias are employed, then device stacking is achieved, but inter-layer connection density and signal bandwidth are limited
Solution Approach 1:
The patent removes the interposer layer from the stacking structure, directly bonding IC layers to each other. This extraction of the intermediate layer simplifies the overall structure and enables higher connection density by eliminating the need for complex interposer routing and reducing the number of fabrication steps required
Solution Approach 2:
The patent transitions from two-dimensional planar interconnection through interposers to three-dimensional direct vertical bonding between IC layers. This dimensional change allows signals to travel shorter distances through direct vias between layers, increasing connection density and bandwidth while reducing structural complexity
2Manufacturing precision
If high-energy proton implants are used for layer transfer, then precise cleave plane definition is achieved, but damage effects in device structures occur
Solution Approach 1:
The patent applies a hydrogen pre-implantation step before the main proton implantation to create a hydrogen-rich region that serves as a predetermined cleavage plane. This preliminary action allows the subsequent high-energy protons to define the cleave plane with high precision while the pre-placed hydrogen mitigates damage effects by providing a controlled separation path
Solution Approach 2:
The patent uses a hydrogen-rich layer as an intermediary between the high-energy proton beam and the device structures. This hydrogen layer absorbs much of the implantation damage while still allowing the protons to define the cleave plane precisely, protecting the underlying device structures from excessive damage
3Reliability
If photoresist material is used to shield transistors, then protection from ultraviolet radiation is achieved, but implant depth control is affected
Solution Approach 1:
The patent applies photoresist material with specific thickness and material properties in different regions to achieve both protection and precise implant depth control. By locally adjusting the photoresist thickness and composition, the patent shields transistors from ultraviolet radiation while maintaining accurate control over where the proton implantation occurs and how deep it penetrates
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly increases inter-layer connection density and signal bandwidth, while also protecting sensitive device layers from ultraviolet radiation and enabling efficient heat removal through coolant channels, resulting in enhanced 3D device functionality and manufacturability.
Implementation Method 1
Ions are implanted into the first substrate, the ions traveling through the dielectric structures and the conductive structures to define a cleave plane in the first substrate
Implementation Method 2
subjects the unpatterned photoresist material to the implantation process to introduce a plurality of hydrogen particles through the unpatterned photoresist material to a selected depth to a cleave region underlying the surface region
Implementation Method 3
the unpatterned photoresist material is configured to shield one or more of the plurality of transistors from electromagnetic radiation in a wavelength range of below 400 nm
Data Source
AI summary
A method comprises providing a first substrate having dielectric structures and conductive structures. Ions are implanted into the first substrate, the ions traveling through the dielectric structures and the conductive structures to define a cleave plane in the first substrate. The first substrate is cleaved at the cleave plane to obtain a cleaved layer having the dielectric structure and the conductive structures. The cleaved layer is used to form a three-dimensional integrated circuit device having a plurality of stacked integrated circuit (IC) layers, the cleaved layer being one of the stacked IC layers.