Solid-State Devices TRIZ Cases

A sacrificial electrode protects pad parts on display substrates by redirecting oxidation reactions away from critical components.

Composite masks using sidewall spacers and sacrificial patterns enable fine double patterning while preventing pitting in semiconductor devices.

A buffer oxide layer in a resistive memory device structure limits electrical current flow through the variable resistive oxide.

A phase change memory via integrates a heater lance material to eliminate adhesion layers and additional electrodes.

Spin-orbit torque wiring generates torque to rotate ferromagnetic metal layer magnetization, reducing current density and heat generation.

A NAND memory cell uses a resistive switching component on the gate electrode to store multiple stable resistance states.

A semiconductor-on-insulator structure incorporates a polycrystalline silicon layer between the substrate and oxide to reduce electrical losses.

Information collection sub-pixels emit infrared light via conversion material to acquire depth data.

Angled active layer patterns increase transistor channel length within fixed pixel regions.

A reflective layer shares material with the first color filter in an OLED panel to enable simultaneous fabrication.

Segmenting memory cells by write characteristics improves yield and recording density while reducing write time.

Random protuberances on a scattering layer mitigate microcavity-induced color cast while maintaining luminance and light extraction efficiency.

Rhenium heptoxide doping creates a stable charge-transfer complex that prevents ITO electrode dissolution while improving device lifespan.

A tapered transfer gate widens near the photodiode to maintain electric potential uniformity and enhance light input.

Trench-based device isolation structures separate adjacent pixel regions in image sensors to prevent electrical interference between neighboring light detectors.

Carbon-doped semiconductor pillar prevents boron diffusion during heat treatment, ensuring reliable drain select transistor operation.

Tab portions on the gate compensate for photolithography edge loss, reducing leakage current and improving punch-through resistance.

Segmented first and second blocking dams prevent air permeation in flexible displays, maintaining reliability when the primary barrier sustains damage.

Top gate structures position gates above active layers, reducing masking steps and resolving current leakage trade-offs.

A microelectromechanical loudspeaker connecting element uses a base structure with a material recess to reduce moving mass.

Segmented insulating layers in organic EL devices reduce moisture permeability near sealing members, extending light emitting layer lifetime.

Ion implantation cleaves substrates for stacked 3D ICs, increasing inter-layer connection density while protecting device integrity.

A silicon hydronitride barrier prevents hydrogen diffusion to stabilize Si-H bonds and reduce leak current.

Molding resin housing isolates electrical connecting parts from heat conducting areas to simplify LED package assembly.

A multilayer flexible planar embedded laminated electrode structure integrates source, drain, and gate electrodes within a single plane.

Non-overlapping support pillars in a multi-tier memory stack prevent electrical leakage and collateral damage while maintaining structural integrity.

Isolation trench shrinking reduces lithographic gaps, resolving line-end shortening.

A transparent conductive and metal stack layer reduces impedance in thin-film transistor structures, decreasing signal delay in large-sized panels.

Three-dimensional trenches form vertical springs that isolate MEMS devices from package stress without damaging them during release etching.

A 3D NAND memory device uses link parts connecting semiconductor layers to underlying layers, simplifying the stacked electrode structure.

A variable resistance memory device uses a pillar-shaped gate electrode to control current flow through surrounding layers.

Repositioning the pad to the front-side face of the second substrate shortens electrical routes, reducing connection resistance and improving sensitivity.

Variable width stress distribution areas in bendable displays reduce damage from stress concentration at bent portions.

Sidewall spacer formation defines precise electrode geometry to minimize reset current and improve cell density.

Island semiconductor layers serve as source lines while bit lines align in columns to reduce resistance and enable efficient Fowler-Nordheim tunnel current injection.

Specific arylene ether polymer structures provide high relative permittivity to enable low-voltage operation while maintaining low leakage currents.

Single mask via opening reduces process time while a conductive layer prevents nonconducting complex formation during annealing.

A hydrogen collection layer traps gas from encapsulation to prevent transistor threshold voltage shifts and display smears.

Spatially separated organic photodiodes in well structures reduce crosstalk and improve mechanical stability.

Stacked device pairs enable simultaneous fingerprint sensing and brightness detection on OLED substrates.

An OLED device uses insulating bridges and conductors to connect isolated second electrode regions to contact pads.

A substrate light scattering layer redirects incident light via a concave-convex surface.

Non-uniform tunnel oxide thickness on rounded source-drain structures prevents corner breakdown, enabling reliable SONOS memory scaling.

Partial crystallization raises set-state resistance in a phase change memory cell, reducing programming current below 200 μA and leakage.

A transparent organic light emitting display integrates an electrochromic cavity to selectively modulate external light transmittance.

Segmented separation structures penetrate stacked gate electrodes, resolving defects from complex formation processes.

Carboxyl group reaction eliminates impurities from molten tin solder, suppressing Kirkendall voids and leakage failures in fine-pitch circuits.

A light-extraction structure in the substrate edge gap redirects trapped photons to match surrounding pixel luminance.

Shared fluorescent layers suppress color mixing and power consumption by eliminating color filters.