Semiconductor Device Silicon Hydronitride Diffusion Barrier

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Solution Overview

Problem

Conventional semiconductor devices face challenges in maintaining stable Si—H bonds in switching transistors and preventing oxygen deficiency in ferroelectric oxide films, leading to instability and increased leak current.

Innovation Solution

A semiconductor device with a silicon hydronitride layer between the active element and ferroelectric capacitive element, where the active element has a high hydrogen concentration and the ferroelectric capacitive element has a higher oxygen concentration, using a conductive oxide layer to prevent hydrogen diffusion and maintain stable Si—H bonds.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional semiconductor device structure is used without a silicon hydronitride layer, then the manufacturing process is simpler, but Si—H bonds become unstable and oxygen deficiency occurs in the ferroelectric oxide film

Engineering Contradiction:

Improvestability of Si—H bondsVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

A silicon hydronitride layer is introduced as an intermediary between the active element layer and the ferroelectric capacitive element layer. This layer acts as a diffusion barrier that prevents hydrogen from migrating from the active element to the ferroelectric oxide film, thereby stabilizing Si—H bonds in the active element while preventing oxygen deficiency in the ferroelectric film.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The device structure is segmented into distinct functional layers: an active element layer, a silicon hydronitride barrier layer, and a ferroelectric capacitive element layer. This segmentation allows each layer to perform its specific function independently, with the silicon hydronitride layer specifically tasked with preventing harmful diffusion between the other two layers.

Inventive Principle:

Principle #1Segmentation

2Reliability

If hydrogen concentration in the active element layer is increased to stabilize Si—H bonds, then bond stability improves, but hydrogen diffusion causes oxygen deficiency in the ferroelectric oxide film

Engineering Contradiction:

Improvestability of Si—H bondsVSAvoidoxygen deficiency in ferroelectric oxide film

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The silicon hydronitride layer serves as a protective intermediary that blocks hydrogen diffusion. By placing this barrier layer between the hydrogen-rich active element layer and the oxygen-sensitive ferroelectric oxide film, the system maintains high hydrogen concentration in the active element for Si—H bond stability while preventing hydrogen from reaching and causing oxygen deficiency in the ferroelectric film.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The silicon hydronitride layer, which contains hydrogen itself, is used to protect against hydrogen damage. By incorporating hydrogen into the barrier layer structure, the system converts the potentially harmful hydrogen into a protective function, where the silicon hydronitride layer absorbs or blocks hydrogen diffusion while maintaining structural integrity.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration stabilizes Si—H bonds, prevents oxygen deficiency, and reduces leak current, enabling cost-effective manufacturing of nonvolatile memory devices with improved performance.

Implementation Method 1

a silicon hydronitride layer formed between the active element layer and the ferroelectric capacitive element layer

Methodology Applied

Scientific EffectDiffusion barrier: Diffusion Barrier

Implementation Method 2

using a conductive oxide layer to prevent hydrogen diffusion and maintain stable Si—H bonds

Methodology Applied

Scientific EffectSelective permeability: Semipermeable Membrane

Data Source

PatentUS8723240B2Semiconductor device, manufacturing method for the same, and electronic device

Publication Date: 2014.05.13 HANNSTAR DISPLAY CORP

AI summary

A manufacturing method for a semiconductor device, the method including forming a thin film transistor by forming a polysilicon thin film on an insulating substrate, forming a gate electrode via a gate insulating film, and forming source/drain regions and a channel region by ion implantation in the polysilicon thin film by using the gate electrode as a mask, forming an interconnection layer on an interlayer dielectric film covering this thin film transistor and forming a first contact to be connected to the thin film transistor through the interlayer dielectric film, forming a silicon hydronitride film on the interlayer dielectric film so as to cover the interconnection layer, forming a lower electrode on this silicon hydronitride film and forming a second contact to be connected to the interconnection layer through the silicon hydronitride film, and forming a ferroelectric layer on the lower electrode.