3D Semiconductor Gate Electrodes With Segmented Separation Structures
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Solution Overview
Problem
The increasing complexity of gate formation in three-dimensional semiconductor devices leads to unanticipated defects due to the higher number of stacked gate electrodes, making the process more difficult and prone to errors.
Innovation Solution
The introduction of separation structures, including main and secondary separation structures, and gate electrodes arranged in a stepped manner, with secondary separation structures penetrating through the gate electrodes to improve the integration and reduce defects in the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the number of stacked gate electrodes is increased to achieve high integration, then device integration is improved, but process complexity and defect rate increase
Solution Approach 1:
The gate formation process is divided into multiple segments corresponding to different stacked gate electrodes. Each gate electrode is formed as a separate structure with its own isolation features, allowing independent processing and reducing the complexity of forming all gates simultaneously. The separation structures divide the continuous gate formation process into discrete, manageable stages.
Solution Approach 2:
Separation structures are introduced as intermediary elements between adjacent gate electrodes. These separation structures act as mediators that physically isolate different gate electrodes and their associated components, preventing process interference and defect propagation between adjacent gates during fabrication.
2Productivity
If the number of stacked gate electrodes is increased to achieve high integration, then device integration is improved, but manufacturing precision deteriorates
Solution Approach 1:
By segmenting the gate formation into separate stacked structures with isolation features, each gate electrode can be precisely formed and positioned independently. The separation structures create defined boundaries that ensure accurate alignment and spacing, maintaining manufacturing precision even as the number of gates increases.
Solution Approach 2:
The separation structures serve as precision reference features that define the exact positions and dimensions of adjacent gate electrodes. These intermediary structures provide stable geometric references that ensure consistent spacing and alignment, thereby maintaining manufacturing precision across multiple stacked gates.
3Manufacturing precision
If separation structures are introduced to improve gate formation, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The separation structures are merged with the gate electrode structures themselves, forming an integrated assembly where isolation features are combined with the functional gate elements. This merging approach reduces the need for separate, additional components while maintaining the precision benefits of separation.
Solution Approach 2:
The separation structures serve multiple functions simultaneously: they provide physical isolation between gates, define precise geometric references for alignment, and act as part of the overall gate structure. This multi-functionality reduces the need for additional dedicated components, thereby limiting the increase in overall device complexity.
Data Source
AI summary
A three-dimensional semiconductor device is provided including main separation structures disposed on a substrate, and extending in a first direction, parallel to a surface of the substrate; gate electrodes disposed between the main separation structures; a first secondary separation structure penetrating through the gate electrodes, between the main separation structures, and including a first linear portion and a second linear portion, having end portions opposing each other; and second secondary separation structures disposed between the first secondary separation structure and the main separation structures, and penetrating through the gate electrodes. The second secondary separation structures have end portions opposing each other between the second linear portion and the main separation structures.