Semiconductor Gate Structure with Tab Portions for Edge Consistency
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Solution Overview
Problem
Conventional photolithography processes in semiconductor manufacturing result in inconsistent gate edge sizes, leading to increased leakage current and reduced resistance to punch-through phenomena due to hot carrier electrons, as unit cell areas shrink and integration increases.
Innovation Solution
A semiconductor device with a gate structure featuring body portions, a head portion, and tab portions is manufactured, where the tab portions protrude from the sidewalls of the body portions to compensate for edge width reductions, and a gate insulation layer is formed between the active region and the gate, ensuring consistent edge sizes and improved integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional photolithography process is used to form very fine patterns, then integration degree increases, but gate edge size becomes inconsistent and smaller than theoretical values
Solution Approach 1:
The patent applies preliminary action by forming a mandrel structure with extended edges before the actual gate formation. The mandrel's extended edges preemptively compensate for the expected edge loss during photolithography and etching processes, ensuring that the final gate edges maintain the intended dimensions despite process variations.
Solution Approach 2:
The patent implements preliminary anti-action by designing the mandrel structure with edges that extend beyond the desired gate edges. This extended mandrel structure counteracts the harmful effect of edge size reduction during subsequent processing steps, thereby preventing the gate edges from becoming smaller than theoretical values.
2Length of moving object
If gate edge size is reduced due to photolithography limitations, then device miniaturization is achieved, but leakage current increases
Solution Approach 1:
The mandrel structure with extended edges is formed in advance to compensate for edge loss, ensuring that the final gate edges maintain adequate dimensions to prevent excessive leakage current while still achieving device miniaturization through overall structure optimization.
Solution Approach 2:
The patent changes the geometric parameters of the mandrel structure, specifically extending the edges beyond the desired gate edges. This parameter modification ensures that after etching and pattern transfer, the gate edges retain sufficient width to minimize leakage current while achieving the required device scaling.
3Area of moving object
If gate edge size is reduced, then unit cell area decreases, but resistance to punch-through phenomenon decreases
Solution Approach 1:
The extended mandrel edges are formed preliminarily to ensure adequate gate edge dimensions are maintained after processing. This preliminary compensation ensures that the gate edges retain sufficient width to provide adequate resistance to punch-through phenomena caused by hot carrier electrons, even as unit cell area is reduced.
Solution Approach 2:
The mandrel structure parameters are modified by extending the edges, which directly influences the final gate edge dimensions. This parameter change ensures that despite reduced unit cell area, the gate edges maintain adequate width to resist punch-through effects and ensure device reliability.
Data Source
AI summary
A semiconductor device includes an active region extending along a first direction on a semiconductor substrate, the active region having a first sidewall and a second sidewall spaced apart and facing each other, a distance between the first and second sidewalls extending along a second direction, and a gate on the active region, the gate having a pair of body portions extending along the second direction and being spaced apart from each other, the second direction being perpendicular to the first direction, a head portion extending along the first direction to connect the body portions, the head portion overlapping a portion of the first sidewall, and a plurality of tab portions protruding from sidewalls of the body portions, the tab portions extending along the first direction and overlapping a portion of the second sidewall.