Ether-Based Polymer Dielectrics for Low-Voltage OFET Gate Coupling
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Solution Overview
Problem
There is a need for dielectric materials suitable for field effect transistors that can operate with low voltages, as existing materials do not adequately support efficient low-voltage operation while maintaining low leakage currents and high gate coupling.
Innovation Solution
Polymers comprising specific arylene or aryl units with substituents, which form a dielectric layer in field effect transistors, offering high relative permittivity and compatibility with liquid processing techniques for flexible and lightweight electronic devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional dielectric materials are used, then the field effect transistor can be manufactured with standard processes, but the transistor cannot operate efficiently with low voltages due to insufficient gate coupling
Solution Approach 1:
The patent changes the dielectric material parameters by selecting polymers with specific chemical structures (formula 1) that have inherently higher relative permittivity values. This material parameter change enables sufficient gate coupling at lower operating voltages, directly resolving the contradiction between low voltage operation and adequate gate coupling.
Solution Approach 2:
The patent employs composite dielectric layers formed by combining the polymer of formula (1) with other materials or crosslinking agents. This composite approach allows optimization of both gate coupling properties and leakage current characteristics, enabling low-voltage operation while maintaining reliability.
2Reliability
If dielectric materials with high gate coupling are used, then low voltage operation is enabled, but leakage currents increase
Solution Approach 1:
The patent applies local quality by creating a dielectric layer with spatially varying properties through controlled crosslinking. The crosslinking density can be optimized locally to achieve high gate coupling in regions where it is needed while maintaining low leakage current properties in other regions, thus resolving the contradiction between these two opposing requirements.
Solution Approach 2:
The patent changes material parameters by selecting specific polymer structures with appropriate side chains and aromatic groups that provide high permittivity for gate coupling while incorporating features that suppress charge trapping and leakage current generation, thereby resolving the contradiction between gate coupling and leakage current.
3Adaptability or versatility
If organic dielectric materials compatible with liquid processing are used, then flexible and lightweight devices can be produced, but the gate coupling may be insufficient for low voltage operation
Solution Approach 1:
The patent changes the chemical structure parameters of organic polymers to achieve higher relative permittivity values while maintaining solubility in common organic solvents. The specific molecular structure (formula 1) with aromatic groups and side chains provides both processability and the necessary dielectric properties for low-voltage operation.
Solution Approach 2:
The patent creates composite organic dielectric systems that combine polymers with high permittivity features while maintaining compatibility with liquid processing techniques. The composite structure allows simultaneous achievement of flexibility, processability, and sufficient gate coupling for low voltage operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The polymers enable field effect transistors to operate efficiently with low voltages, maintaining low leakage currents and high gate coupling, thus suitable for portable devices powered by small batteries or near-field radio-frequency coupling.
Implementation Method 1
The polymers enable field effect transistors to operate efficiently with low voltages, maintaining low leakage currents and high gate coupling
Implementation Method 2
maintaining low leakage currents and high gate coupling
Data Source
AI summary
Polymers comprising at least one unit of formula (1) wherein n is 0 or 1, m and p are independently from each other 0, 1, 2, 3, 4, 5 or 6, provided that the sum of n, m and p is at least 2, and n and p are not 0 at the same time, Ar1 and Ar2 are independently from each other C6-14-arylene or C6-14-aryl, which may be substituted with 1 to 4 substituents independently selected from the group consisting of C1-30-alkyl, C2-30-alkenyl, C2-30-alkynyl, C5-8-cycloalkyl, C6-14-aryl and 5 to 14 membered heteroaryl, and X1, X2 and X3 are independently from each other and at each occurrence O or S, compositions comprising these polymers, and electronic devices comprising a layer formed from the compositions. Preferably, the electronic device is an organic field effect transistor and the layer is the dielectric layer.