3D IC Power Delivery Network With Vertical Through-Electrode Routing

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing three-dimensional integrated circuit structures face challenges in achieving improved electrical properties and reliability due to inefficient power and signal transfer, which limits their performance and efficiency.

Innovation Solution

A three-dimensional integrated circuit structure is designed with stacked dies and power delivery networks connected by through electrodes and vias, allowing for direct vertical power and signal transfer through optimized diameters and dielectric spacers, enhancing electrical connectivity and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If power and signal transfer paths are extended horizontally across substrate surfaces, then connectivity between components is achieved, but electrical resistance increases and power delivery efficiency decreases

Engineering Contradiction:
Improvepower delivery efficiencyVSAvoidtransfer path length
Core Design Contradiction:
Loss of energyVSLength of moving object

Solution Approach 1:

The patent transitions from horizontal power and signal transfer across substrate surfaces to vertical transfer through stacked three-dimensional integrated circuits. Through-electrodes penetrate substrates vertically, and stacked dies are interconnected via vertical bonding interfaces, fundamentally changing the transfer path from two-dimensional horizontal routing to three-dimensional vertical routing. This dimensional change shortens the effective transfer distance and reduces electrical resistance, directly improving power delivery efficiency.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If conventional two-dimensional packaging is used, then manufacturing simplicity is maintained, but electrical properties and reliability are limited

Engineering Contradiction:
Improveelectrical reliabilityVSAvoidthree-dimensional stacked structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The integrated circuit system is segmented into multiple independent but interconnected three-dimensional stacked dies, each potentially performing different functions. These stacked dies are bonded together through standardized bonding interfaces with through-electrodes, allowing modular assembly and testing. This segmentation enables improved electrical reliability through reduced interconnect length while managing complexity through modular design principles.

Inventive Principle:
Principle #1Segmentation

3Manufacturing precision

If through-electrodes with uniform diameter are used, then manufacturing is simpler, but electrical connectivity and signal integrity are suboptimal

Engineering Contradiction:
Improveelectrical connectivity precisionVSAvoidthrough-electrode fabrication
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The through-electrodes are designed with non-uniform diameters where the lower portion (within the first substrate) has a different diameter than the upper portion (extending into the second substrate). This local variation optimizes electrical connectivity by providing greater cross-sectional area where needed for current carrying capacity while maintaining appropriate dimensions for bonding interface alignment. The differentiated diameter structure addresses specific electrical requirements at different locations within the stacked assembly.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS12599040B2Three-dimensional integrated circuit structure and a method of fabricating the same
Publication Date: 2026.04.07 SAMSUNG ELECTRONICS CO LTD
  • US12599040B2 patent drawing
  • US12599040B2 patent drawing
  • US12599040B2 patent drawing

AI summary

A three-dimensional integrated circuit structure including: a first die including a first power delivery network, a first substrate, a first device layer, and a first metal layer; a second die on the first die, the second die including a second power delivery network, a second substrate, a second device layer, and a second metal layer; a first through electrode extending from the first power delivery network to a top surface of the first metal layer; and a first bump on the first through electrode, the second power delivery network including: lower lines to transfer power to the second device layer; and a pad connected to a lowermost one of the lower lines, the first bump is interposed between and connects the first through electrode and the pad, and the first power delivery network is connected to the second power delivery network through the first bump and the first through electrode.